CN113684532A - Molten silicon liquid level ranging assembly for crystalline silicon melting furnace and crystalline silicon melting furnace - Google Patents
Molten silicon liquid level ranging assembly for crystalline silicon melting furnace and crystalline silicon melting furnace Download PDFInfo
- Publication number
- CN113684532A CN113684532A CN202010384718.0A CN202010384718A CN113684532A CN 113684532 A CN113684532 A CN 113684532A CN 202010384718 A CN202010384718 A CN 202010384718A CN 113684532 A CN113684532 A CN 113684532A
- Authority
- CN
- China
- Prior art keywords
- melting furnace
- rod
- longitudinal rod
- molten silicon
- liquid level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 76
- 239000010703 silicon Substances 0.000 title claims abstract description 76
- 239000007788 liquid Substances 0.000 title claims abstract description 39
- 238000002844 melting Methods 0.000 title claims abstract description 39
- 230000008018 melting Effects 0.000 title claims abstract description 39
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 41
- 238000003723 Smelting Methods 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 4
- 239000007770 graphite material Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 3
- 238000005259 measurement Methods 0.000 abstract description 16
- 238000000034 method Methods 0.000 description 25
- 239000000155 melt Substances 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 210000003141 lower extremity Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Fluid Mechanics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a molten silicon liquid level ranging assembly for a crystal silicon melting furnace and the crystal silicon melting furnace, wherein the molten silicon liquid level ranging assembly for the crystal silicon melting furnace comprises: the hook part comprises a transverse rod inserted into the mounting hole of the guide cylinder and a longitudinal rod bent relative to the transverse rod, the longitudinal rod comprises a first end and a second end which are opposite, and the transverse rod is connected to the first end of the longitudinal rod; a contact portion including opposing third and fourth ends, the third end connected to the second end of the longitudinal rod, and the contact portion disposed coaxially with the longitudinal rod; wherein the cross-sectional shape of the transverse bar in a direction perpendicular to the axis of the transverse bar is polygonal. The molten silicon liquid level ranging assembly for the crystalline silicon smelting furnace and the crystalline silicon smelting furnace can improve the accuracy of Melt Gap measurement and control.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon growth, in particular to a molten silicon liquid level ranging assembly for a crystalline silicon melting furnace and the crystalline silicon melting furnace.
Background
Currently, Czochralski (Czochralski) is commonly used for producing monocrystalline silicon crystal rods, wherein a quartz crucible is used in a monocrystalline furnace for containing polycrystalline silicon raw materials, the polycrystalline silicon raw materials are melted by heating the crucible, a guide cylinder is arranged above the crucible in the monocrystalline furnace, and in the Czochralski monocrystalline silicon growth process, argon gas is usually continuously filled from the guide cylinder, flows through a gap between the liquid level of the molten silicon in the crucible and the guide cylinder, and is finally discharged from an exhaust port of a thermal field under the action of a vacuum pump.
With the continuous improvement of the quality requirement of silicon wafer materials, crystal defects in a crystal bar need to be well controlled in addition to controlling the resistivity and the oxygen content during the crystal pulling process, so that the crystal pulling process parameters need to be continuously optimized. The measurement of some crystal pulling process parameters is required to be more accurate, wherein an important parameter is Melt Gap, namely a Gap between the liquid level of the molten silicon and the guide cylinder, the measurement and control of the Melt Gap are important parameter indexes in a crystal pulling process, and the size of the Melt Gap has great influence on factors related to the growth and quality of the single crystal, such as the flowing of argon, the evaporation of impurities, the rotation stability of a silicon rod, the oxygen content of the silicon rod and the like. The Melt Gap is the distance from the bottom of the guide shell to the liquid level of the molten silicon in the crucible, the Melt Gap is measured after the melting is finished, and the Melt Gap is adjusted to a set value by adjusting the position of the liquid level. In the subsequent crystal bar pulling process, the solution is continuously reduced in the pulling process, the liquid level is continuously reduced, and meanwhile, the crucible is continuously raised, so that the Melt Gap is required to be monitored in real time and accurately adjusted.
In general, the measurement and monitoring method is to insert a quartz lifting hook at the bottom of the guide shell, and the measurement is carried out by the reflection imaging principle of the quartz lifting hook on the liquid level of the molten silicon. In the actual measurement process, the cross section of the quartz lifting hook is circular, so that the quartz lifting hook cannot rotate when being inserted into the mounting hole of the guide cylinder, and the quartz lifting hook is difficult to be in a vertical state, so that the measurement accuracy is influenced.
Disclosure of Invention
The invention aims to provide a molten silicon liquid level distance measuring assembly for a crystal silicon melting furnace and the crystal silicon melting furnace, which can improve the accuracy of Melt Gap measurement and control.
The technical scheme provided by the invention is as follows:
a molten silicon liquid level ranging assembly for a crystal silicon melting furnace is arranged on a guide cylinder of the crystal silicon melting furnace and used for measuring the distance between the guide cylinder and the molten silicon liquid level; the molten silicon liquid level ranging assembly for the crystalline silicon smelting furnace comprises:
the hook part comprises a transverse rod inserted into the mounting hole of the guide cylinder and a longitudinal rod bent relative to the transverse rod, the longitudinal rod comprises a first end and a second end which are opposite, and the transverse rod is connected to the first end of the longitudinal rod;
a contact portion including opposing third and fourth ends, the third end connected to the second end of the longitudinal rod, and the contact portion disposed coaxially with the longitudinal rod;
wherein the cross-sectional shape of the transverse bar in a direction perpendicular to the axis of the transverse bar is polygonal.
Illustratively, the cross-sectional shape of the transverse bar in a direction perpendicular to the axis of the transverse bar is quadrilateral.
Illustratively, at least one diagonal of the polygon is parallel to the axis of the longitudinal rod.
Illustratively, the cross-sectional shape of the longitudinal rod in a direction perpendicular to the axis of the longitudinal rod is polygonal.
Illustratively, the outer peripheral surface of the longitudinal bar includes a plurality of side surfaces, each of the side surfaces corresponding to a side of the polygon, wherein the transverse bar is connected to a first side surface of the plurality of side surfaces, and the first side surface is perpendicular to the axis of the transverse bar.
Illustratively, the hook part is made of graphite material, and the contact part is of a quartz rod structure made of quartz material.
Illustratively, the outer diameter of the longitudinal rod is greater than or equal to the outer diameter of the contact portion.
Illustratively, the third end of the contact portion is removably coupled to the second end of the longitudinal rod.
Illustratively, the third end of the contact portion is threadedly coupled to the second end of the longitudinal rod.
A crystal silicon melting furnace comprises a guide cylinder, wherein the guide cylinder comprises a top opening and a bottom opening; the molten silicon liquid level ranging assembly for the crystalline silicon smelting furnace is detachably mounted at the bottom of the guide shell, wherein a mounting hole is formed in the opening of the bottom of the guide shell, the transverse rod is inserted into the mounting hole, the cross section of the transverse rod in the direction perpendicular to the axis of the transverse rod is polygonal, and the mounting hole is a polygonal hole which is the same as the cross section of the transverse rod in shape.
The beneficial effects brought by the invention are as follows:
in the above scheme, the molten silicon liquid level ranging assembly for the crystal silicon smelting furnace is used for measuring Melt Gap in the crystal pulling process, namely, a Gap between the molten silicon liquid level and the guide cylinder, and comprises a combined lifting hook, wherein the combined lifting hook comprises a hook part and a contact part, the hook part is used for being fixed with the guide cylinder, a transverse rod of the hook part is inserted into a mounting hole of the guide cylinder, the longitudinal rod and the contact part are vertically downward under the action of gravity, and the contact part extends out of a bottom opening of the guide cylinder. The cross section of the transverse rod of the hook part is polygonal, and the mounting hole in the guide cylinder is a polygonal hole which is the same as the cross section of the transverse rod, so that the hook part can be prevented from rotating in the mounting hole of the guide cylinder in the Melt Gap measuring process, the coaxially arranged longitudinal rod and the coaxially arranged contact part are always in a vertical state, the influence of objective factors on measurement is reduced, and the accuracy of measured data is high in the process of monitoring the Melt Gap in real time.
Drawings
FIG. 1 is a schematic structural diagram of a crystalline silicon furnace according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a molten silicon level ranging assembly for a crystal silicon melting furnace according to an embodiment of the invention;
FIG. 3 is a schematic exploded view of a molten silicon level measuring unit for a crystal silicon melting furnace according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a," "an," or "the" and similar referents do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
Before the present invention provides a molten silicon level measuring module for a crystal silicon melting furnace, the following description of the related art is necessary:
in the related art, when a Czochralski (Czochralski) method is used to produce a silicon single crystal ingot, a quartz crucible is used to hold a polysilicon raw material in a single crystal furnace, the polysilicon raw material is melted by heating the crucible, a guide cylinder is provided above the crucible in the single crystal furnace, and in the Czochralski method, in the growth process of the silicon single crystal, argon gas is usually continuously filled from the guide cylinder, and the argon gas is allowed to flow through a gap between the liquid level of the silicon melt in the crucible and the guide cylinder, and is finally discharged from an exhaust port of a thermal field under the action of a vacuum pump. Melt Gap, namely the Gap between the liquid level of the molten silicon and the guide cylinder, and the measurement and control of Melt Gap is an important parameter index in the crystal pulling process, and the Melt Gap is required to be monitored in real time and accurately adjusted. In general, Melt Gap measurement and monitoring method is that a quartz hook is inserted into the lower part of a guide cylinder, and measurement is carried out by the reflection imaging principle of the quartz hook on the surface of molten silicon. Wherein, a lateral wall position for carrying out fused silicon liquid level measuring quartz lifting hook installs at interior draft tube, quartz hook is the L type, including horizontal pole and longitudinal rod, there is the mounting hole on the draft tube inner wall, transversely put this quartz lifting hook's horizontal pole in the mounting hole, then put one's hand, under the action of gravity, its longitudinal rod can vertical part can be downward, through the lift graphite crucible, can make fused silicon liquid level and vertical partial longitudinal rod lower limb just contact, need the accurate fused silicon liquid level position of measurement at the crystal pulling in-process, guarantee that the draft tube keeps the setting value with the distance of liquid level, Melt Gap measurement process utilizes the reflection formation of image of lifting hook in solution to go on. The cross section of the lifting hook adopted at present is circular, so that in the Melt Gap measuring process, the transverse rod of the lifting hook can easily rotate in the mounting hole, and the vertical rod is difficult to be ensured to be in a vertical state, so that the measuring accuracy is influenced.
In view of the above technical problems, embodiments of the present invention provide a molten silicon liquid level ranging assembly for a crystal silicon melting furnace and a crystal silicon melting furnace, which can improve accuracy of Melt Gap measurement and control.
As shown in fig. 1 to 3, the molten silicon liquid level ranging assembly for a crystal silicon melting furnace according to an embodiment of the present invention is mounted on a draft tube 10 of the crystal silicon melting furnace, and is configured to measure a distance between the draft tube 10 and a molten silicon liquid level 20; the molten silicon liquid level ranging assembly for the crystalline silicon smelting furnace comprises:
the hanging hook part 100 comprises a transverse rod 110 and a longitudinal rod 120, wherein the transverse rod 110 is used for being inserted into the mounting hole of the guide cylinder 10, the longitudinal rod 120 is bent relative to the transverse rod 110, the longitudinal rod 120 comprises a first end and a second end which are opposite, and the transverse rod 110 is connected to the first end of the longitudinal rod 120;
a contact portion 200, said contact portion 200 comprising opposing third and fourth ends, said third end being connected to said second end of said longitudinal rod 120, and said contact portion 200 being disposed coaxially with said longitudinal rod 120;
wherein, the cross-sectional shape of the transverse bar 110 in the direction perpendicular to the axis of the transverse bar 110 is a polygon.
In the above scheme, the molten silicon liquid level ranging assembly for the crystal silicon melting furnace is used for measuring Melt Gap in the crystal pulling process, that is, a Gap between the molten silicon liquid level 20 in the crucible 30 and the guide cylinder 10, and comprises a combined hook, wherein the combined hook comprises a hook part 100 and a contact part 200, the hook part 100 is used for being fixed with the guide cylinder 10, wherein the transverse rod 110 of the hook part 100 is inserted into the mounting hole of the guide cylinder 10, the longitudinal rod 120 and the contact part 200 are vertically downward under the action of gravity, and the contact part 200 extends out of the bottom opening of the guide cylinder 10. Because the cross section of the transverse rod 110 of the hook part 100 is polygonal, and the mounting hole on the guide cylinder 10 is a polygonal hole with the same cross section as the transverse rod 110, in the Melt Gap measuring process, the hook part 100 can be prevented from rotating in the mounting hole of the guide cylinder 10, and meanwhile, the coaxially arranged longitudinal rod 120 and the contact part 200 are always in a vertical state, the influence of objective factors on measurement is reduced, and the accuracy of measured data is high when the Melt Gap is monitored in real time.
In an exemplary embodiment, as shown in fig. 2 to 3, the cross-sectional shape of the transverse bar 110 in a direction perpendicular to the axis of the transverse bar 110 is a quadrangle.
With the above scheme, the cross section of the transverse rod 110 is a quadrangle, and in other embodiments, the cross section of the transverse rod 110 may also be another polygon, for example, a triangle or a pentagon.
Further, in an exemplary embodiment, at least one diagonal of the polygon is parallel to the axis of the longitudinal rod 120.
By adopting the above scheme, at least one diagonal line in the transverse rod 110 is parallel to the axis of the longitudinal rod 120, so that when the transverse rod 110 of the combined hook is inserted into the mounting hole of the draft tube 10, the longitudinal rod 120 and the contact part 200 are in a vertical state under the action of gravity, and as one diagonal line of the cross section of the transverse rod 110 is parallel to the longitudinal rod 120, that is, one diagonal line of the cross section of the transverse rod 110 is in a vertical state, the transverse rod 110 of the hook part 100 of the combined hook can be further ensured to be inserted into the bottom of the draft tube 10, and the longitudinal rod 120 and the contact part 200 are ensured to be always kept in a vertical position and are not easy to rotate.
Further, in an exemplary embodiment, the cross-sectional shape of the longitudinal bar 120 in a direction perpendicular to the axis of the longitudinal bar 120 is a polygon, and the outer circumferential surface of the longitudinal bar 120 includes a plurality of side surfaces, each of which corresponds to a side of the polygon, wherein the transverse bar 110 is connected to a first side surface of the plurality of side surfaces, and the first side surface is perpendicular to the axis of the transverse bar 110.
By adopting the above scheme, the cross sections of the transverse rod 110 and the longitudinal rod 120 are both polygonal, the manufacturing process of the hook part 100 is relatively simple, and on the other hand, the first side surface of the longitudinal rod 120 is perpendicular to the axis of the transverse rod 110, so that after the transverse rod 110 is transversely inserted into the mounting hole of the draft tube 10, the first side surface of the longitudinal rod 120 can be kept perpendicular to the horizontal plane.
It is understood that, in practical applications, the longitudinal rod 120 may be a rod-shaped structure with other shapes, which is not limited to this.
Further, in an exemplary embodiment, the hook portion 100 is made of a graphite material, and the contact portion 200 is a quartz rod structure made of a quartz material.
By adopting the scheme, in the Melt Gap measuring process, the inverted image imaging of the lifting hook in the solution is utilized, the imaging of the lifting hook made of quartz in the solution is very fuzzy, and the measuring precision is greatly influenced, so that in the exemplary embodiment provided by the invention, the hook part 100 is made of graphite, and the contact part 200 is made of quartz in order to avoid polluting the Melt in the crucible, so that in the Melt Gap measuring process, the upper hook part 100 is made of graphite, a clear inverted image can be formed on the Melt surface, and the position of the molten silicon liquid level 20 can be accurately measured.
Further, in an exemplary embodiment, the outer diameter of the longitudinal rod 120 is greater than or equal to the outer diameter of the contact portion 200. In this way, it is further ensured that the longitudinal rod 120 forms a clear reflection on the melt surface.
Illustratively, the ratio of the outer diameter of the longitudinal rod 120 to the outer diameter of the contact portion 200 is 2: 1. of course, the above is only an example, and in practical applications, the ratio of the outer diameters of the longitudinal rod 120 and the contact portion 200 is not limited thereto.
In addition, in the related art, the quartz hook is of an integral structure and is poor in universality. In an exemplary embodiment, the third end of the contact portion 200 is detachably connected to the second end of the longitudinal rod 120. By adopting the scheme, the contact part 200 at the lower part of the combined lifting hook is detachably connected with the hook part 100 at the upper part, and can be matched with contact parts 200 with different length series, thereby meeting the requirements of different crystal pulling processes.
Further, illustratively, as shown in fig. 3, the third end of the contact portion 200 is threadedly coupled to the second end of the longitudinal rod 120. In practical applications, the detachable connection manner of the contact portion 200 and the longitudinal rod 120 is not limited to this, and may be, for example, a snap connection or an interference fit connection.
In addition, as shown in fig. 1, an embodiment of the present invention further provides a crystal silicon melting furnace, including a guide shell 10, where the guide shell 10 includes a top opening and a bottom opening; the molten silicon liquid level ranging assembly for the crystal silicon melting furnace provided by the embodiment of the invention is detachably mounted at the bottom of the guide shell 10, wherein a mounting hole is formed at the bottom opening of the guide shell 10, the transverse rod 110 is inserted into the mounting hole, the cross section of the transverse rod 110 in the direction perpendicular to the axis of the transverse rod 110 is polygonal, and the mounting hole is a polygonal hole with the same shape as the cross section of the transverse rod 110.
Obviously, the crystalline silicon melting furnace provided by the embodiment of the invention also has the technical effects brought by the molten silicon liquid level ranging assembly for the crystalline silicon melting furnace provided by the embodiment of the invention, and details are not described herein.
The following points need to be explained:
(1) the drawings of the embodiments of the disclosure only relate to the structures related to the embodiments of the disclosure, and other structures can refer to the common design.
(2) For purposes of clarity, the thickness of layers or regions in the figures used to describe embodiments of the present disclosure are exaggerated or reduced, i.e., the figures are not drawn on a true scale. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
(3) Without conflict, embodiments of the present disclosure and features of the embodiments may be combined with each other to arrive at new embodiments.
The above is only a specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and the scope of the present disclosure should be determined by the scope of the claims.
Claims (10)
1. A molten silicon liquid level ranging assembly for a crystal silicon melting furnace is arranged on a guide cylinder of the crystal silicon melting furnace and used for measuring the distance between the guide cylinder and the molten silicon liquid level; characterized in that, the molten silicon liquid level range finding subassembly for crystal silicon smelting pot includes:
the hook part comprises a transverse rod inserted into the mounting hole of the guide cylinder and a longitudinal rod bent relative to the transverse rod, the longitudinal rod comprises a first end and a second end which are opposite, and the transverse rod is connected to the first end of the longitudinal rod;
a contact portion including opposing third and fourth ends, the third end connected to the second end of the longitudinal rod, and the contact portion disposed coaxially with the longitudinal rod;
wherein the cross-sectional shape of the transverse bar in a direction perpendicular to the axis of the transverse bar is polygonal.
2. The molten silicon level gauge assembly for a crystalline silicon melting furnace according to claim 1,
the cross section of the transverse rod in the direction perpendicular to the axis of the transverse rod is quadrilateral.
3. The molten silicon level gauge assembly for a crystalline silicon melting furnace according to claim 1,
at least one diagonal of the polygon is parallel to the axis of the longitudinal rod.
4. The molten silicon level gauge assembly for a crystalline silicon melting furnace according to claim 1,
the cross-sectional shape of the longitudinal rod in a direction perpendicular to the axis of the longitudinal rod is polygonal.
5. The molten silicon level gauge assembly for a crystalline silicon melting furnace according to claim 1,
the peripheral surface of the longitudinal rod comprises a plurality of side surfaces, each side surface corresponds to one side of the polygon, the transverse rod is connected to a first side surface of the side surfaces, and the first side surface is perpendicular to the axis of the transverse rod.
6. The molten silicon level gauge assembly for a crystalline silicon melting furnace according to claim 1,
the hook part is made of graphite materials, and the contact part is of a quartz rod structure made of quartz materials.
7. The molten silicon level gauge assembly for a crystalline silicon melting furnace according to claim 6,
the outer diameter of the longitudinal rod is greater than or equal to the outer diameter of the contact portion.
8. The molten silicon level gauge assembly for a crystalline silicon melting furnace according to any one of claims 1 to 7, wherein the third end of the contact portion is detachably connected to the second end of the longitudinal rod.
9. The molten silicon level gauge assembly for a crystalline silicon melting furnace of claim 8, wherein the third end of the contact portion is threadedly connected to the second end of the longitudinal rod.
10. A crystal silicon melting furnace comprises a guide cylinder, wherein the guide cylinder comprises a top opening and a bottom opening; the molten silicon liquid level ranging assembly for the crystalline silicon melting furnace is characterized in that the bottom position of the guide shell is detachably provided with the molten silicon liquid level ranging assembly as defined in any one of claims 1 to 9, wherein an opening position at the bottom of the guide shell is provided with an installation hole, the transverse rod is inserted into the installation hole, the cross section of the transverse rod in the direction perpendicular to the axis of the transverse rod is polygonal, and the installation hole is a polygonal hole with the same shape as the cross section of the transverse rod.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010384718.0A CN113684532A (en) | 2020-05-08 | 2020-05-08 | Molten silicon liquid level ranging assembly for crystalline silicon melting furnace and crystalline silicon melting furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010384718.0A CN113684532A (en) | 2020-05-08 | 2020-05-08 | Molten silicon liquid level ranging assembly for crystalline silicon melting furnace and crystalline silicon melting furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113684532A true CN113684532A (en) | 2021-11-23 |
Family
ID=78575255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010384718.0A Pending CN113684532A (en) | 2020-05-08 | 2020-05-08 | Molten silicon liquid level ranging assembly for crystalline silicon melting furnace and crystalline silicon melting furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113684532A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07330484A (en) * | 1994-06-03 | 1995-12-19 | Nippon Steel Corp | Pulling up device and production of silicon single crystal |
| JP2006256898A (en) * | 2005-03-16 | 2006-09-28 | Sumco Corp | Silicon single crystal pulling apparatus |
| CN102251275A (en) * | 2011-07-07 | 2011-11-23 | 杭州慧翔电液技术开发有限公司 | Single-crystal furnace thermal field device capable of measuring distance between fused silicon liquid surface and guide cylinder |
| CN202898594U (en) * | 2012-11-09 | 2013-04-24 | 英利能源（中国）有限公司 | Molten silicon liquid surface ranging component for crystalline silicon melting furnace and crystalline silicon melting furnace |
| CN216473570U (en) * | 2021-01-26 | 2022-05-10 | 西安奕斯伟硅片技术有限公司 | Positioning pin for measuring liquid level position of molten silicon and crystal silicon smelting furnace |
-
2020
- 2020-05-08 CN CN202010384718.0A patent/CN113684532A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07330484A (en) * | 1994-06-03 | 1995-12-19 | Nippon Steel Corp | Pulling up device and production of silicon single crystal |
| JP2006256898A (en) * | 2005-03-16 | 2006-09-28 | Sumco Corp | Silicon single crystal pulling apparatus |
| CN102251275A (en) * | 2011-07-07 | 2011-11-23 | 杭州慧翔电液技术开发有限公司 | Single-crystal furnace thermal field device capable of measuring distance between fused silicon liquid surface and guide cylinder |
| CN202898594U (en) * | 2012-11-09 | 2013-04-24 | 英利能源（中国）有限公司 | Molten silicon liquid surface ranging component for crystalline silicon melting furnace and crystalline silicon melting furnace |
| CN216473570U (en) * | 2021-01-26 | 2022-05-10 | 西安奕斯伟硅片技术有限公司 | Positioning pin for measuring liquid level position of molten silicon and crystal silicon smelting furnace |
Non-Patent Citations (1)
| Title |
|---|
| 刘春晖: "汽车维修工具与设备使用指南", vol. 1, 30 September 2019, 机械工业出版社, pages: 20 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104499045B (en) | Kyropoulos-method sapphire crystal growth furnace | |
| KR101579780B1 (en) | Method of determining diameter of single crystal, process for producing single crystal using same, and device for producing single crystal | |
| KR101901308B1 (en) | Method for calculating height position of silicon melt surface, method for drawing up monocrystalline silicon and device for drawing up monocrystalline silicon | |
| US9260796B2 (en) | Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof | |
| US7868708B2 (en) | Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal | |
| JP5577873B2 (en) | Method for measuring distance between bottom surface of heat shield member and raw material melt surface, control method for distance between bottom surface of heat shield member and raw material melt surface, method for producing silicon single crystal | |
| TWI592524B (en) | Manufacturing method and system of silicon single crystal | |
| KR100881172B1 (en) | Magnetic field application method of pulling silicon single crystal | |
| US20100089308A1 (en) | Silica glass crucible and method for pulling single-crystal silicon | |
| CN102758247A (en) | Silica glass crucible and method of pulling silicon single crystal with silica glass crucible | |
| CN112813492A (en) | Liquid level detection device for crystal growth and crystal growth device | |
| TWI749487B (en) | A method and a device for controlling safe lifting of silicon melt crucible | |
| CN216473570U (en) | Positioning pin for measuring liquid level position of molten silicon and crystal silicon smelting furnace | |
| TWI432385B (en) | Method of manufacturing vitreous silica crucible | |
| CN113684532A (en) | Molten silicon liquid level ranging assembly for crystalline silicon melting furnace and crystalline silicon melting furnace | |
| JP2019214486A (en) | Method of measuring interval between melt level and seed crystal, method of preheating seed crystal, and method of manufacturing single crystal | |
| TWI385132B (en) | Silica glass crucible and method for manufacturing the same | |
| TWI812512B (en) | Single crystal silicon crystal pulling control method and device, single crystal silicon crystal pulling furnace | |
| JP4930488B2 (en) | Single crystal diameter detection method, single crystal manufacturing method using the same, and single crystal manufacturing apparatus | |
| CN102531346B (en) | Method of manufacturing vitreous silica crucible | |
| JP3109950B2 (en) | Method for growing semiconductor single crystal | |
| CN218756152U (en) | Liquid gap positioning device of single crystal furnace | |
| CN110685008A (en) | Control device and method for stabilizing crystal growth interface of Czochralski method | |
| CN215481422U (en) | Molten liquid interval control structure and single crystal rod growth device | |
| CN105887187B (en) | Method for stably controlling concentration of dopant for silicon single crystal growth |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |