CN202255536U - Solid liquid interface measuring device for crystalline silicon ingot furnace - Google Patents
Solid liquid interface measuring device for crystalline silicon ingot furnace Download PDFInfo
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- CN202255536U CN202255536U CN2011203572108U CN201120357210U CN202255536U CN 202255536 U CN202255536 U CN 202255536U CN 2011203572108 U CN2011203572108 U CN 2011203572108U CN 201120357210 U CN201120357210 U CN 201120357210U CN 202255536 U CN202255536 U CN 202255536U
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- silicon ingot
- liquid interface
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- ingot furnace
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Abstract
The utility model provides a solid liquid interface measuring device for a crystalline silicon ingot furnace, which comprises a motor, a driver, a motion controller and a quartz bar. The quartz bar is located at the upper portion of the crystalline silicon ingot furnace and capable of moving up and down along the vertical direction. A pressure sensor is disposed on the quartz bar and connected with the motion controller through a signal wire. The motion controller is connected with the driver in two-way mode through a control bus, the driver is connected with the motor so as to provide drive signals for the motor, and the motor is connected with the quartz bar through a transmission mechanism so as to control displacement of the quartz bar. Therefore, by enabling the pressure sensor to track different pressures of the quartz bar in contacting with melt and solid, solid liquid interface tracking can be achieved, and position and change trend of solid liquid interface can be accurately judged.
Description
Technical field
The utility model relates to crystal silicon ingot casting technology field, relates in particular to a kind of crystal silicon ingot furnace and uses the solid-liquid interface measurement mechanism.
Background technology
Solar energy power generating utilizes one of form as the most potential renewable resource, has development at full speed in recent years.Mainly by the crystalline material preparation, this crystalline material comprises monocrystalline silicon and polysilicon to commercial at present solar cell, and monocrystalline silicon is through the vertical pulling method preparation, and polysilicon mainly is to prepare through directional solidification casting method.
Monocrystalline silicon and polysilicon respectively have relative merits.Wherein monocrystalline silicon is because of only comprising a crystal grain, has the absorption that inverted pyramid shape matte that characteristics, particularly monocrystalline silicon piece such as defective is few, conversion efficiency height form through alkali making herbs into wool has been strengthened light by the battery of its preparation, improved conversion efficiency.But monocrystalline silicon is had relatively high expectations to raw material and operation, and inventory is few, relative polysilicon, and cost is higher; Especially at present main flow mix B (boron) monocrystalline silicon because the introducing of O (oxygen) in the monocrystalline crucible makes that the optical attenuation of mixing the B monocrystaline silicon solar cell is bigger.The casting inventory of polysilicon is big, simple to operate, and because of it adopts directional solidification, has the effect of metallurgy purification, and is lower to ingredient requirement, and the relative monocrystalline silicon of manufacturing cost reduces greatly; But defectives such as its a large amount of crystal boundary and dislocation cause the conversion efficiency of polysilicon solar cell to compare the conversion efficiency low 1 ~ 1.5% of monocrystaline silicon solar cell.
At present, type monocrystalline silicon ingot casting technology is as a kind of new technology, and the advantage of monocrystalline silicon and polysilicon is combined, and becomes the development trend of crystal silicon solar energy battery.Adopt a type monocrystalline silicon foundry engieering, can produce the solar cell that cost is low, conversion efficiency is high.Existing type of monocrystalline silicon ingot casting technology, most of monocrystalline silico briquette that uses is placed on crucible bottom as seed crystal; Carry out heat fused according to the mode of polycrystalline silicon ingot casting then, and guarantee that seed crystal can not be completely melted; After confirming that seed crystal reaches desired height, get into the long brilliant stage, through regulating the elevation rate of temperature and insulation system, set up suitable thermograde, and keep the solid-liquid interface dimpling, guarantee that molten silicon begins to grow up on not molten seed crystal.Yet the solid-liquid interface during how to ingot casting is followed the trail of judgement, can not be completely melted to guarantee melting stage monocrystalline silico briquette, makes melt continuing to grow up on the monocrystalline silico briquette of fusing fully, is the difficult point of this kind monocrystalline silicon ingot casting technology.If adopt manpower to measure, then whenever just need after a while to measure once, waste of manpower, and measure not accurate enough.
Therefore, be necessary to provide a kind of crystal silicon ingot furnace with the solid-liquid interface measurement mechanism to overcome the problems referred to above or difficult point.
The utility model content
For the problems referred to above or the difficult point that solves prior art, the purpose of the utility model provides a kind of crystal silicon ingot furnace and uses the solid-liquid interface measurement mechanism, and it can accurately judge the position and the variation tendency of solid-liquid interface.
To achieve these goals; The utility model provides a kind of crystal silicon ingot furnace to use the solid-liquid interface measurement mechanism; Comprise motor, driver, motion controller and quartz pushrod, quartz pushrod is positioned at the top of crystal silicon ingot furnace and can vertically moves up and down, and said quartz pushrod is provided with a pressure transducer; This pressure transducer is connected with motion controller through signal wire; Motion controller is connected with driver is two-way through control bus, and driver links to each other with motor and thinks that motor provides drive signal, and motor links to each other with quartz pushrod with the displacement of control quartz pushrod through a gear train.
As the further improvement of the utility model, this crystal silicon ingot furnace also comprises support with the solid-liquid interface measurement mechanism, and quartz pushrod is installed in the crystal silicon ingot furnace through this support.
As the further improvement of the utility model, motor, driver and motion controller all are positioned at cantilever tip.
As the further improvement of the utility model, this crystal silicon ingot furnace also comprises the power supply that is positioned at the support bottom with the solid-liquid interface measurement mechanism and is positioned at the travel switch of support upside, motion controller below.
As the further improvement of the utility model, said pressure transducer is connected with gear train.
As the further improvement of the utility model, this crystal silicon ingot furnace also comprises the display screen that is positioned on the driver and shows the quartz pushrod displacement data with the solid-liquid interface measurement mechanism.
Compared with prior art; The advantage of the utility model is: follow the trail of quartz pushrod lower end suffered different pressures signal when touching melt and solid through pressure transducer; The tracking of solid-liquid interface when realizing to the crystal silicon ingot casting, the error that so can reduce manpower and produce when artificially measuring is accurately judged the position and the variation tendency of solid-liquid interface; The judgement of seed crystal fusing provides foundation accurately in the crystal silicon ingot furnace time, and then suitability for industrialized production that can type of realization monocrystalline ingot casting.
Description of drawings
Fig. 1 is the structural representation of the utility model crystal silicon ingot furnace with an embodiment of solid-liquid interface measurement mechanism.
Embodiment
Below will combine each embodiment shown in the drawings that the utility model is described in detail.But these embodiments do not limit the utility model, and the conversion on the structure that those of ordinary skill in the art makes according to these embodiments, method or the function all is included in the protection domain of the utility model.
See also shown in Figure 1ly, it is that one type of crystal silicon ingot furnace is followed the trail of measurement mechanism automatically with solid-liquid interface that the utility model crystal silicon ingot furnace uses in solid-liquid interface measurement mechanism 100 1 embodiments.In this embodiment, this crystal silicon ingot furnace comprises power supply 1, support 2, motor 3, driver 4, motion controller (not label), display screen 5, pressure transducer 6, quartz pushrod 7, travel switch 8 and gear train 9 with solid-liquid interface measurement mechanism 100.
Wherein motor 3, driver 4, motion controller and display screen 5 all are arranged at support 2 upper ends.Said display screen 5 is positioned at the outside of driver 4 to show the displacement data of quartz pushrod 7.Motion controller is through control bus and 4 two-way connections of driver.Driver 4 is connected with motor 3 and for motor 3 drive signal is provided.Said quartz pushrod 7 is installed in the top of a crystal silicon ingot furnace (not shown) through support 2, and insert in the quartz pushrod jack (not shown) of this crystal silicon ingot furnace top its lower end, and can vertically move up and down.Pressure transducer 6 is arranged on the quartz pushrod 7 and with gear train 9 and links to each other.Different because of the pressure of melt in the crystal silicon ingot furnace and solid, this pressure transducer 6 can be sensed quartz pushrod 7 lower ends suffered pressure signal when touching solid.Said pressure transducer 6 is connected with motion controller through signal wire.Said gear train 9 is connected between pressure transducer 6 and the motor 3.Said motor 3 has rotary output axis (not shown), and this rotary output axis links to each other with quartz pushrod 7 through gear train 9.Motor 3 can clockwise or rotate counterclockwise moving up and down with control quartz pushrod 7.Said travel switch 8 is positioned at the below of support 2 upsides, motion controller.
Quartz pushrod 7 in the utility model is the high-purity quartz rod; Its composition is a silicon dioxide; Long contact time melt meeting and dissolve pasc reaction and then contaminated melt; Thereby the utility model crystal silicon ingot furnace is set to select certain time interval to measure once with solid-liquid interface measurement mechanism 100, and the displacement difference of twice measurement promptly is the distance that solid-liquid interface moves in this time interval.In addition; The utility model adopts high-purity quartz rod 7, and its softening point is greater than the fusing point of silicon, when the crystal silicon ingot furnace carries out fusing of silicon material or long crystalline substance; There is certain thermograde at vertical direction; Therefore solid-liquid interface has tangible separatrix at vertical direction, and when quartz pushrod 7 lower ends touched solid state si or silica crucible (not shown) bottom, pressure transducer 6 can receive bigger pressure signal.
The utility model crystal silicon ingot furnace with solid-liquid interface measurement mechanism 100 when the measurement of type of carrying out crystal silicon ingot casting solid-liquid interface, at first, power-on 1, starter motor 3 makes quartz pushrod 7 insert in the silicon melt at the uniform velocity straight down; When quartz pushrod 7 lower ends touch silicon solid or silica crucible bottom; The pressure transducer 6 that is installed in quartz pushrod 7 upper ends sends signal; And transmit signal through signal wire and give motion controller, motion controller transmits signal and gives driver 4, so that motor 3 stops operating; Then, the displacement information data of record quartz pushrod 7, motor 3 is auto-reverse, and quartz pushrod 7 is upwards lifted out melt fast, and stops at travel switch 8 places, can accomplish once solid-liquid interface tracking measurement automatically thus.
By above visible; Different pressures signal when the utility model crystal silicon ingot furnace is followed the trail of quartz pushrod 7 contact melts and solid with solid-liquid interface measurement mechanism 100 through pressure transducer 6; The tracking of solid-liquid interface when realizing to class crystal silicon ingot casting, the error that can reduce manpower and produce when artificially testing is accurately judged the position and the variation tendency of solid-liquid interface; For the judgement of crystal silicon ingot casting seed crystal fusing provides foundation accurately, and then suitability for industrialized production that can type of realization monocrystalline ingot casting.
In addition, the utility model crystal silicon ingot furnace is 100 simple in structure with the solid-liquid interface measurement mechanism, easy operating, good test effect, cost are low, and can reduce the generation of the abnormal occurrencies such as quartz pushrod 7 fractures that human error causes.
To those skilled in the art, obviously the utility model is not limited to the details of above-mentioned example embodiment, and under the situation of spirit that does not deviate from the utility model or essential characteristic, can realize the utility model with other concrete form.Therefore; No matter from which point; All should regard embodiment as exemplary; And be nonrestrictive, the scope of the utility model is limited accompanying claims rather than above-mentioned explanation, therefore is intended to the implication of the equivalents that drops on claim and all changes in the scope are included in the utility model.Should any Reference numeral in the claim be regarded as limit related claim.
In addition; Describing according to embodiment though should be appreciated that this instructions, is not that each embodiment only comprises an independently technical scheme; This narrating mode of instructions only is for clarity sake; Those skilled in the art should make instructions as a whole, and the technical scheme among each embodiment also can form other embodiments that it will be appreciated by those skilled in the art that through appropriate combination.
Claims (6)
1. a crystal silicon ingot furnace is used the solid-liquid interface measurement mechanism; Comprise: motor, driver, motion controller and quartz pushrod; Quartz pushrod is positioned at the top of crystal silicon ingot furnace and can vertically moves up and down, and it is characterized in that said quartz pushrod is provided with a pressure transducer; This pressure transducer is connected with motion controller through signal wire; Motion controller is connected with driver is two-way through control bus, and driver links to each other with motor and thinks that motor provides drive signal, and motor links to each other with quartz pushrod with the displacement of control quartz pushrod through a gear train.
2. crystal silicon ingot furnace according to claim 1 is used the solid-liquid interface measurement mechanism, it is characterized in that, this crystal silicon ingot furnace also comprises support with the solid-liquid interface measurement mechanism, and said quartz pushrod is installed in the crystal silicon ingot furnace through this support.
3. crystal silicon ingot furnace according to claim 2 is used the solid-liquid interface measurement mechanism, it is characterized in that, motor, driver and motion controller all are positioned at cantilever tip.
4. crystal silicon ingot furnace according to claim 3 is used the solid-liquid interface measurement mechanism, it is characterized in that, this crystal silicon ingot furnace also comprises the power supply that is positioned at the support bottom with the solid-liquid interface measurement mechanism and is positioned at the travel switch of support upside, motion controller below.
5. crystal silicon ingot furnace according to claim 1 is used the solid-liquid interface measurement mechanism, it is characterized in that, said pressure transducer is connected with gear train.
6. crystal silicon ingot furnace according to claim 1 is used the solid-liquid interface measurement mechanism, it is characterized in that, this crystal silicon ingot furnace also comprises the display screen that is positioned on the driver and shows the quartz pushrod displacement data with the solid-liquid interface measurement mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203572108U CN202255536U (en) | 2011-09-22 | 2011-09-22 | Solid liquid interface measuring device for crystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203572108U CN202255536U (en) | 2011-09-22 | 2011-09-22 | Solid liquid interface measuring device for crystalline silicon ingot furnace |
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| CN202255536U true CN202255536U (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011203572108U Expired - Lifetime CN202255536U (en) | 2011-09-22 | 2011-09-22 | Solid liquid interface measuring device for crystalline silicon ingot furnace |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103017712A (en) * | 2012-12-02 | 2013-04-03 | 淮北重科矿山机器有限公司 | Online detection device of clear water layer thickness of concentration tank |
| CN103409797A (en) * | 2013-08-27 | 2013-11-27 | 天威新能源控股有限公司 | Device for measuring long crystal bar of ingot furnace |
| CN103668449A (en) * | 2012-09-06 | 2014-03-26 | 镇江荣德新能源科技有限公司 | Solid-liquid interface determination device for silicon ingot furnace |
| CN104131343A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | Local heating solidification polysilicon impurity-removing device and impurity-removing method |
| CN104807520A (en) * | 2015-05-06 | 2015-07-29 | 上海东洋炭素有限公司 | Solid-liquid interface measuring device for silicon ingot furnace |
-
2011
- 2011-09-22 CN CN2011203572108U patent/CN202255536U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668449A (en) * | 2012-09-06 | 2014-03-26 | 镇江荣德新能源科技有限公司 | Solid-liquid interface determination device for silicon ingot furnace |
| CN103668449B (en) * | 2012-09-06 | 2017-06-06 | 镇江荣德新能源科技有限公司 | A kind of Solid-liquid interface determination device for silicon ingot furnace |
| CN103017712A (en) * | 2012-12-02 | 2013-04-03 | 淮北重科矿山机器有限公司 | Online detection device of clear water layer thickness of concentration tank |
| CN103017712B (en) * | 2012-12-02 | 2015-09-16 | 淮北重科矿山机器有限公司 | Concentration basin clear water layer thickness on-line measuring device |
| CN103409797A (en) * | 2013-08-27 | 2013-11-27 | 天威新能源控股有限公司 | Device for measuring long crystal bar of ingot furnace |
| CN104131343A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | Local heating solidification polysilicon impurity-removing device and impurity-removing method |
| CN104807520A (en) * | 2015-05-06 | 2015-07-29 | 上海东洋炭素有限公司 | Solid-liquid interface measuring device for silicon ingot furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215000 199 deer Road, hi tech Development Zone, Jiangsu, Suzhou Co-patentee after: CSI Solar Power (Luoyang) Co., Ltd. Patentee after: Artes sunshine Power Group Co. Ltd. Address before: 215000 199 deer Road, hi tech Development Zone, Jiangsu, Suzhou Co-patentee before: CSI Solar Power (Luoyang) Co., Ltd. Patentee before: Canadian (China) Investment Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180606 Address after: 471000 No. 10 Guan Lin Road, Luolong science and Technology Park, Luoyang, Henan Patentee after: Luoyang Artes Photovoltaic Technology Co. Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Co-patentee before: CSI Solar Power (Luoyang) Co., Ltd. Patentee before: Artes sunshine Power Group Co. Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120530 |