CN102237412A - 图像显示装置及其制造方法 - Google Patents
图像显示装置及其制造方法 Download PDFInfo
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- CN102237412A CN102237412A CN2011101046009A CN201110104600A CN102237412A CN 102237412 A CN102237412 A CN 102237412A CN 2011101046009 A CN2011101046009 A CN 2011101046009A CN 201110104600 A CN201110104600 A CN 201110104600A CN 102237412 A CN102237412 A CN 102237412A
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- thin
- electrode
- film transistor
- insulating film
- film
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- 239000004973 liquid crystal related substance Substances 0.000 description 72
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- 239000011521 glass Substances 0.000 description 13
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-098486 | 2010-04-22 | ||
JP2010098486A JP5638833B2 (ja) | 2010-04-22 | 2010-04-22 | 画像表示装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102237412A true CN102237412A (zh) | 2011-11-09 |
CN102237412B CN102237412B (zh) | 2014-03-12 |
Family
ID=44815040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110104600.9A Active CN102237412B (zh) | 2010-04-22 | 2011-04-22 | 图像显示装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8436358B2 (zh) |
JP (1) | JP5638833B2 (zh) |
CN (1) | CN102237412B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790064A (zh) * | 2012-07-26 | 2012-11-21 | 北京京东方光电科技有限公司 | 一种传感器及其制造方法 |
CN108091690A (zh) * | 2016-11-22 | 2018-05-29 | 北京小米移动软件有限公司 | 薄膜晶体管、阵列玻璃基板及液晶面板 |
CN109994513A (zh) * | 2017-12-08 | 2019-07-09 | 乐金显示有限公司 | 显示装置及制造该显示装置的方法 |
CN110456576A (zh) * | 2018-05-08 | 2019-11-15 | 群创光电股份有限公司 | 显示设备 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5404289B2 (ja) * | 2009-10-05 | 2014-01-29 | 株式会社ジャパンディスプレイ | 表示パネル |
KR101739636B1 (ko) | 2012-06-15 | 2017-05-24 | 소니 주식회사 | 표시 장치, 반도체 장치 및 표시 장치의 제조 방법 |
CN103178119B (zh) * | 2013-03-25 | 2015-07-29 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板制备方法以及显示装置 |
TWI539592B (zh) * | 2014-05-22 | 2016-06-21 | 友達光電股份有限公司 | 畫素結構 |
CN109690661B (zh) * | 2016-09-02 | 2021-01-01 | 夏普株式会社 | 有源矩阵基板和具备有源矩阵基板的显示装置 |
US10825839B2 (en) * | 2016-12-02 | 2020-11-03 | Innolux Corporation | Touch display device |
CN107256870A (zh) * | 2017-06-09 | 2017-10-17 | 京东方科技集团股份有限公司 | 一种阵列基板及制作方法、柔性显示面板、显示装置 |
KR102510397B1 (ko) * | 2017-09-01 | 2023-03-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 디스플레이 장치 |
KR20220015829A (ko) * | 2020-07-31 | 2022-02-08 | 엘지디스플레이 주식회사 | 화소 및 이를 포함하는 표시 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6747288B2 (en) * | 2000-03-08 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2004193248A (ja) * | 2002-12-10 | 2004-07-08 | Hitachi Ltd | 画像表示装置及びその製造方法 |
CN1680992A (zh) * | 2004-04-06 | 2005-10-12 | Lg.菲利浦Lcd株式会社 | 具有驱动电路的液晶显示器件及其制造方法 |
CN101165907A (zh) * | 2006-10-20 | 2008-04-23 | 株式会社日立显示器 | 图像显示装置及其制造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61225869A (ja) * | 1985-03-29 | 1986-10-07 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置とその製造方法 |
JP2715521B2 (ja) * | 1989-02-15 | 1998-02-18 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
JPH0887031A (ja) * | 1994-09-16 | 1996-04-02 | Hitachi Ltd | 液晶表示装置 |
JPH0992838A (ja) * | 1995-09-26 | 1997-04-04 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタおよびその製造方法 |
JP2988399B2 (ja) * | 1996-11-28 | 1999-12-13 | 日本電気株式会社 | アクティブマトリクス基板 |
US6501094B1 (en) * | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
JP2000171834A (ja) * | 1998-10-02 | 2000-06-23 | Hitachi Ltd | 液晶表示装置とその製造方法 |
US6261880B1 (en) * | 1999-05-24 | 2001-07-17 | Chi Mei Electronics Corp | Process for manufacturing thin film transistors |
JP2002314088A (ja) * | 2001-04-13 | 2002-10-25 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ基板の製造方法及び当該方法により製造された薄膜トランジスタアレイ基板を用いた液晶表示装置 |
JP2006251120A (ja) * | 2005-03-09 | 2006-09-21 | Seiko Epson Corp | 画素構造、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、電気光学装置、並びに電子機器 |
JP2008066537A (ja) * | 2006-09-07 | 2008-03-21 | Sharp Corp | 薄膜トランジスタ基板の製造方法、薄膜トランジスタ基板、並びにその薄膜トランジスタ基板を備えた液晶表示装置及び検出装置 |
TWI343129B (en) * | 2008-11-24 | 2011-06-01 | Ind Tech Res Inst | Thin film transistor |
-
2010
- 2010-04-22 JP JP2010098486A patent/JP5638833B2/ja active Active
-
2011
- 2011-04-18 US US13/088,515 patent/US8436358B2/en active Active
- 2011-04-22 CN CN201110104600.9A patent/CN102237412B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6747288B2 (en) * | 2000-03-08 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2004193248A (ja) * | 2002-12-10 | 2004-07-08 | Hitachi Ltd | 画像表示装置及びその製造方法 |
CN1680992A (zh) * | 2004-04-06 | 2005-10-12 | Lg.菲利浦Lcd株式会社 | 具有驱动电路的液晶显示器件及其制造方法 |
CN101165907A (zh) * | 2006-10-20 | 2008-04-23 | 株式会社日立显示器 | 图像显示装置及其制造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790064A (zh) * | 2012-07-26 | 2012-11-21 | 北京京东方光电科技有限公司 | 一种传感器及其制造方法 |
CN102790064B (zh) * | 2012-07-26 | 2015-04-08 | 北京京东方光电科技有限公司 | 一种传感器及其制造方法 |
US9312290B2 (en) | 2012-07-26 | 2016-04-12 | Beijing Boe Optoelectronics Technology Co., Ltd. | Sensor and method for fabricating the same |
CN108091690A (zh) * | 2016-11-22 | 2018-05-29 | 北京小米移动软件有限公司 | 薄膜晶体管、阵列玻璃基板及液晶面板 |
CN109994513A (zh) * | 2017-12-08 | 2019-07-09 | 乐金显示有限公司 | 显示装置及制造该显示装置的方法 |
CN109994513B (zh) * | 2017-12-08 | 2023-04-18 | 乐金显示有限公司 | 显示装置及制造该显示装置的方法 |
CN110456576A (zh) * | 2018-05-08 | 2019-11-15 | 群创光电股份有限公司 | 显示设备 |
CN110456576B (zh) * | 2018-05-08 | 2022-05-13 | 群创光电股份有限公司 | 显示设备 |
Also Published As
Publication number | Publication date |
---|---|
JP5638833B2 (ja) | 2014-12-10 |
JP2011228560A (ja) | 2011-11-10 |
US20110260168A1 (en) | 2011-10-27 |
CN102237412B (zh) | 2014-03-12 |
US8436358B2 (en) | 2013-05-07 |
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