CN102217046A - 用于形成导电材料的方法、用于选择性地形成导电材料的方法、用于形成铂的方法及用于形成导电结构的方法 - Google Patents
用于形成导电材料的方法、用于选择性地形成导电材料的方法、用于形成铂的方法及用于形成导电结构的方法 Download PDFInfo
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- CN102217046A CN102217046A CN2009801460974A CN200980146097A CN102217046A CN 102217046 A CN102217046 A CN 102217046A CN 2009801460974 A CN2009801460974 A CN 2009801460974A CN 200980146097 A CN200980146097 A CN 200980146097A CN 102217046 A CN102217046 A CN 102217046A
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- platinum
- conducting material
- precursor gas
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H01L23/5223—Capacitor integral with wiring layers
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- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
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- H10B—ELECTRONIC MEMORY DEVICES
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H01L2924/11—Device type
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Abstract
本发明揭示选择性地形成导电材料的方法及形成金属导电结构的方法。可图案化有机材料以暴露下伏材料的若干区域。可将所述下伏材料暴露于前驱物气体(例如,铂前驱物气体),所述前驱物气体与所述下伏材料反应而不与所述有机材料的位于所述下伏材料上方的剩余部分反应。可在原子层沉积过程中使用所述前驱物气体,在所述过程期间所述前驱物气体可选择性地与所述下伏材料反应以形成导电结构,但不与所述有机材料反应。举例来说,可在半导体装置制造的各种阶段期间将所述导电结构用作掩模来进行图案化。
Description
技术领域
在各种实施例中,本发明大体来说涉及用于选择性地形成导电材料(例如,铂)的方法、用于形成导电材料的方法及形成导电结构的方法。
本申请案主张2008年11月19日提出申请的“用于形成导电材料的方法、用于选择性地形成导电材料的方法、用于形成铂的方法及用于形成导电结构的方法(Methods for Forming a Conductive Material,Methods for Selectively Forming a Conductive Material,Methods for Forming Platinum,and Methods for Forming Conductive Structures)”的序列号为12/274,169的美国专利申请案的申请日期的权益。
背景技术
在集成电路的制造中,使用各种导电层。举例来说,在半导体装置(例如,动态随机存取存储器(DRAM)、静态随机存取存储器(SRAM)、铁电(FE)存储器及NAND)的形成期间,导电材料用于存储单元电容器的形成中以及互连结构及导电线中。因此,导电材料的形成是集成电路(IC)制作中的重要制造过程。
形成导电材料的要求可以是苛刻的,这是因为需要在用于集成电路中的其它材料所耐受的相当低的温度下沉积导电膜。另外,导电材料的高质量保形膜通常用于覆盖集成电路上的高度变化的形貌以形成各种导电结构,例如开口、深沟槽及容器电容器开口。此外,需要以高生产量形成此类膜。
举例来说,常规存储单元包含两个导电电极及***于其之间的电介质材料,且通常称为“金属-绝缘体-金属(MIM)”存储单元电容器。各种导电材料的一个或一个以上层可用于形成导电电极。随着电容器大小的减小,所述电介质材料的厚度必须减小以增加栅极电容。减小常规电介质材料(例如,二氧化硅)的厚度可导致增加的泄漏电流及装置的降低的可靠性。在所述两个导电电极之间利用高电介质常数材料在无伴随泄漏影响的情况下实现增加的栅极电容。已提议将导电材料(例如,铂、铑、铱、锇及其合金)用于此类MIM存储单元电容器。
制造许多存储单元电容器,其包含在小的高纵横比开口内由导电材料形成的电极层。术语“纵横比”是指集成电路的结构的深度或高度相对于其宽度。最常将铂用作导电材料,这是因为铂是通常减少单元中的泄漏的高功函数金属。然而,移除铂的实际蚀刻过程的缺失在电容器制造期间造成若干问题。用于形成铂电极的常规技术包含沉积铂,随后是CMP(化学机械抛光)或离子碾磨以移除所述铂的无关部分。然而,这些技术可导致铂电极中的不期望的缺陷。
参考图1A到图1C,图解说明在衬底102上形成包含容器型单元电容器的半导体结构100的常规方法。如图1A中所展示,衬底102可包含形成于其中的触点104且视情况可与下伏互连结构(未展示)接触。电介质材料106可形成于触点104及衬底102上方且可由例如二氧化硅(SiO2)等材料形成。掩模材料108形成于电介质材料106上方并与其接触且经图案化以形成孔口(未展示),从而暴露电介质材料106的期望在其处形成电容器结构的区域。可使用相对于掩模材料108选择性地移除电介质材料106的蚀刻过程来形成开口110。
此后,如图1B中所展示,在开口110内及在电介质材料106的上表面上形成待用于形成单元电容器的底部电极的导电材料112。然后,可将氧化物材料114施加于半导体结构100上方。然后,可平面化或蚀刻氧化物材料114及导电材料112的上覆于电介质材料106的水平部分以形成底部电极116。理想地,底部电极116的上部表面与电介质材料106的上部表面共面。
然而,在平面化期间,可将导电材料112推动到开口110的中心中,从而产生变形118,如图1C中所展示。导电材料112中的变形118产生不期望的轮廓,其妨碍在半导体结构100上的额外材料的形成。在导电材料112暴露于蚀刻过程以形成底部电极116时出现进一步的问题。在蚀刻期间,光致抗蚀剂材料120形成于导电材料112上方且经图案化以暴露导电材料112的待蚀刻的区域。在将导电材料112回蚀到电介质材料106后,光致抗蚀剂层120可即刻拉回而远离导电材料112,从而导致导电材料112的表面区域122被不期望地蚀刻。
为实现较高密度的存储器阵列,需要用于形成适于制造具有所需经增强密度及可靠性的复杂装置的导电材料及结构以满足未来需求的方法。
附图说明
图1A到图1C是图解说明在半导体结构上形成底部电极的常规方法的部分横截面图;
图2A到图2E是图解说明可用于在半导体结构上制造导电材料的方法的实施例的部分横截面图;及
图3是图解说明用于在半导体装置中形成接触孔的方法的实施例的部分横截面图。
具体实施方式
如下文进一步详细地论述,在一些实施例中,本发明包含用于选择性地形成导电材料(例如,铂)的方法。可相对于有机材料在衬底及绝缘材料中的至少一者上选择性地形成所述导电材料。可使用通过使期望在其上形成所述导电材料的表面与前驱物气体反应同时所述表面的剩余区域由所述有机材料(例如,光致抗蚀剂材料)保护而进行的原子层沉积过程来形成所述导电材料。在额外实施例中,本发明包括用于通过将有机材料施加于上覆于衬底的绝缘材料上方来形成导电结构的方法。形成延伸穿过所述有机材料及所述绝缘材料的至少一个开口以暴露所述衬底。使所述绝缘材料及衬底经受前驱物气体,所述前驱物气体选择性地与所述绝缘材料及衬底反应以在其上形成至少一种导电材料而不与所述有机材料反应。在所述至少一种导电材料上方形成电介质材料且在所述电介质材料上方形成另一导电材料,从而产生至少一个电容器结构。
如本文中所使用,术语“衬底”意指且包含在其上形成额外材料的基底材料或构造。所述衬底可以是半导体衬底、位于支撑结构上的基底半导体层、金属电极或其上形成有一个或一个以上层、结构或区域的半导体衬底。所述衬底可以是常规硅衬底或包括半导电材料层的其它体衬底。如本文中所使用,术语“体衬底”不仅意指并包含硅晶片,而且意指并包含绝缘体上硅(“SOI”)衬底(例如,蓝宝石上硅(“SOS”)衬底及玻璃上硅(“SOG”)衬底)、位于基底半导体基础上的外延硅层,及其它半导体或光电材料(例如,硅-锗、锗、砷化镓、氮化镓及磷化铟)。所述衬底可以是经掺杂或未经掺杂的。
以下描述提供特定细节(例如,材料类型、材料厚度及处理条件)以提供对本发明实施例的透彻描述。然而,所属领域的技术人员应理解,可在不采用这些特定细节的情况下实践本发明的实施例。实际上,本发明的实施例可结合业界中所采用的常规半导体制造技术来实践。另外,下文提供的描述并不形成用于制造其中存在导电结构的半导体装置的完整过程流程,且下文所述的半导体装置并不形成完整电子装置。下文仅详细描述为理解本发明的实施例所必需的那些过程动作及导电结构或半导体装置。由所述导电结构形成完整半导体装置或由所述半导体装置形成完整电子装置的额外处理动作可通过本文中未描述的常规制造技术来执行。
本文所述的材料可通过任一适合技术形成,包含(但不限于)旋涂、毯覆式涂覆、化学气相沉积(“CVD”)、原子层沉积(“ALD”)、等离子体增强型ALD或物理气相沉积(“PVD”)。另一选择为,可原位生长所述材料。端视待形成的特定材料,所属领域的技术人员可选择用于沉积或生长材料的技术。此外,尽管本文所描述及图解说明的材料可形成为若干层,但所述材料并不限于此且可形成为其它三维配置。
现将参考图式,其中相同编号表示相同元件。所述图式不必按比例绘制。
图2A到图2E是图解说明形成半导体结构200的方法的部分横截面示意图。半导体结构200可包含其中形成有触点204的衬底202、可选势垒材料、绝缘材料208及有机材料210。如先前所论述,衬底202可以是半导体材料或例如玻璃或蓝宝石等材料的全部或部分晶片。可使用常规图案化及沉积方法(本文中未详细描述)在衬底202中由导电材料(例如,多晶硅)形成触点204。以非限制性实例的方式,触点204可由导电材料(例如,多晶硅、氮化钛、铑、钌、铱或其组合)形成,且可用于将金属-绝缘体-金属(MIM)存储电容器电耦合到一个或一个以上相关联晶体管装置或导电线,其将在下文中详细描述。
所述势垒材料(未展示)(如果存在)可形成于衬底202及触点204的表面上方并与其接触。所述势垒材料可包含(举例来说)氮化物材料,例如,氮化钛(TiN)、氮化钽(TaN)或氮化钽硅(TaSiN)。另外,所述势垒材料可包含氧势垒材料(未展示),其包含(举例来说)氧化铑、铱或掺杂有二氧化硅的金属。
绝缘材料208可形成于衬底202、触点204及所述势垒材料上方且与其接触(如果存在)。以非限制性实例的方式,绝缘材料208可由二氧化硅、磷硅酸盐玻璃(PSG)、硼硅酸盐玻璃(BSG)及硼磷硅酸盐玻璃(BPSG)形成。
有机材料210可形成于绝缘材料208上方并与其接触且可包含(举例来说)聚合物材料。有机材料210可以是防止导电材料在其上成核及生长的材料。以非限制性实例的方式,有机材料210可以是包含基于重氮萘醌的材料、基于聚羟基苯乙烯的材料、基于苯酚甲醛树脂的材料或基于环氧树脂的材料的光致抗蚀剂材料。另外,有机材料210可包含聚合物,例如,聚苯乙烯(PS)、聚乙烯(PE)、聚丙烯(PP)、聚氯丁二烯(CR)、聚乙烯醚、聚(乙酸乙烯酯)(PVAc)、聚(氯乙烯)(PVC)、聚硅氧烷、聚(甲基丙烯酸甲酯)(PMMA)、聚氨酯(PU)、聚丙烯酸酯、聚丙烯酰胺、酚醛树脂、聚甲基戊二酰亚胺(PMGI)、聚甲基硅烷(PMS)、非芳族聚合物、聚甲基戊二酰亚胺以及其共聚物及混合物。可通过任一适合技术(例如,旋转浇铸、旋涂、喷镀、墨涂或浸涂)来将有机材料210施加于绝缘材料208上方。可形成有机材料210以防止导电材料在其上的沉积,此将在下文中进一步详细描述。作为非限制性实例,有机材料210可以是由不包含羟基的聚合物材料形成且可形成为大于所述聚合物材料的一个单层的平均厚度的厚度。有机材料210中可包含孔口212,所述孔口暴露绝缘材料208的表面。可通过使用常规技术(本文中未详细描述)图案化有机材料210来形成孔口212。
仍参考图2A,可通过移除绝缘材料208的通过有机材料210中的孔口212暴露的至少一部分来在半导体结构200中形成开口214(以虚线展示)。如果开口214延伸穿过绝缘材料208,那么开口214可由衬底202及触点204的上部表面216以及绝缘材料208的侧壁218来界定。如果开口214部分地延伸到绝缘材料208中,那么开口214可由绝缘材料208的剩余部分的上部表面及绝缘材料208的侧壁218来界定。以非限制性实例的方式,开口214可形成为杯状容器(如图2A中的虚线所展示),且可具有各种横截面形状,例如,圆形、正方形、矩形、梯形、三角形、椭圆形或长菱形。举例来说,开口214可经形成以具有小于约50nm的特征大小或临界尺寸且可具有大于约40∶1的纵横比。
在一个实施例中,所述势垒材料(如果存在)是氮化钛,绝缘材料208是二氧化硅,且有机材料210是包含苯酚甲醛聚合物与双叠氮萘醌的混合物的光致抗蚀剂材料。可使用含氟蚀刻剂(例如,包含氢氟酸的溶液或包含四氟甲烷(CF4)或六氟丁二烯(C4F6)的等离子体)来在不移除所述势垒材料(如果存在)或有机材料210的情况下移除绝缘材料208且形成开口214。为清晰起见,以下图式中所绘示的半导体结构200包含单个开口214,所述单个开口延伸穿过绝缘材料208的厚度到达所述势垒材料(如果存在),或另一选择为,到达衬底202及触点204。然而,在其它实施例中,可在半导体结构200中形成多个开口214。另外,开口214可延伸到任何下伏材料中,例如势垒材料或衬底202。开口214可经定位以促进触点204与额外结构之间的接近,所述额外结构可包含导电区域(例如,晶体管或导电线),其将在下文中进一步详细描述。
在移除绝缘材料208的一部分以形成开口214之后,可清洁由开口214暴露的表面。为清洁经暴露表面,可将半导体结构200暴露于移除残余物(例如,有机残余物)的蚀刻过程且在大致不移除有机材料210的情况下大致整平绝缘材料208及衬底202的表面上的粗糙。举例来说,可使用湿式蚀刻过程(使用含氟化氢(HF)的溶液)或干式蚀刻过程(使用包含臭氧(O3)的等离子体)。作为非限制性实例,可将以约100∶1的比率包含氟化氢及氟化铵(NH4F)的混合物的溶液施加到由开口214暴露的表面达约1分钟以清洁其表面。清洁半导体结构200可从开口214内的绝缘材料208的侧壁218及势垒材料(如果存在)或触点204以及衬底202的上部表面216移除聚合物、有机材料及其它残余物。如将进一步详细描述,这些残余物的移除可促进材料(例如,铂)的沉积。
参考图2B,在清洁半导体结构200之后,导电材料220可形成于绝缘材料208的侧壁218以及衬底202及触点204或势垒材料(如果存在)的上部表面216上,而不形成于半导体结构200的由有机材料210保护的表面222上。可使用ALD过程来保形地沉积导电材料220。举例来说,可通过将半导体结构200暴露于前驱物气体来执行ALD过程,所述前驱物气体与绝缘材料208、衬底202或势垒材料(如果存在)反应,但不与有机材料210反应。通过利用ALD过程,可一次形成导电材料220的单个单层。在所述ALD过程期间,通过经暴露表面与所述前驱物气体之间的自限制性表面反应来控制导电材料220的生长。所述ALD过程实现导电材料220的一个或一个以上单层的受控沉积。可在足够低的温度下执行通过ALD形成导电材料220以使得有机材料210保持完整且不受损坏或降级。因而,有机材料210可用作掩模以保护绝缘材料208的下伏区域。不受限于任何特定理论,据信有机材料210可防止绝缘材料208的表面222与前驱物气体之间发生反应,此防止在ALD过程期间导电材料220在表面222上的成核及生长。
导电材料220可以是(举例来说)铂、钛、钽、铱、铑、钌、铜、其氧化物或氮化物、其组合或其合金。适于产生这些导电材料的ALD前驱物气体为此项技术中所熟知,且因此本文中未对其进行详细描述。作为非限制性实例,可将导电材料220沉积为从约到约的范围内的厚度。为简单起见,将导电材料220绘示为包含单个层。然而,在一些实施例中,导电材料220可以是由多个层形成。为沉积导电材料220,可将半导体结构200暴露于反应室中的前驱物气体达充足时间量以形成导电材料220的所期望厚度。所述反应室可维持于从约50℃到约300℃的范围内的温度下且维持于从约0.0001托到约5托的范围内的恒定压力或可变压力下。
以非限制性实例的方式,如果铂是所期望导电材料220,那么前驱物气体可包含(但不限于)(三甲基)甲基环戊二烯铂(Pt10)、(三甲基)环戊二烯基(C5H5)Pt(CH3)3、Pt(乙酰基丙酮酸盐)2、Pt(PF3)4、Pt(CO)2Cl2、顺式-[Pt(CH3)2((CH3)NC)2]或六氟乙酰丙酮铂。前驱物气体可流动到开口214中以在不于由有机材料210覆盖的表面上形成铂的情况下于绝缘材料208、触点204、衬底202及势垒材料(如果存在)的经暴露表面上形成铂。换句话说,可在半导体结构200的经暴露表面上选择性地沉积铂,除有机材料210的经暴露表面以外。
通过使用有机材料210来防止将导电材料220沉积于半导体结构200的表面222上,导电材料220的表面224可经形成以在不使用额外平面化或蚀刻动作的情况下大致与绝缘材料208的表面222共面。由于导电材料220是大致无缺陷或变形,因此形成于半导体结构200上的额外材料可以是大致无缺陷。此外,通过以用于形成开口214(图2A)的相同有机材料210来保护绝缘材料208的表面222,不使用进一步处理动作来在半导体结构200的所期望位置上形成导电材料220。因此,本方法在不进行进一步遮蔽及蚀刻动作的情况下实现导电材料220的沉积,从而减少制造半导体结构200的时间及费用。
如所属领域的技术人员将认识到,尽管本文中将导电材料220图解说明为选择性地形成于半导体结构200中的开口214内,但可使用类似过程将导电材料200选择性地沉积于具有不同外形的各种其它表面及结构上。作为非限制性实例,导电材料220可形成于孔口212中(如图2A中所展示),或导电材料220可形成于其部分由有机材料210保护的其它材料的经暴露表面上。
参考图2C,在形成导电材料220之后,可移除有机材料210的一部分以暴露绝缘材料208的期望在其处形成电容器结构的表面226。可通过使用常规图案化技术(例如,遮蔽及蚀刻)来移除有机材料210的所期望部分而暴露绝缘材料208的表面226。
如图2D中所展示,电介质材料228可施加于导电材料220及绝缘材料208的表面226上方且与其接触,此后另一导电材料230可施加于电介质材料228上方且与其接触以形成电容器结构232。作为非限制性实例,电介质材料228可以是具有高电介质常数的材料(例如,氧化钽、五氧化二钽(Ta2O5)、钛酸锶(SrTiO3)、钛酸锶钡(BST)或氧氮化硅(SiON)),且可使用(举例来说,CVD或PVD)来形成。另一导电材料230可包含(举例来说)铂、钛、钽、铱、铑、钌、其氧化物或氮化物、其组合或其合金。可使用例如CVD或PVD的过程来形成另一导电材料230。为简单起见,将另一导电材料230绘示为包含单个层。然而,在一些实施例中,另一导电材料230可包含金属或其它导电材料的多个层。以非限制性实例的方式,另一导电材料230可以是铂且可相对于有机材料210的剩余部分选择性地形成于电介质材料228上,如先前所述。
参考图2E,在形成电容器结构232之后,形成有机材料210。作为非限制性实例,如果有机材料210是光致抗蚀剂材料,那么可使用常规灰化过程来在不使另一导电材料230或绝缘材料208损坏或降级的情况下移除所述光致抗蚀剂材料。另外,可使用各向同性蚀刻过程(例如,湿式化学蚀刻或部分地各向同性反应性离子蚀刻(RIE))来移除对于另一导电材料230具有选择性的绝缘材料208。举例来说,如果绝缘材料208包含二氧化硅且另一导电材料230包含铂,那么使用相对于二氧化硅选择性地移除铂的湿式蚀刻过程。
如图3中所展示,可提供包含多个电容器结构232作为邻近掩模结构242的半导体装置300。半导体装置300可包含上覆于衬底202的绝缘材料208、触点204及包含导电材料220、电介质材料228及另一导电材料230的电容器结构232,如图2D中所展示。另外,半导体装置300可包含相对于源极区域236、汲极区域238及场氧化物区域240而形成的晶体管装置234。可通过本文中未详细描述的常规技术来形成晶体管装置234。可执行各向异性干式反应性离子(即,等离子体)蚀刻过程或湿式化学蚀刻过程以相对于另一导电材料230及邻近掩模结构242移除绝缘材料208的一部分以暴露晶体管装置234的区域。绝缘材料208的经移除部分可形成接触孔244。邻近掩模结构242可各自包含通过上文参考图2A到图2D所描述的方法而形成的电容器结构232。在一些实施例中,晶体管装置234中的至少一者可与至少一个导电线(未展示)电连通。可通过本文中未详细描述的常规技术来形成所述导电线。
尽管可易于对本发明作出各种修改及替代形式,但特定实施例已以实例方式展示于图式中并已详细描述于本文中。然而,应理解,本发明并不限于所揭示的特定形式。而是,本发明涵盖归属于由以上所附权利要求书及其合法等效形式界定的本发明范围内的所有修改、变更及替代形式。
Claims (18)
1.一种选择性地形成导电材料的方法,其包括:
移除有机材料及下伏材料中的每一者的一部分以形成延伸穿过所述有机材料且至少部分地延伸到所述下伏材料中的至少一个开口;
清洁由所述至少一个开口所暴露的表面;及
在至少一个开口中选择性地形成导电材料。
2.根据权利要求1所述的方法,其中移除有机材料及下伏材料中的每一者的一部分包括通过聚合物材料中的至少一个孔口移除所述下伏材料的一部分。
3.根据权利要求1所述的方法,其进一步包括从由以下各项组成的群组中选择所述有机材料:聚苯乙烯(PS)、聚乙烯(PE)、聚丙烯(PP)、聚氯丁二烯(CR)、聚乙烯醚、聚(乙酸乙烯酯)(PVAc)、聚(氯乙烯)(PVC)、聚硅氧烷、聚(甲基丙烯酸甲酯)(PMMA)、聚氨酯(PU)、聚丙烯酸酯、聚丙烯酰胺、酚醛树脂、聚甲基戊二酰亚胺(PMGI)、聚甲基硅烷(PMS)、非芳族聚合物、聚环烯烃以及其共聚物及混合物。
4.根据权利要求1所述的方法,其进一步包括从由以下各项组成的群组中选择所述有机材料:基于重氮萘醌的材料、基于聚羟基苯乙烯的材料、基于苯酚甲醛树脂的材料及基于环氧树脂的材料。
5.根据权利要求1所述的方法,其中清洁由至少一个开口所暴露的表面包括使由所述至少一个开口所暴露的所述表面经受包括氟化氢的溶液及包括臭氧的等离子体中的至少一者。
6.根据权利要求1所述的方法,其中在所述至少一个开口中选择性地形成导电材料包括通过原子层沉积来沉积所述导电材料。
7.根据权利要求6所述的方法,其中通过原子层沉积来沉积所述导电材料包括使前驱物气体选择性地与所述下伏材料反应而不使所述前驱物气体与所述有机材料反应。
8.根据权利要求1所述的方法,其中在至少一个开口中选择性地形成导电材料包括在至少一个开口中选择性地形成铂、钛、钽、铱、铑、钌、铜、其氧化物或氮化物、其组合或其合金。
9.根据权利要求1所述的方法,其中移除有机材料及下伏材料中的每一者的一部分包括移除有机材料及绝缘材料中的每一者的一部分以形成由所述绝缘材料的侧壁及衬底的上表面界定的至少一个开口。
10.根据权利要求1所述的方法,其中在所述至少一个开口中选择性地形成导电材料包括在所述下伏材料的经暴露表面上形成导电材料而不在所述有机材料上形成所述导电材料。
12.根据权利要求1所述的方法,其中在所述至少一个开口中选择性地形成导电材料包括将所述至少一个开口暴露于(三甲基)甲基环戊二烯铂。
13.一种选择性地沉积铂的方法,其包括:
将铂前驱物气体引入到材料的通过有机材料中的开口暴露的表面;及
使所述铂前驱物气体与所述材料的所述表面反应以在其上形成铂而不使所述铂前驱物气体与所述有机材料反应。
14.根据权利要求13所述的方法,其进一步包括在将所述铂前驱物气体引入到所述材料的所述表面之前施加能够移除所述表面上的有机残余物的蚀刻剂。
15.根据权利要求13所述的方法,其中使所述铂前驱物气体与所述材料的所述表面反应包括从由以下各项组成的群组中选择所述铂前驱物气体:(三甲基)甲基环戊二烯铂、(三甲基)环戊二烯基(C5H5)Pt(CH3)3、Pt(乙酰基丙酮酸盐)2、Pt(PF3)4、Pt(CO)2Cl2、顺式-[Pt(CH3)2((CH3)NC)2]及六氟乙酰丙酮铂。
16.一种用于形成至少一个导电结构的方法,其包括:
将有机材料施加于上覆于衬底上的绝缘材料上方;
形成延伸穿过所述有机材料及所述绝缘材料的至少一个开口以暴露所述衬底;
使所述绝缘材料及所述衬底经受选择性地与所述绝缘材料及所述衬底反应而不与所述有机材料反应的前驱物气体以形成至少一种导电材料;及
在所述至少一种导电材料上方形成电介质材料且在所述电介质材料上方形成另一导电材料以形成至少一个电容器结构。
17.根据权利要求16所述的方法,其进一步包括利用所述至少一个电容器结构作为掩模来移除所述绝缘材料的邻近部分而不移除所述另一导电材料。
18.根据权利要求16所述的方法,其中移除所述绝缘材料的邻近部分包括暴露所述衬底中的晶体管装置。
19.根据权利要求16所述的方法,其中使所述绝缘材料及所述衬底经受选择性地与所述绝缘材料及所述衬底反应而不与所述有机材料反应的前驱物气体包括通过原子层沉积形成所述至少一种导电材料。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107393582A (zh) * | 2013-10-31 | 2017-11-24 | 美光科技公司 | 多位铁电性存储器装置及其形成方法 |
CN107406975A (zh) * | 2015-03-13 | 2017-11-28 | 株式会社村田制作所 | 原子层沉积抑制材料 |
CN109979949A (zh) * | 2017-12-27 | 2019-07-05 | 瑞萨电子株式会社 | 半导体装置及其制造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8753933B2 (en) | 2008-11-19 | 2014-06-17 | Micron Technology, Inc. | Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures |
US8945305B2 (en) | 2010-08-31 | 2015-02-03 | Micron Technology, Inc. | Methods of selectively forming a material using parylene coating |
US8524599B2 (en) * | 2011-03-17 | 2013-09-03 | Micron Technology, Inc. | Methods of forming at least one conductive element and methods of forming a semiconductor structure |
US8853713B2 (en) * | 2012-05-07 | 2014-10-07 | Micron Technology, Inc. | Resistive memory having confined filament formation |
KR102587363B1 (ko) * | 2015-07-31 | 2023-10-10 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 도전성 기판 및 도전성 기판 제조방법 |
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KR102587364B1 (ko) * | 2015-07-31 | 2023-10-10 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 도전성 기판 및 도전성 기판 제조방법 |
US9437714B1 (en) | 2015-12-09 | 2016-09-06 | International Business Machines Corporation | Selective gate contact fill metallization |
US11088239B2 (en) * | 2018-11-30 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cap structure for trench capacitors |
CN111326654A (zh) * | 2018-12-13 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 半导体装置及其制造方法 |
JP2022146577A (ja) | 2021-03-22 | 2022-10-05 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5320978A (en) * | 1993-07-30 | 1994-06-14 | The United States Of America As Represented By The Secretary Of The Navy | Selective area platinum film deposition |
US20020115284A1 (en) * | 2001-02-20 | 2002-08-22 | United Microelectronics Corp., No. 3 | Method of cleaning a dual damascene structure |
CN1378288A (zh) * | 2001-04-04 | 2002-11-06 | 华邦电子股份有限公司 | 凹陷型堆栈电容与其接触插塞及其制造方法 |
US20040147103A1 (en) * | 2001-08-30 | 2004-07-29 | Weimin Li | Technique for high efficiency metaloganic chemical vapor deposition |
US6861693B2 (en) * | 1998-07-23 | 2005-03-01 | Micron Technology, Inc. | Continuous good step coverage CVD platinum metal deposition |
JP2005347472A (ja) * | 2004-06-02 | 2005-12-15 | Tokyo Electron Ltd | 基板処理方法および半導体装置の製造方法 |
US20060115983A1 (en) * | 2004-11-30 | 2006-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
CN1815710A (zh) * | 2005-02-01 | 2006-08-09 | 台湾积体电路制造股份有限公司 | 具有低介电常数介电层的半导体元件的制造方法 |
CN1925151A (zh) * | 2005-08-19 | 2007-03-07 | 国际商业机器公司 | 半导体结构及其制造方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60111421A (ja) | 1983-11-22 | 1985-06-17 | Toshiba Corp | 半導体装置の製造方法 |
JPH02178922A (ja) | 1988-12-29 | 1990-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0629246A (ja) | 1991-02-04 | 1994-02-04 | Internatl Business Mach Corp <Ibm> | 選択的な無電解メッキの方法 |
JPH0574963A (ja) | 1991-06-06 | 1993-03-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5270241A (en) * | 1992-03-13 | 1993-12-14 | Micron Technology, Inc. | Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing |
JPH0653331A (ja) | 1992-07-31 | 1994-02-25 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2956482B2 (ja) | 1994-07-29 | 1999-10-04 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
JPH0920980A (ja) | 1995-07-04 | 1997-01-21 | Mitsubishi Materials Corp | 白金膜の製造方法 |
US5891804A (en) * | 1996-04-18 | 1999-04-06 | Texas Instruments Incorporated | Process for conductors with selective deposition |
JPH1174354A (ja) | 1997-06-30 | 1999-03-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6271131B1 (en) * | 1998-08-26 | 2001-08-07 | Micron Technology, Inc. | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
US6218297B1 (en) * | 1998-09-03 | 2001-04-17 | Micron Technology, Inc. | Patterning conductive metal layers and methods using same |
JP2000183064A (ja) | 1998-12-16 | 2000-06-30 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
US6421223B2 (en) * | 1999-03-01 | 2002-07-16 | Micron Technology, Inc. | Thin film structure that may be used with an adhesion layer |
JP2000269163A (ja) | 1999-03-18 | 2000-09-29 | Sony Corp | 金属膜の形成方法及び配線の形成方法 |
JP2001160616A (ja) | 1999-12-03 | 2001-06-12 | Hitachi Ltd | 誘電体素子とその製造方法 |
JP3976462B2 (ja) | 2000-01-26 | 2007-09-19 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
KR100403611B1 (ko) * | 2000-06-07 | 2003-11-01 | 삼성전자주식회사 | 금속-절연체-금속 구조의 커패시터 및 그 제조방법 |
JP4376427B2 (ja) | 2000-06-13 | 2009-12-02 | 月島機械株式会社 | 回転ドラム式濃縮装置および汚泥の処理方法 |
US6461909B1 (en) * | 2000-08-30 | 2002-10-08 | Micron Technology, Inc. | Process for fabricating RuSixOy-containing adhesion layers |
US6524912B1 (en) | 2000-08-31 | 2003-02-25 | Micron Technology, Inc. | Planarization of metal container structures |
JP4316159B2 (ja) | 2001-05-24 | 2009-08-19 | 東芝メモリシステムズ株式会社 | 半導体記憶装置及び情報の記憶方法 |
KR100418581B1 (ko) * | 2001-06-12 | 2004-02-11 | 주식회사 하이닉스반도체 | 메모리 소자의 제조방법 |
KR100448852B1 (ko) * | 2001-12-26 | 2004-09-18 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
US6824816B2 (en) * | 2002-01-29 | 2004-11-30 | Asm International N.V. | Process for producing metal thin films by ALD |
US6984301B2 (en) * | 2002-07-18 | 2006-01-10 | Micron Technology, Inc. | Methods of forming capacitor constructions |
US6830983B2 (en) * | 2002-08-29 | 2004-12-14 | Micron Technology, Inc. | Method of making an oxygen diffusion barrier for semiconductor devices using platinum, rhodium, or iridium stuffed with silicon oxide |
US6861355B2 (en) * | 2002-08-29 | 2005-03-01 | Micron Technology, Inc. | Metal plating using seed film |
JP2004119950A (ja) * | 2002-09-30 | 2004-04-15 | Sony Corp | 半導体装置の製造方法 |
US6838339B2 (en) * | 2003-06-05 | 2005-01-04 | Infineon Technologies Ag | Area-efficient stack capacitor |
WO2005041280A1 (en) * | 2003-10-28 | 2005-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7429402B2 (en) * | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
US7189615B2 (en) * | 2005-01-18 | 2007-03-13 | Texas Instruments Incorporated | Single mask MIM capacitor and resistor with in trench copper drift barrier |
US7482281B2 (en) * | 2005-09-29 | 2009-01-27 | Tokyo Electron Limited | Substrate processing method |
KR100698102B1 (ko) * | 2005-10-05 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속배선 형성방법 |
US7834457B2 (en) * | 2008-02-28 | 2010-11-16 | International Business Machines Corporation | Bilayer metal capping layer for interconnect applications |
US8753933B2 (en) | 2008-11-19 | 2014-06-17 | Micron Technology, Inc. | Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures |
-
2008
- 2008-11-19 US US12/274,169 patent/US8753933B2/en active Active
-
2009
- 2009-11-05 JP JP2011536396A patent/JP5387928B2/ja active Active
- 2009-11-05 KR KR1020117011844A patent/KR101251827B1/ko active IP Right Grant
- 2009-11-05 CN CN200980146097.4A patent/CN102217046B/zh active Active
- 2009-11-05 EP EP09828004.3A patent/EP2351071B1/en active Active
- 2009-11-05 WO PCT/US2009/063440 patent/WO2010059434A2/en active Application Filing
- 2009-11-17 TW TW98139026A patent/TWI447811B/zh active
-
2014
- 2014-05-14 US US14/277,507 patent/US9023711B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5320978A (en) * | 1993-07-30 | 1994-06-14 | The United States Of America As Represented By The Secretary Of The Navy | Selective area platinum film deposition |
US6861693B2 (en) * | 1998-07-23 | 2005-03-01 | Micron Technology, Inc. | Continuous good step coverage CVD platinum metal deposition |
US20020115284A1 (en) * | 2001-02-20 | 2002-08-22 | United Microelectronics Corp., No. 3 | Method of cleaning a dual damascene structure |
CN1378288A (zh) * | 2001-04-04 | 2002-11-06 | 华邦电子股份有限公司 | 凹陷型堆栈电容与其接触插塞及其制造方法 |
US20040147103A1 (en) * | 2001-08-30 | 2004-07-29 | Weimin Li | Technique for high efficiency metaloganic chemical vapor deposition |
JP2005347472A (ja) * | 2004-06-02 | 2005-12-15 | Tokyo Electron Ltd | 基板処理方法および半導体装置の製造方法 |
US20060115983A1 (en) * | 2004-11-30 | 2006-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
CN1815710A (zh) * | 2005-02-01 | 2006-08-09 | 台湾积体电路制造股份有限公司 | 具有低介电常数介电层的半导体元件的制造方法 |
CN1925151A (zh) * | 2005-08-19 | 2007-03-07 | 国际商业机器公司 | 半导体结构及其制造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107393582A (zh) * | 2013-10-31 | 2017-11-24 | 美光科技公司 | 多位铁电性存储器装置及其形成方法 |
CN107393582B (zh) * | 2013-10-31 | 2020-10-23 | 美光科技公司 | 多位铁电性存储器装置及其形成方法 |
CN107406975A (zh) * | 2015-03-13 | 2017-11-28 | 株式会社村田制作所 | 原子层沉积抑制材料 |
CN107406975B (zh) * | 2015-03-13 | 2019-07-05 | 株式会社村田制作所 | 原子层沉积抑制材料 |
CN109979949A (zh) * | 2017-12-27 | 2019-07-05 | 瑞萨电子株式会社 | 半导体装置及其制造方法 |
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EP2351071B1 (en) | 2020-05-20 |
EP2351071A4 (en) | 2013-07-03 |
WO2010059434A2 (en) | 2010-05-27 |
CN102217046B (zh) | 2015-04-29 |
WO2010059434A3 (en) | 2010-07-29 |
US20100124821A1 (en) | 2010-05-20 |
US20140248771A1 (en) | 2014-09-04 |
US9023711B2 (en) | 2015-05-05 |
KR20110084427A (ko) | 2011-07-22 |
EP2351071A2 (en) | 2011-08-03 |
TW201027626A (en) | 2010-07-16 |
TWI447811B (zh) | 2014-08-01 |
JP2012509576A (ja) | 2012-04-19 |
US8753933B2 (en) | 2014-06-17 |
KR101251827B1 (ko) | 2013-04-09 |
JP5387928B2 (ja) | 2014-01-15 |
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