CN102200552A - Method and equipment for testing square resistor of silicon sheet - Google Patents
Method and equipment for testing square resistor of silicon sheet Download PDFInfo
- Publication number
- CN102200552A CN102200552A CN2010105486361A CN201010548636A CN102200552A CN 102200552 A CN102200552 A CN 102200552A CN 2010105486361 A CN2010105486361 A CN 2010105486361A CN 201010548636 A CN201010548636 A CN 201010548636A CN 102200552 A CN102200552 A CN 102200552A
- Authority
- CN
- China
- Prior art keywords
- support board
- test
- pit
- test probe
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 160
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 140
- 239000010703 silicon Substances 0.000 title claims abstract description 140
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000523 sample Substances 0.000 claims abstract description 72
- 230000003287 optical effect Effects 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 10
- 150000003376 silicon Chemical class 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000005299 abrasion Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010998 test method Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention provides a method for testing a square resistor of a silicon sheet. The method comprises the following steps of: placing the silicon sheet to be tested on an object-carrying board, wherein the silicon sheet to be tested and the object-carrying board are fixed relatively; moving the object-carrying board so that a test probe is aligned to a point to be tested on the silicon sheet to be tested; and contacting the test probe and the point to be tested so as to test the square resistor. Correspondingly, the invention also provides an object-carrying table for carrying the silicon sheet and testing the square resistor, and a square resistor tester. By the method and the equipment for testing the square resistor of the silicon sheet, reduction of the photoelectric conversion efficiency of the silicon sheet due to abrasion of the silicon sheet can be avoided; furthermore, a trigger point is arranged on the object-carrying board so that different operators can test the same position on the silicon sheet; and test error due to operation of different operators can be avoided.
Description
Technical field
The present invention relates to silicon chip of solar cell and make the field, relate in particular to a kind of method of testing and equipment of square resistance of silicon chip.
Background technology
In conventional at present solar cell fabrication process flow process, diffusion technique is one of committed step, forms " heart " part---the PN junction of crystal silicon solar energy battery in diffusion process.In this technological process, silicon chip surface can form one deck impurity diffusion layer with the substrate conductivity type opposite, conventional crystal silicon solar energy battery generally passes through phosphorus doping at P type (boron-containing impurities) silicon chip surface, form one deck N type impurity layer at silicon chip surface, like this, the intersection at two kinds of conduction types has just formed PN junction.
Because square resistance R
=1/Nq μ * x
j, wherein, N is the impurity concentration of silicon chip surface, and q is an electron charge, and μ is a carrier mobility, x
jThe degree of depth for PN junction.So, by the measurement of square resistance, just can indirect reaction go out the impurity concentration of silicon chip surface and the junction depth situation of PN junction, and, can judge whether present diffusion technique meets the requirement of desired value by measured value, whether stablely produce.Therefore, in order to monitor two key parameter μ and the q after the diffusion, often need to measure the square resistance of diffusion back silicon chip.Generally all be square resistance to be tested at present by the four point probe tester.At present, carrying out square resistance when measuring to spreading the back silicon chip, though the four point probe tester that is adopted belongs to semi-automatic type, just realized probe when vertical direction moves by key control, its probe and test board all are fixed.Now, domestic nearly all crystal silicon solar energy battery production firm and scientific research institutions etc. all adopt the four point probe tester to carry out the measurement of square resistance.But existing four point probe tester is because the inherent characteristics of its structure and test aspect has determined it that a lot of defectives and deficiency are arranged in measuring process:
The test probe of existing four point probe tester and test platform (placing the platform of silicon slice under test) all are fixed.Therefore, when the silicon chip diverse location is carried out dependence test, silicon chip just need constantly move around, will bring following problem like this: first, friction between silicon chip and the test platform can the wear and tear pyramid and the PN junction of silicon chip surface, can cause certain loss to the conversion efficiency of battery like this, after the silicon chip that process is tested was like this made solar battery sheet, the absolute value of its photoelectric transformation efficiency can be than the battery of making without the silicon chip of test (promptly silicon chip surface not being caused friction) low about 2%; Second, need diverse location is tested in the test process of silicon chip square resistance, when testing, because probe presses down by operating personnel's button and realizes, make the randomness of test increase greatly like this, particularly in multiple spot (as 16 points, 25 points, 36 points, 49 etc.) test when investigating the square resistance homogeneity, owing to the test position disunity causes direct personal error, reduce the comparability of data greatly, can not understand current technological level and stability exactly.
Although existence at present can be carried out the full-automatic four point probe tester of multi-point sampler automatically to silicon chip, but this full-automatic four point probe tester adopts the driven by servomotor test probe that silicon chip is tested, be complex structure on the one hand, break down easily and maintenance difficult, be that production cost is very high on the other hand, its price generally is the several times of common four point probe tester price and even tens of times, uses this full-automatic four point probe detection instrument to be unfavorable for that the crystal silicon solar energy battery industry controls cost.
Summary of the invention
The object of the present invention is to provide a kind of method of testing and equipment of square resistance of silicon chip, can solve silicon chip is carried out square resistance when test because the frictional dissipation problem that mobile silicon chip causes, and during test silicon wafer because the artificial test error problem that causes of difference.
In order to address the above problem, on the one hand, the invention provides a kind of method of testing of square resistance of silicon chip, this method comprises the steps:
A. silicon slice under test is placed on the support board described silicon slice under test and described support board relative fixed;
B. moving described support board makes test probe aim at tested point on the described silicon slice under test;
C. described test probe contacts described tested point and carries out the square resistance test.
On the other hand, the invention provides a kind of objective table, be used to carry silicon slice under test to carry out the square resistance test, this objective table comprises the support board that is used to carry described silicon slice under test, on described support board, limited block is set, is used for when described support board moves, making described silicon slice under test and this support board relative fixed.
Correspondingly, the present invention also provides a kind of silicon chip resistance meter and a kind of silicon chip resistance meter that comprises above-mentioned objective table that uses above-mentioned method of testing.
The method of testing of the square resistance of silicon chip provided by the invention and equipment efficiently solve the problem that occurs in the prior art, when not moving silicon chip, the multiposition on this silicon chip is carried out the square resistance test with regard to realizing with respect to support board, the reduction of having avoided wearing and tearing silicon chip and having caused this silicon chip photoelectric conversion rate, and by the trigger point is set on support board, guarantee that the different operating personnel can test the test error of having avoided artificial difference to bring to the same position on the silicon chip.Resistance meter production cost provided by the invention is low, simple in structure and be easy to the assembling and the maintenance.
Description of drawings
Fig. 1 a is the plan structure synoptic diagram of a kind of embodiment of objective table of the present invention;
Fig. 1 b is the structural representation of looking up of the objective table shown in Fig. 1 a;
Fig. 2 a is the plan structure synoptic diagram of the another kind of embodiment of objective table of the present invention;
Fig. 2 b is the plan structure synoptic diagram under the user mode of the objective table shown in Fig. 2 a;
Fig. 2 c is the structural representation of looking up of the objective table shown in Fig. 2 a;
Fig. 3 is that the A-A of support board of the objective table shown in Fig. 2 c is to the broken section structural drawing;
Fig. 4 is that the A-A of insulation course 120 in the support board 100 shown in Fig. 3 is to the broken section structural drawing;
Fig. 5 is that the B-B of the objective table shown in Fig. 2 c is to the broken section structural drawing;
Fig. 6 a is the cut-open view of a kind of embodiment of snak link 300;
Fig. 6 b is the decomposition diagram of the snak link 300 shown in Fig. 6 a;
Fig. 7 is that another B-B of the objective table shown in Fig. 5 is to the broken section structural drawing;
Fig. 8 is that the B-B of another embodiment of the objective table shown in Fig. 2 c is to the broken section structural drawing.
Same or analogous Reference numeral is represented same or analogous parts in the accompanying drawing.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiments of the invention are described in detail below in conjunction with accompanying drawing.
Please refer to Fig. 1 a, Fig. 1 a is the plan structure synoptic diagram of a kind of embodiment of objective table of the present invention, as shown in the figure, this objective table comprises support board 100 and limited block 200, limited block 200 is arranged on the support board 100, limited block 200 is made of two mutually perpendicular strip projected parts, when the square resistance test of carrying out silicon chip, limited block 200 is close at the edge of silicon slice under test to be placed, therefore in the time of mobile support board 100, because 200 pairs of silicon slices under test of limited block support silicon slice under test and support board 100 relative fixed.Support board 100 is circular dull and stereotyped, and described two strip projected parts are identical to the distance in the center of circle of this circle flat board.Particularly, the length of limited block 200, height and width can be provided with according to the physical size of silicon slice under test.
Alternatively, in other embodiments, limited block 200 can also be other structures, is set to make silicon slice under test and support board 100 can keep relative fixed to get final product.Support board 100 can be the flat board of other shapes, for example square, regular hexagon etc.
When the square resistance test of carrying out silicon chip, mobile support board 100, (test probe is immovable in the horizontal direction generally speaking to make test probe aim at tested point on the described silicon slice under test, as if being lain in a horizontal plane on the support board 100, tests described silicon slice under test, then mobile support board 100 make described tested point place on the described test probe vertical direction under, can realize that described test probe aims at this tested point), controlling this test probe then contacts described tested point and carries out the square resistance test, if more than one of described tested point, repeat mobile support board 100 and carry out above-mentioned testing procedure and finish until all tested points tests.
The benefit of this embodiment is to have avoided mobile silicon slice under test to test, thereby overcome wear problems.
Further, in order to eliminate the test error that personnel's difference is brought, in conjunction with the objective table embodiment shown in Fig. 1 a, some improvement are carried out in bottom at this objective table, please refer to Fig. 1 b, and Fig. 1 b is the structural representation of looking up of the objective table shown in Fig. 1 a, as shown in the figure, support board 100 is circular dull and stereotyped, and the one side that limited block 200 is not set of this flat board is provided with pit 140, and the position of pit 140 is by the determining positions of the tested point of described silicon slice under test.In the present embodiment, the tested point of silicon slice under test has 9, on this silicon slice under test, is 3 * 3 square matrix shape and arranges, so the spread geometry of pit 140 also is set to 3 * 3 square matrixes, and with pit 140 be arranged on its corresponding tested point under.In this embodiment, pit 140 carries out such layout makes 140 to play the effect of trigger point, particularly, suitable mechanical flip flop equipment or photoelectric trigger device can be set in pit 140, in the process of mobile support board 100, the motion of this support board 100 is triggered described mechanical flip flop equipment or photoelectric trigger device, then can excite following three kinds of processing: first, support board 100 is by locking reversibly and can't continue to move, this moment test probe aim at current pit 140 pairing tested points (be test probe be positioned at this tested point directly over); Second, connect the circuit of loudspeaker (for example electronic impulse acoustical generator), this loudspeaker sends prompt tone (for example buzzing etc. is operated the sound that personnel hear easily), or connection light source (for example LED) circuit, this light source sends flash of light (or other are operated the illumination mode that personnel see easily) clocklike, stops mobile support board 100 with alert; The 3rd, the motion circuit of connection test probe directly presses down to contact the tested point on described silicon slice under test surface test probe.If excite above-mentioned processing, described test probe to aim at tested point or contact measured point, therefore can directly carry out the test of the square resistance of silicon slice under test.
Alternatively, can determine the motion track of support board 100 with orbital groove 130, as described in Figure, (pit 140 that needs connect can be chosen according to actual conditions to connect a part of pit 140 with the connection groove, can form different orbital groove 130 because choose the connection of different pits 140 usefulness connection groove, and this orbital groove 130 is by test custom or testing requirement decision), all described connection grooves link to each other and form orbital groove 130, a projection is embedded in the orbital groove 130, the size of described projection and shape and orbital groove 130 are complementary, make support board 100 not break away under this protruding situation to move (this projection is static with respect to operating personnel, so support board 100 can move along fixation locus along orbital groove 130 under the effect of this projection) at orbital groove 130.
For technical scheme of the present invention is described better, provide another kind of embodiment so that technique effect of the present invention to be described.The parts of same numeral are same or similar among the parts of mentioning in the following embodiment and Fig. 1 a and Fig. 1 b.
Please refer to Fig. 2 a, Fig. 2 a is the plan structure synoptic diagram of the another kind of embodiment of objective table of the present invention, this objective table can be that the square silicon chip of 125mm carries out the square resistance test for the length of side, can be that the square silicon chip of 156mm carries out the square resistance test also for the test length of side, as shown in the figure, support board 100 is circular dull and stereotyped, and limited block 200 is set on support board 100, and each piece limited block 200 is 78mm with the distance in the center of circle (being the center of support board 100) of described circular flat board.
25 tested points are arranged on 17 tested points and the silicon chip 600 is example to have on the silicon chip 700, because described tested point is arranged with the square matrix shape on silicon chip 700 and 600, for satisfying the test needs, corresponding trigger point is set on support board 100, the arrangement mode of trigger point please refer to Fig. 2 c, Fig. 2 c is the structural representation of looking up of the objective table shown in Fig. 2 a, as shown in the figure, 26 pits 140 (being described trigger point) are set on the bottom surface of support board 100, the arrangement mode of described pit 140 as shown in the figure, wherein 25 pits 140 are arranged with 5 * 5 square matrix shape, above-mentioned 25 pits 140 be positioned at silicon chip 600 tested point under, another pit 140a is positioned under the tested point at silicon chip 700 centers, therefore, the position correspondence of 25 pits 140 on support board 100 bottom surfaces position of 25 tested points on the silicon chip 600, arrangement architecture in conjunction with tested point on the silicon chip 700 is considered, with pit 140a be the matrix of 4 * 4 square pits 140 of geometric center add pit 140a just corresponding (above-mentioned 4 * 4 square pits, 140 matrixes are included in the matrix of described 5 * 5 square pits 140 in the position of 17 tested points on the silicon chip 700, say exactly, with reference to figure 2c, these 4 * 4 square pit, 140 matrixes are the zones, upper left side that are positioned at the matrix of this 5 * 5 square pit 140), and its pits 140a correspondence is the tested point at silicon chip 700 centers.
In one embodiment of the invention, the diameter of pit 140 equals the width of orbital groove 130, is 5mm, and the distance between two pit 140 centers of circle is 31mm.In other embodiments of the invention, the distance between the width of the diameter of pit 140, orbital groove 130, two pit 140 centers of circle can be determined according to the specification of actual measurement silicon chip.
In order to describe the structure of pit 140 and orbital groove 130 in detail, please refer to Fig. 3, Fig. 3 be the A-A of support board of the objective table shown in Fig. 2 c to the broken section structural drawing, wherein support board 100 along A-A to analysing and observe.As shown in the figure, objective table comprises support board 100 and the limited block of being made up of conductive layer 110 and insulation course 120 200, and conductive layer 110 is made by conductive material.Pit 140 and orbital groove 130 are arranged in the insulation course 120, in conjunction with Fig. 4 reference, Fig. 4 is that the A-A of insulation course 120 in the support board 100 shown in Fig. 3 is to the broken section structural drawing, as shown in the figure, pit 140 is that spheroid part 141 and column part 142 stacks form, and spheroid part 141 has the diameter that equates with column part 142.The degree of depth of pit 140 equals the height and the spheroid part 141 height sums of column part 142, because the thickness of the degree of depth of pit 140 greater than insulation course 120 is set, be the height of column part 142 and spheroid part 141 height sums thickness, make the top of spheroid part 141 penetrate insulation course 120 (promptly on insulation course 120 closes on the face of spheroid part 141, forming an aperture) greater than insulation course 120.
Preferably, spheroid part 141 be hemisphere, so the radius sum of the height of column part 142 and this hemisphere is greater than the thickness of insulation course 120.(pit 140 that needs connect can be chosen according to actual conditions to connect a part in described 26 pits 140 with the connection groove, can form different orbital groove 130 because choose the connection of different pits 140 usefulness connection groove, and this orbital groove 130 is by test custom and testing requirement decision), the width of described connection groove equals the diameter of column part 142, and all described connection grooves link to each other and form orbital groove 130.With reference to figure 5, Fig. 5 is that the B-B of the objective table shown in Fig. 2 c is to the broken section structural drawing, wherein, the degree of depth of orbital groove 130 is more than or equal to the degree of depth of column part 142, but thickness less than insulation course 120, therefore pit 140 and orbital groove 130 partial stacks are a part of in orbital groove 130 outsides (as shown in the figure) but the spheroid part 141 of pit 140 has at least.After carrying out above-mentioned the setting, conductive layer 110 and insulation course 120 be bonded together by bonding agent forms one (also can be connected to form one by other modes, for example use screw connection etc.).Alternatively, the diameter of conductive layer 110 and insulation course 120 and thickness can determine that those skilled in the art can determine above-mentioned parameter at an easy rate according to the needs of actual measurement.
When silicon slice under test is silicon chip 700, there is a part (other pits 140 that do not comprise described 4 * 4 square pits, 140 matrixes in the matrix of described 5 * 5 square pits 140) in the pit 140 to exceed the measurement range of silicon chip 700, uses rubber hemisphere filling ball body portion 141 with the size match of the semi-spherical shape of spheroid part 141; When silicon slice under test was silicon chip 600, the spheroid part 141 of filling pit 140a with described rubber hemisphere got final product.
In addition, as shown in Figure 5, objective table is except also comprising snak link 300 and base 400, in certain embodiments, one independent base 400 can be set, use if objective table of the present invention directly is placed on the existing four point probe tester, then with the base of described four point probe tester as base 400.One end of snak link 300 and base 400 relative fixed, the other end is directed in the groove 130.
Particularly, the structure of snak link 300 is with reference to figure 6a and Fig. 6 b, and Fig. 6 a is the cut-open view of a kind of embodiment of snak link 300, and Fig. 6 b is the decomposition diagram of the snak link 300 shown in Fig. 6 a.With reference to figure 6a and Fig. 6 b, snak link 300 comprises place kick 310, spring 320 and housing 330, wherein, housing 330 is the right cylinder of hollow, place kick 310 and spring 320 are set in the chamber within it, this cylindrical diameter is slightly less than the diameter of column part 142, makes housing 330 to be admitted by orbital groove 130 and pit 140.Housing 330 1 ends and base 400 relative fixed (being snak link 300 and base 400 relative fixed), the other end is provided with opening 340, the diameter of this opening 340 is less than the diameter of place kick 310, and place kick 310 can be exposed a part to housing 330 outsides at least by this opening 340, the bottom of place kick 310 is provided with spring 320, one end resiliency supported place kick 310 of spring 320, the other end is near the bottom surface or the base 400 (i.e. this other end and housing 330 relative fixed) of living housing 330.The diameter of described place kick 310 is greater than the internal diameter of spring 320 internal diameter less than housing 330, and place kick 310 and spring 320 are on the same axial line substantially, place kick 310 compression springs 320 make its deformation, so place kick 310 is withstood on the top of housing 330 by the elastic force of spring 320.
When applied pressure in the place kick 310 greater than spring 320 be applied to elastic force in the place kick 310 time, place kick 310 moves down and compression spring, the part of exposing housing 330 outsides along with place kick 310 reduces gradually, and place kick 310 progresses into housing 330 inside.If remove the pressure that is applied in the place kick 310, the top of housing 330 is pushed up in place kick 310 again by spring 320, and some is exposed at housing 330 outsides.
With the circuit breaker that the control test probe moves down perpendicular to silicon chip surface, its end that opens circuit is electrically connected with conductive layer 110, and the other end is electrically connected with spring 320.Place kick 310 and spring 320 are all made (for example metal) by conductive material, the purpose of carrying out above-mentioned arrangement is, if place kick 310 contacts to conductive layer, then be switched on perpendicular to the circuit that silicon chip surface moves down by conductive layer 110, the place kick 310 of conduction and spring 320 threes' touch controls test probe.
The degree of depth that length that place kick 310 exposed portions serve add upper shell 330 is equal to or greater than pit 140 is set, makes snak link 300 partially or completely enter pit 140 back place kick and can touch conductive layer 110 by the aperture of pit 140 bottoms.Preferably, support board 100 is close to base 400 placements, and the cylindrical height of housing 330 equals the degree of depth of orbital groove 130, and place kick 310 its parts of exposing housing 330 that withstood on housing 330 tops by spring 320 can be touched conductive layer 110.
Carry out reference in conjunction with Fig. 5 and Fig. 7, Fig. 7 is that another B-B of the objective table shown in Fig. 5 is to the broken section structural drawing, as shown in Figure 5, the end that snak link 300 closes on place kick 310 places orbital groove 130, and place kick 310 this moment is subjected to orbital groove 130 and is squeezed to small part and bounces back in the housing 330.Move horizontally support board 100 along arrow A 1 direction, in snak link 300 is close to orbital groove 130 when mobile, because place kick 310 is subjected to the extruding of orbital groove 130 inwalls all the time, spring 320 is compressed all the time, and place kick 310 is contact insulation layer 120 all the time, and therefore described control test probe disconnects all the time perpendicular to the circuit that silicon chip surface moves down.As shown in Figure 7, when mobile support board 100 makes snak link 300 enter pit 140, because the degree of depth of pit 140 is greater than the degree of depth of orbital groove 130, orbital groove 130 can not continue to push place kick 310, the pressure that is applied in the place kick 310 disappears, spring 320 is unfolded, the elastic force of spring 320 is upwards ejected place kick 310 and exposes a part, this part of exposing arrives pit 140 bottoms, and the aperture contact conductive layer 110 by pit 140 bottoms, therefore control the circuit that the vertical silicon chip surface of test probe moves down and be switched on, the tested point that test probe presses down on the contact measured silicon chip automatically carries out the square resistance test.After finishing the test of this tested point, make described test probe leave the surface (for example the operational testing probe moves straight up) of silicon slice under test, continue then to move support board 100, just can finish the test of all tested points on the silicon slice under test along orbital groove 130.
Need explanation to be, pit 140 and the snak link 300 described in the embodiment of front are a preferred embodiment of the present invention, in other some embodiment of the present invention, pit 140 and snak link 300 can be set to any suitable shape and size, when only needing to make in snak link 300 moves to pit 140, can be got final product by the aperture contact conductive layer 110 of pit bottom by the place kick 310 of spring 320 jack-up.Therefore, the shape and size of the various piece of pit 140 and snak link 300 are not limited to the shape and size described in the embodiment of the invention.
Optionally, when the aperture contact conductive layer 110 of pit 140 bottoms is passed through in place kick 310, also can carry out following processing: first kind, when place kick 310 touches conductive layer 110, control loudspeaker sends continuous prompt tone (for example continual buzzing), in case along with place kick 310 is moved, make place kick 310 separate with conductive layer 110, then loudspeaker stops to send prompt tone, therefore realized making loudspeaker send continuous prompt tone in controllable position, the handled easily personnel position tested point in the process of mobile support board 100; Second kind, when place kick 310 touches conductive layer 110, connect the power supply of LED, make LED send flash of light clocklike, the handled easily personnel position tested point in the process of mobile support board 100; The third, when place kick 310 touches conductive layer 110, the enable position locking device makes support board 100 continue motion (promptly being that silicon slice under test can't continue motion with respect to probe) with respect to probe, therefore can be implemented in the fixed position test probe and can aim at tested point at fixed position dynamic resistance support board 100.Described position local device can be realized by the device of existing suitable construction.
The method that the circuit that also can adopt other triggering control test probes to move down perpendicular to silicon chip surface is connected, please refer to Fig. 8, Fig. 8 is that the B-B of another embodiment of the objective table shown in Fig. 2 c is to the broken section structural drawing, in pit 140 bottoms optical signal receiver 501 is set, optical signal transmitter 502 is set on base 400, optical signal transmitter 502 can be admitted by orbital groove 130, and moves along orbital groove 130.Optical signal transmitter 502 sends a branch of straight line light signal L incessantly, when optical signal transmitter is mobile in orbital groove 130, optical signal receiver 501 does not receive any light signal, and therefore described control test probe keeps disconnection perpendicular to the circuit that silicon chip surface moves down; In the time of under optical signal transmitter 502 moves to pit 140, signal receiver 501 receives light signal L, described control test probe is connected perpendicular to the circuit that silicon chip surface moves down, and the tested point that test probe presses down on the contact measured silicon chip automatically carries out the square resistance test.Repeat above-mentioned steps and can finish the test of all tested points on the silicon slice under test.Alternatively, when signal receiver 501 receives light signal L, can also carry out following processing: first kind, when signal receiver 501 receives light signal L, control loudspeaker sends continuous prompt tone, in case change along with optical signal transmitter 502 moves the light path that causes light signal L, signal receiver 501 no longer receives light signal L, then loudspeaker stops to send prompt tone, therefore realized making loudspeaker send continuous prompt tone (for example continual buzzing) in controllable position, the handled easily personnel position tested point in the process of mobile support board 100; Second kind, when signal receiver 501 receives light signal L, connect the power supply of LED, make LED send flash of light clocklike, the handled easily personnel position tested point in the process of mobile support board 100; The third, when signal receiver 501 receives light signal L, the enable position locking device makes support board 100 continue motion (promptly being that silicon slice under test can't continue motion with respect to probe) with respect to probe, therefore can be implemented in the fixed position test probe and can aim at tested point at fixed position dynamic resistance support board 100.Described position local device can be realized by the device of existing suitable construction.
Above-mentioned embodiment has exemplified the situation that has 3 * 3,4 * 4,5 * 5 tested points on the silicon slice under test respectively, when carrying out the square resistance uniformity test of silicon chip, may need to carry out 8 * 8 more tests of tested point such as tested point, therefore according to test needs and tested point number, n * n pit (n is the integer greater than 2) can be set on support board 100.
Need to prove; the test probe of mentioning in the above-mentioned embodiment is the probe of four probe method test square resistance; use existing four point probe tester to carry out the square resistance test of silicon chip, and use the auxiliary square resistance test of carrying out silicon chip of objective table provided by the invention all to belong to the scope of protection of present invention in conjunction with method provided by the invention.
Implement above-mentioned embodiment, when not moving silicon chip, the multiposition on this silicon chip is carried out the square resistance test with regard to realizing with respect to objective table, the reduction of having avoided wearing and tearing silicon chip and having caused this silicon chip photoelectric conversion rate, and by the trigger point is set on support board, guarantee that the different operating personnel can test the test error of having avoided artificial difference to bring to the same position on the silicon chip.Can also realize the square resistance uniformity test of silicon chip on this support board easily.Resistance meter production cost provided by the invention is low, simple in structure and be easy to the assembling and the maintenance.
Above disclosed only is a kind of preferred embodiment of the present invention, can not limit the present invention's interest field certainly with this, and therefore the equivalent variations of doing according to claim of the present invention still belongs to the scope that the present invention is contained.
Claims (21)
1. the method for testing of the square resistance of a silicon chip is characterized in that, this method comprises:
A. silicon slice under test is placed on the support board described silicon slice under test and described support board relative fixed;
B. moving described support board makes test probe aim at tested point on the described silicon slice under test;
C. described test probe contacts described tested point and carries out the square resistance test.
2. method according to claim 1 is characterized in that step b comprises:
According to described tested point corresponding trigger point is set respectively;
Move described support board;
In the process that moves described support board,, then reversibly lock this support board, and make described test probe aim at the tested point of described trigger point correspondence if activate described trigger point.
3. method according to claim 1 is characterized in that step b comprises:
According to described tested point corresponding trigger point is set respectively;
Move described support board;
In the process that moves described support board,, then send cue if activate described trigger point;
Stop to move described support board so that described test probe is aimed at the tested point of described this trigger point correspondence.
4. method according to claim 1 is characterized in that step b comprises:
According to described tested point corresponding trigger point is set respectively;
Move described support board;
If activate described trigger point, then connect the control circuit of described test probe in the process that moves described support board, described control circuit is switched on the back described test probe of control and contacts the test point of this trigger point correspondence and carry out the square resistance test.
5. method according to claim 4 is characterized in that:
Described control circuit is the control circuit that the described test probe of control is in vertical motion.
6. according to each described method of claim 2 to 5, it is characterized in that, describedly in moving the process of described support board, comprise if activate described trigger point:
Move described support board and trigger structure to excite the physical construction that is arranged on place, described trigger point; Or
Move described support board and trigger structure to excite the photosignal that is arranged on place, described trigger point.
7. method according to claim 6 is characterized in that:
Limit the motion track of described support board with orbital groove.
8. method according to claim 7 is characterized in that:
Be arranged in described trigger point on the described support board and be in described tested point under.
9. method according to claim 8 is characterized in that:
Described orbital groove travels through described trigger point.
10. method according to claim 9 is characterized in that:
Described silicon slice under test is that the length of side is the square silicon chip of 125mm or 156mm.
11. method according to claim 10 is characterized in that:
The spread geometry of described tested point on described silicon slice under test is n * n square matrix, and described n is the integer greater than 2.
12. method according to claim 9 is characterized in that:
Described test probe is the test probe that is applicable to four probe method test square resistance.
13. an objective table is used to carry silicon slice under test to carry out the square resistance test, it is characterized in that:
This objective table comprises the support board (100) that is used to carry described silicon slice under test, and limited block (200) is set on described support board (100), is used for making when described support board (100) is mobile described silicon slice under test and this support board (100) relative fixed.
14. objective table according to claim 13 is characterized in that:
This objective table also comprises snak link (300) and base (400), described snak link (300) and described base (400) relative fixed;
Described snak link (300) comprises place kick (310), spring (320) and housing (330), described housing (330) and described base (400) relative fixed, arrange described place kick (310) and spring (320) in the cavity of described housing (330) inside, make the described place kick of an end resiliency supported (310) of this spring (320);
Orbital groove (130) and pit (140) are set on the bottom surface of described support board (100), described pit (140) is distributed on the described orbital groove (130) according to predetermined rule, the end that described snak link (300) closes on described place kick (310) places in the described orbital groove (130), and, contact with described orbital groove (130) or pit (140) in place kick described in the moving process (310) along with moving with this orbital groove (130) of described support board (100) relatively moves.
15. objective table according to claim 14 is characterized in that:
The diameter of described place kick (310) is greater than the internal diameter of spring (320), this place kick (310) is set and spring (320) is on the same axial line;
Described pit (140) is the pit that semisphere and the stack of the cylinder bodily form form.
16. objective table according to claim 15 is characterized in that:
Described support board (100) comprises conductive layer (110) and insulation course (120), and described orbital groove (130) and pit (140) are arranged on the insulation course (120), and this pit (140) bottom has opening;
Described place kick (310) and spring (320) are made by conductive material, and described snak link (300) moves to described pit (140) when interior, and described place kick (310) contacts and form short circuit by described opening with conductive layer (110);
The end that described conductive layer (110) and spring (320) close on described base (400) all inserts in the test probe control circuit, when described place kick (310) contacts the formation short circuit with this conductive layer (110), connect described test probe control circuit and contact described silicon slice under test and carry out the square resistance test with the control test probe.
17. method according to claim 16 is characterized in that:
Described test probe control circuit is that the described test probe of control vertically presses down to contact the control circuit of described silicon slice under test.
18. objective table according to claim 13 is characterized in that:
This objective table also comprises optical signal receiver (501), optical signal transmitter (502) and base (400), described optical signal receiver (501) and described base (400) relative fixed;
Orbital groove (130) and pit (140) are set on the bottom surface of described support board (100), described pit (140) is evenly distributed on the described orbital groove (130), described optical signal receiver (501) places described pit (140) bottom, described optical signal transmitter (502) places in the described orbital groove (130), and along with moving with this orbital groove (130) of described support board (100) relatively moves;
When described optical signal transmitter (502) moves under the described optical signal receiver (501), this optical signal receiver (501) receives the light signal that described optical signal transmitter (502) sends, prompt facility sends cue subsequently, or the test probe control circuit is controlled this test probe contact measured silicon chip and carried out the square resistance test.
19., it is characterized in that according to each described objective table of claim 14 to 18:
Described silicon slice under test is the square silicon chip; Described support board (100) is circular;
Described limited block (200) is close to two adjacent limits of described silicon slice under test, and to make the distance in the center of circle of these two adjacent limits and described support board be 78mm;
Described pit (140) is 25, and is arranged in 5 * 5 square matrix shape on described support board (100), and the geometric center of this square matrix overlaps with the center of circle of described support board (100).
20. a silicon chip resistance meter comprises test probe, test probe control circuit and support board, it is characterized in that: this silicon chip resistance meter has used as each described method of claim 1 to 12 when the square resistance test of carrying out silicon slice under test.
21. a silicon chip resistance meter comprises test probe and test probe control circuit, it is characterized in that: this silicon chip resistance meter comprises as each described objective table of claim 13 to 19.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010548636.1A CN102200552B (en) | 2010-11-17 | 2010-11-17 | Method and equipment for testing square resistor of silicon sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010548636.1A CN102200552B (en) | 2010-11-17 | 2010-11-17 | Method and equipment for testing square resistor of silicon sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102200552A true CN102200552A (en) | 2011-09-28 |
| CN102200552B CN102200552B (en) | 2014-07-09 |
Family
ID=44661392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010548636.1A Active CN102200552B (en) | 2010-11-17 | 2010-11-17 | Method and equipment for testing square resistor of silicon sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102200552B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522354A (en) * | 2012-01-12 | 2012-06-27 | 中国科学院微电子研究所 | Method and device for extracting square resistances of interconnection lines |
| CN102539919A (en) * | 2011-12-19 | 2012-07-04 | 中利腾晖光伏科技有限公司 | Method for selectively testing diffused sheet resistance |
| CN102621390A (en) * | 2012-03-31 | 2012-08-01 | 上海宏力半导体制造有限公司 | Method and device for measuring square resistance |
| CN103018564A (en) * | 2013-01-05 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Method for testing diffused layer resistance of finished cell |
| CN103235185A (en) * | 2013-04-18 | 2013-08-07 | 常州天合光能有限公司 | Method for testing sheet resistance in preparation process of selective transmission electrode battery |
| CN105182081A (en) * | 2015-09-29 | 2015-12-23 | 中国科学院上海硅酸盐研究所 | Method for testing square resistance of sheet material |
| CN105203847A (en) * | 2015-09-29 | 2015-12-30 | 中国科学院上海硅酸盐研究所 | Method for measuring thin layer material square resistance and connection point contact resistance |
| CN106291111A (en) * | 2016-08-12 | 2017-01-04 | 深圳市拓普微科技开发有限公司 | A kind of conductive adhesive tape tester |
| CN106684010A (en) * | 2016-12-28 | 2017-05-17 | 西安电子科技大学 | Method for testing square resistance in active area based on vertical test pattern |
| CN106684011A (en) * | 2016-12-28 | 2017-05-17 | 西安电子科技大学 | Method for testing square resistance of ohmic contact region |
| CN106783661A (en) * | 2016-12-28 | 2017-05-31 | 西安电子科技大学 | Ohmic contact regions square resistance method of testing based on vertical checkout figure |
| CN109411382A (en) * | 2018-10-25 | 2019-03-01 | 江苏彩虹永能新能源有限公司 | Silicon wafer voltage check device after a kind of diffusion |
| CN110310900A (en) * | 2019-07-22 | 2019-10-08 | 上海华力集成电路制造有限公司 | Nickel metal silicide generates monitoring method |
| CN110672926A (en) * | 2019-10-24 | 2020-01-10 | 河北工业大学 | Electrical material conductivity measuring device and measuring system suitable for different working conditions |
| CN111103460A (en) * | 2018-10-25 | 2020-05-05 | 株洲中车时代电气股份有限公司 | Method for improving accuracy of four-probe RS test |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987365A (en) * | 1989-04-28 | 1991-01-22 | Hewlett-Packard Company | Method and apparatus for testing integrated circuits |
| US20080143354A1 (en) * | 2006-12-15 | 2008-06-19 | Chen James T C | System and methods of measuring semiconductor sheet resistivity and junction leakage current |
| CN101413972A (en) * | 2008-11-27 | 2009-04-22 | 天津大学 | System and method for testing electric resistivity of thin film thermoelectricity material |
| CN101587149A (en) * | 2008-05-23 | 2009-11-25 | 深圳富泰宏精密工业有限公司 | Impedance test device |
| JP2010165819A (en) * | 2009-01-15 | 2010-07-29 | Renesas Electronics Corp | Apparatus and method for testing semiconductor integrated circuits |
| CN101872799A (en) * | 2009-04-21 | 2010-10-27 | 上海太阳能科技有限公司 | Method for improving diffusion uniformity of solar battery |
-
2010
- 2010-11-17 CN CN201010548636.1A patent/CN102200552B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987365A (en) * | 1989-04-28 | 1991-01-22 | Hewlett-Packard Company | Method and apparatus for testing integrated circuits |
| US20080143354A1 (en) * | 2006-12-15 | 2008-06-19 | Chen James T C | System and methods of measuring semiconductor sheet resistivity and junction leakage current |
| CN101587149A (en) * | 2008-05-23 | 2009-11-25 | 深圳富泰宏精密工业有限公司 | Impedance test device |
| CN101413972A (en) * | 2008-11-27 | 2009-04-22 | 天津大学 | System and method for testing electric resistivity of thin film thermoelectricity material |
| JP2010165819A (en) * | 2009-01-15 | 2010-07-29 | Renesas Electronics Corp | Apparatus and method for testing semiconductor integrated circuits |
| CN101872799A (en) * | 2009-04-21 | 2010-10-27 | 上海太阳能科技有限公司 | Method for improving diffusion uniformity of solar battery |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102539919A (en) * | 2011-12-19 | 2012-07-04 | 中利腾晖光伏科技有限公司 | Method for selectively testing diffused sheet resistance |
| CN102522354A (en) * | 2012-01-12 | 2012-06-27 | 中国科学院微电子研究所 | Method and device for extracting square resistances of interconnection lines |
| CN102522354B (en) * | 2012-01-12 | 2014-02-19 | 中国科学院微电子研究所 | Method and device for extracting square resistances of interconnection lines |
| CN102621390A (en) * | 2012-03-31 | 2012-08-01 | 上海宏力半导体制造有限公司 | Method and device for measuring square resistance |
| CN102621390B (en) * | 2012-03-31 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | Square resistance measurement method and Square resistance measurement device |
| CN103018564A (en) * | 2013-01-05 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Method for testing diffused layer resistance of finished cell |
| CN103235185A (en) * | 2013-04-18 | 2013-08-07 | 常州天合光能有限公司 | Method for testing sheet resistance in preparation process of selective transmission electrode battery |
| CN103235185B (en) * | 2013-04-18 | 2015-09-09 | 常州天合光能有限公司 | For the method for the test sheet resistance in selectivity emitting electrode cell manufacturing process |
| CN105182081A (en) * | 2015-09-29 | 2015-12-23 | 中国科学院上海硅酸盐研究所 | Method for testing square resistance of sheet material |
| CN105203847A (en) * | 2015-09-29 | 2015-12-30 | 中国科学院上海硅酸盐研究所 | Method for measuring thin layer material square resistance and connection point contact resistance |
| CN105182081B (en) * | 2015-09-29 | 2018-10-02 | 中国科学院上海硅酸盐研究所 | A kind of layer material square resistance test method |
| CN106291111A (en) * | 2016-08-12 | 2017-01-04 | 深圳市拓普微科技开发有限公司 | A kind of conductive adhesive tape tester |
| CN106684011A (en) * | 2016-12-28 | 2017-05-17 | 西安电子科技大学 | Method for testing square resistance of ohmic contact region |
| CN106783661A (en) * | 2016-12-28 | 2017-05-31 | 西安电子科技大学 | Ohmic contact regions square resistance method of testing based on vertical checkout figure |
| CN106684010A (en) * | 2016-12-28 | 2017-05-17 | 西安电子科技大学 | Method for testing square resistance in active area based on vertical test pattern |
| CN106783661B (en) * | 2016-12-28 | 2019-04-23 | 西安电子科技大学 | Ohmic contact regions square resistance test method based on vertical checkout figure |
| CN106684011B (en) * | 2016-12-28 | 2019-04-23 | 西安电子科技大学 | The method for testing ohmic contact regions square resistance |
| CN106684010B (en) * | 2016-12-28 | 2019-06-21 | 西安电子科技大学 | Active area square resistance test method based on vertical checkout figure |
| CN109411382A (en) * | 2018-10-25 | 2019-03-01 | 江苏彩虹永能新能源有限公司 | Silicon wafer voltage check device after a kind of diffusion |
| CN111103460A (en) * | 2018-10-25 | 2020-05-05 | 株洲中车时代电气股份有限公司 | Method for improving accuracy of four-probe RS test |
| CN111103460B (en) * | 2018-10-25 | 2021-03-16 | 株洲中车时代半导体有限公司 | Method for improving accuracy of four-probe RS test |
| CN110310900A (en) * | 2019-07-22 | 2019-10-08 | 上海华力集成电路制造有限公司 | Nickel metal silicide generates monitoring method |
| CN110310900B (en) * | 2019-07-22 | 2021-12-07 | 上海华力集成电路制造有限公司 | Nickel metal silicide generation monitoring method |
| CN110672926A (en) * | 2019-10-24 | 2020-01-10 | 河北工业大学 | Electrical material conductivity measuring device and measuring system suitable for different working conditions |
| CN110672926B (en) * | 2019-10-24 | 2021-08-10 | 河北工业大学 | Electrical material conductivity measuring device and measuring system suitable for different working conditions |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102200552B (en) | 2014-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102200552B (en) | Method and equipment for testing square resistor of silicon sheet | |
| CN102914673B (en) | Probe testing device | |
| US8638118B2 (en) | Wafer inspection device | |
| ATE373831T1 (en) | PLATE-SHAPED PROBE, PROCESS FOR MANUFACTURING IT AND ITS USE | |
| WO2006073736A3 (en) | Probe head arrays | |
| JP2011099746A (en) | Sample stand for measuring solar battery cell | |
| CN104280573A (en) | Electric connecting apparatus | |
| CN100575862C (en) | A kind of apparatus and method of measuring surface smoothness of double plate in fuel cell | |
| JP4625941B2 (en) | Solar cell performance evaluation system | |
| CN101726673A (en) | Spot measurement device | |
| CN104931741B (en) | Microprobe and preparation method thereof | |
| CN102800604A (en) | Method for obtaining parameters of ion implantation technology, monitoring wafer and manufacturing method thereof | |
| CN207280371U (en) | A kind of accumulator terminal taper detector | |
| CN210982704U (en) | Magnetism detection tool and magnetism detector | |
| JP2006107789A5 (en) | ||
| CN112904205A (en) | Fuel cell measuring device | |
| CN201725010U (en) | Multifunctional crystal grain spot measurement circuit of spot measurement machine and multifunctional spot measurement machine | |
| CN108682632A (en) | Semiconductor detection and its operating method | |
| CN211718353U (en) | Multi-step shrinkage probe | |
| TW200642175A (en) | Method of testing ball grid array packed device in real system and test socket assembly therefor | |
| CN210015199U (en) | High-frequency test seat for QFN chip | |
| CN206650629U (en) | A kind of MWT solar cell tests device | |
| CN201757775U (en) | Dual-purpose conversion structure of point measuring machine and dual-purpose point measuring machine thereof | |
| CN207689572U (en) | A kind of resistance monitor of mobile fingerprint ring | |
| CN206248725U (en) | A kind of equipment of quick test product resistance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220616 Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 310053 No. 1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee before: Zhengtai Xinneng Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |