CN102200552B - Method and equipment for testing square resistor of silicon sheet - Google Patents
Method and equipment for testing square resistor of silicon sheet Download PDFInfo
- Publication number
- CN102200552B CN102200552B CN201010548636.1A CN201010548636A CN102200552B CN 102200552 B CN102200552 B CN 102200552B CN 201010548636 A CN201010548636 A CN 201010548636A CN 102200552 B CN102200552 B CN 102200552B
- Authority
- CN
- China
- Prior art keywords
- support board
- test
- point
- silicon chip
- trigger point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 168
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 148
- 239000010703 silicon Substances 0.000 title claims abstract description 148
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000000523 sample Substances 0.000 claims abstract description 74
- 230000008569 process Effects 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000010998 test method Methods 0.000 claims description 9
- 150000003376 silicon Chemical class 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000005299 abrasion Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 241000599985 Beijerinckia mobilis Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention provides a method for testing a square resistor of a silicon sheet. The method comprises the following steps of: placing the silicon sheet to be tested on an object-carrying board, wherein the silicon sheet to be tested and the object-carrying board are fixed relatively; moving the object-carrying board so that a test probe is aligned to a point to be tested on the silicon sheet to be tested; and contacting the test probe and the point to be tested so as to test the square resistor. Correspondingly, the invention also provides an object-carrying table for carrying the silicon sheet and testing the square resistor, and a square resistor tester. By the method and the equipment for testing the square resistor of the silicon sheet, reduction of the photoelectric conversion efficiency of the silicon sheet due to abrasion of the silicon sheet can be avoided; furthermore, a trigger point is arranged on the object-carrying board so that different operators can test the same position on the silicon sheet; and test error due to operation of different operators can be avoided.
Description
Technical field
The present invention relates to silicon chip of solar cell and manufacture field, relate in particular to a kind of method of testing and equipment of square resistance of silicon chip.
Background technology
In conventional at present solar cell fabrication process flow process, diffusion technique is one of committed step, forms " heart " part---the PN junction of crystal silicon solar energy battery in diffusion process.In this technological process, silicon chip surface can form one deck impurity diffusion layer with substrate conductivity type opposite, conventional crystal silicon solar energy battery generally passes through phosphorus doping at P type (boron-containing impurities) silicon chip surface, form one deck N-type impurity layer at silicon chip surface, like this, just formed PN junction at the intersection of two kinds of conduction types.
Due to square resistance R
□=1/Nq μ * x
j, wherein, the impurity concentration that N is silicon chip surface, q is electron charge, μ is carrier mobility, x
jfor the degree of depth of PN junction.So, by the measurement of square resistance, just can indirect reaction go out the impurity concentration of silicon chip surface and the junction depth situation of PN junction, and, can judge whether current diffusion technique meets the requirement of desired value by measured value, whether stablely produce.Therefore,, in order to monitor two key parameter μ and the q after diffusion, often need to measure the square resistance of silicon chip after diffusion.All generally by four point probe tester, square resistance to be tested at present.At present, in the time that silicon chip after spreading is carried out to Square resistance measurement, although the four point probe tester adopting belongs to semi-automatic type, just realized when probe moves in the vertical direction by key control, its probe and test board are all fixed.Now, domestic nearly all crystal silicon solar energy battery production firm and scientific research institutions etc., all adopt four point probe tester to carry out the measurement of square resistance.But existing four point probe tester, due to the inherent characteristics of its structure and test aspect, has determined that it has a lot of defects and deficiency in measuring process:
The test probe of existing four point probe tester and test platform (placing the platform of silicon slice under test) are all fixed.Therefore, in the time that silicon chip diverse location is carried out to dependence test, silicon chip just need to constantly move around, will bring so following problem: first, friction between silicon chip and test platform can wear and tear pyramid and the PN junction of silicon chip surface, can cause certain loss to the conversion efficiency of battery like this, make after solar battery sheet through the silicon chip of such test, the absolute value of its photoelectric transformation efficiency can be than low 2% left and right of battery of making without the silicon chip of test (silicon chip surface not being caused to friction); Second, in the test process of silicon chip square resistance, need diverse location to test, in the time testing, because pressing down by operating personnel's button, realizes by probe, make like this randomness of test greatly increase, particularly in multiple spot (as 16 points, 25 points, 36 points, 49 etc.) test when investigating square resistance homogeneity, because test position disunity causes direct personal error, greatly reduce the comparability of data, can not understand exactly current technological level and stability.
Although existence at present can be carried out the full-automatic four point probe tester of multi-point sampler automatically to silicon chip, but this full-automatic four point probe tester adopts driven by servomotor test probe to test silicon chip, complex structure on the one hand, easily break down and maintenance difficult, that production cost is very high on the other hand, its price is generally several times and even the decades of times of common four point probe tester price, uses this full-automatic four point probe detection instrument to be unfavorable for that crystal silicon solar energy battery industry controls cost.
Summary of the invention
The object of the present invention is to provide a kind of method of testing and equipment of square resistance of silicon chip, can solve silicon chip is carried out to the frictional dissipation problem that square resistance when test causes due to mobile silicon chip, and the test error problem causing due to artificial difference when test silicon wafer.
In order to address the above problem, on the one hand, the invention provides a kind of method of testing of square resistance of silicon chip, the method comprises the steps:
A. silicon slice under test is placed on support board, described silicon slice under test is relative with described support board fixing;
B. mobile described support board makes test probe aim at the tested point on described silicon slice under test;
C. described test probe contacts described tested point and carries out square resistance test.
On the other hand, the invention provides a kind of objective table, be used for carrying silicon slice under test to carry out square resistance test, this objective table comprises the support board for carrying described silicon slice under test, on described support board, limited block is set, for making described silicon slice under test relative with this support board fixing in the time that described support board moves.
Correspondingly, the present invention also provides a kind of silicon chip resistance meter and a kind of silicon chip resistance meter that comprises above-mentioned objective table that uses above-mentioned method of testing.
The method of testing of the square resistance of silicon chip provided by the invention and equipment efficiently solve the problem occurring in prior art, in not moving silicon chip with respect to support board, with regard to realizing, the upper multiposition of this silicon chip is carried out to square resistance test, the reduction of having avoided wearing and tearing silicon chip and cause this silicon chip photoelectric conversion rate, and by trigger point is set on support board, guarantee that different operating personnel can test the same position on silicon chip, the test error of having avoided artificial difference to bring.Resistance meter production cost provided by the invention is low, simple in structure and be easy to assembling and maintenance.
Brief description of the drawings
Fig. 1 a is the plan structure schematic diagram of a kind of embodiment of objective table of the present invention;
Fig. 1 b is the structural representation of looking up of the objective table shown in Fig. 1 a;
Fig. 2 a is the plan structure schematic diagram of the another kind of embodiment of objective table of the present invention;
Fig. 2 b is the plan structure schematic diagram under the use state of the objective table shown in Fig. 2 a;
Fig. 2 c is the structural representation of looking up of the objective table shown in Fig. 2 a;
Fig. 3 is that the A-A of support board of the objective table shown in Fig. 2 c is to broken section structural drawing;
Fig. 4 is that the A-A of insulation course 120 in the support board 100 shown in Fig. 3 is to broken section structural drawing;
Fig. 5 is that the B-B of the objective table shown in Fig. 2 c is to broken section structural drawing;
Fig. 6 a is the cut-open view of a kind of embodiment of snak link 300;
Fig. 6 b is the decomposition diagram of the snak link 300 shown in Fig. 6 a;
Fig. 7 is that another B-B of the objective table shown in Fig. 5 is to broken section structural drawing;
Fig. 8 is that the B-B of another embodiment of the objective table shown in Fig. 2 c is to broken section structural drawing.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiments of the invention are described in detail.
Please refer to Fig. 1 a, Fig. 1 a is the plan structure schematic diagram of a kind of embodiment of objective table of the present invention, as shown in the figure, this objective table comprises support board 100 and limited block 200, limited block 200 is arranged on support board 100, limited block 200 is made up of two mutually perpendicular strip projected parts, in the time of the square resistance test of carrying out silicon chip, limited block 200 is close to in the edge of silicon slice under test to be placed, therefore when mobile support board 100, because limited block 200 supports silicon slice under test, silicon slice under test is relative with support board 100 fixing.Support board 100 is circular dull and stereotyped, and described two strip projected parts are identical to the distance in the center of circle of this circle flat board.Particularly, the length of limited block 200, height and width can arrange according to the physical size of silicon slice under test.
Alternatively, in other embodiments, limited block 200 can also be other structures, is set to make silicon slice under test and support board 100 can keep relative fixing.Support board 100 can be the flat board of other shapes, such as square, regular hexagon etc.
In the time of the square resistance test of carrying out silicon chip, mobile support board 100, (generally test probe is immovable in the horizontal direction to make test probe aim at tested point on described silicon slice under test, if described silicon slice under test is lain in a horizontal plane on support board 100 and is tested, mobile support board 100 make described tested point be placed in described test probe vertical direction under, can realize described test probe and aim at this tested point), then controlling this test probe contacts described tested point and carries out square resistance test, if more than one of described tested point, repeat mobile support board 100 and carry out above-mentioned testing procedure until all tested points are completed.
The benefit of this embodiment is to have avoided mobile silicon slice under test to test, thereby overcome the problem of wearing and tearing.
Further, the test error bringing in order to eliminate personnel's difference, in conjunction with the objective table embodiment shown in Fig. 1 a, carry out some in the bottom of this objective table and improve, please refer to Fig. 1 b, Fig. 1 b is the structural representation of looking up of the objective table shown in Fig. 1 a, as shown in the figure, support board 100 is circular dull and stereotyped, and the one side that limited block 200 is not set of this flat board is provided with pit 140, and the position of pit 140 is by the determining positions of the tested point of described silicon slice under test.In the present embodiment, the tested point of silicon slice under test has 9, on this silicon slice under test, be 3 × 3 square matrix shape arrange, therefore the spread geometry of pit 140 is also set to 3 × 3 square matrixes, and by pit 140 be arranged on its corresponding tested point under.In this embodiment, pit 140 carries out such layout makes 140 to play the effect of trigger point, particularly, can suitable mechanical flip flop equipment or photoelectric trigger device be set pit 140 is interior, in the process of mobile support board 100, the motion of this support board 100 is triggered described mechanical flip flop equipment or photoelectric trigger device, can excite following three kinds of processing: first, support board 100 by locking reversibly and cannot continue mobile, now test probe aim at the corresponding tested point of current pit 140 (be test probe be positioned at this tested point directly over); Second, connect the circuit of loudspeaker (for example electronic impulse acoustical generator), this loudspeaker sends prompt tone (sound that such as buzzing etc. is easily heard by operating personnel), or connection light source (for example LED) circuit, this light source sends regular flash of light (or other illumination modes of easily being seen by operating personnel), stops mobile support board 100 with alert; The 3rd, the motion circuit of connection test probe, makes test probe directly press down to contact the tested point on described silicon slice under test surface.If excite above-mentioned processing, described test probe has been aimed at tested point or contact measured point, therefore can directly carry out the test of the square resistance of silicon slice under test.
Alternatively, can determine with orbital groove 130 motion track of support board 100, as described in Figure, (pit 140 that needs connect can be chosen according to actual conditions to connect a part of pit 140 by connecting groove, can form different orbital groove 130 because choose the 140 use connecting groove connections of different pits, and this orbital groove 130 is determined by test custom or testing requirement), all described connecting grooves are connected to form orbital groove 130, a projection is embedded in orbital groove 130, the size and shape of described projection and orbital groove 130 match, make support board 100 not depart from this at orbital groove 130 and move that (this projection is static with respect to operating personnel protruding in the situation that, therefore support board 100 can move along fixation locus along orbital groove 130 under this protruding role).
For technical scheme of the present invention is described better, provide another kind of embodiment so that technique effect of the present invention to be described.In the parts of mentioning in following embodiment and Fig. 1 a and Fig. 1 b, the parts of same numeral are same or similar.
Please refer to Fig. 2 a, Fig. 2 a is the plan structure schematic diagram of the another kind of embodiment of objective table of the present invention, the square silicon chip that this objective table can be 125mm for the length of side carries out square resistance test, the square silicon chip that can be also 156mm for the test length of side carries out square resistance test, as shown in the figure, support board 100 is circular dull and stereotyped, limited block 200 is set on support board 100, and each piece limited block 200 is 78mm with the distance in the described circular dull and stereotyped center of circle (being support board 100 center).
Limited block 200 is close to in described silicon slice under test edge to be placed, please refer to Fig. 2 b, Fig. 2 b is the plan structure schematic diagram under the use state of the objective table shown in Fig. 2 a, as shown in the figure, on the support board 100 of this objective table, can place the length of side is the square silicon chip 700 of 125mm, also the square silicon chip 600 that can to place the length of side be 156mm (blocked by silicon chip 700 by a part for silicon chip 600, therefore not shown in the drawings, silicon chip 700 stacks being placed on to silicon chip 600 tops is herein position relationships of placing in order to contrast both, when actual test square resistance, place separately silicon chip 700 or silicon chip 600, to obtain test result accurately).
There are 25 tested points as example to have on silicon chip 700 on 17 tested points and silicon chip 600, because described tested point is arranged with square matrix shape on silicon chip 700 and 600, for meeting test needs, corresponding trigger point is set on support board 100, the arrangement mode of trigger point please refer to Fig. 2 c, Fig. 2 c is the structural representation of looking up of the objective table shown in Fig. 2 a, as shown in the figure, 26 pits 140 (being described trigger point) are set on the bottom surface of support board 100, the arrangement mode of described pit 140 as shown in the figure, wherein 25 pits 140 are arranged with 5 × 5 square matrix shape, above-mentioned 25 pits 140 be positioned at silicon chip 600 tested point under, another pit 140a is positioned under the tested point at silicon chip 700 centers, therefore, the position correspondence of 25 pits 140 on support board 100 bottom surfaces the position of 25 tested points on silicon chip 600, arrangement architecture in conjunction with tested point on silicon chip 700 is considered, the matrix of 4 × 4 square pits 140 taking pit 140a as geometric center add pit 140a just corresponding (above-mentioned 4 × 4 square pit 140 matrixes are included in the matrix of described 5 × 5 square pits 140 position of 17 tested points on silicon chip 700, say exactly, with reference to figure 2c, these 4 × 4 square pit, 140 matrixes are the regions, upper left side that are positioned at the matrix of this 5 × 5 square pit 140), and its pits 140a corresponding be the tested point at silicon chip 700 centers.
In one embodiment of the invention, the diameter of pit 140 equals the width of orbital groove 130, is 5mm, and the distance between two pit 140 centers of circle is 31mm.In other embodiments of the invention, the distance between the width of the diameter of pit 140, orbital groove 130, two pit 140 centers of circle can be determined according to the specification of actual measurement silicon chip.
In order to describe the structure of pit 140 and orbital groove 130 in detail, please refer to Fig. 3, Fig. 3 be the A-A of support board of the objective table shown in Fig. 2 c to broken section structural drawing, wherein support board 100 is along A-A to analysing and observe.As shown in the figure, objective table comprises the support board 100 and the limited block 200 that are made up of conductive layer 110 and insulation course 120, and conductive layer 110 is made up of conductive material.Pit 140 and orbital groove 130 are arranged in insulation course 120, in conjunction with Fig. 4 reference, Fig. 4 is that the A-A of insulation course 120 in the support board 100 shown in Fig. 3 is to broken section structural drawing, as shown in the figure, pit 140 is that spherical part 141 and column part 142 stacks form, and spherical part 141 has with column part 142 diameter equating.The degree of depth of pit 140 equals height and the spherical part 141 height sums of column part 142, owing to the degree of depth of pit 140 being set being greater than the thickness of insulation course 120, be the thickness that the height of column part 142 and spherical part 141 height sums are greater than insulation course 120, make the top of spherical part 141 penetrate insulation course 120 (forming an aperture on insulation course 120 closes on the face of spherical part 141).
Preferably, spherical part 141 be hemisphere, therefore the radius sum of the height of column part 142 and this hemisphere is greater than the thickness of insulation course 120.(pit 140 that needs connect can be chosen according to actual conditions to connect a part in described 26 pits 140 by connecting groove, can form different orbital groove 130 because choose the 140 use connecting groove connections of different pits, and this orbital groove 130 is determined by test custom and testing requirement), the width of described connecting groove equals the diameter of column part 142, and all described connecting grooves are connected to form orbital groove 130.With reference to figure 5, Fig. 5 is that the B-B of the objective table shown in Fig. 2 c is to broken section structural drawing, wherein, the degree of depth of orbital groove 130 is more than or equal to the degree of depth of column part 142, but be less than the thickness of insulation course 120, therefore pit 140 and orbital groove 130 partial stacks, but the spherical part 141 of pit 140 has a part at least in orbital groove 130 outsides (as shown in the figure).Carry out after above-mentioned setting, conductive layer 110 is bonded together and is formed one (also can be connected by other means to form one, for example, use screw connection etc.) by bonding agent with insulation course 120.Alternatively, the diameter of conductive layer 110 and insulation course 120 and thickness can be definite according to the needs of actual measurement, and those skilled in the art can determine above-mentioned parameter easily.
In the time that silicon slice under test is silicon chip 700, there is a part in pit 140 to exceed (in the matrix of described 5 × 5 square pits 140, not comprising other pits 140 of described 4 × 4 square pit 140 matrixes) measurement range of silicon chip 700, use the rubber hemisphere mating with the size of the semi-spherical shape of spherical part 141 to fill spherical part 141; In the time that silicon slice under test is silicon chip 600, fill the spherical part 141 of pit 140a with described rubber hemisphere.
In addition, as shown in Figure 5, objective table is except also comprising snak link 300 and base 400, in certain embodiments, one independent base 400 can be set, use if objective table of the present invention is directly placed on existing four point probe tester, using the base of described four point probe tester as base 400.One end of snak link 300 is relative with base 400 fixing, and the other end is included in orbital groove 130.
Particularly, the structure of snak link 300 is with reference to figure 6a and Fig. 6 b, and Fig. 6 a is the cut-open view of a kind of embodiment of snak link 300, and Fig. 6 b is the decomposition diagram of the snak link 300 shown in Fig. 6 a.With reference to figure 6a and Fig. 6 b, snak link 300 comprises place kick 310, spring 320 and housing 330, wherein, the right cylinder that housing 330 is hollow, place kick 310 and spring 320 are set in chamber therein, this cylindrical diameter is slightly less than the diameter of column part 142, and housing 330 can be received by orbital groove 130 and pit 140.Housing 330 one end relative with base 400 fixing (being that snak link 300 is relatively fixing with base 400), the other end arranges opening 340, the diameter of this opening 340 is less than the diameter of place kick 310, and place kick 310 can at least be exposed a part to housing 330 outsides by this opening 340, the bottom of place kick 310 arranges spring 320, one end resiliency supported place kick 310 of spring 320, the other end is near bottom surface or the base 400 (this other end is relative with housing 330 fixing) of living housing 330.The internal diameter that the diameter of described place kick 310 is greater than spring 320 is less than the internal diameter of housing 330, and place kick 310 and spring 320 are substantially on same axial line, place kick 310 Compress Springs 320 make its deformation, and therefore place kick 310 is withstood on the top of housing 330 by the elastic force of spring 320.
When applied pressure in place kick 310 be greater than spring 320 be applied to the elastic force in place kick 310 time, place kick 310 moves down and Compress Spring, the part of exposing housing 330 outsides along with place kick 310 reduces gradually, and place kick 310 progresses into housing 330 inside.Be applied to the pressure in place kick 310 if remove, the top of housing 330 is pushed up again in place kick 310 by spring 320, and some is exposed at housing 330 outsides.
The circuit breaker that control test probe is moved down perpendicular to silicon chip surface, its one end of opening circuit is electrically connected with conductive layer 110, and the other end is electrically connected with spring 320.Place kick 310 and spring 320 are all made (for example metal) by conductive material, the object of carrying out above-mentioned arrangement is, if place kick 310 contacts to conductive layer, the circuit moving down perpendicular to silicon chip surface by conductive layer 110, the place kick 310 of conduction and spring 320 threes' touch controls test probe is switched on.
The degree of depth that length that place kick 310 exposed portions serve add upper shell 330 is equal to or greater than pit 140 is set, makes snak link 300 partially or completely enter the rear place kick of pit 140 and can touch conductive layer 110 by the aperture of pit 140 bottoms.Preferably, support board 100 is close to base 400 and is placed, and the cylindrical height of housing 330 equals the degree of depth of orbital groove 130, and place kick 310 its parts of exposing housing 330 that withstood on housing 330 tops by spring 320 can be touched conductive layer 110.
Carry out reference in conjunction with Fig. 5 and Fig. 7, Fig. 7 is that another B-B of the objective table shown in Fig. 5 is to broken section structural drawing, as shown in Figure 5, one end that snak link 300 closes on place kick 310 is placed in orbital groove 130, and now place kick 310 is subject to orbital groove 130 and is squeezed to small part and bounces back in housing 330.Move horizontally support board 100 along arrow A 1 direction, when snak link 300, to be close to orbital groove 130 interior when mobile, because place kick 310 is subject to the extruding of orbital groove 130 inwalls all the time, spring 320 is compressed all the time, and place kick 310 is contact insulation layer 120 all the time, the circuit that therefore described control test probe moves down perpendicular to silicon chip surface disconnects all the time.As shown in Figure 7, when mobile support board 100 makes snak link 300 enter pit 140, because the degree of depth of pit 140 is greater than the degree of depth of orbital groove 130, orbital groove 130 can not continue to push place kick 310, the pressure being applied in place kick 310 disappears, spring 320 is unfolded, the elastic force of spring 320 is upwards ejected place kick 310 and exposes a part, the part that this exposes arrives pit 140 bottoms, and by the aperture contact conductive layer 110 of pit 140 bottoms, therefore controlling the circuit that the vertical silicon chip surface of test probe moves down is switched on, the tested point that test probe presses down on contact measured silicon chip automatically carries out square resistance test.Complete after the test of this tested point, make described test probe leave the surface (for example operational testing probe moves straight up) of silicon slice under test, then continue to move support board 100 along orbital groove 130, just can complete the test of all tested points on silicon slice under test.
It should be noted that, pit 140 and the snak link 300 in embodiment above, described are a preferred embodiment of the present invention, in other some embodiment of the present invention, pit 140 and snak link 300 can be set to any suitable shape and size, only need make to move to pit 140 when interior when snak link 300, can be passed through the aperture contact conductive layer 110 of pit bottom by the place kick 310 of spring 320 jack-up.Therefore, the shape and size of the various piece of pit 140 and snak link 300 are not limited to the shape and size described in the embodiment of the present invention.
Optionally, in the time that the aperture contact conductive layer 110 of pit 140 bottoms is passed through in place kick 310, also can be handled as follows: the first, when place kick 310 touches conductive layer 110, control loudspeaker sends continuous prompt tone (for example continual buzzing), once along with place kick 310 is moved, place kick 310 is separated with conductive layer 110, loudspeaker stops sending prompt tone, therefore realized in controllable position and made loudspeaker send continuous prompt tone, handled easily personnel position tested point in the process of mobile support board 100; The second, in the time that place kick 310 touches conductive layer 110, connects the power supply of LED, makes LED send regular flash of light, and handled easily personnel position tested point in the process of mobile support board 100; The third, when place kick 310 touches conductive layer 110, enable position locking device makes support board 100 continue motion (being that silicon slice under test cannot continue motion with respect to probe) with respect to probe, therefore can, at fixed position dynamic resistance support board 100, realize and can aim at tested point at fixed position test probe.Described position local device can be realized by the device of existing suitable construction.
The method that the circuit that also can adopt other triggering control test probes to move down perpendicular to silicon chip surface is connected, please refer to Fig. 8, Fig. 8 is that the B-B of another embodiment of the objective table shown in Fig. 2 c is to broken section structural drawing, in pit 140 bottoms, optical signal receiver 501 is set, optical signal transmitter 502 is set on base 400, optical signal transmitter 502 can be received by orbital groove 130, and moves along orbital groove 130.Optical signal transmitter 502 sends a branch of straight line light signal L incessantly, when optical signal transmitter interior when mobile at orbital groove 130, optical signal receiver 501 does not receive any light signal, and the circuit that therefore described control test probe moves down perpendicular to silicon chip surface remains open; Under optical signal transmitter 502 moves to pit 140 time, signal receiver 501 receives light signal L, the circuit that described control test probe moves down perpendicular to silicon chip surface is connected, and the tested point that test probe presses down on contact measured silicon chip automatically carries out square resistance test.Repeat the test that above-mentioned steps can complete all tested points on silicon slice under test.Alternatively, in the time that signal receiver 501 receives light signal L, can also be handled as follows: the first, in the time that signal receiver 501 receives light signal L, control loudspeaker sends continuous prompt tone, once cause the light path of light signal L to change along with optical signal transmitter 502 moves, signal receiver 501 no longer receives light signal L, loudspeaker stops sending prompt tone, therefore having realized in controllable position makes loudspeaker send continuous prompt tone (for example continual buzzing), handled easily personnel position tested point in the process of mobile support board 100, the second, in the time that signal receiver 501 receives light signal L, connects the power supply of LED, makes LED send regular flash of light, and handled easily personnel position tested point in the process of mobile support board 100, the third, in the time that signal receiver 501 receives light signal L, enable position locking device makes support board 100 continue motion (being that silicon slice under test cannot continue motion with respect to probe) with respect to probe, therefore can, at fixed position dynamic resistance support board 100, realize and can aim at tested point at fixed position test probe.Described position local device can be realized by the device of existing suitable construction.
Above-mentioned embodiment has exemplified respectively the situation on silicon slice under test with 3 × 3,4 × 4,5 × 5 tested points, in the time carrying out the square resistance uniformity test of silicon chip, may need to carry out the more tests of tested point such as 8 × 8 tested points, therefore need and tested point number according to test, n × n pit (n is greater than 2 integer) can be set on support board 100.
It should be noted that; the test probe of mentioning in above-mentioned embodiment is the probe of four probe method test square resistance; use existing four point probe tester to carry out the square resistance test of silicon chip in conjunction with method provided by the invention, and use the auxiliary square resistance test of carrying out silicon chip of objective table provided by the invention all to belong to the scope of protection of present invention.
Implement above-mentioned embodiment, in not moving silicon chip with respect to objective table, with regard to realizing, the multiposition on this silicon chip is carried out to square resistance test, the reduction of having avoided wearing and tearing silicon chip and cause this silicon chip photoelectric conversion rate, and by trigger point is set on support board, guarantee that different operating personnel can test the same position on silicon chip, the test error of having avoided artificial difference to bring.On this support board, can also realize easily the square resistance uniformity test of silicon chip.Resistance meter production cost provided by the invention is low, simple in structure and be easy to assembling and maintenance.
Above disclosed is only a kind of preferred embodiment of the present invention, the interest field that certainly can not limit the present invention with this, and the equivalent variations of therefore doing according to the claims in the present invention, still belongs to the scope that the present invention is contained.
Claims (28)
1. a method of testing for the square resistance of silicon chip, is characterized in that, the method comprises:
A. silicon slice under test is placed on support board, placement is close to the limited block being arranged on described support board in the edge of described silicon slice under test, makes described silicon slice under test relative with described support board fixing;
B. according to tested point, corresponding trigger point is set respectively, mobile described support board, if activate described trigger point in the process of mobile described support board, reversibly locks this support board, and makes test probe aim at tested point corresponding to described trigger point;
C. described test probe contacts described tested point and carries out square resistance test.
2. method according to claim 1, is characterized in that, activates described trigger point comprise if described in the process of mobile described support board:
Mobile described support board is to excite the physical construction trigger architecture that is arranged on described trigger point place; Or
Mobile described support board is to excite the photosignal trigger architecture that is arranged on described trigger point place.
3. method according to claim 2, is characterized in that:
Limit the motion track of described support board with orbital groove.
4. method according to claim 3, is characterized in that:
Described trigger point is arranged on described support board and under described tested point.
5. method according to claim 4, is characterized in that:
Described orbital groove travels through described trigger point.
6. method according to claim 5, is characterized in that:
Described silicon slice under test is that the length of side is the square silicon chip of 125mm or 156mm.
7. method according to claim 6, is characterized in that:
The spread geometry of described tested point on described silicon slice under test is n × n square matrix, and described n is greater than 2 integer.
8. method according to claim 7, is characterized in that:
Described test probe is the test probe that is applicable to four probe method test square resistance.
9. a silicon chip resistance meter, comprises test probe, test probe control circuit and support board, it is characterized in that: this silicon chip resistance meter has used the method as described in claim 1 to 8 any one in the time of the square resistance test of carrying out silicon slice under test.
10. a method of testing for the square resistance of silicon chip, is characterized in that, the method comprises:
A. silicon slice under test is placed on support board, placement is close to the limited block being arranged on described support board in the edge of described silicon slice under test, makes described silicon slice under test relative with described support board fixing;
B. according to tested point, corresponding trigger point is set respectively, mobile described support board, if activate described trigger point in the process of mobile described support board, send cue, stop mobile described support board so that test probe is aimed at tested point corresponding to this trigger point;
C. described test probe contacts described tested point and carries out square resistance test.
11. methods according to claim 10, is characterized in that, activate described trigger point comprise if described in the process of mobile described support board:
Mobile described support board is to excite the physical construction trigger architecture that is arranged on described trigger point place; Or
Mobile described support board is to excite the photosignal trigger architecture that is arranged on described trigger point place.
12. methods according to claim 11, is characterized in that:
Limit the motion track of described support board with orbital groove.
13. methods according to claim 12, is characterized in that:
Described trigger point is arranged on described support board and under described tested point.
14. methods according to claim 13, is characterized in that:
Described orbital groove travels through described trigger point.
15. methods according to claim 14, is characterized in that:
Described silicon slice under test is that the length of side is the square silicon chip of 125mm or 156mm.
16. methods according to claim 15, is characterized in that:
The spread geometry of described tested point on described silicon slice under test is n × n square matrix, and described n is greater than 2 integer.
17. methods according to claim 16, is characterized in that:
Described test probe is the test probe that is applicable to four probe method test square resistance.
18. 1 kinds of silicon chip resistance meters, comprise test probe, test probe control circuit and support board, it is characterized in that: this silicon chip resistance meter has used the method as described in claim 10 to 17 any one in the time of the square resistance test of carrying out silicon slice under test.
The method of testing of the square resistance of 19. 1 kinds of silicon chips, is characterized in that, the method comprises:
A. silicon slice under test is placed on support board, placement is close to the limited block being arranged on described support board in the edge of described silicon slice under test, makes described silicon slice under test relative with described support board fixing;
B. according to tested point, corresponding trigger point is set respectively, mobile described support board, if activate described trigger point in the process of mobile described support board, connect the control circuit of test probe, described control circuit is switched on the described test probe of rear control and contacts test point corresponding to this trigger point and carry out square resistance test;
C. described test probe contacts described tested point and carries out square resistance test.
20. methods according to claim 19, is characterized in that:
Described control circuit is to control the control circuit that described test probe is in vertical motion.
21. according to the method described in claim 19 or 20, it is characterized in that, activates described trigger point comprise if described in the process of mobile described support board:
Mobile described support board is to excite the physical construction trigger architecture that is arranged on described trigger point place; Or
Mobile described support board is to excite the photosignal trigger architecture that is arranged on described trigger point place.
22. methods according to claim 21, is characterized in that:
Limit the motion track of described support board with orbital groove.
23. methods according to claim 22, is characterized in that:
Described trigger point is arranged on described support board and under described tested point.
24. methods according to claim 23, is characterized in that:
Described orbital groove travels through described trigger point.
25. methods according to claim 24, is characterized in that:
Described silicon slice under test is that the length of side is the square silicon chip of 125mm or 156mm.
26. methods according to claim 25, is characterized in that:
The spread geometry of described tested point on described silicon slice under test is n × n square matrix, and described n is greater than 2 integer.
27. methods according to claim 26, is characterized in that:
Described test probe is the test probe that is applicable to four probe method test square resistance.
28. 1 kinds of silicon chip resistance meters, comprise test probe, test probe control circuit and support board, it is characterized in that: this silicon chip resistance meter has used the method as described in claim 19 to 27 any one in the time of the square resistance test of carrying out silicon slice under test.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010548636.1A CN102200552B (en) | 2010-11-17 | 2010-11-17 | Method and equipment for testing square resistor of silicon sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010548636.1A CN102200552B (en) | 2010-11-17 | 2010-11-17 | Method and equipment for testing square resistor of silicon sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102200552A CN102200552A (en) | 2011-09-28 |
| CN102200552B true CN102200552B (en) | 2014-07-09 |
Family
ID=44661392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010548636.1A Active CN102200552B (en) | 2010-11-17 | 2010-11-17 | Method and equipment for testing square resistor of silicon sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102200552B (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102539919A (en) * | 2011-12-19 | 2012-07-04 | 中利腾晖光伏科技有限公司 | Method for selectively testing diffused sheet resistance |
| CN102522354B (en) * | 2012-01-12 | 2014-02-19 | 中国科学院微电子研究所 | Method and device for extracting square resistance of interconnection line |
| CN102621390B (en) * | 2012-03-31 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | Square resistance measurement method and Square resistance measurement device |
| CN103018564B (en) * | 2013-01-05 | 2014-10-08 | 奥特斯维能源（太仓）有限公司 | Method for testing diffused layer resistance of finished cell |
| CN103235185B (en) * | 2013-04-18 | 2015-09-09 | 常州天合光能有限公司 | For the method for the test sheet resistance in selectivity emitting electrode cell manufacturing process |
| CN105203847B (en) * | 2015-09-29 | 2018-10-02 | 中国科学院上海硅酸盐研究所 | A kind of layer material square resistance and tie point contact resistance test method |
| CN105182081B (en) * | 2015-09-29 | 2018-10-02 | 中国科学院上海硅酸盐研究所 | A kind of layer material square resistance test method |
| CN106291111A (en) * | 2016-08-12 | 2017-01-04 | 深圳市拓普微科技开发有限公司 | A kind of conductive adhesive tape tester |
| CN106684011B (en) * | 2016-12-28 | 2019-04-23 | 西安电子科技大学 | The method for testing ohmic contact regions square resistance |
| CN106783661B (en) * | 2016-12-28 | 2019-04-23 | 西安电子科技大学 | Ohmic contact regions square resistance test method based on vertical checkout figure |
| CN106684010B (en) * | 2016-12-28 | 2019-06-21 | 西安电子科技大学 | Active area square resistance test method based on vertical checkout figure |
| CN111103460B (en) * | 2018-10-25 | 2021-03-16 | 株洲中车时代半导体有限公司 | Method for improving accuracy of four-probe RS test |
| CN109411382A (en) * | 2018-10-25 | 2019-03-01 | 江苏彩虹永能新能源有限公司 | Silicon wafer voltage check device after a kind of diffusion |
| CN110310900B (en) * | 2019-07-22 | 2021-12-07 | 上海华力集成电路制造有限公司 | Nickel metal silicide generation monitoring method |
| CN110672926B (en) * | 2019-10-24 | 2021-08-10 | 河北工业大学 | Electrical material conductivity measuring device and measuring system suitable for different working conditions |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987365A (en) * | 1989-04-28 | 1991-01-22 | Hewlett-Packard Company | Method and apparatus for testing integrated circuits |
| CN101413972A (en) * | 2008-11-27 | 2009-04-22 | 天津大学 | System and method for testing electric resistivity of thin film thermoelectricity material |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7714596B2 (en) * | 2006-12-15 | 2010-05-11 | Four Dimensions Inc. | System and methods of measuring semiconductor sheet resistivity and junction leakage current |
| CN101587149B (en) * | 2008-05-23 | 2011-11-16 | 深圳富泰宏精密工业有限公司 | Impedance test device |
| JP2010165819A (en) * | 2009-01-15 | 2010-07-29 | Renesas Electronics Corp | Apparatus and method for testing semiconductor integrated circuits |
| CN101872799A (en) * | 2009-04-21 | 2010-10-27 | 上海太阳能科技有限公司 | Method for improving diffusion uniformity of solar battery |
-
2010
- 2010-11-17 CN CN201010548636.1A patent/CN102200552B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987365A (en) * | 1989-04-28 | 1991-01-22 | Hewlett-Packard Company | Method and apparatus for testing integrated circuits |
| CN101413972A (en) * | 2008-11-27 | 2009-04-22 | 天津大学 | System and method for testing electric resistivity of thin film thermoelectricity material |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2010-165819A 2010.07.29 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102200552A (en) | 2011-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102200552B (en) | Method and equipment for testing square resistor of silicon sheet | |
| CN102914673B (en) | Probe testing device | |
| US8670112B2 (en) | Testing apparatus for testing light emitting diode lamp and method for operating the same | |
| TW200610085A (en) | Probe cassette, semiconductor tester and method for manufacturing semiconductor device | |
| DE602004009057D1 (en) | PLATE-DRIVEN PROBE, PROCESS FOR THEIR MANUFACTURE AND ITS APPLICATION | |
| TW201317598A (en) | Testing device for solid oxide fuel cell | |
| JP2011099746A (en) | Sample stand for measuring solar battery cell | |
| CN100432679C (en) | Vertical probe card | |
| JP4625941B2 (en) | Solar cell performance evaluation system | |
| CN2795865Y (en) | Composite printed circuit board test device | |
| CN212625492U (en) | LED chip detection device | |
| CN205450198U (en) | Thick film hybrid integrated circuit tester | |
| WO2017159709A1 (en) | Inspecting device | |
| CN112904205A (en) | Fuel cell measuring device | |
| CN201852902U (en) | ITO (information technology outsourcing) film conduction tester | |
| CN2938404Y (en) | Test device for measuring PN junction current | |
| CN201725010U (en) | Multifunctional crystal grain spot measurement circuit of spot measurement machine and multifunctional spot measurement machine | |
| TW200642175A (en) | Method of testing ball grid array packed device in real system and test socket assembly therefor | |
| CN211718353U (en) | Multi-step shrinkage probe | |
| CN206650629U (en) | A kind of MWT solar cell tests device | |
| CN206442353U (en) | Crystal silicon solar batteries built-in testing device | |
| CN201757775U (en) | Dual-purpose conversion structure of point measuring machine and dual-purpose point measuring machine thereof | |
| JP4386783B2 (en) | Solar cell characteristic measurement device | |
| CN204788897U (en) | Use total mark ball to survey semiconductor laser tube core device | |
| CN201917324U (en) | Nondestructive measuring device for current-limiting aperture of vertical-cavity surface-emitting laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220616 Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 310053 No. 1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee before: Zhengtai Xinneng Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |