CN106684011A - Method for testing square resistance of ohmic contact region - Google Patents

Method for testing square resistance of ohmic contact region Download PDF

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CN106684011A
CN106684011A CN201611241030.7A CN201611241030A CN106684011A CN 106684011 A CN106684011 A CN 106684011A CN 201611241030 A CN201611241030 A CN 201611241030A CN 106684011 A CN106684011 A CN 106684011A
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electrode
group
resolution chart
resistance
resistance value
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CN106684011B (en
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郑雪峰
李小炜
侯晓慧
王颖哲
王奥琛
王冲
马晓华
郝跃
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Xidian University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's

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  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention discloses a method for testing square resistance of an ohmic contact region. A realization scheme is as follows: two groups of ohmic contact square resistance test patterns with electrode width of W are prepared; each kind of test pattern comprises three ohmic electrodes; the dimensions of the first electrodes and the third electrodes, the distance between the first electrodes and the second electrodes and the distance between the second electrodes and the third electrodes are all equivalent in the two groups of test patterns; the length of the second electrode in the second group of the test pattern is <alpha> times of that of the second electrode in the first group of the test pattern; the resistance values between the first electrodes and the third electrodes are tested in the two groups of test patterns separately; and a difference value between the resistance value tested from the second group of the test pattern and the resistance value tested from the first group of the test pattern is calculated, and the obtained result is multiplied by a W/(<alpha>-1)L<12>) item to obtain the square resistance of the ohmic contact region in each group of the test patterns. The test patterns are simple to manufacture, the test method is simple and convenient, the result is accurate and reliable, and the method can be used in manufacturing of a high-electron-mobility heterojunction transistor.

Description

The method for testing ohmic contact regions square resistance
Technical field
The invention belongs to microelectronic, the method for testing of the ohmic contact regions square resistance being related specifically to can be used for The preparation of high electron mobility heterojunction transistor.
Background technology
Second generation semi-conducting material compared to the first generation semi-conducting material with Si as representative and with GaAs representative, GaN material has that energy gap is big, breakdown electric field is high, high temperature resistant, erosion-resisting advantage, the allusion quotation as third generation semi-conducting material Type is represented., there is high concentration, electricity high at heterojunction boundary in the heterostructure transistors for particularly being formed with the material such as AlGaN The two-dimensional electron gas of transport factor, thus have the advantages that operating current is big, operating rate is fast, have in high frequency, high power field There is big advantage and be widely applied prospect.In recent years, related device has become international and domestic study hotspot, and part is Through realizing commercial applications.
Ohmic electrode is generally the important component of device as the input/output terminal of semiconductor devices.Ohmic electrode Quality directly affect the characteristics such as frequency response, energy dissipation, junction temperature, output current, efficiency, the gain of semiconductor devices, because And turn into the emphasis of concern.By taking gallium nitride transistor as an example, generally in multiple layer metals such as ohmic area deposit Ti/Al/Ni/Au, Then Ohmic contact is formed using the method for high-temperature thermal annealing.The temperature and time of annealing can have a strong impact on the good of Ohmic contact It is bad.Ohmic contact resistance rate is to judge the important indicator of Ohmic contact quality.Therefore, suitable method is selected to Ohmic contact electricity It is most important for the development and assessment of device that resistance rate carries out accurately sign.
At present, the measurement most common method of Ohmic contact square resistance is transmission-line modeling method TLM.This method is to pass through One group of active area of different spacing, the resistance between the adjacent Ohmic electrode of the different spacing of extraction are designed, and then determines Ohmic contact Square resistance.During Ohmic contact square resistance is extracted, in order to simplify calculating, Ohmic contact is often approx thought The square resistance R in areashcWith the square resistance R of active areashIt is equal.In fact, the square resistance of active area be mainly derived from it is heterogeneous Two-dimensional electron gas at knot, and ohmic contact regions square resistance is then that Metal deposition, high temperature are implemented on the basis of active area The complicated technique such as annealing, therefore the square resistance of the two and unequal.Obviously, this approximate method can cause Ohmic contact The accuracy rate of square resistance is low, influences the performance of high electron mobility heterojunction transistor.
With the further development of semiconductor power device, the accurate characterization of ohmic contact regions square resistance is opened technique Hair, the raising of device performance and the assessment of reliability influence are increasing.Therefore, ohmic contact regions square resistance is characterized exactly Become more and more important.
The content of the invention
It is an object of the invention to be directed to above-mentioned the deficiencies in the prior art, a kind of test ohmic contact regions square resistance is proposed Method, to improve the accuracy rate of measurement, and then improve the performance of electron mobility heterojunction transistor.
To achieve the above object, technical scheme comprises the following steps：
(1) Ohmic contact resolution chart is prepared：
First deposit metal electrode on semiconductor bulk material, then prepare two groups of width and be using the method for high annealing The Ohmic contact square resistance resolution chart of W, every kind of resolution chart includes three Ohmic electrodes；
Three Ohmic electrode length in first group of resolution chart are respectively L11、L12、L13, distance point between Ohmic electrode Wei not L1a, L1b；Three Ohmic electrode length in second group of resolution chart are respectively L21、L22、L23, between Ohmic electrode away from From respectively L2a, L2b, wherein L21=L11, L22=α L12, L23=L13, L2a=L1a, L2b=L1b, α ＞ 0, and α ≠ 1；
(2) measurement of square resistance：
(2a) applies bias voltage between the first electrode and the 3rd electrode of first group of resolution chart, and goes here and there in the loop Connection ammeter, reads the value of ammeter, and the resistance value R between first electrode and the 3rd electrode is calculated using I-V relationsL1：
RL1=V1/I1；
Wherein RL1It is the resistance value in first group of resolution chart between first electrode and the 3rd electrode, V1It is first group of test First electrode and voltage added on the 3rd electrode, I in figure1For in first group of resolution chart by first electrode, second electrode, Current value in the loop that 3rd electrode and active area are constituted；
(2b) applies bias voltage between the first electrode and the 3rd electrode of second group of resolution chart, and goes here and there in the loop Connection ammeter, reads the value of ammeter, and the resistance value R between first electrode and the 3rd electrode is calculated using I-V relationsL2：
RL2=V2/I2；
Wherein RL2It is the resistance value in second group of resolution chart between first electrode and the 3rd electrode, V2It is second group of test First electrode and voltage added on the 3rd electrode, I in figure2For in second group of resolution chart by first electrode, second electrode, Current value in the loop that 3rd electrode and active area are constituted；
(2c) is according to two resistance value R measured in (2a) and (2b)L1And RL2, build every group of resolution chart ohm and connect Touch the square resistance computing formula in area：Rshc=((RL2-RL1)W)/((α-1)L12)。
The present invention has the following advantages that compared with prior art：
1) resolution chart preparation method is easy
Present invention only requires two groups of resolution charts of different Ohmic contact square resistances are prepared, resolution chart is simple, surveys Method for testing is quick and convenient.
2) square resistance method of testing is simple
The present invention only needs the resolution charts different to two groups to carry out electrical measurement, using measured resistance value by simple Mathematical computations, you can obtain ohmic contact regions square resistance.
3) accurate measurement can be realized to ohmic contact regions square resistance
Conventional transmission line model is when ohmic contact regions square resistance is measured, it is believed that ohmic contact regions square resistances RshcWith Active area square resistance RshApproximately equal, i.e., by RshObtain RshcValue, therefore measured value occurs in that very big error.This hair The bright method by solving equation is eliminated containing RshItem, thus solve RshcDuring be not related to Rsh, can direct solution go out Rshc's Value, improves the precision of measurement, and reliability is high, has great role to the performance and reliability of accurate evaluation gallium nitride device.
Brief description of the drawings
Fig. 1 realizes flow chart for of the invention；
Fig. 2 is existing resolution chart cross-sectional view；
Fig. 3 is the top view structural representation of first group of resolution chart that the present invention builds；
Fig. 4 is the top view structural representation of second group of resolution chart that the present invention builds；
Fig. 5 is the circuit theory diagrams of test resistance value in the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the invention is described in further detail.Embodiment For illustrating the present invention, but it is not limited to the scope of the present invention.
Reference picture 1, it is of the invention to realize that step is as follows：
Step 1, prepares ohmic contact regions square resistance resolution chart.
Reference picture 2, this step prepares the survey of ohmic contact regions square resistance according to the cross-section structure of existing resolution chart Attempt shape, its step is as follows：
The structure of resolution chart 1a) is set：It is followed successively by substrate layer, nitride buffer layer and aluminum gallium nitride potential barrier from bottom to top Layer；
1b) metal electrode is first deposited on aluminum gallium nitride barrier layer body material；
Identical technique 1c) is used on a piece of gallium nitride heteroepitaxial structure body material using the method for high annealing The Ohmic contact resolution chart that two arrays of electrodes width is W is prepared respectively, wherein：
First group of resolution chart is as shown in figure 3, its three Ohmic electrode length are respectively L11、L12、L13；Ohmic electrode The distance between be respectively L1a、L1b；
Second group of resolution chart is as shown in figure 4, its three Ohmic electrode length are respectively L21、L22、L23；Ohmic electrode The distance between be respectively L2a、L2b。
Wherein L22=α L12, α ＞ 0 and α ≠ 1, L21=L11, L23=L13, L2a=L1a, L2b=L1b。
Step 2, the resistance value between the first electrode and the 3rd electrode of two kinds of figures of test.
The resistance test schematic diagram of reference picture 5, this step is between the first electrode and the 3rd electrode of two kinds of resolution charts Resistance value testing procedure it is as follows：
2a) apply bias voltage between the first electrode and the 3rd electrode of first group of resolution chart, and go here and there in the loop Connection ammeter, reads the value of ammeter, and the resistance value R between first electrode and the 3rd electrode is calculated using I-V relationsL1：
RL1=V1/I1；
Wherein RL1It is the resistance value between first group of resolution chart first electrode and the 3rd electrode, V1It is first group of test chart First electrode and voltage added on the 3rd electrode, I in shape1For in first group of resolution chart by first electrode, second electrode, Current value in the loop that three electrodes and active area are constituted.
2b) apply bias voltage between the first electrode and the 3rd electrode of second group of resolution chart, and go here and there in the loop Connection ammeter, reads the value of ammeter, and the resistance value R between first electrode and the 3rd electrode is calculated using I-V relationsL2：
RL2=V2/I2；
Wherein RL2It is the resistance value between second group of resolution chart first electrode and the 3rd electrode, V2It is second group of test chart First electrode and voltage added on the 3rd electrode, I in shape2For in second group of resolution chart by first electrode, second electrode, Current value in the loop that three electrodes and active area are constituted.
Step 3, calculates every kind of resolution chart ohmic contact regions square resistance.
3a) according to Fig. 3, the resistance value in first group of resolution chart between first electrode and the 3rd electrode is expressed as：
RL1=RA1+RA12+RA2+RA23+RA3,
Wherein, RA1It is the resistance value of first electrode in first group of resolution chart, RA12It is the first electricity in first group of resolution chart The resistance value of active area, R between pole and second electrodeA2It is the resistance value below second electrode in first group of resolution chart, RA23For In first group of resolution chart between second electrode and the 3rd electrode active area resistance value, RA3For the 3rd in first group of resolution chart The resistance value of electrode；
3b) according to Fig. 4, the resistance value in second group of resolution chart between first electrode and the 3rd electrode is expressed as：
RL2=RB1+RB12+RB2+RB23+RB3,
Wherein, RB1It is the resistance value of first electrode in second group of resolution chart, RB12It is the first electricity in second group of resolution chart The resistance value of active area, R between pole and second electrodeB2It is the resistance value below second electrode in second group of resolution chart, RB23For In second group of resolution chart between second electrode and the 3rd electrode active area resistance value, RB3For the 3rd in second group of resolution chart The resistance value of electrode；
3c) calculate each several part resistance value in two kinds of resolution charts：
3c1) determine the corresponding resistance of two kinds of resolution charts
Due to two groups of resolution charts on same pellet material using in identical preparation technology, and the first resolution chart First electrode it is identical with the first electrode size in second resolution chart, the 3rd electrode in the first resolution chart and The 3rd electrode size in two kinds of resolution charts is identical, between the first electrode and second electrode in the first resolution chart away from The distance between first electrode and second electrode in equal to second resolution chart, the second electricity in the first resolution chart The distance between pole and the 3rd electrode equal to the distance between the second electrode in second resolution chart and the 3rd electrode, therefore The corresponding resistance value of two kinds of resolution charts has following relation：
RA1=RB1, RA3=RB3,
RA12=RB12, RA23=RB23,
3c2) the resistance-type R in first group of resolution chart of definition calculating below second electrodeA2In second group of resolution chart Second electrode below resistance-type RB2：
RA2=(RshcL12)/W,
RB2=(RshcαL12)/W,
Wherein, RshcIt is the square resistance of ohmic contact regions in resolution chart, W is the electrode width in every group of resolution chart, α is known constant, α ＞ 0 and α ≠ 1, L12It is the length of second electrode in first group of resolution chart；
3d) by step 3c2) in RA2Substitute into step 3a) in resistance expression formula, obtain first in first group of resolution chart Resistance value expression R between electrode and the 3rd electrodeL1：
RL1=RA1+RA12+(RshcL12)/W+RA23+RA3,
3e) by step 3c2) in RB2Substitute into step 3b) in resistance expression formula, obtain first in second group of resolution chart Resistance value expression R between electrode and the 3rd electrodeL2：
RL2=RB1+RB12+(RshcαL12)/W+RB23+RB3,
3f) use step 3e) and step 3d) expression formula work it is poor, obtain equation：RL2-RL1=(Rshc(α-1)L12)/W,
3g) by step 3f) equation, derive calculate every group of resolution chart in ohmic contact regions square resistance formula For：
Rshc=((RL2-RL1)W)/((α-1)L12),
3h) by step 2a) in RL1Measured value and step 2b) in RL2Measured value substitute into step 3g) in calculating R is obtained in formulashcValue be：
Rshc=((V2/I2-V1/I1)W)/((α-1)L12)。
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is clear that for this area Professional for, after present disclosure and principle is understood, can modify within the spirit and principles in the present invention, Equivalent and improvement etc., can also use GaAs etc. different for example, resolution chart of the present invention is based on GaN material Ohmic contact square resistance resolution chart in the semi-conducting material manufacturing present invention.Modification, equivalent and the improvement made are equal Should be included within protection scope of the present invention.

Claims (2)

1. a kind of method of test ohmic contact regions square resistance, comprises the following steps：
(1) Ohmic contact resolution chart is prepared：
First deposit metal electrode on semiconductor bulk material, then prepare two groups of width and be W's using the method for high annealing Ohmic contact square resistance resolution chart, every kind of resolution chart includes three Ohmic electrodes；
Three Ohmic electrode length in first group of resolution chart are respectively L11、L12、L13, distance is respectively between Ohmic electrode L1a, L1b；Three Ohmic electrode length in second group of resolution chart are respectively L21、L22、L23, the distance between Ohmic electrode point Wei not L2a, L2b, wherein L21=L11, L22=α L12, L23=L13, L2a=L1a, L2b=L1b, α ＞ 0, and α ≠ 1；
(2) measurement of square resistance：
(2a) applies bias voltage, and series electrical in the loop between the first electrode and the 3rd electrode of first group of resolution chart Flow table, reads the value of ammeter, and the resistance value R between first electrode and the 3rd electrode is calculated using I-V relationsL1：
RL1=V1/I1；
Wherein RL1It is the resistance value in first group of resolution chart between first electrode and the 3rd electrode, V1It is first group of resolution chart Middle first electrode and voltage added on the 3rd electrode, I1For in first group of resolution chart by first electrode, second electrode, the 3rd Current value in the loop that electrode and active area are constituted；
(2b) applies bias voltage, and series electrical in the loop between the first electrode and the 3rd electrode of second group of resolution chart Flow table, reads the value of ammeter, and the resistance value R between first electrode and the 3rd electrode is calculated using I-V relationsL2：
RL2=V2/I2；
Wherein RL2It is the resistance value in second group of resolution chart between first electrode and the 3rd electrode, V2It is second group of resolution chart Middle first electrode and voltage added on the 3rd electrode, I2For in second group of resolution chart by first electrode, second electrode, the 3rd Current value in the loop that electrode and active area are constituted；
(2c) is according to two resistance value R measured in (2a) and (2b)L1And RL2, every group of resolution chart ohmic contact regions of structure Square resistance computing formula：Rshc=((RL2-RL1)W)/((α-1)L12)。
2. method according to claim 1, wherein builds every group of square of resolution chart ohmic contact regions in step (2c) Resistance calculations formula, is carried out as follows：
Be expressed as resistance value in first group of resolution chart between first electrode and the 3rd electrode by (2c1)：
RL1=RA1+RA12+RA2+RA23+RA3,
Wherein, RA1It is the resistance value of first electrode in first group of resolution chart, RA12For in first group of resolution chart first electrode with The resistance value of active area, R between second electrodeA2It is the resistance value below second electrode in first group of resolution chart, RA23It is first Group resolution chart between second electrode and the 3rd electrode active area resistance value, RA3It is the 3rd electrode in first group of resolution chart Resistance value,
Be expressed as resistance value in second group of resolution chart between first electrode and the 3rd electrode by (2c2)：
RL2=RB1+RB12+RB2+RB23+RB3,
Wherein, RB1It is the resistance value of first electrode in second group of resolution chart, RB12For in second group of resolution chart first electrode with Active area resistance value between second electrode, RB2It is the resistance value below second electrode in second group of resolution chart, RB23It is second group In resolution chart between second electrode and the 3rd electrode active area resistance, RB3It is the electricity of the 3rd electrode in second group of resolution chart Resistance；
(2c3) uses identical preparation technology and two kinds of resolution charts first according to two groups of resolution charts on same pellet material Electrode is identical with the 3rd electrode size, and two groups of first electrodes of resolution chart it is identical with the distance between second electrode, second Electrode is identical with the distance between the 3rd electrode, draws the following relation of each several part resistance value in two kinds of resolution charts：
RA1=RB1, RA12=RB12, RA23=RB23, RA3=RB3,
(2c4) definition calculates the resistance-type R below first group of resolution chart second electrodeA2With second group of resolution chart second electrode The resistance-type R of lower sectionB2：
RA2=(RshcL12)/W,
RB2=(RshcαL12)/ W,
Wherein, RshcIt is the square resistance of ohmic contact regions in resolution chart, W is the electrode width in every group of resolution chart, and α is Known constant, α ＞ 0 and α ≠ 1, L12It is the length of second electrode in first group of resolution chart；
(2c5) is by RA2The resistance expression formula in step (2c1) is substituted into, first electrode and the 3rd electricity in first group of resolution chart is obtained Resistance value expression R between poleL1：
RL1=RA1+RA12+(RshcL12)/W+RA23+RA3,
(2c6) is by RB2The resistance expression formula in step (2c2) is substituted into, first electrode and the 3rd electricity in second group of resolution chart is obtained Resistance value expression R between poleL2：
RL2=RB1+RB12+(RshcαL12)/W+RB23+RB3,
(2c7) is poor with the work of step (2c6) and step (2c5) expression formula, obtains equation：RL2-RL1=(Rshc(α-1)L12)/W,
(2c8) derives the ohmic contact regions square resistance calculated in every group of resolution chart by the equation of step (2c7)：
Rshc=((RL2-RL1)W)/((α-1)L12)。
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CN107248496A (en) * 2017-06-07 2017-10-13 西安电子科技大学 The modification method of ohmic contact regions square resistance
CN107871792A (en) * 2017-12-12 2018-04-03 苏州阿特斯阳光电力科技有限公司 Photovoltaic cell and corresponding half tone and sheet resistance and/or the measuring method of contact resistivity
CN108170910A (en) * 2017-12-15 2018-06-15 大连理工大学 A kind of semi-conducting electrode ohmic contact resistance parameter extracting method

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Publication number Priority date Publication date Assignee Title
CN107248496A (en) * 2017-06-07 2017-10-13 西安电子科技大学 The modification method of ohmic contact regions square resistance
CN107248496B (en) * 2017-06-07 2019-11-15 西安电子科技大学 The modification method of ohmic contact regions square resistance
CN107871792A (en) * 2017-12-12 2018-04-03 苏州阿特斯阳光电力科技有限公司 Photovoltaic cell and corresponding half tone and sheet resistance and/or the measuring method of contact resistivity
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CN108170910A (en) * 2017-12-15 2018-06-15 大连理工大学 A kind of semi-conducting electrode ohmic contact resistance parameter extracting method

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