CN101840972A - 倒装芯片式半导体光电元件的结构及其制造方法 - Google Patents
倒装芯片式半导体光电元件的结构及其制造方法 Download PDFInfo
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- CN101840972A CN101840972A CN200910119833A CN200910119833A CN101840972A CN 101840972 A CN101840972 A CN 101840972A CN 200910119833 A CN200910119833 A CN 200910119833A CN 200910119833 A CN200910119833 A CN 200910119833A CN 101840972 A CN101840972 A CN 101840972A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
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Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200910119833A CN101840972B (zh) | 2009-03-19 | 2009-03-19 | 倒装芯片式半导体光电元件的结构及其制造方法 |
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CN200910119833A CN101840972B (zh) | 2009-03-19 | 2009-03-19 | 倒装芯片式半导体光电元件的结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101840972A true CN101840972A (zh) | 2010-09-22 |
CN101840972B CN101840972B (zh) | 2012-08-29 |
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CN200910119833A Active CN101840972B (zh) | 2009-03-19 | 2009-03-19 | 倒装芯片式半导体光电元件的结构及其制造方法 |
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Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102446948A (zh) * | 2010-10-12 | 2012-05-09 | 晶元光电股份有限公司 | 发光元件 |
CN102738193A (zh) * | 2011-04-07 | 2012-10-17 | 台湾积体电路制造股份有限公司 | 双基板多结发光二极管阵列结构 |
CN102931313A (zh) * | 2012-08-30 | 2013-02-13 | 厦门市三安光电科技有限公司 | 倒装发光二极管及其制作方法 |
CN103155184A (zh) * | 2010-09-30 | 2013-06-12 | 首尔Opto仪器股份有限公司 | 晶片级发光二极管封装件及其制造方法 |
CN103296153A (zh) * | 2012-05-28 | 2013-09-11 | 傅华贵 | Led芯片封装方法 |
CN103996779A (zh) * | 2014-05-21 | 2014-08-20 | 广东威创视讯科技股份有限公司 | 一种覆晶led器件及其集成cob显示模组 |
CN104221170A (zh) * | 2012-03-19 | 2014-12-17 | 首尔伟傲世有限公司 | 用于分离外延层与生长基板的方法及使用其的半导体器件 |
CN104235775A (zh) * | 2014-09-01 | 2014-12-24 | 重庆四联光电科技有限公司 | 一种集鱼灯光源结构 |
CN104810444A (zh) * | 2015-03-04 | 2015-07-29 | 华灿光电(苏州)有限公司 | 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法 |
CN104979412A (zh) * | 2015-07-08 | 2015-10-14 | 苏州强明光电有限公司 | 太阳能电池外延片和其制作方法 |
CN105047769A (zh) * | 2015-06-19 | 2015-11-11 | 安徽三安光电有限公司 | 一种利用湿法蚀刻进行衬底剥离的发光二极管制备方法 |
CN105355729A (zh) * | 2015-12-02 | 2016-02-24 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN106098877A (zh) * | 2016-08-26 | 2016-11-09 | 广东德力光电有限公司 | 一种ZnO基倒装LED芯片及其制作方法 |
CN109192670A (zh) * | 2018-08-17 | 2019-01-11 | 中国科学院上海微***与信息技术研究所 | 柔性半导体复合薄膜及其制备方法 |
CN110931608A (zh) * | 2019-12-13 | 2020-03-27 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
CN110957407A (zh) * | 2019-12-13 | 2020-04-03 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
CN111063773A (zh) * | 2019-12-13 | 2020-04-24 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
Family Cites Families (4)
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US6573537B1 (en) * | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
JP2004221186A (ja) * | 2003-01-10 | 2004-08-05 | Nanotemu:Kk | 半導体発光装置 |
US6977396B2 (en) * | 2003-02-19 | 2005-12-20 | Lumileds Lighting U.S., Llc | High-powered light emitting device with improved thermal properties |
CN1619842A (zh) * | 2003-11-18 | 2005-05-25 | 璨圆光电股份有限公司 | 一种氮化物发光元件 |
-
2009
- 2009-03-19 CN CN200910119833A patent/CN101840972B/zh active Active
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103155184A (zh) * | 2010-09-30 | 2013-06-12 | 首尔Opto仪器股份有限公司 | 晶片级发光二极管封装件及其制造方法 |
CN102446948B (zh) * | 2010-10-12 | 2014-07-30 | 晶元光电股份有限公司 | 发光元件 |
CN102446948A (zh) * | 2010-10-12 | 2012-05-09 | 晶元光电股份有限公司 | 发光元件 |
CN102738193B (zh) * | 2011-04-07 | 2016-05-04 | 晶元光电股份有限公司 | 双基板多结发光二极管阵列结构 |
CN102738193A (zh) * | 2011-04-07 | 2012-10-17 | 台湾积体电路制造股份有限公司 | 双基板多结发光二极管阵列结构 |
US9882085B2 (en) | 2012-03-19 | 2018-01-30 | Seoul Viosys Co., Ltd. | Method for separating epitaxial layers from growth substrates, and semiconductor device using same |
CN104221170B (zh) * | 2012-03-19 | 2017-02-22 | 首尔伟傲世有限公司 | 用于分离外延层与生长基板的方法及使用其的半导体器件 |
CN104221170A (zh) * | 2012-03-19 | 2014-12-17 | 首尔伟傲世有限公司 | 用于分离外延层与生长基板的方法及使用其的半导体器件 |
CN103296153A (zh) * | 2012-05-28 | 2013-09-11 | 傅华贵 | Led芯片封装方法 |
CN103296153B (zh) * | 2012-05-28 | 2016-06-22 | 傅华贵 | Led芯片封装方法 |
CN102931313B (zh) * | 2012-08-30 | 2014-11-19 | 安徽三安光电有限公司 | 倒装发光二极管及其制作方法 |
CN102931313A (zh) * | 2012-08-30 | 2013-02-13 | 厦门市三安光电科技有限公司 | 倒装发光二极管及其制作方法 |
CN103996779A (zh) * | 2014-05-21 | 2014-08-20 | 广东威创视讯科技股份有限公司 | 一种覆晶led器件及其集成cob显示模组 |
CN104235775A (zh) * | 2014-09-01 | 2014-12-24 | 重庆四联光电科技有限公司 | 一种集鱼灯光源结构 |
CN104810444B (zh) * | 2015-03-04 | 2018-01-09 | 华灿光电(苏州)有限公司 | 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法 |
CN104810444A (zh) * | 2015-03-04 | 2015-07-29 | 华灿光电(苏州)有限公司 | 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法 |
CN105047769A (zh) * | 2015-06-19 | 2015-11-11 | 安徽三安光电有限公司 | 一种利用湿法蚀刻进行衬底剥离的发光二极管制备方法 |
CN105047769B (zh) * | 2015-06-19 | 2017-12-29 | 安徽三安光电有限公司 | 一种利用湿法蚀刻进行衬底剥离的发光二极管制备方法 |
CN104979412A (zh) * | 2015-07-08 | 2015-10-14 | 苏州强明光电有限公司 | 太阳能电池外延片和其制作方法 |
CN105355729B (zh) * | 2015-12-02 | 2018-06-22 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN105355729A (zh) * | 2015-12-02 | 2016-02-24 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN106098877A (zh) * | 2016-08-26 | 2016-11-09 | 广东德力光电有限公司 | 一种ZnO基倒装LED芯片及其制作方法 |
CN109192670A (zh) * | 2018-08-17 | 2019-01-11 | 中国科学院上海微***与信息技术研究所 | 柔性半导体复合薄膜及其制备方法 |
CN110931608A (zh) * | 2019-12-13 | 2020-03-27 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
CN110957407A (zh) * | 2019-12-13 | 2020-04-03 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
CN111063773A (zh) * | 2019-12-13 | 2020-04-24 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
CN110957407B (zh) * | 2019-12-13 | 2021-04-09 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
WO2021115476A1 (zh) * | 2019-12-13 | 2021-06-17 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
WO2021115473A1 (zh) * | 2019-12-13 | 2021-06-17 | 深圳第三代半导体研究院 | 衬底及其制造方法、led及其制造方法 |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Correction of invention patent gazette |
Correction item: Applicant order Correct: First applicant Zhanjing Technology (Shenzhen) Co., Ltd. False: First applicant Advanced Optoelectronic Technology Inc. Number: 35 Volume: 28 |
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CI03 | Correction of invention patent |
Correction item: Order of the patent holder Correct: First applicant Exhibition technology (Shenzhen) Co., Ltd.| Advanced Optoelectronic Technology Inc. False: 1st applicant Wing Chong Energy Technology Co., Ltd The second applicant to show crystal Technology (Shenzhen) Co., Ltd. Number: 35 Page: The title page Volume: 28 |
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ERR | Gazette correction |
Free format text: CORRECT: THE SEQUENCE OF APPLICANTS; FROM: THE FIRST APPLICATOR ADVANCED OPTOELECTRONIC TECHNOLOGY INC. TO: THE FIRST APPLICATOR ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. |
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RECT | Rectification |