JP5450399B2 - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- JP5450399B2 JP5450399B2 JP2010513109A JP2010513109A JP5450399B2 JP 5450399 B2 JP5450399 B2 JP 5450399B2 JP 2010513109 A JP2010513109 A JP 2010513109A JP 2010513109 A JP2010513109 A JP 2010513109A JP 5450399 B2 JP5450399 B2 JP 5450399B2
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- 239000004065 semiconductor Substances 0.000 title claims description 159
- 238000004519 manufacturing process Methods 0.000 title description 20
- 239000010410 layer Substances 0.000 claims description 201
- 230000002093 peripheral effect Effects 0.000 claims description 65
- 239000011241 protective layer Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 35
- 239000002019 doping agent Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
101 ウエハー基板
102 第1導電型半導体層
103 活性層
104 第2導電型半導体層
105 発光構造物
106 周縁溝
107 周縁部保護層
108 反射電極層
109 酸化膜パターン
110 伝導性支持基板
112 第1電極
100A チップ
Claims (10)
- 第1導電型半導体層と、第2導電型半導体層と、前記第1導電型半導体層と前記第2導電型半導体層との間にある活性層とを含む発光構造物と、
前記発光構造物の下にある反射電極層と、
前記反射電極層の下にある伝導性支持基板と、
前記反射電極層の外側に配置された周縁部保護層と、
前記第1導電型半導体層の上の第1電極と、を含み、
前記発光構造物は、該発光構造物の外側領域に形成された周縁溝を含み、該発光構造物の外側領域の第1厚さが該発光構造物の内側領域の第2厚さよりも小さく、
前記周縁溝の幅は10μm〜500μmであり、
前記第1厚さを有する前記外側領域が、前記第2厚さを有する前記内側領域を取り囲むように配置されており、
前記反射電極層は、Ag、Ni、Al、Rh、Pd、Ir、Ru、Mg、Zn、Pt、Au、Hf及びそれらの組み合わせの一つを有する、単層または多層で形成されており、
前記周縁部保護層は、GaN、InN、AlN、InGaN、AlGaN、InAlGaN、AlInNの中の少なくとも一つを含み、n型ドーパント若しくはp型ドーパントでドープされている、またはドーパントがドープされていない半導体発光素子。 - 第1導電型半導体層と、第2導電型半導体層と、前記第1導電型半導体層と前記第2導電型半導体層との間にある活性層とを含む発光構造物と、
前記発光構造物の下にある反射電極層と、
前記反射電極層の下にある伝導性支持基板と、
前記反射電極層の外側に配置された周縁部保護層と、
前記第1導電型半導体層の上の第1電極と、を含み、
前記発光構造物は、該発光構造物の外側領域に形成された周縁溝を含み、該発光構造物の外側領域の第1厚さが該発光構造物の内側領域の第2厚さよりも小さく、
前記周縁溝の幅は10μm〜500μmであり、
前記第1厚さを有する前記外側領域が、前記第2厚さを有する前記内側領域を取り囲むように配置されており、
前記周縁部保護層は、GaN、InN、AlN、InGaN、AlGaN、InAlGaN、AlInNの中の少なくとも一つを含み、n型ドーパント若しくはp型ドーパントでドープされている、またはドーパントがドープされていない半導体発光素子。 - 前記周縁部保護層は、前記第2導電型半導体層と同一材料から形成されている請求項1または2に記載の半導体発光素子。
- 前記周縁部保護層は、前記発光構造物を、前記伝導性支持基板または前記反射電極層から離隔させている請求項1乃至3のいずれか1項に記載の半導体発光素子。
- 前記発光構造物の周縁部にある別途の絶縁膜を更に含む請求項1乃至4のいずれか1項に記載の半導体発光素子。
- 前記周縁部保護層は、前記周縁溝の幅より大きな幅を有する請求項1乃至5のいずれか1項に記載の半導体発光素子。
- 前記周縁部保護層の幅は、20μm〜600μmである請求項1乃至6のいずれか1項に記載の半導体発光素子。
- 前記活性層は、InGaNからなる量子井戸層とGaNからなる量子障壁層とを交互に含んでいることを請求項1乃至7のいずれか1項に記載の半導体発光素子。
- 前記第2導電型半導体層の下にある透明電極層を更に含む請求項1乃至8のいずれか1項に記載の半導体発光素子。
- 前記周縁溝は、前記第1導電型半導体層から、前記第2導電型半導体層または前記周縁部保護層の一部が露出する深さまで、形成されている請求項1乃至9のいずれか1項に記載の半導体発光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070061429A KR100872717B1 (ko) | 2007-06-22 | 2007-06-22 | 발광 소자 및 그 제조방법 |
KR10-2007-0061429 | 2007-06-22 | ||
PCT/KR2008/003437 WO2009002040A2 (en) | 2007-06-22 | 2008-06-18 | Semiconductor light emitting device and method of fabricating the same |
Publications (3)
Publication Number | Publication Date |
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JP2010531058A JP2010531058A (ja) | 2010-09-16 |
JP2010531058A5 JP2010531058A5 (ja) | 2012-02-09 |
JP5450399B2 true JP5450399B2 (ja) | 2014-03-26 |
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JP2010513109A Active JP5450399B2 (ja) | 2007-06-22 | 2008-06-18 | 半導体発光素子及びその製造方法 |
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US (3) | US7989820B2 (ja) |
EP (2) | EP2160772B1 (ja) |
JP (1) | JP5450399B2 (ja) |
KR (1) | KR100872717B1 (ja) |
CN (2) | CN103151439B (ja) |
DE (1) | DE202008018175U1 (ja) |
WO (1) | WO2009002040A2 (ja) |
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Also Published As
Publication number | Publication date |
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US7989820B2 (en) | 2011-08-02 |
EP2160772A4 (en) | 2011-11-16 |
JP2010531058A (ja) | 2010-09-16 |
US8994053B2 (en) | 2015-03-31 |
EP2160772B1 (en) | 2014-09-03 |
WO2009002040A2 (en) | 2008-12-31 |
US20130126899A1 (en) | 2013-05-23 |
WO2009002040A3 (en) | 2009-02-26 |
US20100065872A1 (en) | 2010-03-18 |
EP2816614A1 (en) | 2014-12-24 |
CN101681959A (zh) | 2010-03-24 |
EP2160772A2 (en) | 2010-03-10 |
CN103151439A (zh) | 2013-06-12 |
EP2816614B1 (en) | 2022-05-04 |
DE202008018175U1 (de) | 2011-12-08 |
US20110254041A1 (en) | 2011-10-20 |
KR100872717B1 (ko) | 2008-12-05 |
CN103151439B (zh) | 2016-06-22 |
CN101681959B (zh) | 2013-03-27 |
US8664682B2 (en) | 2014-03-04 |
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