CN102931313B - 倒装发光二极管及其制作方法 - Google Patents
倒装发光二极管及其制作方法 Download PDFInfo
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- CN102931313B CN102931313B CN201210314573.2A CN201210314573A CN102931313B CN 102931313 B CN102931313 B CN 102931313B CN 201210314573 A CN201210314573 A CN 201210314573A CN 102931313 B CN102931313 B CN 102931313B
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- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000002955 isolation Methods 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 238000009413 insulation Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
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- 238000000576 coating method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
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- 238000000605 extraction Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 235000014698 Brassica juncea var multisecta Nutrition 0.000 description 1
- 241000251184 Rajiformes Species 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (11)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210314573.2A CN102931313B (zh) | 2012-08-30 | 2012-08-30 | 倒装发光二极管及其制作方法 |
PCT/CN2013/079843 WO2014032487A1 (zh) | 2012-08-30 | 2013-07-23 | 倒装发光二极管及其制作方法 |
US14/583,185 US9190569B2 (en) | 2012-08-30 | 2014-12-25 | Flip-chip light emitting diode and fabrication method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210314573.2A CN102931313B (zh) | 2012-08-30 | 2012-08-30 | 倒装发光二极管及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102931313A CN102931313A (zh) | 2013-02-13 |
CN102931313B true CN102931313B (zh) | 2014-11-19 |
Family
ID=47646068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210314573.2A Active CN102931313B (zh) | 2012-08-30 | 2012-08-30 | 倒装发光二极管及其制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9190569B2 (zh) |
CN (1) | CN102931313B (zh) |
WO (1) | WO2014032487A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931313B (zh) * | 2012-08-30 | 2014-11-19 | 安徽三安光电有限公司 | 倒装发光二极管及其制作方法 |
CN103247743B (zh) * | 2013-05-24 | 2016-04-20 | 安徽三安光电有限公司 | 贴面式发光器件及其制作方法 |
CN103594569B (zh) * | 2013-11-08 | 2016-02-17 | 溧阳市江大技术转移中心有限公司 | 具有粗化透明电极的倒装发光二极管的制造方法 |
CN104576410A (zh) * | 2014-12-17 | 2015-04-29 | 江苏能华微电子科技发展有限公司 | 一种垂直结构功率半导体器件的衬底转移方法 |
CN105023975B (zh) * | 2015-06-08 | 2017-10-27 | 严敏 | 一种红色倒装晶片的制造方法和红色倒装晶片 |
CA3005049C (en) | 2015-12-04 | 2021-06-08 | Thomas J. Kasun | Embossing for electro discharge textured sheet |
CN107437542B (zh) * | 2017-07-31 | 2023-05-05 | 广东工业大学 | 一种紫外led芯片及其制备方法 |
CN107819065A (zh) * | 2017-10-27 | 2018-03-20 | 广东晶科电子股份有限公司 | 一种倒装led发光器件及其制备方法 |
WO2019140625A1 (zh) * | 2018-01-19 | 2019-07-25 | 厦门市三安光电科技有限公司 | 发光二极管及其制作方法 |
CN108649048A (zh) * | 2018-07-10 | 2018-10-12 | 南方科技大学 | 一种单片集成半导体器件及其制备方法 |
CN109326688B (zh) * | 2018-12-04 | 2023-09-12 | 九江职业技术学院 | 一种双金属层环形叉指电极倒装led芯片及其制作方法 |
CN110212062A (zh) * | 2019-06-20 | 2019-09-06 | 合肥彩虹蓝光科技有限公司 | 一种倒装发光二极管及其制造方法 |
CN111261766A (zh) * | 2020-01-21 | 2020-06-09 | 厦门乾照光电股份有限公司 | 一种倒装薄膜led芯片结构及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101840972A (zh) * | 2009-03-19 | 2010-09-22 | 先进开发光电股份有限公司 | 倒装芯片式半导体光电元件的结构及其制造方法 |
CN201910416U (zh) * | 2011-01-09 | 2011-07-27 | 马春军 | 一种大功率芯片的封装结构及其专用芯片 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324719C (zh) * | 2004-04-01 | 2007-07-04 | 光磊科技股份有限公司 | 一种发光二极管 |
JP2005322722A (ja) * | 2004-05-07 | 2005-11-17 | Korai Kagi Kofun Yugenkoshi | 発光ダイオード |
US20060223211A1 (en) * | 2004-12-02 | 2006-10-05 | The Regents Of The University Of California | Semiconductor devices based on coalesced nano-rod arrays |
WO2006095949A1 (en) * | 2005-03-11 | 2006-09-14 | Seoul Semiconductor Co., Ltd. | Led package having an array of light emitting cells coupled in series |
CN100499189C (zh) * | 2006-09-05 | 2009-06-10 | 武汉迪源光电科技有限公司 | 纯金Au的合金键合LED倒装芯片的制备方法 |
CN102315353B (zh) * | 2011-09-30 | 2013-05-22 | 安徽三安光电有限公司 | 一种倒装集成发光二极管及其制备方法 |
CN102931313B (zh) * | 2012-08-30 | 2014-11-19 | 安徽三安光电有限公司 | 倒装发光二极管及其制作方法 |
-
2012
- 2012-08-30 CN CN201210314573.2A patent/CN102931313B/zh active Active
-
2013
- 2013-07-23 WO PCT/CN2013/079843 patent/WO2014032487A1/zh active Application Filing
-
2014
- 2014-12-25 US US14/583,185 patent/US9190569B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101840972A (zh) * | 2009-03-19 | 2010-09-22 | 先进开发光电股份有限公司 | 倒装芯片式半导体光电元件的结构及其制造方法 |
CN201910416U (zh) * | 2011-01-09 | 2011-07-27 | 马春军 | 一种大功率芯片的封装结构及其专用芯片 |
Non-Patent Citations (1)
Title |
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JP特开2005-322722A 2005.11.17 * |
Also Published As
Publication number | Publication date |
---|---|
WO2014032487A1 (zh) | 2014-03-06 |
CN102931313A (zh) | 2013-02-13 |
US20150115295A1 (en) | 2015-04-30 |
US9190569B2 (en) | 2015-11-17 |
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Owner name: ANHUI SAN AN OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: XIAMEN SAN AN PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20130206 |
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Free format text: CORRECT: ADDRESS; FROM: 361009 XIAMEN, FUJIAN PROVINCE TO: 241000 WUHU, ANHUI PROVINCE |
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Effective date of registration: 20130206 Address after: 241000 Anhui city of Wuhu Province Economic and Technological Development Zone Dong Liang Road No. 8 Applicant after: Anhui San'an Optoelectronics Co., Ltd. Address before: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Applicant before: Xiamen San'an Photoelectric Technology Co., Ltd. |
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