CN101794845A - Method for preparing selective emitter by one-time diffusion - Google Patents
Method for preparing selective emitter by one-time diffusion Download PDFInfo
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- CN101794845A CN101794845A CN201010129510A CN201010129510A CN101794845A CN 101794845 A CN101794845 A CN 101794845A CN 201010129510 A CN201010129510 A CN 201010129510A CN 201010129510 A CN201010129510 A CN 201010129510A CN 101794845 A CN101794845 A CN 101794845A
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Abstract
The invention relates to the technical field of production methods of solar cells, in particular to a method for preparing a selective emitter by one-time diffusion, which sequentially comprises the following process steps: making texture on a silicon wafer, carrying out uniform heavy diffusion, depositing silicon nitride film on the surface of the silicon wafer after diffusing, and printing corrosive slurry in a non-metallic electrode region of the silicon wafer so as to etch the silicon nitride film; and finally, etching the silicon in the non-metallic electrode region with an acid solution or alkali solution to obtain a shallow diffusion region, and the electrode region being a heavy diffusion region. The heavy diffusion process can achieve double-sided gettering, the deposition temperature of the silicon nitride film is low, the whole process is simple and easy to control, the surface is not damaged and has no dead layer, and the cost is low.
Description
Technical field
The present invention relates to the production method technical field of solar cell, relate in particular to a kind of method of preparing selective emitter by one-time diffusion.
Background technology
In order to realize the solar cell high efficiency, various countries' researcher all prepares perfect p-n junction at the exploitation selective emitter solar battery and contacts with desirable, optical loss in the minimizing process and electricity loss.
The present existing method for preparing selective emitter has:
(1) in evenly heavily diffusion and selective corrosion of silicon chip surface.This technology comprises two processes: 1) in evenly heavily diffusion of silicon chip surface, tie darker relatively; 2) electrode before the silk screen printing, after the metallization, non-electrode district is with the very thin one deck of plasma etching, and then selective emitter has also just formed.But the corrosion of the method ionic medium body needs relative complex and expensive equipment, also can be influential to the contact of electrode in the corrosion process.
(2) diffuse to form selective emitter behind the corrosion oxidation film.Earlier at silicon chip surface growth layer of silicon dioxide film, republish the corrosivity slurry, erode away the shape of grid line, carry out phosphorous diffusion again, obtain heavy diffusion region like this, after oxide-film is washed off, carry out shallow diffusion again, obtain highly doped and doped regions like this, this method has been used for industrial production at present, but technology is comparatively complicated.
(3) only at electrode district printing high concentration phosphorus slurry, put into diffusion furnace then and spread.The high concentration phosphorus slurry is printed onto silicon chip surface as the electrode grid wire, then silicon chip is put into diffusion furnace and spread.The high concentration phosphorus slurry deposits to non-Printing Zone from the Printing Zone volatilization in diffusion process.Because volatilization deposition like this obtains the height of phosphorus concentration not as the Printing Zone, so just form the doping of high-concentration and low-concentration, obtain selective emitting electrode structure, but the diffused junction that this method obtains is very uneven, from the near local diffusion concentration height of high concentration phosphorus slurry, local concentration far away is low.
Summary of the invention
The technical problem to be solved in the present invention is: wayward in order to solve the existing method complex process for preparing selective emitter, the production cost height the invention provides a kind of method of preparing selective emitter by one-time diffusion.
The technical solution adopted for the present invention to solve the technical problems is: a kind of method of preparing selective emitter by one-time diffusion, has following processing step successively: earlier with silicon chip making herbs into wool, then evenly heavily spread, the diffusion back is at silicon chip surface cvd nitride silicon thin film, the nonmetal electrode district that then the corrosivity slurry is imprinted on silicon chip is to etch away the silicon nitride film at this place, the silicon that erodes nonmetal electrode district with acid solution or aqueous slkali obtains shallow diffusion region at last, the electrode district diffusion region of promptly attaching most importance to.
Silicon chip is the monocrystalline silicon or the polysilicon of P type or N type, and its resistivity is 0.2～10 Ω cm.
The thickness of silicon nitride film is 30-200nm.
Acid solution is HF acid and HNO
3Mixed solution, wherein the concentration of HF acid is 20-150g/l, HNO
3Concentration is 20-350g/l; Aqueous slkali is KOH solution or NaOH solution, and KOH solution or NaOH solution concentration are 0.1wt%-5wt%; Time with acid solution or aqueous slkali corrosion is 1-30min, and temperature is 5-90 ℃.
The invention has the beneficial effects as follows: heavy diffusion process can two-sided gettering, and the silicon nitride film depositing temperature is low, and whole technical process is simple, control easily, and surperficial not damaged, no dead layer, cost is low.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is a structural representation of the present invention.
1. heavy diffusion regions among the figure, 2. shallow diffusion region, 3. silicon nitride film.
Embodiment
In conjunction with the accompanying drawings, the present invention is further detailed explanation.These accompanying drawings are the schematic diagram of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
As shown in Figure 1, a kind of method of preparing selective emitter by one-time diffusion, has following processing step successively: earlier with silicon chip making herbs into wool, then evenly heavily spread, the diffusion back is at the thick silicon nitride film 3 of silicon chip surface deposition 30-200nm, then the corrosivity slurry is imprinted on the silicon nitride film 3 of nonmetal electrode district to etch away this place of silicon chip, the silicon that erodes nonmetal electrode district with acid solution or aqueous slkali again after the corrosion thing washed off obtains shallow diffusion region 2, follow-up solar battery process can be carried out at last in the electrode district diffusion region 1 of promptly attaching most importance to.Here silicon chip is the monocrystalline silicon or the polysilicon of P type or N type, and its resistivity is 0.2～10 Ω cm.
The preparation of the shallow diffused junction here is to carry out slow etching with acid solution or aqueous slkali counterweight diffusion region, and by the concentration proportioning of control acid solution or aqueous slkali, the time, temperature obtains shallow diffusion region 2.The acid solution here is HF acid and HNO
3Mixed solution, wherein the concentration of HF acid is 20-150g/l, HNO
3Concentration is 20-350g/l; Aqueous slkali is KOH solution or NaOH solution, and KOH solution or NaOH solution concentration are 0.1wt%-5wt%; Time with acid solution or aqueous slkali corrosion is 1-30min, and temperature is 5-90 ℃.By the control solution ratio, reaction temperature and time, corrosion rate can be controlled at about 0.1um/min like this.
The structure of Zhi Bei selective emitter in this way, the surface not damaged, shallow diffusion region 2 surface concentrations are low than two diffusion methods, no dead layer has effectively been avoided the influence to solar cell properties of affected layer and dead layer, and heavily the process of expanding can also play the effect of two-sided gettering simultaneously, technical process is simple in addition, than being easier to control, save pyroprocess one time, reduce heat budget.
Embodiment 1:
Select the p type single crystal silicon sheet, crystal face (100), doping content 2.5 Ω cm.Silicon chip carries out surface wool manufacturing through the normal solar battery process, heavily spreads the square resistance that obtains 25ohm/Sq then.At the SiN film of surface plating 80nm, the corrosivity slurry is printed at non-electrode district in the back, after the etching thing is washed off, is HNO at concentration proportioning
3100g/l, in the solution of HF acid 35g/l, technological temperature is 5 ℃, time is carry out of 5min along with technology, the heavy diffusion region 1 of being blocked by silicon nitride film 3 can slowly not be etched away, total etch thicknesses is 0.6um, removes electrode district SiN Protective film with the 10%HF pickling afterwards, carries out other technology of follow-up normal selectivity diffusion solar cells such as coated with antireflection film, positive backplate printing and sintering again by technological requirement.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and by above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must determine its technical scope according to the claim scope.
Claims (4)
1. the method for a preparing selective emitter by one-time diffusion, it is characterized in that having following processing step successively: earlier with silicon chip making herbs into wool, then evenly heavily spread, the diffusion back is at silicon chip surface cvd nitride silicon thin film, the nonmetal electrode district that then the corrosivity slurry is imprinted on silicon chip is to etch away the silicon nitride film at this place, the silicon that erodes nonmetal electrode district with acid solution or aqueous slkali obtains shallow diffusion region at last, the electrode district diffusion region of promptly attaching most importance to.
2. the method for a kind of preparing selective emitter by one-time diffusion according to claim 1, it is characterized in that: described silicon chip is the monocrystalline silicon or the polysilicon of P type or N type, its resistivity is 0.2～10 Ω cm.
3. the method for a kind of preparing selective emitter by one-time diffusion according to claim 1, it is characterized in that: the thickness of described silicon nitride film is 30-200nm.
4. the method for a kind of preparing selective emitter by one-time diffusion according to claim 1, it is characterized in that: described acid solution is HF acid and HNO
3Mixed solution, wherein the concentration of HF acid is 20-150g/l, HNO
3Concentration is 20-350g/l; Aqueous slkali is KOH solution or NaOH solution, and KOH solution or NaOH solution concentration are 0.1wt%-5wt%; Time with acid solution or aqueous slkali corrosion is 1-30min, and temperature is 5-90 ℃.
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976707A (en) * | 2010-09-17 | 2011-02-16 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Manufacturing technology of crystalline silicon selective emitting electrode solar cell |
| CN102315317A (en) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | Selective emitter electrode solar battery manufacturing process combined with reactive ion etching (RIE) |
| CN102332393A (en) * | 2011-09-28 | 2012-01-25 | 桂林尚科光伏技术有限责任公司 | Diffusion method for prolonging minority carrier lifetime of battery plate in process of manufacturing solar battery |
| CN102394257A (en) * | 2011-11-17 | 2012-03-28 | 浙江向日葵光能科技股份有限公司 | Method for realizing preparation of selective emitter region by utilizing one-time diffusion |
| CN102544198A (en) * | 2011-12-14 | 2012-07-04 | 青岛吉阳新能源有限公司 | Selective emitter junction crystalline silicon solar cell preparation method |
| CN102623555A (en) * | 2012-03-27 | 2012-08-01 | 山东力诺太阳能电力股份有限公司 | Acid method process for preparing dead-layer-free emitting electrode of solar cell |
| CN102623557A (en) * | 2012-03-27 | 2012-08-01 | 山东力诺太阳能电力股份有限公司 | Technology for preparing dead layer-free emitting electrode of solar battery through alkali method |
| CN102629643A (en) * | 2012-04-16 | 2012-08-08 | 中利腾晖光伏科技有限公司 | Manufacturing method of high-square-resistance solar cell |
| CN102709403A (en) * | 2012-07-04 | 2012-10-03 | 中利腾晖光伏科技有限公司 | Maskless etch-back method applicable to selective emitter solar cell |
| CN102779898A (en) * | 2012-06-27 | 2012-11-14 | 友达光电股份有限公司 | Method for manufacturing solar cells |
| CN102842650A (en) * | 2012-09-12 | 2012-12-26 | 英利集团有限公司 | Manufacturing method for N-type solar cell panel and N-type solar cell panel |
| CN103337552A (en) * | 2013-05-31 | 2013-10-02 | 山东力诺太阳能电力股份有限公司 | Solar cell making method having low surface doping concentration emitter electrode structure |
| CN103477450A (en) * | 2011-04-21 | 2013-12-25 | 应用材料公司 | Method of forming P-N junction in solar cell substrate |
| CN103904165A (en) * | 2014-04-21 | 2014-07-02 | 常州天合光能有限公司 | Method for increasing width of mask used in selection emitter manufacturing process |
| CN104022187A (en) * | 2014-06-19 | 2014-09-03 | 常州天合光能有限公司 | Realizing method for selectivity emitter junction structure of N-type crystalline silicon solar cell |
| CN104112794A (en) * | 2014-07-28 | 2014-10-22 | 六安市大宇高分子材料有限公司 | Manufacturing method for selective emitter solar battery |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587919A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Method for manufacturing selective emitter junction of multricrytalline silicon solar cell |
-
2010
- 2010-03-15 CN CN201010129510A patent/CN101794845A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587919A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Method for manufacturing selective emitter junction of multricrytalline silicon solar cell |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976707A (en) * | 2010-09-17 | 2011-02-16 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Manufacturing technology of crystalline silicon selective emitting electrode solar cell |
| CN103477450A (en) * | 2011-04-21 | 2013-12-25 | 应用材料公司 | Method of forming P-N junction in solar cell substrate |
| CN102315317A (en) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | Selective emitter electrode solar battery manufacturing process combined with reactive ion etching (RIE) |
| CN102332393A (en) * | 2011-09-28 | 2012-01-25 | 桂林尚科光伏技术有限责任公司 | Diffusion method for prolonging minority carrier lifetime of battery plate in process of manufacturing solar battery |
| CN102332393B (en) * | 2011-09-28 | 2013-08-14 | 桂林吉阳新能源有限公司 | Diffusion method for prolonging minority carrier lifetime of battery plate in process of manufacturing solar battery |
| CN102394257A (en) * | 2011-11-17 | 2012-03-28 | 浙江向日葵光能科技股份有限公司 | Method for realizing preparation of selective emitter region by utilizing one-time diffusion |
| CN102544198A (en) * | 2011-12-14 | 2012-07-04 | 青岛吉阳新能源有限公司 | Selective emitter junction crystalline silicon solar cell preparation method |
| CN102623557A (en) * | 2012-03-27 | 2012-08-01 | 山东力诺太阳能电力股份有限公司 | Technology for preparing dead layer-free emitting electrode of solar battery through alkali method |
| CN102623555A (en) * | 2012-03-27 | 2012-08-01 | 山东力诺太阳能电力股份有限公司 | Acid method process for preparing dead-layer-free emitting electrode of solar cell |
| CN102629643A (en) * | 2012-04-16 | 2012-08-08 | 中利腾晖光伏科技有限公司 | Manufacturing method of high-square-resistance solar cell |
| CN102629643B (en) * | 2012-04-16 | 2015-07-01 | 中利腾晖光伏科技有限公司 | Manufacturing method of high-square-resistance solar cell |
| CN102779898A (en) * | 2012-06-27 | 2012-11-14 | 友达光电股份有限公司 | Method for manufacturing solar cells |
| CN102709403A (en) * | 2012-07-04 | 2012-10-03 | 中利腾晖光伏科技有限公司 | Maskless etch-back method applicable to selective emitter solar cell |
| CN102709403B (en) * | 2012-07-04 | 2015-09-09 | 中利腾晖光伏科技有限公司 | Be applicable to selective emitter solar battery without mask etch back process |
| CN102842650A (en) * | 2012-09-12 | 2012-12-26 | 英利集团有限公司 | Manufacturing method for N-type solar cell panel and N-type solar cell panel |
| CN103337552A (en) * | 2013-05-31 | 2013-10-02 | 山东力诺太阳能电力股份有限公司 | Solar cell making method having low surface doping concentration emitter electrode structure |
| CN103904165A (en) * | 2014-04-21 | 2014-07-02 | 常州天合光能有限公司 | Method for increasing width of mask used in selection emitter manufacturing process |
| CN104022187A (en) * | 2014-06-19 | 2014-09-03 | 常州天合光能有限公司 | Realizing method for selectivity emitter junction structure of N-type crystalline silicon solar cell |
| CN104022187B (en) * | 2014-06-19 | 2016-08-17 | 常州天合光能有限公司 | The implementation method of the selective emitter junction structure of N-type crystalline silicon solaode |
| CN104112794A (en) * | 2014-07-28 | 2014-10-22 | 六安市大宇高分子材料有限公司 | Manufacturing method for selective emitter solar battery |
| CN104112794B (en) * | 2014-07-28 | 2018-09-14 | 六安市大宇高分子材料有限公司 | A kind of manufacturing method of selective emitter solar battery |
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Open date: 20100804 |