CN102842650A - Manufacturing method for N-type solar cell panel and N-type solar cell panel - Google Patents
Manufacturing method for N-type solar cell panel and N-type solar cell panel Download PDFInfo
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- CN102842650A CN102842650A CN2012103362128A CN201210336212A CN102842650A CN 102842650 A CN102842650 A CN 102842650A CN 2012103362128 A CN2012103362128 A CN 2012103362128A CN 201210336212 A CN201210336212 A CN 201210336212A CN 102842650 A CN102842650 A CN 102842650A
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Abstract
The invention discloses a manufacturing method for an N-type solar cell panel, comprising the following steps of: 1. manufacturing a PN junction on a silicon chip through a diffusion technology; 2. printing corrosion slurry at a non printing electrode area of an emitting electrode on the silicon chip, forming a light doping area; 3. cleaning the area for printing the corrosion slurry; 4. coating a film to the silicon chip and printing the electrode. The manufacturing method for N-type solar cell panel provided by the invention is conducted for the printing operation of the corrosion slurry with a way of silk screen printing, so that the high-low PN junction is formed on the silicon crystal, and the operation is easy to implement and is simple. The invention also provides the N-type solar cell panel, comprising the silicon chip and an electrode printed on the silicon chip; the position which the silicon chip is connected with the electrode is impurity high doping deep diffusion zone, the area adjacent with the impurity high doping deep diffusion zone is impurity low doping shallow diffusion zone, so that the N-type solar cell panel has higher photoelectric conversion efficiency.
Description
Technical field
The present invention relates to photovoltaic industry technology field, more particularly, particularly a kind of manufacture method of N type solar panel and a kind of N type solar panel.
Background technology
Crystal silicon solar batteries is arrived every field by large-scale application, and its good stable property is the basis of its large-scale application with ripe technological process.Wherein 90% of crystal-silicon solar cell is the P type, how further to raise the efficiency, and reducing cost is the elementary object of domestic and international technical field research.Along with the development of technology, N type crystal silicon battery is inefficient high with its cost, more and more receives the attention in market.
Yet the photoelectric conversion efficiency that how to improve N type crystal silicon battery becomes one of research emphasis of this area, and wherein, selective emitting electrode structure becomes N type crystal silicon solar battery and improves one of method of conversion efficiency.
In the prior art, the method that N type crystal silicon battery is made selective emitting electrode structure comprises:
1, mask technique is adopted in boron diffusion during normal process; Light source is disposed according to the mask that need carry out of selective emitter; Make the impurity that is printed on fifty-fifty on the silicon chip overview in the diffusion process, receive the light and heat inequality and cause the zone of spreading depth difference, concentration relative superiority or inferiority difference, but this mode require than higher and complicated operation to mask;
2, electrode district printing high concentration boron slurry; Put into diffusion furnace then and spread, so also can form the distribution of high-concentration and low-concentration, obtain the selective emitter structure; But this method requires rapid diffusion, can not reach the effect of diffusion otherwise the boron slurry of printing can volatilize;
3, utilize the position cutting of laser at emitter printing grid line; Utilize screen printing technique in groove, to be coated with the boron slurry again, the diffusion back just can form highly doped dark diffusion region around cutting, and forms low-doped shallow diffusion region in other places; But this technical costs is high, complex process.
In sum, how a kind of manufacture method of N type solar panel selective emitter is provided, this method is comparatively easy to the operation that N type solar panel is made selective emitting electrode structure, becomes those skilled in the art's problem that needs to be resolved hurrily.
Summary of the invention
The technical problem that the present invention will solve is manufacture method and a kind of N type solar panel that a kind of N type solar panel is provided; This N type solar panel is through using the manufacture method manufacturing of this N type solar panel; The manufacture method technology of this N type solar panel is simple, easy operating.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of N type solar panel, comprise step:
S1, on silicon chip, make PN junction through diffusion technology;
S2, on silicon chip emitter the non-zone printing corrosive slurry that prints electrode, form lightly doped region;
S3, the zone of carrying out the corrosive slurry printing is cleaned;
S4, said silicon chip is carried out the plated film setting, and print electrode.
Preferably, said step S1 comprises step:
S11, employing chemical cleaning are carried out structuring to silicon chip surface and are handled;
S12, carry out phosphorus atoms diffusion and boron atom diffusion respectively in the both sides of said silicon chip.
Preferably, said step S4 comprises step:
S41, insulation processing is carried out in the two sides of said silicon chip;
S42, employing PECVD method are carried out deposition plating to the two sides of said silicon chip;
S43, print electrode and sintering.
The present invention also provides a kind of N type solar panel; Comprise silicon chip and be printed in the silk screen on the said silicon chip; The position that said silicon chip is connected with said silk screen is the highly doped dark diffusion region of impurity, with adjoining zone, the highly doped dark diffusion region of said impurity be the low-doped shallow diffusion region of impurity.
The manufacture method of a kind of N type solar panel provided by the invention comprises step:
S1, making PN junction are made PN junction through diffusion technology on silicon chip; In this step, through in pure silicon crystal, mixing group (like phosphorus, arsenic, antimony etc.), make it to replace the position of silicon atom in the lattice, thereby form N type crystal silicon; In diffusion process, III family element passes through diffusion as deep in the silicon crystal, thereby forms PN junction;
S2, printing corrosive slurry; The non-zone printing corrosive slurry that prints electrode of emitter on silicon chip; Form lightly doped region, be printed onto the non-zone of printing electrode of emitter to corrosive slurry through silk screen, through the corrosiveness of corrosive slurry to silicon crystal; Reduce III family elemental diffusion concentration in the silicon crystal, make it to form lightly doped region;
S3, corrosive slurry clean; Zone to carrying out the corrosive slurry printing is cleaned; Thereby the corrosion scope to corrosive slurry is controlled, and avoids the extent of corrosion of corrosive slurry excessive, and (for example extent of corrosion is excessive to silicon crystal surface formation height PN junction is had a negative impact; The high-concentration dopant district will correspondingly reduce, and the height PN junction forms the zone and will reduce);
S4, print electrode, silicon chip is carried out the plated film setting, and print electrode, in this step, adopt PECVD to carry out the setting of double-sided deposition plated film, so improve the utilance of illumination, improve the photoelectric conversion efficiency of silicon crystal silicon crystal.
The manufacture method of N type solar panel provided by the invention makes silicon crystal form lateral junction P++/N through above-mentioned steps and ties P++/P+ with height.Electrode is produced on the heavily doped zone (P++: the impurity content concentration that expression is mixed is higher) and helps reducing the contact resistance between metal and the pure silicon; Produce good Ohmic contact; The place of illumination is a light doping section; Low surface concentration can make surface passivation effect better bring into play, and has solved the contradiction of the overweight generation " dead layer " of mixing.Summary, the solar cell with said structure can make superfluous majority carrier collected by electrode more easily, reduce the compound of minority carrier thus dramatically, reduce dark current, so short circuit current, open circuit voltage all can obtain increasing.
The manufacture method of N type solar panel provided by the invention adopts the mode of silk screen printing to carry out the printing operation of corrosive slurry, thereby makes and form the height PN junction on the silicon crystal, and this operation is convenient to implement, and is simple to operate.
The present invention also provides a kind of N type solar panel; Comprise silicon chip and be printed in the electrode on the silicon chip; The position that silicon chip is connected with electrode is the highly doped dark diffusion region of impurity, with adjoining zone, the highly doped dark diffusion region of impurity be the low-doped shallow diffusion region of impurity.
From the above; Electrode is produced on the heavily doped zone (P++: the impurity content concentration that expression is mixed is higher) and helps reducing the contact resistance between metal and the pure silicon; Produce good Ohmic contact; The place of illumination is a light doping section, and low surface concentration can make surface passivation effect better bring into play, and has solved the contradiction of the overweight generation " dead layer " of mixing.Adopt the N type solar panel of this structure,, make N type solar panel have higher photoelectric conversion efficiency because contact resistance diminishes, passivation effect is better.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is the embodiment of the utility model, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to the accompanying drawing that provides.
Fig. 1 is the flow chart of the manufacture method of N type solar panel in an embodiment of the present invention;
Fig. 2 is the structural representation of N type solar panel in an embodiment of the present invention;
The corresponding relation of component names and Reference numeral is among Fig. 2:
Silicon chip 1; Electrode 2;
The highly doped dark diffusion region a of impurity; The low-doped shallow diffusion region b of impurity.
Embodiment
Core of the present invention is manufacture method and a kind of N type solar panel that a kind of N type solar panel is provided; This N type solar panel is through using the manufacture method manufacturing of this N type solar panel; This N type solar panel adopts the silk screen printing corrosive slurry to make selective emitting electrode structure; Its manufacture method technology is simple, easy operating.
In order to make those skilled in the art understand technical scheme of the present invention better, the present invention is done further detailed description below in conjunction with accompanying drawing and specific embodiment.
Please refer to Fig. 1, Fig. 1 is the flow chart of the manufacture method of N type solar panel in an embodiment of the present invention.
The invention provides a kind of manufacture method of N type solar panel, can under the comparatively simple implementation condition of technology, N type solar panel be produced in batches.Comprise step:
S1, making PN junction are made PN junction through diffusion technology on silicon chip; In this step, through in pure silicon crystal, mixing group (like phosphorus, arsenic, antimony etc.), make it to replace the position of silicon atom in the lattice, thereby form N type crystal silicon; In diffusion process, III family element passes through diffusion as deep in the silicon crystal, thereby forms PN junction;
S2, printing corrosive slurry; The non-zone printing corrosive slurry that prints electrode of emitter on silicon chip; Form lightly doped region, be printed onto the non-zone of printing electrode of emitter to corrosive slurry through silk screen, through the corrosiveness of corrosive slurry to silicon crystal; Reduce III family elemental diffusion concentration in the silicon crystal, make it to form lightly doped region;
S3, corrosive slurry clean; Zone to carrying out the corrosive slurry printing is cleaned; Thereby the corrosion scope to corrosive slurry is controlled, and avoids the extent of corrosion of corrosive slurry excessive, and (for example extent of corrosion is excessive to silicon crystal surface formation height PN junction is had a negative impact; The high-concentration dopant district will correspondingly reduce, and the height PN junction forms the zone and will reduce);
S4, print electrode, silicon chip is carried out the plated film setting, and print electrode, in this step, adopt PECVD to carry out the setting of double-sided deposition plated film, so improve the utilance of illumination, improve the photoelectric conversion efficiency of silicon crystal silicon crystal.
Those skilled in the art can know, silicon crystal can generate electric current after receiving illumination, and conductive electrode contact with the silicon crystal surface, generate electric current on the silicon crystal and with its derivation, for external equipment collection, use thereby can collect.
The manufacture method of N type solar panel provided by the invention makes silicon crystal form lateral junction P++/N through above-mentioned steps (mainly being the operation through step S2) and ties P++/P+ with height.Electrode is produced on the heavily doped zone (P++: the magazine content concn that expression is mixed is higher) and helps reducing the contact resistance between metal and the pure silicon; Produce good Ohmic contact; The place of illumination is a light doping section; Low surface concentration can make surface passivation effect better bring into play, and has solved the contradiction of the overweight generation " dead layer " of mixing.Summary, the solar cell with said structure can make superfluous majority carrier collected by electrode more easily, reduce the compound of minority carrier thus dramatically, reduce dark current, so short circuit current, open circuit voltage all can obtain increasing.
Through (averaging) after inventor's the test of many times, draw comparing result as shown in the table:
The manufacture method of N type solar panel provided by the invention adopts the mode of silk screen printing to carry out the printing operation of corrosive slurry, thereby makes and form the height PN junction on the silicon crystal, and this operation is convenient to implement, and is simple to operate.
Particularly, step S1, making PN junction are made PN junction through diffusion technology on silicon chip, specifically comprise step:
S11, structuring are handled; Adopting chemical cleaning that silicon chip surface is carried out structuring handles; The purpose of this operation is to improve the clean level on silicon crystal surface, is convenient to the operation of flow, avoids the silicon crystal surface to exist impurity that the doping of group is had a negative impact;
S12, DIFFUSION TREATMENT, the phosphorus atoms diffusion and boron atom diffusion respectively in the both sides of silicon chip, so silicon crystal can form PN junction, makes silicon crystal have light transfer characteristic.
Particularly, step S4, print electrode, silicon chip carried out the plated film setting, and print electrode, comprise step:
S41, insulation processing; Insulation processing is carried out in two sides to silicon chip; The concrete operations of this step are carved the limit for using laser, make to insulate between the two sides of silicon chip, so can effectively avoid the electric current of edge to generate; Silicon crystal itself is exerted an influence (this effect is similar to the damage that internal stress causes metal parts easily), reduce the useful life of silicon crystal;
S42, deposition plating adopt the PECVD method that deposition plating is carried out in the two sides of silicon chip;
S43, print electrode, print electrode and sintering, thereby accomplish the manufacturing of N type solar panel.
Please refer to Fig. 2, Fig. 2 is the structural representation of N type solar panel in an embodiment of the present invention.
The present invention also provides a kind of N type solar panel; Comprise silicon chip 1 and be printed in the electrode 2 on the silicon chip; The position that silicon chip 1 is connected with electrode 2 is the highly doped dark diffusion region a of impurity, with the adjoining zone of the highly doped dark diffusion region a of impurity be the low-doped shallow diffusion region b of impurity.
From the above; Electrode is produced on the heavily doped zone (P++: the impurity content concentration that expression is mixed is higher) and helps reducing the contact resistance between metal and the pure silicon; Produce good Ohmic contact; The place of illumination is a light doping section, and low surface concentration can make surface passivation effect better bring into play, and has solved the contradiction of the overweight generation " dead layer " of mixing.Adopt the N type solar panel of this structure,, make N type solar panel have higher photoelectric conversion efficiency because contact resistance diminishes, passivation effect is better.
More than manufacture method and a kind of N type solar panel of a kind of N type solar panel provided by the present invention carried out detailed introduction.Used concrete example among this paper principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.
Claims (4)
1. the manufacture method of a N type solar panel is characterized in that, comprising:
Step 1, on silicon chip, make PN junction through diffusion technology;
Step 2, on silicon chip emitter the non-zone printing corrosive slurry that prints electrode, form lightly doped region;
Step 3, the zone of carrying out the corrosive slurry printing is cleaned;
Step 4, said silicon chip is carried out the plated film setting, and print electrode.
2. the manufacture method of N type solar panel according to claim 1 is characterized in that, said step 1 comprises:
Step 11, employing chemical cleaning are carried out structuring to silicon chip surface and are handled;
Step 12, carry out respectively in the both sides of said silicon chip phosphorus atoms diffusion and boron atom diffusion.
3. the manufacture method of N type solar panel according to claim 1 is characterized in that, said step 4 comprises:
Step 41, insulation processing is carried out in the two sides of said silicon chip;
Step 42, employing PECVD method are carried out deposition plating to the two sides of said silicon chip;
Step 43, print electrode and sintering.
4. a N type solar panel comprises silicon chip (1) and is printed in the electrode (2) on the said silicon chip (1), it is characterized in that,
The position that said silicon chip (1) is connected with said electrode (2) is the highly doped dark diffusion region of impurity (a), with adjoining zone, the highly doped dark diffusion region of said impurity (a) be the low-doped shallow diffusion region of impurity (b).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456842A (en) * | 2013-09-13 | 2013-12-18 | 英利集团有限公司 | Testing method of preparation technology of N-type solar cell selective back surface field |
| CN110993744A (en) * | 2019-12-26 | 2020-04-10 | 浙江晶科能源有限公司 | Preparation method of P-type passivated contact battery |
Citations (4)
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| US7179987B2 (en) * | 2000-05-03 | 2007-02-20 | Universitat Konstanz | Solar cell and method for making |
| CN101794845A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for preparing selective emitter by one-time diffusion |
| CN101937941A (en) * | 2010-08-26 | 2011-01-05 | 常州天合光能有限公司 | Method for manufacturing crystalline silicon solar cell selective emitter junction |
| CN102394257A (en) * | 2011-11-17 | 2012-03-28 | 浙江向日葵光能科技股份有限公司 | Method for realizing preparation of selective emitter region by utilizing one-time diffusion |
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2012
- 2012-09-12 CN CN2012103362128A patent/CN102842650A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7179987B2 (en) * | 2000-05-03 | 2007-02-20 | Universitat Konstanz | Solar cell and method for making |
| CN101794845A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for preparing selective emitter by one-time diffusion |
| CN101937941A (en) * | 2010-08-26 | 2011-01-05 | 常州天合光能有限公司 | Method for manufacturing crystalline silicon solar cell selective emitter junction |
| CN102394257A (en) * | 2011-11-17 | 2012-03-28 | 浙江向日葵光能科技股份有限公司 | Method for realizing preparation of selective emitter region by utilizing one-time diffusion |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456842A (en) * | 2013-09-13 | 2013-12-18 | 英利集团有限公司 | Testing method of preparation technology of N-type solar cell selective back surface field |
| CN110993744A (en) * | 2019-12-26 | 2020-04-10 | 浙江晶科能源有限公司 | Preparation method of P-type passivated contact battery |
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Application publication date: 20121226 |