CN102623555A - Acid method process for preparing dead-layer-free emitting electrode of solar cell - Google Patents
Acid method process for preparing dead-layer-free emitting electrode of solar cell Download PDFInfo
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- CN102623555A CN102623555A CN2012100838791A CN201210083879A CN102623555A CN 102623555 A CN102623555 A CN 102623555A CN 2012100838791 A CN2012100838791 A CN 2012100838791A CN 201210083879 A CN201210083879 A CN 201210083879A CN 102623555 A CN102623555 A CN 102623555A
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Abstract
The invention belongs to the technical field of crystalline silicon solar cell manufacturing, and particularly relates to an acid method process for preparing a dead-layer-free emitting electrode of a solar cell. Firstly, an emitting electrode is prepared by adopting a traditional diffusion method, and a dead layer emitter region doped with higher concentration is corroded through HNO3 and HF solutions in a certain concentration, so as to prepare the dead-layer-free emitting electrode with excellent performance. The process can effectively remove the dead-layer emitter region on the surface of the cell, improves the shortwave response of the solar cell, reduces dark current, effectively improves the open-circuit voltage of the cell and is easy for industrial production.
Description
Technical field
The invention belongs to the manufacture technology field of crystal-silicon solar cell, be specifically related to a kind of acid system and prepare the technology that solar cell does not have the dead layer emitter.
Background technology
Along with the exhaustion of fossil energy, solar cell is developed as a kind of green energy resource fast.Crystal-silicon solar cell becomes the main flow in present solar cell field, how to reduce the cost of solar cell, and the efficient that improves solar cell becomes the emphasis of domestic and international crystal-silicon solar cell research.
Emitter is as the key components of solar cell, and its surface doping concentration directly influences the efficient of solar cell.Because work as doping content greater than 10
20/ cm
3The time, will become the dead layer district, therefore, through reducing the doping content of emitter surface, improve of the response of battery sheet, and reduce dark current short-wave band, improve open circuit voltage, become the main method of present raising battery efficiency.Yet the preparation of traditional emitter, the doping content of silicon chip surface all is higher than 10
20/ cm
3, therefore the surface can form the dead layer district of tens nanometers, influences the efficient of battery.
Summary of the invention
The object of the invention is exactly that the defective that is directed against above-mentioned existence provides a kind of acid system to prepare the technology that solar cell does not have the dead layer emitter, and this technology adopts conventional diffusion earlier, adopts certain density HNO then
3With HF solution; The method that the dead layer district that doping content is higher etches away, preparation has the no dead layer emitter of premium properties, and the present invention can remove the dead layer emitter region on battery sheet surface effectively; Improve the short wave response of solar cell; Reduce dark current, effectively improve the open circuit voltage of battery sheet, and be easy to suitability for industrialized production.
Technical scheme of the present invention is that a kind of acid system prepares the technology that solar cell does not have the dead layer emitter, may further comprise the steps:
(1) with the silicon chip after the making herbs into wool, put into diffusion furnace, spreading the preparation junction depth is the emitter of 150-500nm, and side's resistance is 20-80ohm/sq.
(2) will accomplish the silicon chip of diffusion, put into HNO
3In HF solution, soak 1-30min, the resistance of preparation side is the no dead layer emitter of 50-150ohm/sq; Described HNO
3Be 5-15 ℃ with the temperature of HF solution, wherein HNO
3Concentration be 20-500g/L, the concentration of HF is 5-200g/L.
(3) will remove the silicon chip of dead layer emitter, putting into concentration earlier is 1-5%KOH solution, cleaned 0.5-5 minutes, and then to put into concentration is that 5-15% HCl and concentration are that 2%-10% HF acid mixed solution cleaned 0.5-5 minutes.After the cleaning, the doping content of emitter surface is lower than 10
20/ cm
3
Silicon chip of the present invention is polycrystalline or type monocrystalline silicon.
Beneficial effect of the present invention is: a kind of acid system of the present invention prepares the technology that solar cell does not have the dead layer emitter, and this technology adopts conventional diffusion earlier, adopts certain density HNO then
3With HF solution, the method that the dead layer emitter region that doping content is higher etches away, preparation has the no dead layer emitter of premium properties; Its operation comprises; The preparation of the legacy transmission utmost point, nitric acid and hydrofluoric acid solution etch away and contain doped source silex glass and highly doped dead layer emitter region, clean.The present invention is applied to polycrystalline or sour making herbs into wool class monocrystalline silicon, can remove the dead layer emitter region on battery sheet surface effectively, improves the short wave response of solar cell, reduces dark current, effectively improves the open circuit voltage of battery sheet, and is easy to suitability for industrialized production.
Description of drawings:
Shown in Figure 1 is crystalline silicon conventional diffusion structural representation;
Shown in Figure 2 do not have dead layer emitter structure sketch map for the present invention;
Among the figure, 1. diffuse source atom 2. contains the silex glass of doped source, and 3. the dead layer emitter does not 4. have the dead layer emitter, 5. silicon chip.
Embodiment:
In order to understand the present invention better, specify technical scheme of the present invention below in conjunction with accompanying drawing, but the present invention is not limited thereto.
The present invention is that a kind of acid system prepares the technology that solar cell does not have the dead layer emitter, and technical scheme comprises following processing step: the preparation of conventional diffusion emitter, nitric acid and hydrofluoric acid solution etch away silex glass 2 and the highly doped dead layer emitter 3 that contains doped source, clean.
Concrete steps are:
(1) with the silicon chip after the making herbs into wool 5, put into diffusion furnace, spreading the preparation junction depth is the emitter of 150-500nm, and side's resistance is 20-80ohm/sq.
(2) will accomplish the silicon chip 5 of diffusion, put into HNO
3In HF solution, soak 1-30min, the resistance of preparation side is the no dead layer emitter 4 of 50-150ohm/sq; Described HNO
3Be 5-15 ℃ with the temperature of HF solution, wherein HNO
3Concentration be 20-500g/L, the concentration of HF is 5-200g/L.
(3) will remove the silicon chip 5 of dead layer emitter 3, putting into concentration earlier is 1-5%KOH solution, cleaned 0.5-5 minutes, and then to put into concentration is that 5-15% HCl and concentration are that 2%-10% HF acid mixed solution cleaned 0.5-5 minutes.After the cleaning, the doping content on no dead layer emitter 4 surfaces is lower than 10
20/ cm
3
With the P type polysilicon chip 5 after the sour making herbs into wool cleaning, to put into tubular diffusion furnace and spread, diffuse source atom 1 gets into silicon chip 5, and side's resistance of emitter is 30ohm/sq; To accomplish the silicon chip 5 of diffusion then; Put into the HF acid mixed solution that HNO3 that concentration is 210g/L and concentration are 55g/L; The temperature of solution is controlled at 7 ℃; Soak 50s, etch away the silex glass 2 and the highly doped dead layer emitter 3 that contain doped source, the side's of obtaining resistance is the no dead layer emitter 4 of 70ohm/sq; It is 3% KOH solution that the silicon chip of removing dead layer emitter 35 is put into concentration, soaks 30s; And then with silicon chip 5 to get into concentration be 10% HCl and concentration is in 6% the HF acid mixed solution, immersion 30s; To accomplish the silicon chip 5 that cleans at last, accomplish edge isolation successively, the antireflective coating deposition, printing, technologies such as sintering obtain solar cell piece, and its average light photoelectric transformation efficiency can reach 17.1%.
With the P type V-type class monocrystalline silicon piece 5 after the sour making herbs into wool cleaning, to put into tubular diffusion furnace and spread, diffuse source atom 1 gets into silicon chip 5, and side's resistance of emitter is 25ohm/sq; To accomplish the silicon chip 5 of diffusion then; Put into the HF acid mixed solution that HNO3 that concentration is 210g/L and concentration are 55g/L; The temperature of solution is controlled at 7 ℃; Soak 70s, etch away the silex glass 2 and the highly doped dead layer emitter 3 that contain doped source, the side's of obtaining resistance is the no dead layer emitter 4 of 68ohm/sq; It is 3% KOH solution that the silicon chip of removing dead layer emitter 35 is put into concentration, soaks 30s; And then with silicon chip 5 to get into concentration be 10% HCl and concentration is in 6% the HF acid mixed solution, immersion 30s; To accomplish the silicon chip 5 that cleans at last, accomplish edge isolation successively, the antireflective coating deposition, printing, technologies such as sintering obtain solar cell piece, and its average light photoelectric transformation efficiency can reach 17.23%.
Claims (3)
1. an acid system prepares the technology that solar cell does not have the dead layer emitter, it is characterized in that, may further comprise the steps:
(1) with the silicon chip after the making herbs into wool, put into diffusion furnace, spread the emitter that junction depth is 150-500nm, side's resistance is 20-80ohm/sq;
(2) will accomplish the silicon chip of diffusion, put into HNO
3In HF solution, soak 1-30min, the resistance of preparation side is the emitter of 50-150ohm/sq;
(3) silicon chip being put into concentration is 1-5%KOH solution, cleaned 0.5-5 minutes, and then to put into concentration is that 5-15% HCl and concentration are that 2%-10% HF acid mixed solution cleaned 0.5-5 minutes.
2. acid system according to claim 1 prepares the technology that solar cell does not have the dead layer emitter, it is characterized in that, and in the described step (2), described HNO
3Be 5-15 ℃ with the temperature of HF solution, wherein the concentration of HNO3 is 20-500g/L, and the concentration of HF is 5-200g/L.
3. acid system according to claim 1 prepares the technology that solar cell does not have the dead layer emitter, it is characterized in that, described silicon chip is polysilicon or type monocrystalline silicon.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100838791A CN102623555A (en) | 2012-03-27 | 2012-03-27 | Acid method process for preparing dead-layer-free emitting electrode of solar cell |
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| CN2012100838791A CN102623555A (en) | 2012-03-27 | 2012-03-27 | Acid method process for preparing dead-layer-free emitting electrode of solar cell |
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| CN2012100838791A Pending CN102623555A (en) | 2012-03-27 | 2012-03-27 | Acid method process for preparing dead-layer-free emitting electrode of solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855243A (en) * | 2012-12-04 | 2014-06-11 | 东方日升新能源股份有限公司 | Manufacturing process of solar cell |
| CN104064630A (en) * | 2014-07-15 | 2014-09-24 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N type IBC solar battery piece |
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| CN101667605A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chip |
| CN101794845A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for preparing selective emitter by one-time diffusion |
| CN101976702A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing process and structure of selective emitter solar cell |
| CN102157613A (en) * | 2011-01-26 | 2011-08-17 | 欧贝黎新能源科技股份有限公司 | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof |
-
2012
- 2012-03-27 CN CN2012100838791A patent/CN102623555A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667605A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chip |
| CN101794845A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for preparing selective emitter by one-time diffusion |
| CN101976702A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing process and structure of selective emitter solar cell |
| CN102157613A (en) * | 2011-01-26 | 2011-08-17 | 欧贝黎新能源科技股份有限公司 | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855243A (en) * | 2012-12-04 | 2014-06-11 | 东方日升新能源股份有限公司 | Manufacturing process of solar cell |
| CN103855243B (en) * | 2012-12-04 | 2016-04-20 | 东方日升新能源股份有限公司 | The manufacturing process of solar battery sheet |
| CN104064630A (en) * | 2014-07-15 | 2014-09-24 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N type IBC solar battery piece |
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Application publication date: 20120801 |