CN101789371B - Cleaning method of semiconductor component - Google Patents
Cleaning method of semiconductor component Download PDFInfo
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- CN101789371B CN101789371B CN2009100458254A CN200910045825A CN101789371B CN 101789371 B CN101789371 B CN 101789371B CN 2009100458254 A CN2009100458254 A CN 2009100458254A CN 200910045825 A CN200910045825 A CN 200910045825A CN 101789371 B CN101789371 B CN 101789371B
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Abstract
The invention discloses a cleaning method of a semiconductor component. The method comprises the following steps of: cleaning the surface of a wafer by using a mixed solution SPM of sulfuric acid and hydrogen peroxide; cleaning the surface of the wafer by using deionized water DI; and cleaning the surface of the wafer by using a mixed solution SCI of hydrogen peroxide and ammonia water. The method can obtain better cleaning effect and improve the surface cleanness of the wafer.
Description
Technical field
The present invention relates to the manufacturing technology of semiconductor components and devices, refer in particular to a kind of cleaning method of semiconductor components and devices.
Background technology
Photoetching (the AA Photo of the active area in the 65nm of semiconductor element manufacturing technology, Active Area Photo) in the technology, usually use a photoresistance (PR, Photo Resist) layer carries out shallow trench isolation from (STI, Shallow Trench Isolation) ditch trench etch, and use SiN as photoetching shade (mask).And in the AA of 45nm manufacturing technology Photo technology, generally use three layers (Tri-layer) to contain the bottom anti-reflection layer of Si (BARC) and carry out the STI etching, thereby guarantee that silicon nitride (SiN) layer can not be damaged as shade.Fig. 1 carries out the etched schematic diagram of STI for using three layers of Si BARC, as shown in Figure 1, when carrying out the STI etching, will be on the SiN layer one deck bottom (Under layer), three layers of Si BARC, one deck PR layer and one deck top layer (Cap layer) successively.Yet, when carrying out the manufacturing of semiconductor element, sometimes some fortuitous events may appear, for example, crystal column surface is residual to have more particle (high particle), above-mentioned particle to be generally that residual Si caused, thereby causes crystal column surface unclean; Perhaps crystal column surface is scratched in manufacture process; Mistake of alignment or the like has perhaps appearred when carrying out the stack of layer, at this moment, and for need reform (rework) technology of the wafer that the problems referred to above occur.
Carry out the etched technology of STI for above-mentioned use one deck PR layer, when reforming technology, generally be to carry out ashing (ash) earlier to handle, and then clean (wet) and handle, thereby the PR layer on the removal SiN layer is realized reforming in the prior art.But, in the 45nm manufacturing technology, owing to used three layers of Si BARC layer, and contain 17% Si in the Si BARC layer, if therefore still use the above-mentioned technology of reforming (promptly carry out ashing treatment earlier and carrying out clean), can't remove the Si in the Si BARC layer fully, thereby at a large amount of Si particle of the remained on surface of wafer, cause the cleannes of crystal column surface lower, the quality of technology thereby final influence is reformed.In addition, in the clean in the prior art, the employed cleaning machine (wet bench) that is generally has a plurality of rinse baths in this cleaning machine, hold corresponding cleaning liquid in each rinse bath, wafer cleans in each rinse bath according to certain cleaning sequence.Because in the above-mentioned processing procedure, cleaning machine need dispose a plurality of rinse baths, and every wafer all need clean in a plurality of rinse baths, therefore makes the operating process more complicated, and cleaning efficiency is not high, and cleaning performance is not good yet.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of cleaning method of semiconductor components and devices, thereby obtains better cleaning effect, has improved the cleannes of crystal column surface.
For achieving the above object, the technical scheme among the present invention is achieved in that
A kind of cleaning method of semiconductor components and devices, this method comprises:
Use the mixed liquor SPM of sulfuric acid and hydrogen peroxide to clean to having three layers of crystal column surface that contains the bottom anti-reflection layer of Si;
Use deionized water DI to clean to having three layers of crystal column surface that contains the bottom anti-reflection layer of Si;
Use the mixed liquor SC1 of hydrogen peroxide and ammoniacal liquor to clean to having three layers of crystal column surface that contains the bottom anti-reflection layer of Si;
When using SPM to clean having three layers of crystal column surface that contains the bottom anti-reflection layer of Si, the temperature during cleaning is 160 ℃, and the time of cleaning is 8 minutes.
The proportioning of described SPM is (2～6): 1.
The proportioning of described SPM is 2: 1.
Among the described SC1, hydrogen peroxide, ammoniacal liquor and water ratio are 1: (1～5): (25～50).
Among the described SC1, hydrogen peroxide, ammoniacal liquor and water ratio are 1: 4: 27.
When using SC1 that crystal column surface is cleaned, the temperature during cleaning is 60 ℃～70 ℃, and the time of cleaning is 5～10 minutes.
Temperature during described the cleaning is 70 ℃, and the time of cleaning is 5 minutes.
Described crystal column surface is cleaned comprises: by the spraying cleaning machine crystal column surface is cleaned.
A kind of cleaning method of semiconductor components and devices is provided among the present invention in summary.In the cleaning method of described semiconductor components and devices, owing to used SPM, DI and SC1 that crystal column surface is cleaned, thus obtain better cleaning effect, improved the cleannes of crystal column surface.
Description of drawings
Fig. 1 carries out the etched schematic diagram of STI for using three layers of Si BARC.
Fig. 2 is the schematic flow sheet of the cleaning method of semiconductor components and devices among the present invention.
Fig. 3 is the schematic diagram of employed spraying cleaning machine among the present invention.
Fig. 4 is the design sketch of the cleaning method of semiconductor components and devices among the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention express clearlyer, the present invention is further described in more detail below in conjunction with drawings and the specific embodiments.
Fig. 2 is the schematic flow sheet of the cleaning method of semiconductor components and devices among the present invention.As shown in Figure 2, the cleaning method of the semiconductor components and devices that is provided among the present invention comprises step as described below:
In this step, will use sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) mixed liquor (SPM) crystal column surface is cleaned, be used to remove photoresist and organic contaminants.The proportioning of employed SPM is generally (2～6): 1; Preferable, the proportioning of employed SPM is 2: 1 (promptly the ratio of sulfuric acid in this mixed liquor and hydrogen peroxide is 2: 1), and wherein, concentration commonly used in the concentration of above-mentioned employed sulfuric acid and hydrogen peroxide and the prior art is consistent, for example, the concentration of employed sulfuric acid is 98%.Temperature when carrying out above-mentioned cleaning is generally 140 ℃～160 ℃, and preferable temperature is 150 ℃; The time of cleaning was generally 8～15 minutes, and the preferable time is 10 minutes.
In this step, will use deionized water (DI) that crystal column surface is cleaned, thus remove in the above-mentioned steps 201 residual on the crystal column surface the mixed liquor of the sulfuric acid that uses and hydrogen peroxide so that proceed the cleaning of step 203 as described below.
In this step, will use hydrogen peroxide (H
2O
2) and ammonium hydroxide (NH
4OH) mixed liquor (SC1 is called standard cleaning liquid again No. 1) cleans crystal column surface, is used to remove the particle and the organic substance of crystal column surface.The chemical ingredients of SC-1 is H
2O
2, NH
4OH and deionized water H
2O, three's proportioning (i.e. H in this mixed liquor
2O
2, NH
4The ratio of OH and deionized water) is generally 1: (1～5): (25～50); Preferable proportioning is 1: 4: 27.Temperature when carrying out above-mentioned cleaning is generally 60 ℃～70 ℃, and preferable temperature is 70 ℃; The time of cleaning was generally 5～10 minutes, and the preferable time is 5 minutes.
In addition, when carrying out above-mentioned steps 201～step 203, employed cleaning equipment promptly in step 201～203, all cleans crystal column surface by described spraying cleaning machine for spraying cleaning machine (Spray Tool).Fig. 3 is the schematic diagram of employed spraying cleaning machine among the present invention.As shown in Figure 3, described spraying cleaning machine comprises that one is sprayed groove 301 and a spray post 302 that is arranged in sprinkling groove 301.When cleaning, multi-disc wafer 303 is stacked in order, flatly be placed in the described sprinkling groove 301, various cleaning fluids in the above-mentioned steps 201～203 by mixing be in charge of mix accordingly and dilute after, be sprayed onto the surface of each wafer 303 respectively a plurality of nozzles on spray post 302 equably, the waste liquid after the cleaning is discharged by discharge outlet 304.By using above-mentioned spraying cleaning machine, can progressively finish cleaning according to the order of above-mentioned steps 201～203 to crystal column surface.Because three above-mentioned cleaning steps all can be undertaken by named order in the same sprinkling groove in above-mentioned spraying cleaning machine, wafer needn't be changed in a plurality of rinse baths, both reduced operation complexity, also avoid the cross pollution between the cleaning fluid in each rinse bath in original cleaning equipment, thereby can obtain better cleaning performance; Simultaneously, owing to can in same sprinkling groove, clean the multi-disc wafer simultaneously, thereby the efficient of cleaning improved greatly.
Fig. 4 is the design sketch of the cleaning method of semiconductor components and devices among the present invention.As shown in Figure 4, being the schematic diagram of crystal column surface behind the cleaning method that uses prior art among Fig. 4 (a), is the schematic diagram of crystal column surface behind the use cleaning method provided by the present invention among Fig. 4 (b).By among Fig. 4 more as can be known, after the cleaning method that is provided in using the present invention cleaned wafer, the cleannes of crystal column surface were greatly improved.
In summary,, can realize cleaning, thereby obtain better cleaning effect, improve the cleannes of crystal column surface, for the quality of the follow-up technology of reforming provides assurance crystal column surface with three layers of Si BARC layer by using above-mentioned cleaning method; Simultaneously, use cleaning method provided by the present invention, also can improve the efficient of cleaning greatly.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the cleaning method of a semiconductor components and devices is characterized in that, this method comprises:
Use the mixed liquor SPM of sulfuric acid and hydrogen peroxide to clean to having three layers of crystal column surface that contains the bottom anti-reflection layer of Si;
Use deionized water DI to clean to having three layers of crystal column surface that contains the bottom anti-reflection layer of Si;
Use the mixed liquor SC1 of hydrogen peroxide and ammoniacal liquor to clean to having three layers of crystal column surface that contains the bottom anti-reflection layer of Si;
When using SPM to clean having three layers of crystal column surface that contains the bottom anti-reflection layer of Si, the temperature during cleaning is 160 ℃, and the time of cleaning is 8 minutes.
2. method according to claim 1 is characterized in that,
The proportioning of described SPM is (2～6): 1.
3. method according to claim 2 is characterized in that: the proportioning of described SPM is 2: 1.
4. method according to claim 1 is characterized in that:
Among the described SC1, hydrogen peroxide, ammoniacal liquor and water ratio are 1: (1～5): (25～50).
5. method according to claim 4 is characterized in that:
Among the described SC1, hydrogen peroxide, ammoniacal liquor and water ratio are 1: 4: 27.
6. method according to claim 1 is characterized in that:
When using SC1 that crystal column surface is cleaned, the temperature during cleaning is 60 ℃～70 ℃, and the time of cleaning is 5～10 minutes.
7. method according to claim 6 is characterized in that:
Temperature during described the cleaning is 70 ℃, and the time of cleaning is 5 minutes.
8. method according to claim 1 is characterized in that, described crystal column surface is cleaned comprises:
By the spraying cleaning machine crystal column surface is cleaned.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100458254A CN101789371B (en) | 2009-01-23 | 2009-01-23 | Cleaning method of semiconductor component |
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|---|---|---|---|
| CN2009100458254A CN101789371B (en) | 2009-01-23 | 2009-01-23 | Cleaning method of semiconductor component |
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| CN101789371A CN101789371A (en) | 2010-07-28 |
| CN101789371B true CN101789371B (en) | 2011-10-05 |
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| CN2009100458254A Active CN101789371B (en) | 2009-01-23 | 2009-01-23 | Cleaning method of semiconductor component |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097526B (en) * | 2010-10-08 | 2012-08-29 | 常州天合光能有限公司 | Surface damage layer cleaning process for crystal silicon RIE texturing |
| CN102468130A (en) * | 2010-11-09 | 2012-05-23 | 无锡华润上华半导体有限公司 | Wet chemical cleaning method |
| CN103480598B (en) * | 2012-06-15 | 2017-02-08 | 无锡尚德太阳能电力有限公司 | Silicon wafer cleaning method for preparing high-efficiency solar cell and cleaning equipment |
| CN102832223B (en) * | 2012-09-06 | 2015-07-08 | 豪威科技(上海)有限公司 | Wafer thinning method |
| CN104190665B (en) * | 2014-08-11 | 2017-02-15 | 厦门润晶光电集团有限公司 | Cleaning device and method used before yellow light coating of large-sized and medium-sized sapphire wafer patterning process |
| CN108559661A (en) * | 2018-04-04 | 2018-09-21 | 济南卓微电子有限公司 | A kind of GPP chip cleaning solution and cleaning |
| CN113894097B (en) * | 2021-09-29 | 2022-08-16 | 广东先导微电子科技有限公司 | Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing |
| CN113956925B (en) * | 2021-11-10 | 2023-06-23 | 重庆臻宝科技股份有限公司 | Metal ion cleaning agent for semiconductor material |
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| CN1920673A (en) * | 2005-08-26 | 2007-02-28 | 大日本网目版制造株式会社 | Resist removing method and resist removing apparatus |
| JP2007067287A (en) * | 2005-09-01 | 2007-03-15 | Sony Corp | Method for stripping resist and resist separating device |
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| CN101789371A (en) | 2010-07-28 |
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