CN113894097B - Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing - Google Patents
Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing Download PDFInfo
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- CN113894097B CN113894097B CN202111155907.1A CN202111155907A CN113894097B CN 113894097 B CN113894097 B CN 113894097B CN 202111155907 A CN202111155907 A CN 202111155907A CN 113894097 B CN113894097 B CN 113894097B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/001—Drying-air generating units, e.g. movable, independent of drying enclosure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application provides a process for cleaning a cadmium zinc telluride single crystal wafer after chemical mechanical polishing, which comprises the following steps: step one, soaking and washing a cadmium zinc telluride single crystal wafer subjected to chemical mechanical polishing by using a solution A; step two, cleaning the surface of the wafer by using a mixture of acid, an oxidant and water; rinsing the surface of the wafer by using deionized water; step four, adopting monobasic or polybasic acid with hydroxyl or carboxyl to clean the wafer; step five, rinsing the surface of the wafer by using deionized water; step six, cleaning the surface of the wafer by adopting a mixed solution of a strong alkali solution and an oxidant; step seven, rinsing the surface of the wafer by using deionized water; step eight, cleaning with inorganic acid; step nine, rinsing the surface of the wafer by using deionized water; and step ten, drying by hot nitrogen, and packaging in nitrogen atmosphere. The method adopts a multi-step cleaning method to remove ions and oxide layers on the surface of the wafer and inhibit the formation of Te simple substance.
Description
Technical Field
The invention relates to the field of cleaning processes of compound semiconductor wafers, in particular to a cleaning process of cadmium zinc telluride single crystal wafers after chemical mechanical polishing.
Background
Cadmium zinc telluride is a group II-VI compound semiconductor with a wide bandgap, can be regarded as a ternary compound semiconductor formed by solid solution of CdTe and ZnTe, and has excellent properties such as a large atomic number, a large bandgap, and high resistivity. The tellurium-zinc-cadmium with different crystal lattices is modulated by adjusting the Zn content in the tellurium-zinc-cadmium, so that the tellurium-zinc-cadmium is completely matched with a tellurium-cadmium-mercury (HgCdTe) material with any component, quasi-homoepitaxy is realized, and the defects caused by lattice mismatch are reduced.
As a substrate material, the surface state of cadmium zinc telluride is required to be ready to use after opening the box. However, the surfaces of the cadmium zinc telluride wafers are polluted and defected by chemical liquid, metal ions, damaged layers, stains, oxides and the like in the processes of slicing, grinding, polishing and the like, so that the surfaces of the cadmium zinc telluride wafers need to be cleaned.
Disclosure of Invention
In view of the problems in the background art, it is an object of the present disclosure to provide a process for cleaning cadmium zinc telluride single crystal wafers after chemical mechanical polishing.
In order to achieve the above object, the present disclosure provides a cleaning process of a cadmium zinc telluride single crystal wafer after chemical mechanical polishing, comprising the following steps: firstly, putting a cadmium zinc telluride single crystal wafer subjected to chemical mechanical polishing into a cleaning device, and performing immersion cleaning by using a solution A; step two, cleaning the surface of the wafer by using a mixture of acid, an oxidant and water; rinsing the surface of the wafer by using deionized water; step four, cleaning the wafer by adopting monobasic or polybasic acid with hydroxyl or carboxyl; step five, rinsing the surface of the wafer by using deionized water; step six, cleaning the surface of the wafer by adopting a mixed solution of a strong alkali solution and an oxidant; step seven, rinsing the surface of the wafer by using deionized water; step eight, cleaning with inorganic acid; step nine, rinsing the surface of the wafer by using deionized water; and step ten, drying by hot nitrogen, and packaging in nitrogen atmosphere.
In some embodiments, in step one, the solution a is selected from a mixed solution of 30% to 60% of diethylolamine or 30% to 60% of triethanolamine, 1% to 10% of tetramethylammonium hydroxide, and 0.05% to 1% of an alkali-resistant penetrating agent.
In some embodiments, in the step one, the immersion cleaning temperature is 50-90 ℃, and the immersion cleaning time is 2-4 min.
In some embodiments, in step two, the acid is selected from at least one of hydrochloric acid, sulfuric acid, hydrofluoric acid, phosphoric acid.
In some embodiments, in step two, the oxidizing agent is selected from hydrogen peroxide.
In some embodiments, in step two, the washing time is 20s to 120 s.
In some embodiments, in the second step, the volume ratio of the acid to the hydrogen peroxide to the water is 1: 20-100.
In some embodiments, in step four, the mono-or poly-basic acid with a hydroxyl or carboxyl group is selected from at least one of malic acid, citric acid and tartaric acid.
In some embodiments, in step four, the malic acid, citric acid and tartaric acid are all at a mass fraction of 3% to 10%.
In some embodiments, in step six, the strong alkaline solution is selected from at least one of sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide.
In some embodiments, in step six, the oxidizing agent is selected from an aqueous hydrogen peroxide solution.
In some embodiments, in step six, the mass fraction of sodium hydroxide is 5% to 15%.
In some embodiments, in the sixth step, the mass fraction of the hydrogen peroxide is 1% to 3%.
In some embodiments, in step six, the washing time is 60s to 120 s.
In some embodiments, in step eight, the inorganic acid solution is selected from at least one of hydrochloric acid, sulfuric acid, hydrofluoric acid, and phosphoric acid.
In some embodiments, in step eight, the mass fraction of the inorganic acid is 1% to 10%.
In some embodiments, in step eight, the washing time is 10s to 60 s.
The beneficial effects of this disclosure are as follows:
according to the cleaning process of the cadmium zinc telluride single crystal wafer after chemical mechanical polishing, ions and oxide layers on the surface of the wafer are removed by adopting a multi-step cleaning method, the formation of a Te simple substance is inhibited, the use of toxic substances such as bromomethanol and the like can be reduced, and the harm to personnel and the environment is avoided.
Detailed Description
The following describes in detail the cleaning process of the cadmium zinc telluride single crystal wafer after chemical mechanical polishing according to the present disclosure.
The application discloses a cleaning process of a cadmium zinc telluride single crystal wafer after chemical mechanical polishing, which comprises the following steps: firstly, putting a cadmium zinc telluride single crystal wafer subjected to chemical mechanical polishing into a cleaning device, and performing immersion cleaning by using a solution A; step two, cleaning the surface of the wafer by using a mixture of acid, an oxidant and water; rinsing the surface of the wafer by using deionized water; step four, cleaning the wafer by adopting monobasic or polybasic acid with hydroxyl or carboxyl; step five, rinsing the surface of the wafer by using deionized water; step six, cleaning the surface of the wafer by adopting a mixed solution of a strong alkali solution and an oxidant; step seven, rinsing the surface of the wafer by using deionized water; step eight, cleaning with inorganic acid; step nine, rinsing the surface of the wafer by using deionized water; and step ten, drying by hot nitrogen, and packaging in nitrogen atmosphere.
In step one, the polishing sheet is rinsed with solution a to remove residual wax on the back side.
In some embodiments, in step one, the solution a is selected from a mixed solution of 30% to 60% of diethylolamine or 30% to 60% of triethanolamine, 1% to 10% of tetramethylammonium hydroxide, and 0.05% to 1% of an alkali-resistant penetrating agent. The alkaline condition can effectively remove wax and pollutants on the surface of the wafer.
In some embodiments, in the step one, the immersion cleaning temperature is 50-90 ℃, and the immersion cleaning time is 2-4 min. The processing efficiency is influenced by long immersion cleaning time; the immersion cleaning time is short and the cleaning is not clean. The cleaning is not clean when the temperature is too low; the amount of water evaporated from the solution will be greater at too high a temperature.
Step two and step six, can inhibit the formation of Te simple substance.
In some embodiments, in step two, the acid is selected from at least one of hydrochloric acid, sulfuric acid, hydrofluoric acid, phosphoric acid.
In the second step, the volume ratio of the acid to the hydrogen peroxide to the water is 1: 20-100.
In some embodiments, in step two, the oxidizing agent is selected from hydrogen peroxide. The hydrogen peroxide is selected as the oxidant because the hydrogen peroxide is a green oxidant, and when the hydrogen peroxide is used as the oxidant, the reduction product is water, so that the pollution is avoided.
In some embodiments, in step two, the washing time is 20s to 120 s. The surface of the wafer is easy to corrode if the cleaning time is too long; too short a cleaning time does not remove contaminants from the wafer surface.
In some embodiments, in step four, the mono-or poly-basic acid with a hydroxyl or carboxyl group is selected from at least one of malic acid, citric acid and tartaric acid. It has carboxyl and hydroxyl groups, and can be used as complexing agent for precipitating metal ions.
In step four, the wafer may also be cleaned with a salt solution of a mono-or polybasic acid.
In some embodiments, in step four, the malic acid, citric acid and tartaric acid are all at a mass fraction of 3% to 10%. If the mass fraction is too high, the solution becomes more acidic and the wafer is corroded.
In the fourth step, the cleaning time is 20-90 s. The surface of the wafer is corroded and the roughness is increased if the cleaning time is too long; too short a cleaning time does not remove ions from the wafer surface.
In some embodiments, in step six, the strong alkaline solution is selected from at least one of sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide.
In some embodiments, in step six, the oxidizing agent is selected from an aqueous hydrogen peroxide solution.
In some embodiments, in step six, the mass fraction of sodium hydroxide is between 5% and 15%. If the mass fraction of sodium hydroxide is too large, the etching rate is too fast, and the roughness of the wafer surface is reduced.
In some embodiments, in the sixth step, the mass fraction of the hydrogen peroxide is 1% to 3%. An oxide layer is formed on the surface of the wafer when the mass fraction of the hydrogen peroxide is too large.
In some embodiments, in step six, the washing time is 60s to 120 s. The tellurium and the zinc are excessively corroded when the cleaning time is too long; the cleaning time is too short to completely remove the tellurium oxide and the zinc oxide.
In some embodiments, in step eight, the inorganic acid solution is selected from at least one of hydrochloric acid, sulfuric acid, hydrofluoric acid, and phosphoric acid.
In some embodiments, in the eighth step, the inorganic acid is present in an amount of 1 to 10% by mass. If the mass fraction of the inorganic acid is too large, the corrosion is too fast, and the reaction speed is uncontrollable.
In some embodiments, in step eight, the washing time is 10s to 60 s. The cleaning time is too short, and the cadmium oxide is difficult to remove; if the cleaning time is too long, excessive corrosion occurs, and the roughness is reduced.
In some embodiments, in step three, in step five, in step seven, and in step nine, the wafer surface is rinsed with deionized water for 30 seconds to 120 seconds each. The wafer is easy to oxidize after being in water for a long time; too short a rinsing time makes it difficult to remove the chemicals from the surface.
[ test procedures and test results ]
Example 1
Firstly, placing a cadmium zinc telluride single crystal wafer subjected to chemical mechanical polishing into a cleaning device, and performing immersion cleaning by using a mixed solution of 50% of diethyl alcohol amine, 5% of tetramethylammonium hydroxide and 0.08% of alkali-resistant penetrating agent to remove wax remaining on the back surface, wherein the temperature is about 80 ℃, and the time is about 3 minutes;
step two, cleaning the surface of the wafer by using a mixture of sulfuric acid, hydrogen peroxide and water in a volume ratio of 1:20, wherein the cleaning time is about 40 s;
rinsing the surface of the wafer by using deionized water for about 70 s;
step four, cleaning the wafer by adopting a malic acid solution, wherein the mass fraction of malic acid is 5%, and the cleaning time is 80 s;
step five, rinsing the surface of the wafer by using deionized water, wherein the rinsing time is about 60 s;
step six, cleaning the surface of the wafer by adopting a mixed liquid of sodium hydroxide and hydrogen peroxide, wherein the mass fraction of the sodium hydroxide is 6%, the mass fraction of the hydrogen peroxide is 1.2%, and the cleaning time is 80 s;
step seven, rinsing the surface of the wafer by using deionized water, wherein the cleaning time is 40 s;
step eight, washing for 40s by using a hydrochloric acid solution with the mass fraction of 3%;
step nine, rinsing the surface of the wafer for 50s by using deionized water;
and step ten, drying by hot nitrogen, and packaging in nitrogen atmosphere.
The surface of the CdZnTe single crystal wafer after chemical mechanical polishing has no defects of dirt, drug mark, liquid medicine and the like.
Example 2
Firstly, placing a cadmium zinc telluride single crystal wafer subjected to chemical mechanical polishing into a cleaning device, and carrying out immersion cleaning by using a mixed solution of 50% of diethyl alcohol amine, 8% of tetramethylammonium hydroxide and 0.03% of alkali-resistant penetrating agent to remove wax remaining on the back surface, wherein the temperature is about 90 ℃ and the time is about 2.5 minutes;
step two, cleaning the surface of the wafer by using a mixture of hydrochloric acid, hydrogen peroxide and water in a ratio of 1:20, wherein the cleaning time is about 30 s;
rinsing the surface of the wafer by using deionized water for about 60 s;
step four, cleaning the wafer by adopting a citric acid solution, wherein the mass fraction of the citric acid solution is 6%, and the cleaning time is 30 s;
step five, rinsing the surface of the wafer by using deionized water, wherein the rinsing time is about 80 s;
step six, cleaning the surface of the wafer by adopting a mixed liquid of sodium hydroxide and hydrogen peroxide, wherein the mass fraction of the sodium hydroxide is 8 percent, the mass fraction of the hydrogen peroxide is 2 percent, and the cleaning time is 70 s;
step seven, rinsing the surface of the wafer by using deionized water, wherein the cleaning time is 40 s;
step eight, cleaning for 20s by using a hydrofluoric acid solution with the mass fraction of 5%;
step nine, rinsing the surface of the wafer for 70s by using deionized water;
and step ten, drying by hot nitrogen, and packaging in nitrogen atmosphere.
The CdZnTe single crystal wafer after chemical mechanical polishing has clean surface and no defects of drug printing, liquid medicine and the like.
Comparative example 1
The wafer surface is cleaned with only a sulfuric acid solution in step two, as in example 1.
The surfaces of the CdZnTe single crystal wafers after the chemical mechanical polishing are not clean.
Comparative example 2
The wafer was cleaned with 15% malic acid by mass in step four, as in example 1.
The surface roughness of the CdZnTe single crystal wafer after chemical mechanical polishing is increased.
Comparative example 3
The hydrogen peroxide in the sixth step is replaced by sodium hypochlorite, and the rest is the same as in example 1.
Chlorine gas can be released in the corrosion process of the cadmium zinc telluride single crystal wafer after chemical mechanical polishing, and the chlorine gas is harmful to human bodies.
Comparative example 4
The process of step eight is the same as that of example 1 except that a 20% hydrochloric acid solution is used.
The surface roughness of the CdZnTe single crystal wafer after chemical mechanical polishing is increased.
The above-disclosed features are not intended to limit the scope of practice of the present disclosure, and therefore, all equivalent variations that are described in the claims of the present disclosure are intended to be included within the scope of the claims of the present disclosure.
Claims (8)
1. A cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing is characterized by comprising the following steps:
firstly, putting a cadmium zinc telluride single crystal wafer subjected to chemical mechanical polishing into a cleaning device, and performing immersion cleaning by using a solution A;
step two, cleaning the surface of the wafer by using a mixture of acid, an oxidant and water;
rinsing the surface of the wafer by using deionized water;
step four, cleaning the wafer by adopting monobasic or polybasic acid with hydroxyl or carboxyl;
step five, rinsing the surface of the wafer by using deionized water;
step six, cleaning the surface of the wafer by adopting a mixed solution of a strong alkali solution and an oxidant;
step seven, rinsing the surface of the wafer by using deionized water;
step eight, cleaning with inorganic acid;
step nine, rinsing the surface of the wafer by using deionized water;
step ten, drying by hot nitrogen, and packaging in nitrogen atmosphere;
in the first step, the solution A is selected from a mixed solution of 30-60% of diethylolamine or 30-60% of triethanolamine, 1-10% of tetramethylammonium hydroxide and 0.05-1% of alkali-resistant penetrating agent;
in the first step, the immersion cleaning temperature is 50-90 ℃, and the immersion cleaning time is 2-4 min;
in the second step, the acid is at least one selected from hydrochloric acid, sulfuric acid, hydrofluoric acid and phosphoric acid;
in the second step, the oxidant is selected from hydrogen peroxide.
2. The process according to claim 1, wherein the wafer is a CdZnTe single crystal wafer,
in the second step, the cleaning time is 20-120 s.
3. The process according to claim 1, wherein the wafer is a CdZnTe single crystal wafer,
in step two, the reaction is carried out with an acid: hydrogen peroxide: the volume ratio of water =1:1: 20-100.
4. The process according to claim 1, wherein the wafer is a CdZnTe single crystal wafer,
in step four, the mono-or polybasic acid with hydroxyl or carboxyl is selected from at least one of malic acid, citric acid and tartaric acid.
5. The process of cleaning a cadmium zinc telluride single crystal wafer after chemical mechanical polishing as set forth in claim 4,
in the fourth step, the mass fractions of the malic acid, the citric acid and the tartaric acid are all 3% -10%.
6. The process according to claim 1, wherein the wafer is a CdZnTe single crystal wafer,
in the sixth step, the strong alkali solution is at least one selected from sodium hydroxide, potassium hydroxide and tetramethyl ammonium hydroxide;
in step six, the oxidizing agent is selected from an aqueous hydrogen peroxide solution.
7. The process according to claim 6, wherein the wafer is a CdZnTe single crystal wafer,
in the sixth step, the mass fraction of the sodium hydroxide is 5-15%;
in the sixth step, the mass fraction of the hydrogen peroxide is 1 to 3 percent;
in the sixth step, the cleaning time is 60-120 s.
8. The process according to claim 1, wherein the wafer is a CdZnTe single crystal wafer,
in the eighth step, the inorganic acid solution is at least one selected from hydrochloric acid, sulfuric acid, hydrofluoric acid and phosphoric acid;
in the eighth step, the mass fraction of the inorganic acid is 1-10%;
in the eighth step, the cleaning time is 10s to 60 s.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269177A (en) * | 1999-03-19 | 2000-09-29 | Matsushita Electric Ind Co Ltd | Cleaning method of semiconductor |
| CN101479831A (en) * | 2006-06-28 | 2009-07-08 | 朗姆研究公司 | Post etch wafer surface cleaning with liquid meniscus |
| CN101789371A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of semiconductor component |
| WO2012048534A1 (en) * | 2010-10-15 | 2012-04-19 | 北京通美晶体技术有限公司 | Process for cleaning compound semiconductor wafer |
| CN102500573A (en) * | 2011-11-08 | 2012-06-20 | 哈尔滨工业大学 | Method for cleaning alpha-Al2O3 monocrystal |
| CN102974565A (en) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for cleaning monocrystalline silicon polished wafer |
| CN103072073A (en) * | 2012-12-13 | 2013-05-01 | 天津中环领先材料技术有限公司 | Polishing process capable of maintaining long service life of silicon wafer polished section minority carrier |
| CN106910674A (en) * | 2017-03-02 | 2017-06-30 | 东莞市天域半导体科技有限公司 | A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual |
| CN107384218A (en) * | 2017-06-29 | 2017-11-24 | 华中光电技术研究所（中国船舶重工集团公司第七七研究所） | The polishing fluid and polishing method of a kind of Cdl-x_Znx_Te |
| CN110299287A (en) * | 2019-06-24 | 2019-10-01 | 上海大学 | The processing of surface polishing method of tellurium zincium vestalium thin-film |
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130252427A1 (en) * | 2012-03-26 | 2013-09-26 | Sunpreme, Ltd. | Method for cleaning textured silicon wafers |
-
2021
- 2021-09-29 CN CN202111155907.1A patent/CN113894097B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269177A (en) * | 1999-03-19 | 2000-09-29 | Matsushita Electric Ind Co Ltd | Cleaning method of semiconductor |
| CN101479831A (en) * | 2006-06-28 | 2009-07-08 | 朗姆研究公司 | Post etch wafer surface cleaning with liquid meniscus |
| CN101789371A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of semiconductor component |
| WO2012048534A1 (en) * | 2010-10-15 | 2012-04-19 | 北京通美晶体技术有限公司 | Process for cleaning compound semiconductor wafer |
| CN102500573A (en) * | 2011-11-08 | 2012-06-20 | 哈尔滨工业大学 | Method for cleaning alpha-Al2O3 monocrystal |
| CN102974565A (en) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for cleaning monocrystalline silicon polished wafer |
| CN103072073A (en) * | 2012-12-13 | 2013-05-01 | 天津中环领先材料技术有限公司 | Polishing process capable of maintaining long service life of silicon wafer polished section minority carrier |
| CN106910674A (en) * | 2017-03-02 | 2017-06-30 | 东莞市天域半导体科技有限公司 | A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual |
| CN107384218A (en) * | 2017-06-29 | 2017-11-24 | 华中光电技术研究所（中国船舶重工集团公司第七七研究所） | The polishing fluid and polishing method of a kind of Cdl-x_Znx_Te |
| CN110299287A (en) * | 2019-06-24 | 2019-10-01 | 上海大学 | The processing of surface polishing method of tellurium zincium vestalium thin-film |
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
Non-Patent Citations (2)
| Title |
|---|
| CdZnT e晶片表面化学抛光研究;汪晓芹等;《人工晶体学报》;20051030;第34卷(第05期);第790-804页 * |
| 碲锌镉衬底在CMP后的清洗控制方案探讨;张峰，孟超，谢振民;《山西电子技术》;20210630(第3期);第82-85页 * |
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