CN101093363A - Cleaning liquid in use for removing photoresist on integrate circuit - Google Patents
Cleaning liquid in use for removing photoresist on integrate circuit Download PDFInfo
- Publication number
- CN101093363A CN101093363A CN 200610014415 CN200610014415A CN101093363A CN 101093363 A CN101093363 A CN 101093363A CN 200610014415 CN200610014415 CN 200610014415 CN 200610014415 A CN200610014415 A CN 200610014415A CN 101093363 A CN101093363 A CN 101093363A
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- Prior art keywords
- cleaning fluid
- integrated circuit
- hydrogen peroxide
- cleaning liquid
- etching glue
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
A cleaning liquid used for removing off photoresist of integrated circuit consists of composite chelant of 5-10%, oxydol of 3-8% and allowance of deionized water. It is featured as using mixture of azanol in 2-10 shares and hydra mine in 1 share as composite chelant and setting concentration of oxydol to be 3-30%.
Description
(1) technical field
The present invention relates to a kind of cleaning fluid of semiconductor wafer, particularly a kind of cleaning fluid that is used to remove integrated circuit (IC) etching glue.
(2) background technology
In ic processing, need make with photoresist, after process is finished, again photoresist is removed.Plasma ashing is carried out in the removal of integrated circuit (IC) etching glue usually earlier, and then adopts wet-cleaned, so that remove because organism and the polymer residue that plasma ashing produces.The cleaning fluid of wet-cleaned use at present has two kinds: SPM and SPM.The SPM cleaning fluid is the potpourri of sulfuric acid and hydrogen peroxide; The APM cleaning fluid is the potpourri of ammonium hydroxide, hydrogen peroxide and water.Cleaning equipment generally adopts batch processing to immerse equipment or batch processing spraying apparatus; When adopting the said equipment to clean, cleaning fluid recycles after filtering usually.Along with the develop rapidly of semiconductor technology,, cleaning fluid is had higher requirement at the aspects such as polytrope, low cost and non-environmental-pollution that adapt to designs.With the semiconductor devices is example, during in design 65 nanometers and with the integrated circuit of lower node, needs thinner gate dielectric layer, just develops towards the direction of high dielectric material at present, and this just requires higher cleaning performance, particularly few contaminant metal ions.And no matter traditional cleaning fluid is SPM cleaning fluid or APM cleaning fluid, all contains metallic ion, and they have negative effect to the electric property of new-type grid structure, cleans the content of back contaminant metal ions, substandard requirement far away; Traditional cleaning fluid also can cause the loss of more oxide loss and silicon simultaneously.In addition, because cleaning fluid recycles after filtering, its component all can have a negative impact to cleaning performance and device electric property in continuous variation in the time of from bringing into use to be replaced.Traditional cleaning fluid is in the cleaning of removing integrated circuit (IC) etching glue, and water loss is very big, and its chemical reagent composition that contains can cause environmental pollution.
(3) summary of the invention
The objective of the invention is shortcoming, a kind of cleaning fluid that is used to remove integrated circuit (IC) etching glue with high-performance, non-metal ion, pollution-free and good cleaning performance is provided at above-mentioned conventional clean liquid
Technical scheme of the present invention:
A kind of cleaning fluid that is used to remove integrated circuit (IC) etching glue is characterized in that: be made up of compound sequestrant, hydrogen peroxide and deionized water; The shared percentage by weight of various compositions is: compound sequestrant 5～10%; Hydrogen peroxide 3～8%; Deionized water is a surplus.
Compound sequestrant of the present invention is the potpourri of azanol and hydramine; Its blending ratio is (2～10): 1.
The concentration of hydrogen peroxide of the present invention is 3～30%.
Advantage of the present invention is: 1, the sequestrant that uses of this cleaning fluid metal ion not, can not cause metal ion pollution, and metallic ion is had stronger removal function; 2, reduced the loss of oxide loss and silicon; 3, cleaning fluid composition is stable, guarantees excellent cleaning effect 4, reduces the water consumption, helps environmental protection; 5, technology is simple, and cost is low.
(4) embodiment
Embodiment 1:
A kind of cleaning fluid that is used to remove integrated circuit (IC) etching glue, compound sequestrant, the concentration that is mixed by second hydroxy-ethylenediamine and triethanolamine are that 10% hydrogen peroxide and deionized water are formed; The shared percentage by weight of various compositions: compound sequestrant accounts for 8%; Hydrogen peroxide 6%; Deionized water is a surplus; In the compound sequestrant, second hydroxy-ethylenediamine and triethanolamine blending ratio are 4: 1.Use this cleaning fluid to remove integrated circuit (IC) etching glue, cleaning performance is good.
Embodiment 2:
A kind of cleaning fluid that is used to remove integrated circuit (IC) etching glue, by the compound sequestrant that tetrahydroxyethy-lethylenediamine and diethanolamine mix, concentration is 15% hydrogen peroxide and deionized water composition; The shared percentage by weight of various compositions: compound sequestrant 5%; Hydrogen peroxide 8%; Deionized water is a surplus; In the compound sequestrant, tetrahydroxyethy-lethylenediamine and diethanolamine blending ratio are 8: 1.Use this cleaning fluid to remove integrated circuit (IC) etching glue, cleaning performance is good.
Claims (3)
1. a cleaning fluid that is used to remove integrated circuit (IC) etching glue is characterized in that: be made up of compound sequestrant, hydrogen peroxide and deionized water; The shared percentage by weight of various compositions is: compound sequestrant 5～10%; Hydrogen peroxide 3～8%; Deionized water is a surplus.
2. the cleaning fluid that is used to remove integrated circuit (IC) etching glue according to claim 1 is characterized in that: compound sequestrant is the potpourri of azanol and hydramine; Its blending ratio is (2～10): 1.
3. the cleaning fluid that is used to remove integrated circuit (IC) etching glue according to claim 1 is characterized in that: the concentration of hydrogen peroxide is 3～30%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610014415 CN101093363A (en) | 2006-06-23 | 2006-06-23 | Cleaning liquid in use for removing photoresist on integrate circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610014415 CN101093363A (en) | 2006-06-23 | 2006-06-23 | Cleaning liquid in use for removing photoresist on integrate circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101093363A true CN101093363A (en) | 2007-12-26 |
Family
ID=38991669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610014415 Pending CN101093363A (en) | 2006-06-23 | 2006-06-23 | Cleaning liquid in use for removing photoresist on integrate circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101093363A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101962775A (en) * | 2010-09-29 | 2011-02-02 | 深圳市洁驰科技有限公司 | Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof |
| CN101968610A (en) * | 2010-08-12 | 2011-02-09 | 武汉华灿光电有限公司 | Method for removing optical resist after all-wet etching process |
| CN101373342B (en) * | 2008-10-23 | 2011-03-02 | 江阴江化微电子材料股份有限公司 | Acidic stripping liquid and preparing method thereof |
| CN106935685A (en) * | 2015-12-31 | 2017-07-07 | 无锡华润华晶微电子有限公司 | A kind of LED chip removes gluing method |
| CN115236953A (en) * | 2021-04-22 | 2022-10-25 | 金�雄 | Stripper composition for removing photoresist and method for stripping photoresist using the same |
-
2006
- 2006-06-23 CN CN 200610014415 patent/CN101093363A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373342B (en) * | 2008-10-23 | 2011-03-02 | 江阴江化微电子材料股份有限公司 | Acidic stripping liquid and preparing method thereof |
| CN101968610A (en) * | 2010-08-12 | 2011-02-09 | 武汉华灿光电有限公司 | Method for removing optical resist after all-wet etching process |
| CN101962775A (en) * | 2010-09-29 | 2011-02-02 | 深圳市洁驰科技有限公司 | Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof |
| CN106935685A (en) * | 2015-12-31 | 2017-07-07 | 无锡华润华晶微电子有限公司 | A kind of LED chip removes gluing method |
| CN115236953A (en) * | 2021-04-22 | 2022-10-25 | 金�雄 | Stripper composition for removing photoresist and method for stripping photoresist using the same |
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| C06 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |