CN101661960B - 形成设在p型衬底上的肖特基二极管或底部阳极肖特基二极管的结构与方法 - Google Patents
形成设在p型衬底上的肖特基二极管或底部阳极肖特基二极管的结构与方法 Download PDFInfo
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- CN101661960B CN101661960B CN 200810214822 CN200810214822A CN101661960B CN 101661960 B CN101661960 B CN 101661960B CN 200810214822 CN200810214822 CN 200810214822 CN 200810214822 A CN200810214822 A CN 200810214822A CN 101661960 B CN101661960 B CN 101661960B
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- schottky
- anode
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- junction barrier
- barrier
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- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
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- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims description 106
- 238000000034 method Methods 0.000 claims description 26
- 239000007943 implant Substances 0.000 claims description 23
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 15
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- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims description 7
- -1 phosphonium ion Chemical class 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 1
- 150000002739 metals Chemical class 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
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- 230000005524 hole trap Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (31)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810214822 CN101661960B (zh) | 2008-08-26 | 2008-08-26 | 形成设在p型衬底上的肖特基二极管或底部阳极肖特基二极管的结构与方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810214822 CN101661960B (zh) | 2008-08-26 | 2008-08-26 | 形成设在p型衬底上的肖特基二极管或底部阳极肖特基二极管的结构与方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101661960A CN101661960A (zh) | 2010-03-03 |
CN101661960B true CN101661960B (zh) | 2011-05-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 200810214822 Active CN101661960B (zh) | 2008-08-26 | 2008-08-26 | 形成设在p型衬底上的肖特基二极管或底部阳极肖特基二极管的结构与方法 |
Country Status (1)
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CN (1) | CN101661960B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8710585B1 (en) * | 2013-02-25 | 2014-04-29 | Alpha And Omega Semiconductor Incorporated | High voltage fast recovery trench diode |
CN104351870A (zh) * | 2014-10-29 | 2015-02-18 | 刘瑞华 | 一种黄皮果果汁加工方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1409409A (zh) * | 2001-09-25 | 2003-04-09 | 三洋电机株式会社 | 肖特基势垒二极管及其制造方法 |
CN1855551A (zh) * | 2005-04-28 | 2006-11-01 | 恩益禧电子股份有限公司 | 半导体器件及其制造方法 |
CN1855549A (zh) * | 2005-03-30 | 2006-11-01 | 三洋电机株式会社 | 半导体装置 |
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2008
- 2008-08-26 CN CN 200810214822 patent/CN101661960B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1409409A (zh) * | 2001-09-25 | 2003-04-09 | 三洋电机株式会社 | 肖特基势垒二极管及其制造方法 |
CN1855549A (zh) * | 2005-03-30 | 2006-11-01 | 三洋电机株式会社 | 半导体装置 |
CN1855551A (zh) * | 2005-04-28 | 2006-11-01 | 恩益禧电子股份有限公司 | 半导体器件及其制造方法 |
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Publication number | Publication date |
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CN101661960A (zh) | 2010-03-03 |
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Effective date of registration: 20160909 Address after: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee after: Chongqing Wanguo Semiconductor Technology Co., Ltd. Address before: Bermuda Hamilton No. 22 Vitoria street Canon hospital Patentee before: Alpha & Omega Semiconductor Inc. |
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Effective date of registration: 20180211 Address after: The British West Indies Dakaiman Cayman Island KY1-1107 No. 122 Marie street, and the wind floor 709 mailbox Patentee after: Nations Semiconductor (Cayman) Ltd. Address before: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee before: Chongqing Wanguo Semiconductor Technology Co., Ltd. |
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TR01 | Transfer of patent right |