CN101630664B - 一种银基键合丝及其制备方法 - Google Patents

一种银基键合丝及其制备方法 Download PDF

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CN101630664B
CN101630664B CN2009101086649A CN200910108664A CN101630664B CN 101630664 B CN101630664 B CN 101630664B CN 2009101086649 A CN2009101086649 A CN 2009101086649A CN 200910108664 A CN200910108664 A CN 200910108664A CN 101630664 B CN101630664 B CN 101630664B
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silver
bonding wire
based bonding
annealing
wire
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CN101630664A (zh
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曾光伟
林滔
房跃波
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Sichuan Winner Special Electronic Materials Co.,Ltd.
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SICHUAN WINNER SPECIAL ELECTRONIC MATERIALS CO Ltd
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Abstract

本发明公开了一种银基键合丝，基材为银线，其特征在于：银线的表面有金镀层，金的重量百分比含量为0.5～18.0％。本发明还公开了银基键合丝的制备方法，包括预制银线、超细拉丝和退火，其特征在于：在预制银线的表面制作金镀层，金的重量百分比含量为0.5～18.0％。本发明与现有技术相比的有益效果是：本发明的银基键合丝采用常规技术的生产设备，制备成本低廉，材料成本只有金键合丝的1/4，而且具有与金键合丝相同的焊接性能，采用本发明的银基键合丝焊接的成球特性优秀，可靠性高，其硬度与金键合丝的球基本相同。用作LED发光管封装的内引线，LED发光管亮度、衰减特性及电性能远优于现有普遍使用于LED封装的键合金丝。

Description

一种银基键合丝及其制备方法
技术领域
本发明涉及键合丝，特别是涉及一种银基键合丝及其制备方法。
背景技术
键合丝(Bonding Wires)是一种直径精细的高拉伸强度金属丝，是集成电路、半导体分立器件和LED发光管制造过程中必不可少的封装用内引线。常用的是合金键合丝、铜键合丝、铝键合丝、金键合丝。LED发光管封装的内引线大多采用直径为Φ15～50μm的高纯黄金制成的金键合丝，是用纯度大于99.999％的高纯黄金为基材添加10ppm左右的微量元素，经熔炼、拉丝、退火制成，成本甚高。
发明内容：
本发明所要解决的一个技术问题是弥补以上现有技术的缺陷，提供一种以银为基材且具备金键合丝性能的银基键合丝，以降低LED封装的成本。
本发明所要解决的另一个技术问题是弥补以上现有技术的缺陷，提供一种以银为基材且具备金键合丝性能的银基键合丝的制备方法，以降低LED封装的成本。
本发明的银基键合丝的技术问题通过以下技术方案予以解决：
这种银基键合丝，基材为银线。
这种银基键合丝的特点是：
在所述银线的表面有金镀层，金的重量百分比含量为0.5～18.0％。
本发明的银基键合丝的技术问题通过以下进一步的技术方案予以解决：
所述银线的纯度至少为99.9990％。
本发明的银基键合丝的制备方法的技术问题通过以下技术方案予以解决：
这种银基复合键合丝的制备方法，包括预制银线、超细拉丝和退火。
这种银基复合键合丝的制备方法的特点是：
在所述预制银线的表面制作金镀层，金的重量百分比含量为0.5～18.0％。
本发明的银基键合丝的制备方法的技术问题通过以下进一步的技术方案予以解决：
所述金镀层厚度为0.2～5μm，电镀液为软金电镀液，电流的密度为0.25～5.5A/dm2，银线的移动速度为2.5～15.0m/min。
所述银线的纯度是将纯度为99.0000～99.9900％的银块通过电解提纯。
所述电解提纯的电解液为高纯水稀释的硝酸银溶液，电流为1.8～4.2A，电压为5～12V，温度至高为65℃
所述预制银线，包括以下子步骤：
1)预制银棒胚料，所述预制银棒胚料是将纯度至少为99.9990％的银块以连续铸造方式预制成Φ8mm～Φ10mm的圆银棒胚料；
2)熔炼，所述熔炼是将圆银棒胚料熔炼成单晶银棒，熔炼温度为930～990℃，拉伸速度为4.5～11mm/min，单晶拉伸后银棒直径为Φ3～5mm，纵横向的晶粒数分别至多为5个；
3)预拉伸，所述预拉伸是将单晶银棒预拉伸至直径为Φ100～300μm的银线；
4)固定退火处理，所述固定退火处理是在氮气保护气氛中将预拉伸后的银线进行固定退火处理成预制银线备用，退火温度为450～500℃，退火时间为20～30min。
所述超细拉丝是将表面有金镀层的银线超细拉伸至直径为Φ15～50μm的银基键合丝。
所述退火是将拉丝后的银基键合丝进行移动连续退火处理，退火温度为350～500℃，银基键合丝的移动速度为35～65米/分钟。
本发明的银基键合丝的制备方法的技术问题通过以下再进一步的技术方案予以解决：
还包括表面清洁处理，将连续退火处理后的银基键合丝进行表面杂质清除处理，包括以下子步骤；
1)采用浓度为1～2％的酸液进行酸洗，并烘干；
2)进行两次高纯水洗；
3)进行一次高压射流洗；
4)烘干。
还包括绕线，所述绕线是将表面清洁处理后的银基键合丝绕制在卷轴上，绕线张力为2～15g，绕线速度为50～80m/min，线间距为4.5～5.5mm，分卷长度为300～1000m/轴。
本发明与现有技术相比的有益效果是：
本发明的银基键合丝采用常规技术的生产设备，制备成本低廉，材料成本只有金键合丝的1/4，而且具有与金键合丝相同的焊接性能，采用本发明的银基键合丝焊接的成球特性优秀，可靠性高，其硬度与金键合丝的球基本相同。用作LED发光管封装的内引线，LED发光管亮度、衰减特性及电性能远优于现有普遍使用于LED封装的键合金丝。
具体实施方式
下面结合实施例对本发明作进一步的说明。
实施例1
一种直径为Φ20μm银基键合丝，基材为纯度为99.9995％的银，在银的表面有金镀层，金的重量百分比含量为1.2～1.6％。
其制备方法包括以下步骤：
(1)提纯，所述提纯是将纯度为99.9000％的银块电解提纯至纯度为99.9995％，电解提纯用电流为2.5～3.5A，电压为6～9V，温度至高为65℃；电解液为按1∶4.5比例的高纯水稀释的硝酸银溶液，纯度为99.9000％的银块作为阳极，尺寸约为150mm×50mm×10mm，至少95％体积浸入电解液中，高纯银箔或不锈钢薄板作为阴极，尺寸为150mm×50mm×1mm，至少95％体积浸入电解液中，待阴极淀积的纯度为99.9995％的高纯银约为1.5kg时，更换阴极，将淀积的高纯银用高纯水清洗后真空烘干，烘干温度为260～300℃，烘干时间为2～3小时；
(2)预制银棒胚料，所述预制银棒胚料是将纯度至少为99.999％的银块以连续铸造方式预制成Φ6～8mm的圆银棒胚料；
(3)熔炼，在有氮气气氛的定向凝固水平连铸金属单晶的连铸室，将99.9995％的高纯圆银棒胚料连续加入，熔炼成单晶银棒，高频感应加热熔炼温度为930～990℃，在完成溶化后进行区域熔炼并保温，在维持2～4L/min净化氮气流量的连铸室中进行定向凝固水平单晶连铸，拉伸速度为4.5～11mm/min，单晶拉伸后银棒直径为Φ5mm，纵横向的晶粒数为1个；
(4)预拉伸，在粗拉伸机上将Φ5mm的单晶银棒预拉伸成直径为Φ300μm的银线；
(5)固定退火处理，在氮气保护气氛中将预拉伸后的Φ300μm的银线进行固定退火处理，退火温度为480℃，退火时间为25min，自然冷却至室温；
(6)表面镀金，在固定退火处理后的Φ300μm的银线的表面制作金镀层，金镀层厚度为0.5μm，金的重量百分比含量为1.2～1.6％，表面镀金用电镀液为软金电镀液，电流的密度为1.0～1.25A/dm2，银线的移动速度为4.2～5.3m/min；
(7)拉丝，采用精密拉伸机将表面镀金的银线超细拉伸至直径为Φ20μm的银基键合丝；
(8)连续退火处理，将拉丝后的银基键合丝通过连续退火炉进行移动连续退火处理，退火温度为380℃，银基键合丝的移动速度为65米/分钟，控制退火后的丝材拉断力为5～9克，延展率为10～15％；
(9)表面清洁处理，将连续退火处理后的银基键合丝进行清除银基键合丝表面杂质处理，包括以下子步骤；
1)采用浓度为1～2％的酸液进行酸洗，并烘干，连续酸洗烘干速度为65m/min；
2)进行两次高纯水洗；
3)进行一次高压射流洗；
4)烘干；烘干温度为150℃±10℃；
(10)绕线，将表面清洁处理后的银基键合丝绕制在卷轴上，绕线张力为4g，绕线速度为60～650m/min，线间距为4.58～5.22mm，分卷长度为500m/轴。
上述成品键合丝用作LED发光管封装的内引线后，拉断力及推球剪切力与同直径的现有普遍使用于LED封装的键合金丝测试结果对比表如下：
Figure G2009101086649D00061
表中CPK是工序制程能力系数。其值越高，表明焊线稳定性越好。标准值为1.67。
实施例1的焊接性能，包括拉断力、推球剪切力远优于现有普遍使用于LED封装的键合金丝。
实施例2
一种直径为Φ25μm的银基键合丝，基材为纯度为99.9995％的银，在银的表面有金镀层，金的重量百分比含量为8～10％。
其制备方法包括以下步骤：
(1)提纯，基本同实施例1，区别是提纯的银块纯度为99.9600％；
(2)预制银棒胚料，同实施例1；
(3)熔炼，同实施例1；
(4)预拉伸，同实施例1；
(5)固定退火处理，同实施例1；
(6)表面镀金，基本同实施例1，区别是：金镀层厚度为3.5～4.0，金的重量百分比含量为8～10％，表面镀金用电流的密度为3.0～4.15A/dm2，银线的移动速度为4.0～5.0m/min；
(7)拉丝，基本同实施例1，区别是超细拉伸至直径为Φ25μm的银基键合丝；
(8)连续退火处理，基本同实施例1，区别是退火温度为365℃，银基键合丝的移动速度为60米/分钟；
(9)表面清洁处理，同实施例1；
(10)绕线，基本同实施例1，区别是绕线张力为6g，线间距为4.86～5.28m。
上述成品键合丝用作LED发光管封装的内引线后，拉断力及推球剪切力与同直径的现有普遍使用于LED封装的键合金丝测试结果对比表如下：
Figure G2009101086649D00081
表中CPK是工序制程能力系数。其值越高，表明焊线稳定性越好。标准值为1.67。
实施例2的焊接性能，包括拉断力、推球剪切力远优于现有普遍使用于LED封装的键合金丝
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下做出若干等同替代或明显变型，而且性能或用途相同，则应当视为属于本发明由所提交的权利要求书确定的保护范围。

Claims (3)

1.一种银基键合丝的制备方法，包括预制银线、银线表面镀金、超细拉丝和退火，其特征在于：
a、所述预制银线包括以下子步骤：
1)预制银棒胚料，所述预制银棒胚料是将纯度至少为99.9990％的银块以连续铸造方式预制成直径为8～10mm的圆银棒胚料；
所述银块的纯度是将纯度为99.0000～99.9900％的银块通过电解提纯而获得的，所述电解提纯的电解液为高纯水稀释的硝酸银溶液，电流为1.8～4.2A，电压为5～12V，温度至高为65℃；
2)熔炼，所述熔炼是将圆银棒胚料熔炼成单晶银棒，熔炼温度为930～990℃，拉伸速度为4.5～11mm/min，单晶拉伸后银棒直径为3～5mm，纵横向的晶粒数分别至多为5个；
3)预拉伸，所述预拉伸是将单晶银棒预拉伸至直径为100～300μm的银线；
4)固定退火处理，所述固定退火处理是在氮气保护气氛中将预拉伸后的银线进行固定退火处理，退火温度为450～500℃，退火时间为20～30min；
b、所述银线表面镀金是在纯度至少为99.9990％的银线表面镀制重量百分比含量为0.5～18.0％的金镀层；
所述金镀层厚度为0.2～5μm，电镀液为软金电镀液，电流的密度为0.25～5.5A/dm2，银线的移动速度为2.5～15.0m/min；
c、所述超细拉丝是将表面有金镀层的银线超细拉伸至直径为15～50μm的银基键合丝；
d、所述退火是将拉丝后的银基键合丝进行移动连续退火处理，退火温度为350～500℃，银基键合丝的移动速度为35～65m/min。
2.根据权利要求1所述的银基键合丝的制备方法，其特征在于：
还包括表面清洁处理，将连续退火处理后的银基键合丝进行表面杂质清除处理，包括以下子步骤；
1)采用浓度为1～2％的酸液进行酸洗，并烘干；
2)进行两次高纯水洗；
3)进行一次高压射流洗；
4)烘干。
3.根据权利要求2所述的银基键合丝的制备方法，其特征在于：
还包括绕线，所述绕线是将表面清洁处理后的银基键合丝绕制在卷轴上，绕线张力为2～15g，绕线速度为50～80m/min，线间距为4.5～5.5mm，分卷长度为3001000m/轴。
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