CN101535431B - 一种用于抛光多晶硅的化学机械抛光液 - Google Patents
一种用于抛光多晶硅的化学机械抛光液 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 59
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 239000007788 liquid Substances 0.000 title claims abstract description 10
- 229920005591 polysilicon Polymers 0.000 title abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 239000003093 cationic surfactant Substances 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000012530 fluid Substances 0.000 claims description 19
- 229960001866 silicon dioxide Drugs 0.000 claims description 12
- 239000006061 abrasive grain Substances 0.000 claims description 11
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 125000002091 cationic group Chemical group 0.000 claims description 4
- -1 phenylenedimethylidyne Chemical group 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229920005682 EO-PO block copolymer Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- CASPZMCSNJZQMV-UHFFFAOYSA-N ethane;2-methyloxirane Chemical compound CC.CC1CO1 CASPZMCSNJZQMV-UHFFFAOYSA-N 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明公开了一种用于抛光多晶硅的化学机械抛光液，该抛光液包含研磨颗粒和水，其特征为还包含一种或多种季铵盐型阳离子表面活性剂。本发明的抛光液可以在碱性条件下较好地抛光多晶硅，并且还可以显著降低多晶硅的去除速率及多晶硅与二氧化硅的选择比，显著提高多晶硅的平坦化效率。
Description
技术领域
本发明涉及一种化学机械抛光液，尤其涉及一种用于抛光多晶硅的化学机械抛光液。
背景技术
在集成电路制造中，互连技术的标准在提高，一层上面又沉积一层，使得在衬底表面形成了不规则的形貌。现有技术中使用的一种平坦化方法就是化学机械抛光(CMP)，CMP工艺就是使用一种含磨料的混合物和抛光垫去抛光一硅片表面。在典型的化学机械抛光方法中，将衬底直接与旋转抛光垫接触，用一载重物在衬底背面施加压力。在抛光期间，垫片和操作台旋转，同时在衬底背面保持向下的力，将磨料和化学活性溶液(通常称为抛光液或抛光浆料)涂于垫片上，该抛光液与正在抛光的薄膜发生化学反应开始进行抛光过程。
对于多晶硅的抛光，目前主要应用于两种芯片，一种是DRAM，一种是Flash.后者应用中往往在对多晶硅的抛光中会涉及到对二氧化硅的抛光。
在以往的主要利用以二氧化硅为研磨颗粒的碱性浆料来抛光多晶硅层和二氧化硅层的情况下，多晶硅的去除速率往往比二氧化硅的除去速率高得多，易导致多晶硅的过量去除而产生凹陷，影响随后的工艺。
因此，抛光工艺中因多晶硅去除速率过高而产生表面凹陷的问题亟待解决。专利文献US2003/0153189A1公开了一种用于多晶硅抛光的化学机械抛光液及方法，该抛光液包括一种聚合物表面活性剂和一种选自氧化铝和氧化铈的研磨颗粒，该聚合物表面活性剂为聚羧酸酯表面活性剂，用该浆料可以使多晶硅表面大块区域的抛光速率大大高于沟槽内的抛光速率，从而减少凹陷。专利文献US2005/0130428A1和CN 1637102A公开了一种用于多晶硅化学机械抛光的浆料，该浆料成分包括一种或多种在多晶硅层上形成钝化层的非离子表面活性剂及一种能形成第二钝化层来能减小氮化硅或氧化硅除去速率的第二表面活性剂。这种非离子表面活性剂至少包括一种选自环氧乙烷-环氧丙烷嵌段共聚物醇和环氧乙烷-环氧丙烷三嵌段聚合物组成的组中的化合物，该浆料可以将多晶硅除去速率与绝缘体除去速率之间的选择比至少减小大约50％。
发明内容
本发明的目的是为了在碱性条件下较好地抛光多晶硅，降低多晶硅的抛光速率及多晶硅比二氧化硅的抛光速率比，显著提高多晶硅的平坦化效率，从而提供-种用于抛光多晶硅的化学机械抛光液。
本发明的抛光液包含研磨颗粒和水，其特征在于还包含一种或多种季铵盐型阳离子表面活性剂。所述的季铵盐型阳离子表面活性剂为单季铵盐型和/或双子型(Gemini)季铵盐阳离子表面活性剂。
本发明中，所述的单季铵盐型阳离子表面活性剂为R1R2N+R3R4X-，其中：R1为-CmH2m+1，8≤m≤22；R2和R3相同，为-CH3或-C2H5；R4和R1相同，或R4为-CH3、-C2H5、-CH2-C6H5或-CH2CH2OH；X-为Cl-、Br-、CH3SO4 -、NO3 -或C6H5 -SO4 -。
本发明中，所述的双子型(Gemini)季铵盐阳离子表面活性剂为(R1R2N+R3X-)2R5，其中：R1为-CmH2m+1，8≤m≤18；R2和R3相同，为-CH3或-C2H5；R5为苯二亚甲基，聚亚甲基-(CH2)n-，2≤n≤30，或聚氧乙烯基-CH2CH2(OCH2CH2)n-，1≤n≤30；X为Cl-或Br-。
本发明中，所述的季铵盐型阳离子表面活性剂的重量百分比浓度较佳地为0.0001～5％，更佳地为0.001～1％。
本发明中，所述的抛光液的pH值较佳地为7～12。
发明中所述的研磨颗粒可为二氧化硅、氧化铝、掺杂铝或覆盖铝的二氧化硅、二氧化铈、二氧化钛和/或高分子聚合物研磨颗粒。所述的研磨颗粒的重量百分比浓度较佳为0.5～30％，更佳地为2～30％。
本发明的抛光液还可以包括pH调节剂，粘度调节剂和/或消泡剂来达到本发明的发明目的。
本发明的抛光液由上面所述组分简单混合即可制得。
本发明的积极进步效果在于：本发明的抛光液可以在碱性条件下较好地抛光多晶硅，并且还可以显著降低多晶硅的去除速率及多晶硅与二氧化硅的选择比，显著提高多晶硅的平坦化效率。
具体实施方式
下面通过实施例的方式进一步说明本发明，并不因此将本发明限制在所述的实施例范围之中。
实施例1～6
表1中给出了抛光多晶硅的化学机械抛光液的实施例1～6，下列抛光液按表中所给组分简单混合，用本领域公知的pH调节剂调节至所需pH值即可，水为余量。
表1 多晶硅化学机械抛光液实施例1～6
效果实施例1
表2 抛光液1～20和对比抛光液1的组成、pH值、多晶硅和二氧化硅的去除速率及选择比
由表2数据显示，与未添加季铵盐型阳离子表面活性剂的抛光液相比，抛光液1～20均不同程度的降低了多晶硅的去除速率及多晶硅与二氧化硅的选择比。
抛光时的工艺参数为：下压力3psi、抛光盘(直径14英寸)的转速70rpm、抛光头转速80rpm、抛光浆料流速200ml/min、抛光垫为PPG fast pad CS7、抛光机为LogitechLP50。
本发明所使用的原料和试剂均为市售产品。
Claims (6)
1.一种用于抛光多晶硅的化学机械抛光液，包含研磨颗粒和水，其特征在于：还包含一种或多种季铵盐型阳离子表面活性剂，其中所述的季铵盐型阳离子表面活性剂为双子型季铵盐阳离子表面活性剂，其中，所述的双子型季铵盐阳离子表面活性剂为(R1R2N+R3X-)2R5，其中：R1为-CmH2m+1，8≤m≤18；R2和R3相同，为-CH3或-C2H5；R5为苯二亚甲基，聚亚甲基-(CH2)n-，2≤n≤30，或聚氧乙烯基-CH2CH2-(OCH2CH2)n-，1≤n≤30；X-为Cl-或Br-，其中，所述的季铵盐型阳离子表面活性剂的重量百分比浓度为0.0001～5％。
2.根据权利要求1所述的抛光液，其特征在于：所述的季铵盐型阳离子表面活性剂的重量百分比浓度为0.001～1％。
3.根据权利要求1所述的抛光液，其特征在于：抛光液的pH值为7～12。
4.根据权利要求1所述的抛光液，其特征在于：所述的研磨颗粒为二氧化硅、三氧化二铝、掺杂铝或覆盖铝的二氧化硅、二氧化铈、二氧化钛和/或高分子聚合物研磨颗粒。
5.根据权利要求1所述的抛光液，其特征在于：所述的研磨颗粒的重量百分比为0.5～30％。
6.根据权利要求5所述的抛光液，其特征在于：所述的研磨颗粒的重量百分比为2～30％。
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| CN200780037469.0A CN101535431B (zh) | 2006-10-27 | 2007-10-22 | 一种用于抛光多晶硅的化学机械抛光液 |
| PCT/CN2007/003018 WO2008052423A1 (fr) | 2006-10-27 | 2007-10-22 | Liquide de polissage chimico-mécanique pour le polissage du polysilicium |
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| CN101451049A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101665664B (zh) * | 2008-09-05 | 2013-08-28 | 安集微电子（上海）有限公司 | 季铵盐型阳离子表面活性剂和一种化学机械抛光液的应用 |
| US8071479B2 (en) * | 2008-12-11 | 2011-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| CN101747842B (zh) * | 2008-12-19 | 2014-12-31 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101928519A (zh) * | 2009-06-23 | 2010-12-29 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其制备方法 |
| CN102108261A (zh) * | 2009-12-25 | 2011-06-29 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| US8232208B2 (en) * | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
| US8568610B2 (en) * | 2010-09-20 | 2013-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate |
| CN103205205B (zh) * | 2012-01-16 | 2016-06-22 | 安集微电子（上海）有限公司 | 一种碱性化学机械抛光液 |
| CN104745091A (zh) * | 2013-12-26 | 2015-07-01 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及使用方法 |
| CN110122488A (zh) * | 2019-06-03 | 2019-08-16 | 临沂康爱特化工科技有限公司 | 一种油田返注水复合杀菌剂及其制备方法 |
| US20220348788A1 (en) * | 2021-04-27 | 2022-11-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
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| US20020064955A1 (en) * | 2000-10-16 | 2002-05-30 | Lee Jae-Dong | Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same |
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| US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| JP4430331B2 (ja) * | 2003-05-07 | 2010-03-10 | ニッタ・ハース株式会社 | 半導体ウェハ研磨用組成物 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
| US20020064955A1 (en) * | 2000-10-16 | 2002-05-30 | Lee Jae-Dong | Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same |
| US20020177318A1 (en) * | 2000-11-16 | 2002-11-28 | Miller Anne E. | Copper polish slurry for reduced interlayer dielectric erosion and method of using same |
| CN1359997A (zh) * | 2000-12-20 | 2002-07-24 | 拜尔公司 | 化学机械法抛光二氧化硅薄膜用抛光膏 |
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| JP特开2004-335722A 2004.11.25 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101535431A (zh) | 2009-09-16 |
| WO2008052423A8 (fr) | 2009-06-04 |
| WO2008052423A1 (fr) | 2008-05-08 |
| CN101168647A (zh) | 2008-04-30 |
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