WO2008052423A8 - Liquide de polissage chimico-mécanique pour le polissage du polysilicium - Google Patents

Liquide de polissage chimico-mécanique pour le polissage du polysilicium Download PDF

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Publication number
WO2008052423A8
WO2008052423A8 PCT/CN2007/003018 CN2007003018W WO2008052423A8 WO 2008052423 A8 WO2008052423 A8 WO 2008052423A8 CN 2007003018 W CN2007003018 W CN 2007003018W WO 2008052423 A8 WO2008052423 A8 WO 2008052423A8
Authority
WO
WIPO (PCT)
Prior art keywords
polysilicon
polishing
chemical
polishing liquid
mechanical polishing
Prior art date
Application number
PCT/CN2007/003018
Other languages
English (en)
Chinese (zh)
Other versions
WO2008052423A1 (fr
Inventor
Judy Jianfen Jing
Andy Chunxiao Yang
Original Assignee
Anji Microelectronics Shanghai
Judy Jianfen Jing
Andy Chunxiao Yang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai, Judy Jianfen Jing, Andy Chunxiao Yang filed Critical Anji Microelectronics Shanghai
Priority to CN200780037469.0A priority Critical patent/CN101535431B/zh
Publication of WO2008052423A1 publication Critical patent/WO2008052423A1/fr
Publication of WO2008052423A8 publication Critical patent/WO2008052423A8/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un liquide de polissage chimico-mécanique pour le polissage du polysilicium. Ce liquide comprend des particules abrasives et de l'eau et est caractérisé par le fait qu'il comprend en outre une ou plusieurs sortes d'agents tensio-actifs cationiques de type ammonium quaternaire. Le liquide de polissage permet de mieux polir le polysilicium dans des conditions basiques et peut de façon significative réduire la vitesse de retrait du polysilicium et le rapport de sélectivité du polysilicium et du SiO2 et peut à l'évidence améliorer le rendement de planarisation du polysilicium.
PCT/CN2007/003018 2006-10-27 2007-10-22 Liquide de polissage chimico-mécanique pour le polissage du polysilicium WO2008052423A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200780037469.0A CN101535431B (zh) 2006-10-27 2007-10-22 一种用于抛光多晶硅的化学机械抛光液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2006101176694A CN101168647A (zh) 2006-10-27 2006-10-27 一种用于抛光多晶硅的化学机械抛光液
CN200610117669.4 2006-10-27

Publications (2)

Publication Number Publication Date
WO2008052423A1 WO2008052423A1 (fr) 2008-05-08
WO2008052423A8 true WO2008052423A8 (fr) 2009-06-04

Family

ID=39343804

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2007/003018 WO2008052423A1 (fr) 2006-10-27 2007-10-22 Liquide de polissage chimico-mécanique pour le polissage du polysilicium

Country Status (2)

Country Link
CN (2) CN101168647A (fr)
WO (1) WO2008052423A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
CN101665664B (zh) * 2008-09-05 2013-08-28 安集微电子（上海）有限公司 季铵盐型阳离子表面活性剂和一种化学机械抛光液的应用
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101747842B (zh) * 2008-12-19 2014-12-31 安集微电子（上海）有限公司 一种化学机械抛光液
CN101928519A (zh) * 2009-06-23 2010-12-29 安集微电子（上海）有限公司 一种化学机械抛光液及其制备方法
CN102108261A (zh) * 2009-12-25 2011-06-29 安集微电子（上海）有限公司 一种化学机械抛光液
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
CN103205205B (zh) * 2012-01-16 2016-06-22 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN104745091A (zh) * 2013-12-26 2015-07-01 安集微电子（上海）有限公司 一种化学机械抛光液及使用方法
CN110122488A (zh) * 2019-06-03 2019-08-16 临沂康爱特化工科技有限公司 一种油田返注水复合杀菌剂及其制备方法
US20220348788A1 (en) * 2021-04-27 2022-11-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
KR100396881B1 (ko) * 2000-10-16 2003-09-02 삼성전자주식회사 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
DE10063488A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Siliciumdioxid-Filmen
JP4430331B2 (ja) * 2003-05-07 2010-03-10 ニッタ・ハース株式会社 半導体ウェハ研磨用組成物
US20060205219A1 (en) * 2005-03-08 2006-09-14 Baker Arthur R Iii Compositions and methods for chemical mechanical polishing interlevel dielectric layers

Also Published As

Publication number Publication date
CN101535431A (zh) 2009-09-16
CN101168647A (zh) 2008-04-30
CN101535431B (zh) 2012-12-19
WO2008052423A1 (fr) 2008-05-08

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