WO2008052423A8 - Liquide de polissage chimico-mécanique pour le polissage du polysilicium - Google Patents
Liquide de polissage chimico-mécanique pour le polissage du polysilicium Download PDFInfo
- Publication number
- WO2008052423A8 WO2008052423A8 PCT/CN2007/003018 CN2007003018W WO2008052423A8 WO 2008052423 A8 WO2008052423 A8 WO 2008052423A8 CN 2007003018 W CN2007003018 W CN 2007003018W WO 2008052423 A8 WO2008052423 A8 WO 2008052423A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polysilicon
- polishing
- chemical
- polishing liquid
- mechanical polishing
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 6
- 229920005591 polysilicon Polymers 0.000 title abstract 6
- 238000005498 polishing Methods 0.000 title abstract 5
- 239000007788 liquid Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003093 cationic surfactant Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
L'invention concerne un liquide de polissage chimico-mécanique pour le polissage du polysilicium. Ce liquide comprend des particules abrasives et de l'eau et est caractérisé par le fait qu'il comprend en outre une ou plusieurs sortes d'agents tensio-actifs cationiques de type ammonium quaternaire. Le liquide de polissage permet de mieux polir le polysilicium dans des conditions basiques et peut de façon significative réduire la vitesse de retrait du polysilicium et le rapport de sélectivité du polysilicium et du SiO2 et peut à l'évidence améliorer le rendement de planarisation du polysilicium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200780037469.0A CN101535431B (zh) | 2006-10-27 | 2007-10-22 | 一种用于抛光多晶硅的化学机械抛光液 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2006101176694A CN101168647A (zh) | 2006-10-27 | 2006-10-27 | 一种用于抛光多晶硅的化学机械抛光液 |
CN200610117669.4 | 2006-10-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008052423A1 WO2008052423A1 (fr) | 2008-05-08 |
WO2008052423A8 true WO2008052423A8 (fr) | 2009-06-04 |
Family
ID=39343804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2007/003018 WO2008052423A1 (fr) | 2006-10-27 | 2007-10-22 | Liquide de polissage chimico-mécanique pour le polissage du polysilicium |
Country Status (2)
Country | Link |
---|---|
CN (2) | CN101168647A (fr) |
WO (1) | WO2008052423A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101451049A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN101665664B (zh) * | 2008-09-05 | 2013-08-28 | 安集微电子(上海)有限公司 | 季铵盐型阳离子表面活性剂和一种化学机械抛光液的应用 |
US8071479B2 (en) * | 2008-12-11 | 2011-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
CN101747842B (zh) * | 2008-12-19 | 2014-12-31 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN101928519A (zh) * | 2009-06-23 | 2010-12-29 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其制备方法 |
CN102108261A (zh) * | 2009-12-25 | 2011-06-29 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
US8232208B2 (en) * | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
US8568610B2 (en) * | 2010-09-20 | 2013-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate |
CN103205205B (zh) * | 2012-01-16 | 2016-06-22 | 安集微电子(上海)有限公司 | 一种碱性化学机械抛光液 |
CN104745091A (zh) * | 2013-12-26 | 2015-07-01 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及使用方法 |
CN110122488A (zh) * | 2019-06-03 | 2019-08-16 | 临沂康爱特化工科技有限公司 | 一种油田返注水复合杀菌剂及其制备方法 |
US20220348788A1 (en) * | 2021-04-27 | 2022-11-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
KR100396881B1 (ko) * | 2000-10-16 | 2003-09-02 | 삼성전자주식회사 | 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법 |
US6787061B1 (en) * | 2000-11-16 | 2004-09-07 | Intel Corporation | Copper polish slurry for reduced interlayer dielectric erosion and method of using same |
DE10063488A1 (de) * | 2000-12-20 | 2002-06-27 | Bayer Ag | Polierslurry für das chemisch-mechanische Polieren von Siliciumdioxid-Filmen |
JP4430331B2 (ja) * | 2003-05-07 | 2010-03-10 | ニッタ・ハース株式会社 | 半導体ウェハ研磨用組成物 |
US20060205219A1 (en) * | 2005-03-08 | 2006-09-14 | Baker Arthur R Iii | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
-
2006
- 2006-10-27 CN CNA2006101176694A patent/CN101168647A/zh active Pending
-
2007
- 2007-10-22 CN CN200780037469.0A patent/CN101535431B/zh active Active
- 2007-10-22 WO PCT/CN2007/003018 patent/WO2008052423A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN101535431A (zh) | 2009-09-16 |
CN101168647A (zh) | 2008-04-30 |
CN101535431B (zh) | 2012-12-19 |
WO2008052423A1 (fr) | 2008-05-08 |
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