CN101494151B - Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency - Google Patents
Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency Download PDFInfo
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- CN101494151B CN101494151B CN2009100470383A CN200910047038A CN101494151B CN 101494151 B CN101494151 B CN 101494151B CN 2009100470383 A CN2009100470383 A CN 2009100470383A CN 200910047038 A CN200910047038 A CN 200910047038A CN 101494151 B CN101494151 B CN 101494151B
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Abstract
The invention relates to the technical field of a plasma magnetic control cathode and in particular to a one-dimensional linear plasma cleaning magnetic control cathode device with high efficiency. The device is characterized in that the top of an electrode contact of a cathode is connected with a hollow pipeline and the bottom of the electrode contact of the cathode passes through an upper wall of a vacuum cavity body and is then connected with an upper surface of a cathode of a linear metal plate in the vacuum cavity body. A shield cover is arranged between the vacuum cavity body and the cathode of the linear metal plate and the upper partof the shield cover is also connected with a gas inlet pipe of which the top is positioned outside the vacuum cavity body. The upward side outside the vacuum cavity body is provided with a magnetic coil device. Compared with the prior art, the device has convenient and simple structure and realizes surface cleaning processing with high plasma density, low power consumption and high uniformity; the adjustment of the electromagnetic field can ensure the adjustable density of the plasma generated by the cathode so as to ensure the flexible application; and due to the adoption of a one-dimensional linear structure by the cathode, the device occupies small space and has easy installation. Therefore, the whole device has low production cost and can implement a large-area continuous cleaning technique.
Description
[technical field]
The present invention relates to plasma magnetron cathode technical field, relate in particular to a kind of high efficiency magnetic control cathode assembly for cleaning one-dimensional linear plasma.
[background technology]
Along with the develop rapidly of current technology, plasma technique has been widely used in many professional domains, and it is more and more important to become.In the process that semiconductor device and function film are produced, material and device surface exist particle to stick the problems such as thing, absorption aqueous vapor, surface oxidation, contamination, can cause the consequences such as rete poor adhesion and device performance be poor., in order to overcome the above problems, need effects on surface to clean.Usually the Physical Chemical Cleaning method of extensive use roughly can be divided into wet-cleaned and dry method cleaning two classes.Wet-cleaned generally adopts acid, bases solution to carry out clean to substrate surface, and scavenging period is long, and technique easily pollutes, and the environmental protection cost is higher.And plasma clean is a kind of dry method cleaning of environmental protection, and quality and the efficiency of cleaning account for great advantage.How to produce the confined plasma of stability and high efficiency, it is extremely important that the Design and manufacture of plasma clean magnetron cathode seems.
In prior art (03819917.3,90209634.6 and 200480014058.6 etc.), designed plasma cathode is mainly the plasma magnetic control sputtering cathode.The plasma magnetic control sputtering cathode is mainly used in the sputtering sedimentation of film, also can be used for etching or the cleaning of substrate surface under lower-wattage.But what adopt due to the plasma magnetic control sputtering cathode is that the permanent magnet of internally-arranged type produces magnetic field and strengthens plasma density, its negative electrode has complex structure, cost is high, the shortcoming such as take up room large, be not suitable for application in large-area plasma clean equipment.
In the application of plasma etching negative electrode, adopt at present columns or club shaped structures more, the negative electrode shortcoming of this form is: the many Without Shielding Cover in back, during work, the equal build-up of luminance of negative electrode surrounding produces plasma, effective plasma utilance less than 50%, therefore under identical electrical power consumed, column/bar-shaped cathode plasma volume density is lower, can cause the speed of plasma etching/cleaning lower; Obtain higher plasma density, the required electrical power consumed of column/bar-shaped negative electrode is larger.In addition, under the certain condition of adding power, the density of plasma is non-adjustable, has also limited the application of this type of negative electrode.
[summary of the invention]
The purpose of patent of the present invention is to overcome above-mentioned shortcoming, the main one-dimensional linear negative electrode that adopts, and set up electromagnetic spool device, and a kind of cathode assembly with simple and direct structure and process for stabilizing of design, can carry out the surface clean of large-area substrates, and can realize the controllability of plasma density on the basis of improving the plasma utilization ratio, thereby efficiency and the stability of plasma clean have greatly been improved.
for achieving the above object, the present invention proposes a kind of high efficiency magnetic control cathode assembly for cleaning one-dimensional linear plasma, comprise linear metal plate negative electrode, hollow pipeline, the cathode electrode joint, air inlet pipe, insulating sealer, electromagnetic spool device, it is characterized in that: the cathode electrode joint top of hollow connects hollow pipeline, the bottom of cathode electrode joint connects the upper surface that is placed in the linear metal plate negative electrode in vacuum cavity after passing the upper wall of vacuum cavity, cover above linear metal plate negative electrode being provided with one between vacuum cavity and linear metal plate negative electrode, the radome of surrounding and bottom margin, radome top also connects an air inlet pipe, the top of air inlet pipe is placed in outside vacuum cavity, the outer top of vacuum cavity is provided with an electromagnetic spool device, described linear metal plate negative electrode inside is provided with the multi-pore channel hollow structure that the circulation cooling fluid is used.Described cooling fluid adopts stationary temperature,, to keep the temperature constant of negative electrode, thereby can produce stable plasma, cleans, and makes the process stabilizing of cleaning, good reproducibility.
Be arranged with insulating sealer outside the cathode electrode joint, guarantee the electric insulation between cathode electrode joint and radome, vacuum cavity.
The width of described linear metal plate negative electrode is limited in 10-100mm, and its length can extend as required in the 100-3000mm scope.
Described hollow pipeline can make cooling fluid flow to and flow out negative electrode.
Described radome is provided with back hole structure, connects air inlet pipe, and the gas that the generation plasma is used can directly enter vacuum cavity inside by this hole, and the gas flow distribution uniformity is high, makes plasma density even.
Described electromagnetic spool device can produce evenly adjustable magnetic field, regulate magnetic field by changing electric current, and then adjustment plasma density, the adjustable range of magnetic field intensity is 0-500 Gauss, the plasma that produces because of negative electrode is subject to the constraint in magnetic field that solenoid produces, the density of by adjusting magnetic field intensity, regulating plasma, adjustable extent is 10
14-10
18m
-3, because it is external, make one-dimensional linear plasma clean when magnetron cathode is installed and can save the equipment inner space again.
Spacing≤the 2mm of described radome and linear metal plate negative electrode, can limit the scope of plasma generation, confines a plasma in the front of linear metal plate negative electrode, thereby improved the utilization ratio of carrying plasma, and can improve plasma density.
Compared with the existing technology, structure is simple and direct in the present invention, can carry out continuous wash under 0.1 to 1 atmospheric pressure, and uniformity reaches more than 95%, realizes the function of the surface cleaning processing of higher ion density, low-power consumption, high uniformity; Adjusting by electromagnetic field can make the density of the plasma that negative electrode produces adjustable, thereby, keeping can making the speed of plasma clean adjustable under the constant condition of cathode power, makes its applying flexible; , because negative electrode has adopted the one-dimensional linear structure, take up room little again, be easy to install, whole device has low cost of manufacture, and can carry out large-area continuous wash technique.
[description of drawings]
Fig. 1 generalized section of the present invention.
Fig. 2 is vertical view shown in Figure 1.
Referring to accompanying drawing 1-Fig. 2,1 is vacuum cavity; 2 for processing object; 3 is linear metal plate negative electrode; 4 is hollow pipeline; 5 is radome; 6 is the cathode electrode joint; 7 is air inlet pipe; 8 is insulating sealer; 9 is electromagnetic spool device.
[specific embodiment]
Embodiment 1:
adopt cathode assembly of the present invention, can be under atmospheric pressure to processing object 2, carry out continuous wash as large-area glass, the glass width is 1.5m, the length of linear metal plate negative electrode 3 is 1.8m, width is 50mm, in vacuum cavity 1, the distance that large-area glass and linear metal plate negative electrode are 3 is 5mm, by transmitting device, glass is put under linear metal minus plate 3, and do at the uniform velocity straight reciprocating motion, cavity keeps 1 atmospheric air atmosphere, power supply produces plasma by cathode electrode joint 6 on linear metallic plate negative electrode 3 surfaces, adjust plasma intensity by adjusting cathode power power.
The uniformity that the method is cleaned large-area glass is about 85%, on above-mentioned technique basis, add electric current on electromagnetic spool device 9 of the present invention, generate an electromagnetic field plasma uniformity is improved, magnetic field intensity is 400 Gausses, under identical cathode power, air pressure and time conditions, the uniformity that large-area glass is cleaned can bring up to 96%.
Embodiment 2:
adopt magnetic field cathode of the present invention can be under atmospheric pressure to processing object 2: the large tracts of land thin polymer film, clean as the plastic film surface, the glass continuous wash, large tracts of land thin polymer film width is 1m, the length of linear metal plate negative electrode 3 is 1.2m, width is 80mm, the distance that large-area glass and linear metal plate negative electrode are 3 is 8mm, by transmitting device, glass is put under linear metal plate negative electrode 3, make unidirectional uniform motion, pass into argon gas by air inlet pipe 7 in vacuum cavity, make the cavity internal gas pressure remain on 0.8Pa, linear metal plate negative electrode outside exposing radome 53 surfaces produce plasma to power supply by cathode electrode joint 6, adjust plasma intensity by adjusting cathode power power, the uniformity that the method is cleaned large-area glass is about 88%.
On above-mentioned technique basis, owing to adding electric current on the electromagnetic spool device 9 external, generating an electromagnetic field, plasma uniformity is improved, magnetic field intensity is 300 Gausses, under identical cathode power, air pressure and time conditions, the uniformity that large-area glass is cleaned can bring up to 98%.
Claims (5)
1. high efficiency magnetic control cathode assembly for cleaning one-dimensional linear plasma, comprise negative electrode, hollow pipeline (4), cathode electrode joint (6), air inlet pipe (7), insulating sealer (8), electromagnetic spool device (9), it is characterized in that: cathode electrode joint (6) top of hollow connects hollow pipeline (4), the bottom of cathode electrode joint (6) connects the upper surface that is placed in the linear metal plate negative electrode (3) in vacuum cavity (1) after passing the upper wall of vacuum cavity (1), be provided with one and cover linear metal plate negative electrode (3) top between vacuum cavity (1) and linear metal plate negative electrode (3), the radome of surrounding and bottom margin (5), radome (5) top also connects an air inlet pipe (7), the top of air inlet pipe (7) is placed in outside vacuum cavity (1), the outer top of vacuum cavity (1) is provided with an electromagnetic spool device (9), described linear metal plate negative electrode (3) inside is provided with the multi-pore channel hollow structure of circulation cooling fluid.
2. a kind of high efficiency magnetic control cathode assembly for cleaning one-dimensional linear plasma according to claim 1, is characterized in that: be arranged with insulating sealer (8) outside cathode electrode joint (6).
3. a kind of high efficiency magnetic control cathode assembly for cleaning one-dimensional linear plasma according to claim 1, it is characterized in that: the width of described linear metal plate negative electrode (3) is 10-100mm, length is 100-3000mm.
4. a kind of high efficiency magnetic control cathode assembly for cleaning one-dimensional linear plasma according to claim 1, it is characterized in that: the adjustable range of the magnetic field intensity of described electromagnetic spool device (9) is 0-500 Gauss, and the scope of regulating plasma density by the adjusting of magnetic field intensity is 10
14-10
18m
-3
5. a kind of high efficiency magnetic control cathode assembly for cleaning one-dimensional linear plasma according to claim 1, is characterized in that: the spacing≤2mm of described radome (5) and linear metal plate negative electrode (3).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100470383A CN101494151B (en) | 2009-03-05 | 2009-03-05 | Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency |
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| CN2009100470383A CN101494151B (en) | 2009-03-05 | 2009-03-05 | Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency |
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| CN101494151A CN101494151A (en) | 2009-07-29 |
| CN101494151B true CN101494151B (en) | 2013-11-13 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103702504B (en) * | 2014-01-15 | 2016-08-24 | 北京吉兆源科技有限公司 | A kind of planar plasma generator |
| JP6836976B2 (en) * | 2017-09-26 | 2021-03-03 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN108726895A (en) * | 2018-09-05 | 2018-11-02 | 深圳市兴泰科技有限公司 | A kind of linear plasma pipette tips |
| CN111341700A (en) * | 2020-03-10 | 2020-06-26 | 北京烁科精微电子装备有限公司 | Shared cleaning module, polishing equipment and integrated circuit manufacturing system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1069977A (en) * | 1963-12-23 | 1967-05-24 | Ibm | Sputtering method |
| CN1235695A (en) * | 1996-07-24 | 1999-11-17 | 菲尔帕斯真空技术私人有限公司 | Cathode arc source and graphite target |
| CN101128911A (en) * | 2005-02-28 | 2008-02-20 | 爱普斯碧德股份有限公司 | System and process for high-density, low-energy plasma enhanced vapor phase epitaxy |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10326135B4 (en) * | 2002-06-12 | 2014-12-24 | Ulvac, Inc. | A discharge plasma processing system |
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2009
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1069977A (en) * | 1963-12-23 | 1967-05-24 | Ibm | Sputtering method |
| CN1235695A (en) * | 1996-07-24 | 1999-11-17 | 菲尔帕斯真空技术私人有限公司 | Cathode arc source and graphite target |
| CN101128911A (en) * | 2005-02-28 | 2008-02-20 | 爱普斯碧德股份有限公司 | System and process for high-density, low-energy plasma enhanced vapor phase epitaxy |
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Application publication date: 20090729 Assignee: JIANGSU HAOYANG ELECTRIC LIGHT SOURCE TECHNOLOGY CO., LTD. Assignor: Suzhou Jingneng Technology Co., Ltd. Contract record no.: 2014320000492 Denomination of invention: Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency Granted publication date: 20131113 License type: Exclusive License Record date: 20140617 |
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