GB1069977A - Sputtering method - Google Patents

Sputtering method

Info

Publication number
GB1069977A
GB1069977A GB5175264A GB5175264A GB1069977A GB 1069977 A GB1069977 A GB 1069977A GB 5175264 A GB5175264 A GB 5175264A GB 5175264 A GB5175264 A GB 5175264A GB 1069977 A GB1069977 A GB 1069977A
Authority
GB
United Kingdom
Prior art keywords
grid
anode
sputtering
coils
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5175264A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1069977A publication Critical patent/GB1069977A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An anode, a cathode and a grid are used in a method of sputter deposition by glow discharge. Sputtering apparatus comprises a cathode 16 coated with a magnetic material 18 to be deposited and surrounded by an earthed shield 22, a wire grid 28 coated with SiO or SiO2, an earthed glass or metal substrate 24 provided with a heater 27 <PICT:1069977/C6-C7/1> and movable shutters 29, 31 all enclosed within a bell jar 10 located between coils 12, 14 which maintain a uniform magnetic field between the anode and cathode. The grid wires are fastened under tension by springs to pins (38) Fig.2 (not shown) on a frame (36) and are interconnected to permit current to pass in series through the wires creating a magnetic field to supplement that of coils 12, 14. Sputtering takes place in argon where after cleaning with shutter 29 open and shutter 31 closed, a high frequency voltage is applied to the grid sputtering the silicon oxide on to the substrate and finally with the voltage on the anode and grid the same sputtering material 18 on to the substrate. In another embodiment the grid forms part of a coil enclosing the anode which creates a magnetic field instead of coils 12, 14.
GB5175264A 1963-12-23 1964-12-21 Sputtering method Expired GB1069977A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33259063A 1963-12-23 1963-12-23

Publications (1)

Publication Number Publication Date
GB1069977A true GB1069977A (en) 1967-05-24

Family

ID=23298908

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5175264A Expired GB1069977A (en) 1963-12-23 1964-12-21 Sputtering method

Country Status (1)

Country Link
GB (1) GB1069977A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2346155A (en) * 1999-01-06 2000-08-02 Trikon Holdings Ltd Sputtering apparatus
CN101494151A (en) * 2009-03-05 2009-07-29 苏州晶能科技有限公司 Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2346155A (en) * 1999-01-06 2000-08-02 Trikon Holdings Ltd Sputtering apparatus
GB2346155B (en) * 1999-01-06 2003-06-25 Trikon Holdings Ltd Sputtering apparatus
US6660140B2 (en) 1999-01-06 2003-12-09 Trikon Holdings Limited Sputtering apparatus
CN101494151A (en) * 2009-03-05 2009-07-29 苏州晶能科技有限公司 Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency
CN101494151B (en) * 2009-03-05 2013-11-13 苏州晶能科技有限公司 Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency

Similar Documents

Publication Publication Date Title
US3291715A (en) Apparatus for cathode sputtering including a plasmaconfining chamber
US2146025A (en) Coating by cathode disintegration
US3361659A (en) Process of depositing thin films by cathode sputtering using a controlled grid
JPS61190070A (en) Sputter device
US3369991A (en) Apparatus for cathode sputtering including a shielded rf electrode
US1584728A (en) Method of manufacturing mirrors
US4065370A (en) Method of ion plating a thin metallic strip for flashlamp starting
US3525680A (en) Method and apparatus for the radio frequency sputtering of dielectric materials
US2337569A (en) Method of producing mosaic electrodes
GB1069977A (en) Sputtering method
JPS6012426B2 (en) Magnetic field compression type magnetron sputtering equipment
US2309953A (en) Electric switch
GB1214767A (en) A vacuum deposition apparatus
GB560574A (en) Improvements in and relating to electric discharge devices
US3649501A (en) Preparation of single crystal films of lithium niobate by radio frequency sputtering
George A New Type of Hot Cathode Oscillograph and its Application to the Automatic. Recording of Lightning and Switching Surges
Acker et al. Some Experimental Observations of the Propagation of Streamers in``Low Field''Regions of an Asymmetrical Gap
US2060584A (en) Electric light
US2211325A (en) Oscillograph
US1910560A (en) Cathode ray oscillograph
JPS5586060A (en) Ion detector for mass spectrometer
GB1027786A (en) Improvements in vacuum type electric circuit interrupters
GB1158276A (en) Mass Spectrometers Using Electrically Adjustable Slits.
GB1006076A (en) Improvements in or relating to methods of forming a pattern of conducting material ona substantially insulating support
US3436256A (en) Method of forming a superconducting metallic film