CN103695868B - The linear plasma reinforced chemical vapor deposition system of long-range mirror-magnetic field fetter - Google Patents
The linear plasma reinforced chemical vapor deposition system of long-range mirror-magnetic field fetter Download PDFInfo
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- CN103695868B CN103695868B CN201310688648.8A CN201310688648A CN103695868B CN 103695868 B CN103695868 B CN 103695868B CN 201310688648 A CN201310688648 A CN 201310688648A CN 103695868 B CN103695868 B CN 103695868B
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Abstract
The invention discloses a kind of remotely magnetic mirror and retrain linear plasma reinforced chemical vapor deposition system, include deposit cavity, deposit cavity is divided into plasma generating region, material surface treatment region, the top of deposit cavity and be respectively provided on two sides with a block permanent magnet, the plasma generating region of deposit cavity is provided with the upper and lower air inlet pipe being connected with source of the gas and the coaxial circles waveguide being connected with coaxial microwave source, being provided with chip bench in the material surface treatment region of deposit cavity, the bottom of deposit cavity is provided with vacuum pump set; When the linear mirror-magnetic field fetter that permanent magnet assembly produces, using coaxial circles waveguide to excite working gas to produce Linear extended microwave plasma in deposit cavity, passed into working gas substrate surface on chip bench under Linear extended microwave plasma effect forms thin film. The present invention can realize the large scale uniform deposition of semiconductive thin film, doped semiconductor films, realizes the deposition rapidly, continuously of thin film by remotely passing into reacting gas, it is easy to accomplish industrialization produces continuously.
Description
Technical field
The invention belongs to plasma and thin-film material field of scientific study, be specifically related to a kind of remotely magnetic mirror and retrain linear plasma reinforced chemical vapor deposition system.
Background technology
Low temperature plasma strengthens chemical vapour deposition technique (PlasmaEnhancedChemicalVaporDeposition, PECVD) developing rapidly in the application of the field such as large scale integrated circuit, solar energy film photovoltaic cell, flat faced display, material surface modifying, functional group grafting and fuel cell ion exchange membrane, people need a kind of to produce high deposition/etch speed, Large-Area-Uniform, stable low temperature plasma generation technique urgently. In order to technically make a breakthrough at this, domestic and international plasma industry experts makes unremitting effort for this, have employed a variety of method: one, adopt more superior plasma discharge driving source, such as DC source of energization, low frequency (~ 500kHz) driving source, radio frequency (~ 13.56MHz) driving source, very high frequency(VHF) (~ 60MHz) driving source, hyperfrequency (~ 500MHz) driving source, double frequency (13.56MHz+27.12MHz etc.) driving source, and microwave (~ 2.45GHz) driving source etc.;Its two, adopt more superior electric discharge bit-type, for instance do plasma excitation source with radio frequency, it is possible to adopt have electrode capacitance/inductive radio-frequency discharge, it would however also be possible to employ electrodeless inductively-coupled discharge and Helical wave discharge etc.; Its three, adopt magnetic field enhancing/confined discharge, for instance with microwave driving source, it is possible to adopt divergent magnetic field bit-type, it would however also be possible to employ multi-stage magnetic field bit-type etc.; Its important purpose is to obtain the plasma source that high density, Large-Area-Uniform are stable. In general, improve plasma excitation source frequency and can obtain high plasma cut-off density, be beneficial to raising plasma density and reduce ion energy, and then improving deposition/etch speed, reduce the ion bom bardment damage etc. to thin film. But improve driving source frequency simultaneously and there are some problems, for instance the sedimentation rate that electrode surface standing wave (TEM ripple) and evanescent waveguide pattern (TE ripple) cause is uneven.
In recent years, a kind of linear plasma source causes domestic and international expert and pays close attention to widely. Different from traditional large area (two-dimensional direction) and large volume (three-dimensional) plasma source, linear plasma source only need to upwards realize uniform, stable plasma at one-dimensional square, adopt multiple linear plasma source side by side, or with plated sample in horizontal/vertical directions with suitable speed uniform motion, the thin film deposition of Large-Area-Uniform can be formed. This structure greatly reduces the development difficulty of high performance plasmas deposition of thin film device, but there is Kelvin effect when depositing some quasiconductor or doped semiconductor and be unfavorable for that the seriality of plated film is run.
Summary of the invention
For the weak point in above-mentioned pecvd process, the invention provides a kind of remotely linear high-density plasma reinforced chemical gas-phase deposition system of mirror-magnetic field fetter, the equipment of the employing present invention and technique can realize the deposition of semiconductive thin film, doped semiconductor films, the outstanding feature of the present invention is the deposition that the linear plasma of mirror-magnetic field fetter can provide high density, large scale thin film, realize the deposition rapidly, continuously of thin film by remotely passing into reacting gas, and be easily achieved industrialization and produce continuously.
The technical solution used in the present invention is:
A kind of remotely magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: include the deposit cavity of convex shape, deposit cavity is divided into, lower two parts region, respectively plasma generating region, material surface treatment region, the top of deposit cavity is provided with the first permanent magnet, the plasma generating region of deposit cavity be respectively provided on two sides with second, 3rd permanent magnet, the direction of magnetization of the first permanent magnet and second, the direction of magnetization of the 3rd permanent magnet is contrary, deposit cavity is provided with the enterprising trachea being connected with source of the gas leading in plasma generating region, lower inlet duct, enterprising trachea, the coaxial circles waveguide being connected with coaxial microwave source of whole plasma generating region it is provided with through between lower inlet duct, the material surface treatment region of deposit cavity is provided with chip bench, a left side for the material surface treatment region of deposit cavity, right two side is respectively equipped with watch window, rectangle deposition chamber door, the bottom of deposit cavity is provided with vacuum pump set, first, second and third described permanent magnet composition is the permanent magnet group of arrangement in door font, when the linear mirror-magnetic field fetter that permanent magnet assembly produces, the coaxial circles waveguide being connected with coaxial microwave source is used to excite working gas to produce Linear extended microwave plasma in deposit cavity, obtaining, plasma density is improved on the basis of one-dimensional direction homogeneous plasma further, and then improving plasma-deposited speed further, passed into working gas substrate surface on chip bench under Linear extended microwave plasma effect forms thin film.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: the upper and lower end of the first described permanent magnet respectively N pole, S pole, the upper and lower end of second and third permanent magnet respectively S pole, N pole;Each permanent magnet is rectangle cylinder, and material is the magnetic materials such as rubidium ferrum boron.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: described deposit cavity is the vacuum cavity of magnetism-free stainless steel.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: described chip bench is rectangle stainless steel substrate platform, and chip bench can heat; Direct current, exchange or radio-frequency power supply can also be used to be biased.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: the linear electrode in described coaxial microwave source is in deposit cavity.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: described working gas is mixing gas or the methane of argon, hydrogen, hydrogen and silane.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: described plasma generating region and chip bench have certain distance, chip bench to be in remote plasma generating region.
Plasma reinforced chemical vapor deposition system energy multiple-unit use, or move in parallel plasma source, or move in parallel chip bench substrate, it is achieved large-area uniform high-density plasma chemical vapour deposition (CVD).
The operation principle of the present invention is:
By the present invention in that using rectangle cavity body structure, cavity top is narrower coaxial microwave plasma generation area, bottom is then more spacious working region, realizes producing the linear plasma enhanced chemical vapor deposition of single unit. But plasma spreads to vacuum chamber body wall when not having magnetically confined, uniformity is bad on the one hand, can reduce plasma density in the recombination losses of wall on the other hand. Therefore, in order to improve uniformity and the plasma density of linear plasma, reduce recombination losses, thus introducing magnetic mirror type magnetic field configuration. Using three blocks of bar magnets to be arranged in outside plasma slab cavity, wherein two pieces are positioned at microwave cavity both sides, and one piece is positioned at microwave cavity top, the direction of magnetization along being perpendicular to the direction of chip bench, and top and both sides magnet magnetized in opposite direction. Designed by appropriately distance and the intensity of magnetization, it is possible to obtain magnetic mirror type magnetic field configuration low between the persistent erection of the penis of upper and lower two ends. Such plasma can be limited in magnetic mirror, thus decreasing the generation of wall compound. The introducing in magnetic field too increases the mean free path of electronics, thus adds the collision cross-section of electronics, and plasma density is improved. Can heat, can control the energy of plasma intermediate ion and active group further by biased chip bench, improve the controllability of deposition.
The invention have the advantage that
The present invention adopts linear magnetic-mirror field magnetic field configuration, improves plasma density and large-area uniformity, can realize the deposition rapidly, continuously of the multiple thin dielectric film such as silicon, carbon; Only need upwards to realize uniform, stable plasma at one-dimensional square, adopt multiple linear plasma source side by side, or with plated sample in horizontal/vertical directions with suitable speed uniform motion, the thin film deposition of Large-Area-Uniform can be formed; This structure greatly reduces the development difficulty of high performance plasmas deposition of thin film device, need not maintain by high power, not only reduce cost, also improve feasibility and motility compared with tradition large area and large volume plasma source.
Accompanying drawing explanation
Fig. 1 is the transverse sectional view that long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system.
Fig. 2 is the longitudinal cross-section schematic diagram that long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system.
Fig. 3 is the magnetic field component schematic diagram that long-range magnetic mirror retrains linear plasma source.
Fig. 4 is the magnetic mirror shape magnetic field configuration distribution that long-range magnetic mirror retrains linear plasma source.
Detailed description of the invention
Below in conjunction with drawings and Examples being described in detail the present invention.
Embodiment
As depicted in figs. 1 and 2, long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, including the air inlet pipe 1 and 3 being connected with source of the gas, the coaxial circles waveguide 2 being connected with coaxial microwave source, " convex " font magnetism-free stainless steel vacuum cavity 11, rectangle deposition chamber door 4, watch window 7, built-in heat, biasing chip bench 5, vacuum pump set 6, and the magnetic field component of permanent magnet 8,9,10 composition. This long-range magnetic mirror retrains in linear plasma reinforced chemical vapor deposition system, uses mechanical pump-molecular pump cascade vacuum pump set 6 evacuation, and base vacuum is up to 10-4Pa magnitude. Working gas for depositing enters in vacuum chamber by enterprising trachea 1 and lower inlet duct 3, wherein noble gas and reducibility gas are by air inlet pipe 1, reactive precursor gases enters plasma downstream region by air inlet pipe 3, and the design of such gas circuit contributes to reducing the pollution in deposition process, microwave cavity produced. Coaxial circles waveguide 2 two ends connect with the coaxial microwave source of 2.45GHz respectively, to reduce the plasma nonuniformity using single microwave source to cause because of microwave decay in the waveguide. The position of chip bench 5 can according to different operating mode up-down adjustment to obtain optimum deposition condition, can to silicon by external heating power supply, can also with direct current, exchange, radio-frequency power supply connects and substrate is formed bias, is achieved in that the optimal deposition energy controlling to arrive ion and active group on substrate. The length of rectangle deposit cavity door 4 and height match with the size of deposit cavity 11, it is possible to put into or take out large-sized backing material. Can finder plasma discharge situation by watch window 7, it is possible to the window as spectral instrument diagnoses plasma parameter. Three block permanent magnets 8,9,10 are used for improving density and the uniformity of plasma by the magnetic mirror type magnetic field configuration that suitable combination is formed.
As it is shown on figure 3, magnetic field component is made up of permanent magnet 8,9,10. As shown in FIG., the direction of magnetization of both sides magnet 8,9 is contrary with upper magnet 10 for their direction of magnetization. The magnetic field intensity of the rubidium iron boron magnet used is controlled by the intensity of magnetization and Magnet size, the longitudinal length of Magnet much larger than lateral dimension to form linear magnetic mirror type magnetic field configuration.
As shown in Figure 4, being the magnetic field configuration cross section that produces in space of magnetic field component, the upper and lower side magnetic line of force is intensive, and the middle magnetic line of force is relatively sparse, is typical magnetic mirror type magnetic field configuration.
Claims (7)
1. a long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: include the deposit cavity of convex shape, deposit cavity is divided into, lower two parts region, respectively plasma generating region, material surface treatment region, the top of deposit cavity is provided with the first permanent magnet, the plasma generating region of deposit cavity be respectively provided on two sides with second, 3rd permanent magnet, the direction of magnetization of the first permanent magnet and second, the direction of magnetization of the 3rd permanent magnet is contrary, deposit cavity is provided with the enterprising trachea being connected with source of the gas leading in plasma generating region, lower inlet duct, enterprising trachea, the coaxial circles waveguide being connected with coaxial microwave source of whole plasma generating region it is provided with through between lower inlet duct, the material surface treatment region of deposit cavity is provided with chip bench, a left side for the material surface treatment region of deposit cavity, right two side is respectively equipped with watch window, rectangle deposition chamber door, the bottom of deposit cavity is provided with vacuum pump set, first, second and third described permanent magnet composition is the permanent magnet group of arrangement in door font, when the linear mirror-magnetic field fetter that permanent magnet assembly produces, using the coaxial circles waveguide being connected with coaxial microwave source to excite working gas to produce Linear extended microwave plasma in deposit cavity, passed into working gas substrate surface on chip bench under Linear extended microwave plasma effect forms thin film.
2. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: the upper and lower end of the first described permanent magnet respectively N pole, S pole, the upper and lower end of second and third permanent magnet respectively S pole, N pole;Each permanent magnet is rectangle cylinder, and material is rubidium Fe-Mn magnetism material.
3. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: described deposit cavity is the vacuum cavity of magnetism-free stainless steel.
4. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: described chip bench is rectangle stainless steel substrate platform, and chip bench can heat; Could be used that direct current, exchange or radio-frequency power supply are biased.
5. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: the linear electrode in described coaxial microwave source is in deposit cavity.
6. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: described working gas is mixing gas or the methane of argon, hydrogen, hydrogen and silane.
7. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterised in that: described plasma generating region and chip bench have certain distance, chip bench to be in remote plasma generating region.
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| CN104375292A (en) * | 2014-11-19 | 2015-02-25 | 深圳市华星光电技术有限公司 | Vacuum reaction cavity of vacuum machine and vacuum machine |
| CN105704902B (en) * | 2014-11-27 | 2018-02-16 | 中国科学院空间科学与应用研究中心 | A kind of combined magnetic constrains linear hollow cathode discharge device |
| CN105088196A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Large-area and high-density microwave plasma generating device |
| CN105088195A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Method for fast free-radical-enhanced chemical vapor deposition of thin films |
| CN107012448B (en) * | 2017-03-31 | 2019-02-26 | 郑州新世纪材料基因组工程研究院有限公司 | A kind of radio frequency plasma enhancing chemical vapor deposition method and device |
| CN107202787A (en) * | 2017-06-06 | 2017-09-26 | 浙江大学 | A kind of dipulse excites magnetic field space double constraints to strengthen the spectrum detection device of plasma |
| CN107301942B (en) * | 2017-07-11 | 2019-03-08 | 四川恒创博联科技有限责任公司 | A kind of plasma modification ultrafiltration membrane treatment system |
| CN109302791B (en) * | 2018-10-26 | 2023-08-22 | 中国科学院合肥物质科学研究院 | Microwave antenna regulation and control magnetic enhancement linear plasma source generation system |
| CN114351123A (en) * | 2021-12-15 | 2022-04-15 | 北京博纳晶科科技有限公司 | Large-cavity multifunctional chemical vapor deposition equipment and use method |
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| CN1417375A (en) * | 2002-12-13 | 2003-05-14 | 北京工业大学 | Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition |
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| JPH0485815A (en) * | 1990-07-26 | 1992-03-18 | Ricoh Co Ltd | Formation of film through microwave plasma cvd method and device therefor |
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| CN1417375A (en) * | 2002-12-13 | 2003-05-14 | 北京工业大学 | Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition |
Non-Patent Citations (2)
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| "Large area microwave coating technology";M.Liehr et al.;《Thin solid films》;20050825;第502卷;第9-14页 * |
| "Research progress of the linear plasma source used in the films deposition over large areas";Xiao Zuo et al.;《Applied physics》;20121031;第2卷;第109-115页 * |
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