CN111341700A - Shared cleaning module, polishing equipment and integrated circuit manufacturing system - Google Patents
Shared cleaning module, polishing equipment and integrated circuit manufacturing system Download PDFInfo
- Publication number
- CN111341700A CN111341700A CN202010162266.1A CN202010162266A CN111341700A CN 111341700 A CN111341700 A CN 111341700A CN 202010162266 A CN202010162266 A CN 202010162266A CN 111341700 A CN111341700 A CN 111341700A
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- cleaning
- assembly
- polishing
- plasma cleaning
- plasma
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- 238000004140 cleaning Methods 0.000 title claims abstract description 104
- 238000005498 polishing Methods 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims description 19
- 230000000712 assembly Effects 0.000 claims description 7
- 238000000429 assembly Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 abstract description 19
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 19
- 239000000758 substrate Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 230000001680 brushing effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of integrated circuit manufacturing, in particular to a common cleaning module, polishing equipment and an integrated circuit manufacturing system. The shared cleaning module comprises a plasma cleaning assembly and a transmission assembly, and the transmission assembly is connected with the plasma cleaning assembly and the at least two polishing modules. The plasma cleaning assembly is shared by the plurality of polishing modules, so that the occupied area of the whole polishing equipment can be reduced, and compared with the chemical mechanical polishing cleaning module in the prior art, the structure is simpler, the manufacturing difficulty of a mechanical structure is greatly reduced, the production and manufacturing cost is lower, and the maintenance is convenient; moreover, the cleaning time is short, the yield is high after the plasma cleaning, and the performance and the reliability of the electronic device are rarely influenced; no pollution of other impurities caused by cleaning with chemical solution, and reduced influence of chemical solution on wafer and environmental pollution.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a common cleaning module, polishing equipment and an integrated circuit manufacturing system.
Background
Integrated circuit fabrication processes generally refer to the deposition of conductor, semiconductor, and insulator layers on a particular substrate (e.g., a silicon-based wafer) in a process sequence. In the manufacturing process, a CMP (chemical mechanical polishing) apparatus is mainly used to perform global planarization on a microscopically rough surface of a wafer after a film deposition process in order to perform a subsequent semiconductor process. The CMP (chemical mechanical polishing) cleaning mainly cleans wafers after a polishing process is completed, and mainly comprises the following functional modules: a wafer transmission unit, a megasonic cleaning unit, a scrubbing cleaning unit, a chemical liquid supply unit, etc. In the process, firstly, the megasonic generator generates vibration to the cleaning chemical solution, and the temperature and the chemical solution concentration in the tank body are in a proper range, thereby ensuring the cleaning effect. And then the wafer is subjected to two brushing processes by the brushing unit in cooperation with the cleaning chemical solution. The number of modules in the CMP cleaning process is large, so that the CMP cleaning equipment has a complex structure, is complex to process, manufacture and maintain, has a large equipment volume and occupies a large production space; the CMP cleaning comprises chemical liquid cleaning and scrubbing cleaning, the cleaning time is long after two times of cleaning, the cleaning effect is poor due to the residue of the chemical liquid, and the yield is low; chemical solution cleaning also causes other impurities to pollute wafers after the process is finished, and improper chemical solution post-treatment can seriously pollute the environment. In the prior art, a plasma cleaning machine can clean a wafer which is polished, the plasma cleaning machine can achieve the effect which cannot be achieved by a conventional cleaning method, and the wafer polishing machine has the advantages of high cleaning speed, no pollution to wafers after cleaning and good cleaning effect. However, when the plasma cleaning is used instead of the CMP cleaning, the plasma cleaning speed is fast, so that the standby waiting time of the plasma cleaning machine is long, and the utilization rate of the plasma cleaning machine is low.
Disclosure of Invention
Therefore, the invention provides the common cleaning module with high equipment utilization rate, small occupied space, good cleaning effect and high yield, the polishing equipment with the common cleaning module and the integrated circuit manufacturing system.
In order to solve the problems, the common cleaning module comprises a plasma cleaning assembly and a transmission assembly, wherein the transmission assembly is connected with the plasma cleaning assembly and at least two polishing modules.
The transmission assemblies are at least two, and one transmission assembly is connected with the corresponding polishing module and the plasma cleaning assembly.
Wherein, still include setting up the drying assembly between transport subassembly and plasma washs the subassembly.
Wherein the drying assembly has one.
The plasma cleaning assembly comprises a plasma cleaning chamber, and the drying assembly is arranged on the upper side of the plasma cleaning chamber.
Wherein the plasma cleaning assembly further comprises a vacuum system disposed on an underside of the plasma cleaning chamber.
The plasma cleaning assembly is connected with the two polishing modules through the two transmission assemblies.
The transmission assembly comprises a three-degree-of-freedom moving mechanism and a film conveying manipulator.
The optical equipment comprises the polishing module and the shared cleaning module.
The integrated circuit manufacturing system comprises the polishing device.
The technical scheme of the invention has the following advantages:
1. the shared cleaning module comprises a plasma cleaning assembly and a transmission assembly, wherein the transmission assembly is connected with the plasma cleaning assembly and at least two polishing modules. In the integrated circuit manufacturing process, the micro rough surface after the substrate film deposition process is subjected to global planarization treatment so as to perform the subsequent semiconductor process, wherein the global planarization treatment comprises a polishing process and a subsequent cleaning process. The plasma cleaning assembly is shared by the plurality of polishing modules, so that the occupied area of the whole polishing equipment can be reduced, and compared with the chemical mechanical polishing cleaning module in the prior art, the structure is simpler, the manufacturing difficulty of a mechanical structure is greatly reduced, the production and manufacturing cost is lower, and the maintenance is convenient; moreover, the cleaning time is short, the yield is high after the plasma cleaning, and the performance and the reliability of the electronic device are rarely influenced; no pollution of other impurities caused by cleaning with chemical solution, and reduced influence of chemical solution on wafer and environmental pollution.
2. According to the arrangement of the drying assembly in the common cleaning module, in addition to drying the wafer, when a part of the polishing modules are in failure, the residual substrates processed by the polishing modules can be stored in the drying assembly, and other substrates needing to be cleaned can also be received.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a perspective view of a common cleaning module according to the present invention;
FIG. 2 is a schematic structural diagram of a front view of a common cleaning module according to the present invention;
FIG. 3 is a schematic structural view of a perspective view of the polishing apparatus of the present invention;
description of reference numerals:
1-a transmission assembly; 2-polishing module; 3-a drying component; 4-plasma cleaning the chamber; 5-a vacuum system; 6-sheet conveying manipulator; 7-a fixing frame; 8-plasma cleaning the assembly.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
The integrated circuit fabrication system of this embodiment, in which a polishing apparatus is used, deposits conductors, semiconductors, insulating layers, etc. on a particular substrate (e.g., a silicon-based wafer) in a process sequence. The polishing equipment is mainly used for carrying out global planarization treatment on the microscopic rough surface of a substrate (such as a silicon-based wafer) after a film deposition process so as to carry out a subsequent semiconductor process. The polishing apparatus includes a polishing module 2 and a common cleaning module, and a cleaning process is performed after the polishing process.
The common cleaning module in this embodiment includes a plasma cleaning assembly 8, a drying assembly 3, and two transmission assemblies 1, where the two polishing modules 2 are connected to the drying assembly 3 through the two transmission assemblies 1, respectively, and the drying assembly 3 is connected to the plasma cleaning assembly 8.
In this embodiment, there is one drying assembly 3. Of course, depending on the process requirements, it is also possible to provide two, three or four drying assemblies 3,
In this embodiment, the transmission assembly 1 includes a three-degree-of-freedom moving mechanism and a film conveying manipulator 6, and certainly, in order to ensure that the height of the film conveying manipulator 6 is appropriate, a fixing frame 7 may be provided to support the film conveying manipulator 6 and the three-degree-of-freedom moving mechanism. The three-degree-of-freedom moving mechanism is the prior art and is not described in detail.
As an alternative embodiment, the plasma cleaning module 8 can be connected to three or four etc. polishing modules 2 by means of a plurality of transport modules 1, as long as the time matching between the production processes is satisfied.
Referring to fig. 1, 2 and 3, the side of the polishing apparatus is connected to a drying module 3 and a plasma cleaning module 8 through a transfer module 1.
During a cleaning process, firstly, a substrate after the polishing process in the polishing module 2 is transmitted into the drying assembly 3 by the three-degree-of-freedom moving mechanism and the wafer conveying manipulator 6 with the clamping jaws, and the substrate is subjected to processes such as spin-drying, heating and the like; transferring the substrate into a plasma cleaning chamber 4, then performing vacuum pumping operation by a vacuum system 5, and cleaning the substrate in the plasma cleaning chamber 4; after the cleaning, the wafer transfer robot 6 transfers the wafer to the next process.
When the plasma cleaning component 8 works, the plasma cleaning chamber 4 forms ion state gas by ionizing the process gas under high pressure in a vacuum state, and the ion state gas is used for bombarding and removing attachments on the surface of the wafer so as to achieve the effect of cleaning the wafer. The two polishing modules 2 share one plasma cleaning component 8, so that the occupied area of the whole polishing device can be reduced, and compared with the chemical mechanical polishing cleaning module in the prior art, the structure is simpler, the manufacturing difficulty of a mechanical structure is greatly reduced, the production and manufacturing cost is lower, and the maintenance is convenient; moreover, the cleaning time is short, the yield is high after the plasma cleaning, and the performance and the reliability of the electronic device are rarely influenced; no pollution of other impurities caused by cleaning with chemical solution, and reduced influence of chemical solution on wafer and environmental pollution.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A common cleaning module is characterized by comprising a plasma cleaning assembly (8) and a transmission assembly (1), wherein the transmission assembly (1) is connected with the plasma cleaning assembly (8) and at least two polishing modules (2).
2. The common cleaning module according to claim 1, wherein the transfer assembly (1) has at least two, one transfer assembly (1) connecting a corresponding one of the polishing module (2) and the plasma cleaning assembly (8).
3. Common cleaning module according to claim 1, characterized by further comprising a drying assembly (3) arranged between the transport assembly (1) and the plasma cleaning assembly (8).
4. A common cleaning module according to claim 3, characterized in that there is one of said drying assemblies (3).
5. Common cleaning module according to claim 3, characterized in that the plasma cleaning assembly (8) comprises a plasma cleaning chamber (4), the upper side of the plasma cleaning chamber (4) being provided with the drying assembly (3).
6. The common cleaning module according to claim 5, characterized in that the plasma cleaning assembly (8) further comprises a vacuum system (5) arranged at the lower side of the plasma cleaning chamber (4).
7. A common cleaning module according to any of claims 1-6, characterized in that there are two each of the transport assembly (1) and the polishing module (2), and the plasma cleaning assembly (8) is connected to both of the polishing modules (2) via the two transport assemblies (1).
8. A common cleaning module according to claim 7, characterized in that the transport assembly (1) comprises a three-degree-of-freedom moving mechanism and a sheet conveying robot (6).
9. A polishing apparatus, characterized by comprising a polishing module (2) and a common cleaning module according to any one of claims 1-8.
10. An integrated circuit manufacturing system comprising the polishing apparatus as recited in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010162266.1A CN111341700A (en) | 2020-03-10 | 2020-03-10 | Shared cleaning module, polishing equipment and integrated circuit manufacturing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010162266.1A CN111341700A (en) | 2020-03-10 | 2020-03-10 | Shared cleaning module, polishing equipment and integrated circuit manufacturing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111341700A true CN111341700A (en) | 2020-06-26 |
Family
ID=71184022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010162266.1A Pending CN111341700A (en) | 2020-03-10 | 2020-03-10 | Shared cleaning module, polishing equipment and integrated circuit manufacturing system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111341700A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1111659A2 (en) * | 1999-11-24 | 2001-06-27 | Applied Materials, Inc. | Apparatus and methods of chemical mechanical polishing |
| US20020037684A1 (en) * | 2000-09-27 | 2002-03-28 | Hitachi, Ltd. | Dry chemical-mechanical polishing method |
| CN1531747A (en) * | 2001-03-14 | 2004-09-22 | 美商・应用材料股份有限公司 | Planarization of substrates using electrochemical mechanical polishing |
| CN101136316A (en) * | 2006-08-31 | 2008-03-05 | 东部高科股份有限公司 | Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device using the same |
| CN101257997A (en) * | 2005-09-09 | 2008-09-03 | 英诺普雷股份有限公司 | Apparatus and method for polishing objects using object cleaners |
| US20090011572A1 (en) * | 2006-03-03 | 2009-01-08 | Tokyo Seimitsu Co. | Wafer Working Method |
| CN101494151A (en) * | 2009-03-05 | 2009-07-29 | 苏州晶能科技有限公司 | Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency |
| CN108698193A (en) * | 2016-09-14 | 2018-10-23 | 清华大学 | Chemical-mechanical polishing system |
-
2020
- 2020-03-10 CN CN202010162266.1A patent/CN111341700A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1111659A2 (en) * | 1999-11-24 | 2001-06-27 | Applied Materials, Inc. | Apparatus and methods of chemical mechanical polishing |
| US20020037684A1 (en) * | 2000-09-27 | 2002-03-28 | Hitachi, Ltd. | Dry chemical-mechanical polishing method |
| CN1531747A (en) * | 2001-03-14 | 2004-09-22 | 美商・应用材料股份有限公司 | Planarization of substrates using electrochemical mechanical polishing |
| CN101257997A (en) * | 2005-09-09 | 2008-09-03 | 英诺普雷股份有限公司 | Apparatus and method for polishing objects using object cleaners |
| US20090011572A1 (en) * | 2006-03-03 | 2009-01-08 | Tokyo Seimitsu Co. | Wafer Working Method |
| CN101136316A (en) * | 2006-08-31 | 2008-03-05 | 东部高科股份有限公司 | Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device using the same |
| CN101494151A (en) * | 2009-03-05 | 2009-07-29 | 苏州晶能科技有限公司 | Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency |
| CN108698193A (en) * | 2016-09-14 | 2018-10-23 | 清华大学 | Chemical-mechanical polishing system |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 100176 101, floor 2, building 2, No. 1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing Applicant after: Beijing Jingyi Precision Technology Co.,Ltd. Address before: No.1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing, 100176 Applicant before: Beijing ShuoKe precision electronic equipment Co.,Ltd. |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200626 |
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| RJ01 | Rejection of invention patent application after publication |