CN210928112U

CN210928112U - Microwave plasma generating device

Info

Publication number: CN210928112U
Application number: CN201921824316.7U
Authority: CN
Inventors: 周小影; 汪锋
Original assignee: Anhui Feynman Technology Co ltd
Current assignee: Anhui Feynman Technology Co ltd
Priority date: 2019-10-28
Filing date: 2019-10-28
Publication date: 2020-07-03
Anticipated expiration: 2029-10-28

Abstract

A microwave plasma generating device can solve the technical problem that the plasma density of the existing plasma reaction device is not high enough. The device comprises a wave source connected with a vacuum cavity structure through a conduit, wherein the vacuum cavity structure is respectively communicated with a vacuum pumping system and an air inlet system; a sample table is arranged in the vacuum cavity structure and used for placing a sample; the vacuum cavity structure is also communicated with a vacuum measurement system; and a magnet is arranged outside the vacuum cavity structure. The utility model discloses a setting can axial displacement's magnet, changes the magnetic field position type, and then changes the distribution state of the plasma that is retrained to satisfy the experimental parameters of different demands.

Description

Microwave plasma generating device

Technical Field

The utility model relates to a microwave plasma technical field, concretely relates to microwave plasma generating device.

Background

Plasma is a fourth state of matter, which is a system of many charged particles that can flow; the plasma modifies the surface of the material, the surface structure of the material is optimized by discharging the plasma, and the method is a very advanced material surface modification method; the special performance of the low-temperature plasma can modify the surfaces of materials such as metal, semiconductor, high polymer materials and the like, and the technology is widely applied to the fields of motors, machinery, textiles and the like.

The state of the plasma mainly depends on the chemical composition, ion density and particle temperature, while the particle density is the most important index when the low-temperature plasma technology is applied to the surface modification of materials, and the problem that the plasma is required to be continuously provided is that the environment of a reaction device is clean, the plasma density is high, the plasma can stably run, and the plasma is required to be continuously provided in the surface modification of materials.

There are several plasma sources currently used: the plasma source comprises a hot cathode plasma source, an external electrode type radio frequency glow discharge source, an electron cyclotron resonance microwave plasma source and the like, wherein the electron cyclotron resonance microwave plasma source can stably provide cleaning plasma; however, how to increase the plasma beam density under the same power is a continuous pursuit of researchers to provide a device for modifying materials, which satisfies experimental conditions.

SUMMERY OF THE UTILITY MODEL

The utility model provides a microwave plasma generating device can solve the not high enough technical problem of current plasma reaction unit plasma density.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a microwave plasma generating device comprises a wave source connected with a vacuum cavity structure through a conduit, wherein the vacuum cavity structure is respectively communicated with a vacuum air pumping system and an air inlet system;

a sample table is arranged in the vacuum cavity structure and used for placing a sample;

the vacuum cavity structure is also communicated with a vacuum measurement system;

and a magnet is arranged outside the vacuum cavity structure.

Furthermore, the magnet is of an annular structure and is sleeved outside the vacuum cavity structure.

Furthermore, the gauge pipe in the vacuum measuring system is communicated with the vacuum cavity structure through a flange arranged on the vacuum cavity structure.

Furthermore, the sample is fixed on the sample table through an insulating screw and an insulating plate.

Furthermore, the sample stage comprises two power electrodes, and the two power electrodes are fixed on a flange and then fixed on the vacuum cavity structure through the flange.

Compared with the prior art, the beneficial effects of the utility model are that:

1. the utility model changes the magnetic field position type by arranging the magnet which can move axially, thereby changing the distribution state of the constrained plasma to meet the experimental parameters of different requirements;

2. the utility model adopts microwave heating to ionize the target gas, and no other substance is introduced, thus ensuring the cleanness of the plasma, avoiding the vacuum fluctuation caused by the pollution inside the vacuum cavity, avoiding the sample pollution to influence the effect of the plasma and the surface effect of the sample, and further avoiding the sample pollution; furthermore, the vacuum cavity does not need to be cleaned every time the sample is changed.

3. The utility model discloses a microwave source, after the gaseous flow is gone into to the stability, the debugging device discharges and produces plasma, along with the gaseous source is constantly gone into, gas is ionized into plasma, can reach the state of a steady state work, except gas loss at this in-process, does not have other material loss and production physically, so can reach steady state operation, this can only pulse operation with present a lot of plasma devices and compare, on plasma production efficiency, has very big improvement.

Drawings

Fig. 1 is a schematic structural diagram of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.

As shown in fig. 1, the microwave plasma generating apparatus according to this embodiment includes:

the microwave source 1 is connected with the vacuum chamber 2 through a standard rectangular waveguide tube, the magnet 3 is of an annular structure and is sleeved outside the circular vacuum chamber 2, a magnet support is arranged outside the vacuum chamber, a screw rod structure is arranged on the support, and the magnet axially moves along the vacuum chamber through a screw rod; the gauge in the vacuum measuring system 4 is connected through a standard CF35 flange on a vacuum cavity, a sample 6 is fixed on a sample table 5 through an insulating screw and an insulating plate, the sample table 5 is connected on the vacuum cavity through the standard CF flange, concretely, the sample table 5 is welded with the standard CF100 flange through two power electrodes, the standard CF100 flange is assembled and connected with the standard CF100 flange on the vacuum cavity 2, a vacuum pumping system 7 generally comprises a molecular pump, a gate valve and a dry pump, one side of the gate valve is connected with the standard CF200 flange of the vacuum cavity 2, the other side of the gate valve is assembled and connected with the molecular pump, and the dry pump is connected with the molecular pump through a corrugated pipe and a quick-connection KF flange. And an air inlet pipe in the air inlet system 8 is connected with a quick-connection flange on the vacuum cavity 2 through a quick-connection KF flange.

During operation, after all the components are installed in place and before operation, the leakage rate of each connecting part of the vacuum cavity is ensured to be less than 1 × 10^-10Pam³And/s, starting the vacuum pumping system 7, after the vacuum measuring system 4 displays that the vacuum degree in the vacuum cavity reaches-4 Pa, closing a molecular pump in the vacuum pumping system, starting a magnet power supply, and adjusting the power supply parameter, wherein the parameter is generally adjusted according to the conductor parameter in the magnet and can be started from a small current.

Opening a valve in the gas inlet system 8, introducing the target gas into the vacuum chamber, slowly adjusting the flow rate, observing the vacuum measurement system to display the vacuum degree in the vacuum chamber, which is generally 0.1 Pa-dozens of Pa

Starting a microwave source, feeding microwaves output by the microwave source into the vacuum cavity 2 through a standard waveguide tube from low power, generating resonance with a magnetic field generated by the magnets near 875GS (magnetic field) magnetic field, ionizing target gas to generate plasma, moving the generated plasma along magnetic lines of the magnetic field formed by coupling the two magnets, and finally bombarding a sample on the sample table; the magnetic field position type formed by coupling can be changed by adjusting the positions of the magnets along the axial direction of the vacuum cavity, generally speaking, the magnetic field position type of the two magnets at the axial position of the vacuum cavity is in a 'spinning cone shape', the plasma is restrained to be a beam with the smallest sectional area near the sample table as much as possible so as to ensure that the sample is bombarded by the largest energy, when target gas is ionized, the inside brightness generation can be seen through an observation window on the vacuum cavity 2, the shape of the plasma can also be visually observed and is consistent with the magnetic field position type, when the plasma is restrained to the required shape by adjusting the magnets, the density inside the plasma can be measured through a quick-acting probe, and the plasma density is the most important index in the application of the plasma technology.

The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims

1. A microwave plasma generating device comprises a wave source (1) connected with a vacuum cavity structure (2) through a guide pipe, and is characterized in that:

the vacuum cavity structure (2) is respectively communicated with a vacuum pumping system (7) and an air inlet system (8);

a sample table (5) is arranged inside the vacuum cavity structure (2), and the sample table (5) is used for placing a sample (6);

the vacuum cavity structure (2) is also communicated with a vacuum measurement system (4);

and a magnet (3) is arranged outside the vacuum cavity structure (2).

2. A microwave plasma generating apparatus according to claim 1, wherein: the magnet (3) is of an annular structure and is sleeved outside the vacuum cavity structure (2).

3. A microwave plasma generating apparatus according to claim 1, wherein: the gauge pipe in the vacuum measuring system (4) is communicated with the vacuum cavity structure (2) through a flange.

4. A microwave plasma generating apparatus according to claim 1, wherein: the sample (6) is fixed on the sample table (5) through arranging an insulating screw and an insulating plate.

5. A microwave plasma generating apparatus according to claim 1, wherein: the sample stage (5) comprises two power electrodes which are fixed on a flange and then fixed on the vacuum cavity structure (2) through the flange.

6. A microwave plasma generating apparatus according to claim 1, wherein: the wave source (1) is a microwave source.