CN101452925A - 半导体器件 - Google Patents

半导体器件 Download PDF

Info

Publication number
CN101452925A
CN101452925A CNA2008101843112A CN200810184311A CN101452925A CN 101452925 A CN101452925 A CN 101452925A CN A2008101843112 A CNA2008101843112 A CN A2008101843112A CN 200810184311 A CN200810184311 A CN 200810184311A CN 101452925 A CN101452925 A CN 101452925A
Authority
CN
China
Prior art keywords
semiconductor device
binding post
external connection
connection terminals
terminal block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2008101843112A
Other languages
English (en)
Other versions
CN101452925B (zh
Inventor
征矢野伸
上柳胜道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Device Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Device Technology Co Ltd filed Critical Fuji Electric Device Technology Co Ltd
Priority to CN201310053571.7A priority Critical patent/CN103151325B/zh
Publication of CN101452925A publication Critical patent/CN101452925A/zh
Application granted granted Critical
Publication of CN101452925B publication Critical patent/CN101452925B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/84201—Compression bonding
    • H01L2224/84205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/8421—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/84214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

根据本发明，有可能容易地改变设置有封装在树脂外壳中的半导体元件的半导体器件中的至少一个接线端子的布局。提供了一种半导体器件，包括：固定支撑在树脂外壳中的多个外部连接端子；封装在该树脂外壳中的IGBT元件和FWD元件；以及设置有至少一个接线端子——各IGBT元件通过它分别电连接到外部连接端子——的至少一个端子块。根据该半导体器件的配置，在设置有封装在树脂外壳中的半导体元件的半导体器件中接线端子的布局可容易地改变。

Description

半导体器件
技术领域
本发明涉及一种半导体器件。特别地，本发明涉及一种包括封装在树脂外壳中的半导体元件的半导体器件。
背景技术
在诸如逆变装置、不间断电源、加工工具或工业机器人之类的装置中，将包括安装于其中的功率半导体元件的半导体器件(通用模块)独立于该装置主体使用。这样的半导体器件具有一种功率半导体元件被密封(封装)于树脂外壳中的结构(例如参见专利文献1和2)。
接线端子(引线框)一般用于这样的半导体器件的内引线(参见专利文献3)。
例如，图11是示出包括密封在树脂外壳中的功率半导体元件的半导体器件的主要部分的示意图。图11示出通过使用接线端子内接线的半导体器件的示例。
如图11所示，该半导体器件包括设置在树脂外壳400中的IGBT(绝缘栅双极晶体管)元件100。这里提到的IGBT元件100是具有设置在其上表面中的发射极电极和设置在其下表面中的集电极电极的垂直功率半导体元件。IGBT元件100的发射极电极和布线衬底200通过接线端子600彼此导电连接。IGBT元件100的集电极电极直接导电连接到布线衬底200。
发射极电极和布线衬底200一般通过焊接、超声焊接、激光焊接等经接线端子600相互接合。
[专利文献1]JP-A-6-045518
[专利文献2]JP-A-2002-368192
[专利文献3]JP-A-2005-064441
然而在上述半导体器件中，存在的问题是不可能容易地改变接线端子600的布局。
发明内容
考虑到这一点开发了本发明。本发明的目的是提供包括封装在树脂外壳中的半导体元件及其中有可能容易地改变至少一接线端子的布局的半导体器件。
为了解决上述问题，根据本发明一方面，提供一种半导体器件，包括：固定支撑在树脂外壳中的多个外部连接端子；封装在该树脂外壳中的至少一个半导体元件；以及设置有至少一个接线端子——该半导体元件通过它电连接到外部连接端子——的至少一个端子块。
根据上述配置，有可能实现设置有封装在树脂外壳中的半导体元件以及接线端子的布局可容易地改变的半导体器件。
附图说明
图1A和1B是根据本发明第一实施例的半导体器件的主要部分的示意图；
图2是用于说明半导体器件的效果的半导体器件的主要部分的示意图(部分1)；
图3是用于说明半导体器件的效果的半导体器件的主要部分的示意图(部分2)；
图4是用于说明半导体器件的效果的半导体器件的主要部分的示意图(部分3)；
图5是用于说明半导体器件的效果的半导体器件的主要部分的示意图(部分4)；
图6是用于说明半导体器件的效果的半导体器件的主要部分的示意图(部分5)；
图7是用于说明半导体器件的效果的半导体器件的主要部分的示意图(部分6)；
图8是根据第一实施例的半导体器件的变体的主要部分的示意图；
图9A和9B是根据本发明第二实施例的半导体器件的主要部分的示意图；
图10A和10B是根据本发明第三实施例的半导体器件的主要部分的示意图；以及
图11是根据其中功率半导体元件密封在树脂外壳中的背景技术的半导体器件的主要部分的示意图。
具体实施方式
下文将参考附图具体描述关于半导体器件的本发明各实施例。
<第一实施例>
图1A和1B是示出根据本发明第一实施例的半导体器件的主要部分的示意图。图1A示出该半导体器件的俯视示意图。图1B示出该半导体器件沿图1A的虚线X-X所取并从箭头方向观看的截面图。此外，图1A和1B示出对应于逆变器电路一相的半导体模块的示例。
图1A和1B所示的半导体器件1具有作为衬底的毫米量级厚度的金属基板。各个绝缘衬底20通过无引线锡银(锡—银)类焊料层(未示出)接合和安装到金属基板10上。作为功率半导体元件的IGBT元件30a和30b及FWD元件31a和31b分别安装在绝缘衬底20的上层上。半导体器件1还具有封装有上述半导体元件的树脂外壳40等，以使半导体器件1可担当所谓的通用IGBT模块(功率模块)。
各个绝缘衬底20包括绝缘板20a、通过DCB(直接铜接合)方法在绝缘板20a下表面上形成的金属箔20b、以及通过相同的DCB方法在绝缘板20a上表面上形成的金属箔20c。
至少一个IGBT元件30a或30b通过焊料层(未示出)安装在各个绝缘衬底20的金属箔20c上，而IGBT元件30a或30b的背侧(例如集电极电极侧)接合到金属箔20c上。
发射极电极设置在IGBT元件30a或30b的与集电极电极相反的主表面上，例如在IGBT元件30a或30b的上表面侧。控制电极30g也设置在IGBT元件30a或30b上表面的一部分上。各个控制电极30g通过金属线21电连接到***模压(insert-molded)(密封)到树脂外壳40中的引脚端子(控制端子)22的一端。引脚端子22的另一端从半导体器件1向上延伸到高于树脂外壳40上表面的位置。
各个FWD元件31a或31b安装在金属箔20c上，而FWD元件31a或31b的阴极侧通过焊料层(未示出)接合到金属箔20c。FWD元件31a或31b的阳极侧设置在FWD元件31a或31b的与阴极侧相反的主表面上，即在FWD元件31a或31b的上表面上。
具有弯曲结构的整体端子23a或23b通过诸如焊接、超声焊接、激光焊接或用螺丝固定之类的一些方法布置在IGBT元件30a或30b的发射极电极(IGBT元件30a或30b的上表面侧)和FWD元件31a或31b的阳极侧(FWD元件31a或31b的上表面侧)之间。因此，通过端子23a或23b确保了IGBT元件30a或30b的发射极电极和FWD元件31a或31b的阳极侧之间的电连接。
在树脂外壳40中端子23a或23b进一步延伸到形成L形状图案的金属箔20d。端子23a或23b和金属箔20d通过焊接等方法相互电连接。
IGBT元件30a或30b的集电极电极和FWD元件31a或31b的阴极侧通过金属箔20c——在IGBT元件30a或30b和FWD元件31a或31b下设置的层——相互导电连接。
例如，各个绝缘板20a由氧化铝(Al2O3)烧结的陶瓷材料制成，而各个金属箔20b、20c和20d由包含作为主要成份的铜(Cu)的金属材料制成。例如，各个端子23a和23b由包含作为主要成份的诸如铜(Cu)或铝(Al)之类金属或其合金的材料制成。
装在金属箔20c上的半导体元件不限于上述IGBT元件30a或30b，而可包括功率MOSFET(金属氧化物半导体场效应晶体管)。
在半导体器件1中，提供例如由PPS(聚苯硫醚)制成的树脂外壳40以将其固定到金属基板10的上边缘。例如导电连接到IGBT元件30a和30b的主电极的外部连接端子50、51、52、53、54和55部分***模压到树脂外壳40中。
在半导体器件1中，将外部连接端子51和54设置成使外部连接端子51担当逆变器电路的正极输入端子(P端子)而外部连接端子54担当逆变器电路的负极输入端子(N端子)。这些外部连接端子51和54分别电连接到设置在半导体器件1外部的DC电源的正极和负极。
此外，将外部连接端子53和55设置成使外部连接端子53和55担当逆变器电路的AC输出端(例如，U相)。
虽然已对作为示例的逆变器电路进行了上述描述，但这种电路配置不限于逆变器电路而可应用于诸如斩波电路之类的其它电功率转换电路。
此外，剩下的外部连接端子50和52是备用端子。
例如，端子支座24a的一端通过焊接等方法接合到外部连接端子51。此外，端子支座24a的另一端通过焊接等方法接合到金属箔20c。
在半导体器件1中，以这种方式，在树脂外壳40中固定设置的外部连接端子51和金属箔20c通过端子支座24a相互电连接。即，外部连接端子51导电连接到IGBT元件30a的集电极电极和FWD元件31a的阴极侧。
端子支座24b的一端通过焊接等方法接合到外部连接端子54。此外，端子支座24b的另一端通过焊接等方法接合到金属箔20d。
在半导体器件1中，以这种方式，在树脂外壳40中固定设置的外部连接端子54和金属箔20d通过端子支座24b相互电连接。即，外部连接端子54导电连接到IGBT元件30b的发射极电极和FWD元件31b的阳极侧。
此外，U形接线端子(引线框)60的各端通过焊接等方法分别接合到外部连接端子53和55。接线端子60的中间部分通过焊接等方法接合到端子支座25的上表面。端子支座25的下表面通过焊接等方法接合到金属箔20c和20d。
在半导体器件1中，以这种方式，接线端子60的各端电连接到在树脂外壳40中固定设置的外部连接端子53和55。此外，接线端子60的中间部分通过端子支座25电连接到IGBT元件30a的发射极电极和FWD元件31a的阳极侧。此外，接线端子60的中间部分通过端子支座25电连接到IGBT元件30b的集电极电极和FWD元件31b的阴极侧。
此外，在半导体器件1中，上述接线端子60通过粘合剂成分(未示出)固定到绝缘板(支撑衬底)70。绝缘板70包含作为主要成份的树脂或陶瓷材料。槽口70a设置在绝缘板70的相对端部。槽口70a配合在树脂外壳40的内部端部处固定设置的固定引脚70p。
通过这样的配合，绝缘板70相对于树脂外壳40精确定位。延伸部分70c设置在绝缘板70中。延伸部分70c放置在端子支座24a和24b上，从而确保绝缘板70的水平稳定性。
用于容纳引脚端子22侧部的槽口70b也设置在绝缘板70中。槽口70b支撑引脚端子22的侧部。
用密封树脂(未示出)填充由树脂外壳40和金属基板10包围的空间以保护半导体元件、金属线21等。例如，将密封树脂提供为包含作为主要成份的凝胶或环氧树脂的树脂。
另外，例如，各个外部连接端子50、51、52、53、54和55、接线端子60和端子支座24a、24b和25由包含作为主要成份的诸如铜(Cu)或铝(Al)之类的金属或其合金的材料制成。
此外，接线端子60可***模压到绝缘板70中而不是固定到绝缘板70。
图1A和1B中所示的接线端子60和绝缘板70的组合被称为端子块(引线单元)。
如上所述，半导体器件1被表征为，半导体器件1具有固定支撑在树脂外壳40中的多个外部连接端子50、51、52、53、54和55，封装在树脂外壳40中的至少一个半导体元件(例如IGBT元件30a或30b等)，以及设置有至少一个接线端子60——该半导体元件通过其电连接到外部连接端子50、51、52、53、54和55——的至少一个端子块。
下文将给出对具有这样结构的半导体器件1的有益效果的描述。
例如，图2到7是示出该半导体器件主要部分的用于说明该半导体器件效果的示意图。
此外，在涉及下文将描述的所有实施例的附图中，由相同的标记表示和图1A和1B中一样的元件。如果这些元件曾经描述过，那么将省略这些元件的详细描述。
在半导体器件1中，首先能将接线端子60容易地拉制在树脂外壳40中。
图2示出将包括固定于其上的接线端子60的绝缘板70从半导体器件1移除之后的半导体器件1的状态，即图2示出半导体器件1a。图3示出将包括固定于其上的接线端子60的绝缘板70从半导体器件1移除之后的绝缘板70，即，图3示出端子块70b1。
例如，在图3中所示的端子块70b1定位于中图2所示的半导体器件1a上之后，使端子块70b1靠近半导体器件1a以使端子块70b1的槽口70a配合半导体器件1a的固定引脚70p。
以这种方式，端子块70b1相对于树脂外壳40精确定位。而且，绝缘板70的延伸部分70c接触到端子支座24a和24b以使绝缘板70水平稳定。
此外，将端子块70b1装到树脂外壳40中以使接线端子60的接合部分60c分别接触到外部连接端子53的接合部分53c、外部连接端子55的接合部分55c以及端子支座25的接合部分25c。绝缘板70的槽口70b容纳引脚端子22的侧部从而支撑引脚端子22的侧部。
然后，接线端子60的接合部分60c通过焊接等方法分别接合到外部连接端子53的接合部分53c、外部连接端子55的接合部分55c以及端子支座25的接合部分25c。
因此，在树脂外壳40中能容易地拉制接线端子。
在半导体器件1中，可制备具有经修改引线图案的接线端子60的数种类型的端子块70b1，从而即使当外部连接端子50、51、52、53、54和55被固定和支撑在树脂外壳40中时，从外部连接端子50、51、52、53、54和55周围拉制的各接线端子的布局可以自由改变。
例如，在图4中所示的端子块70b1中，T形接线端子60固定到绝缘板70。在这样的端子块70b1被装到图2中所示的半导体器件1a之后，接线端子60的接合部分60c通过焊接等方法分别接合到外部连接端子50的接合部分50c、外部连接端子53的接合部分53c以及端子支座25的接合部分25c。
接线端子60的这种布局允许外部连接端子50和53担当AC输出端子。
图5示出将包括固定于其上的接线端子60的绝缘板70从半导体器件1移除之后的另一半导体器件的状态。即，图5示出具有其中图2中所示的半导体器件1a的端子支座25从中间一分为二的结构的半导体器件1b。
端子块70b1也可设置在半导体器件1b中。
将针对例如其中图6所示的端子块70b1被附连到半导体器件1b的情况进行描述。在图6所示的端子块70b1中，T形接线端子60固定到绝缘板70以相互线性对称。
在这样的端子块70b1被装到图5中所示的半导体器件1b之后，接线端子60的接合部分60c通过焊接等方法分别接合到外部连接端子50的接合部分50c、外部连接端子52的接合部分52c、外部连接端子53的接合部分53c、外部连接端子55的接合部分55c以及端子支座25的接合部分25c。图7示出接合之后半导体器件2的构成。
如图7所示，半导体器件2设置有相位等不同而且分别由外部连接端子50和53的组合及外部连接端子52和55的组合形成的两组AC输出端子。
如上所述，在这个实施例中，有可能改变AC输出端子的布局从而容易地改变逆变器电路的相。
而且，在这个实施例中，该半导体器件的配置可通用于图2和5中所示的半导体器件1a和1b。如用户所需地，以多种形式制备的端子块70b1之一可被装到半导体器件1a或1b，而外部连接端子50、51、52、53、54和55可接合到相应的接线端子60以使接线端子60的布局可自由选择。
而且，要连接到外部连接端子50、51、52、53、54和55的外部引线的布局可根据用户需要自由选择。
即，固定到绝缘板70的各个接线端子60的构成可改变以使外部连接端子50、51、52、53、54和55的任一个可被设置为正极输入端子而外部连接端子50、51、52、53、54和55的任一个可被设置为负极输入端子。外部连接端子50、51、52、53、54和55的任一个可被设置为AC输出端子。而且，根据需要逆变电路的相能容易地改变。
而且，各个接线端子60的长度、宽度和厚度可被调节成引线电阻、电抗、散热等可根据电路的性能自由调节。
此外，因为端子块70b1与半导体器件1a或1b无关地设置，所以可通过不同于制造半导体器件1a或1b工艺的另一工艺将接线端子60的至少一部分——例如接线端子60的下层——镀镍(Ni)和金(Au)或镍(Ni)和锡(Sn)。
此外，半导体器件1或2可被设置为所谓的无金属基结构，其中金属基板10被去除以使绝缘衬底20用作半导体器件1的衬底以实现该半导体器件大小和重量的进一步减少。
另外，绝缘板70不限于上述构成。
例如，图8是示出作为根据第一实施例的半导体器件的变体的半导体器件3的主要部分的示意图。此外，在图8中未示出设置在树脂外壳40中的半导体元件等。
如图8所示，在半导体器件3中，外部连接端子50、51、52、53、54和55被固定并支撑在树脂外壳40中以使外部连接端子50、51和52所成直线垂直于外部连接端子53、54和55所成直线。多个接线端子60a、60b、60c和60d通过粘合剂成份(未示出)固定到L形绝缘板70。
槽口70a设置在绝缘板70中。槽口70配合在树脂外壳40中固定设置的固定引脚70p。接线端子60a、60b、60c和60d的端部通过焊接等方法分别接合到外部连接端子50、51、52和55。
如上所述，支撑接线端子60a、60b、60c和60d一部分的L形绝缘板70可被设置为端子块。
<第二实施例>
下文将描述作为半导体器件1的变体的另一半导体器件4。
图9A和9B是根据本发明第二实施例的半导体器件的主要部分的示意图。图9A示出该半导体器件的俯视示意图。图9B是示出沿图9A中的虚线X-X所取并从箭头方向观看的该半导体器件的截面图。
如图9A和9B所示，在半导体器件4中，延伸部分70W设置在绝缘板70中以使延伸部分70w包围接线端子60和端子支座25之间的接合部分的外周并担当接合到接线端子60的元件。
例如，如果微小金属块在通过焊接等方法将接线端子60接合到端子支座25时产生，则在绝缘板70中形成延伸部分70w有可能在由绝缘板70和延伸部分70w包围的空间中确定地捕获微小金属块。
因此，甚至当金属块产生时，延伸部分70w的存在可防止金属块粘附到IGBT元件30a和30b、FWD元件31a和31b、金属箔20c和20d等。因此，可以防止半导体元件的劣化、短路等。
<第三实施例>
下文将描述作为半导体器件1的变体的另一半导体器件5。
图10A和10B是根据本发明第三实施例的半导体器件的主要部分的示意图。图10A是示出该半导体器件的俯视示意图。图10B是示出沿图10A中的虚线X-X所取并从箭头方向观看的该半导体器件的截面图。
如图10A和10B所示，在半导体器件5中，金属板80被固定并选择性地设置在绝缘板70上。另外，金属板80具有延伸部分80a。延伸部分80a通过端子支座24b电连接到担当负极输入端子的外部连接端子54。
在这样的结构中，金属板80可担当用于防护从半导体元件等发射的电磁波的屏蔽板。例如，半导体器件5可稳定地操作附连到半导体器件5外部的控制电路等。
图1A和1B中示出包括附连其上的端子块70b1的半导体器件1。然而，所附连的端子块70b1的数量不限于这个数字。即，可附连多个端子块70b1以使接线端子60可三维地设置。
上述第一到第三实施例不一定是彼此无关的，而可组合至少两个实施例。

Claims (5)

1.一种半导体器件，包括：
固定支撑在树脂外壳中的多个外部连接端子；
封装在所述树脂外壳中的至少一个半导体元件；以及
设置有至少一个接线端子——所述半导体元件通过其电连接到所述外部连接端子——的至少一个端子块。
2.如权利要求1所述的半导体器件，其特征在于，所述端子块包括所述至少一个接线端子，和支撑所述接线端子的支撑衬底。
3.如权利要求1或2所述的半导体器件，其特征在于，延伸部分在所述端子块中形成以使所述延伸部分包围所述接线端子和接合到所述接线端子的元件之间的接合部分的外周。
4.如权利要求1到3中任一项所述的半导体器件，其特征在于，槽口设置在所述端子块中以使所述槽口支撑导电连接到所述半导体元件的控制电极的引脚端子。
5.如权利要求1到4中任一项所述的半导体器件，其特征在于，屏蔽层选择性地设置在所述端子块上。
CN200810184311.2A 2007-12-04 2008-12-03 半导体器件 Active CN101452925B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310053571.7A CN103151325B (zh) 2007-12-04 2008-12-03 半导体器件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-313488 2007-12-04
JP2007313488A JP5176507B2 (ja) 2007-12-04 2007-12-04 半導体装置
JP2007313488 2007-12-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201310053571.7A Division CN103151325B (zh) 2007-12-04 2008-12-03 半导体器件

Publications (2)

Publication Number Publication Date
CN101452925A true CN101452925A (zh) 2009-06-10
CN101452925B CN101452925B (zh) 2014-02-12

Family

ID=40621455

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201310053571.7A Active CN103151325B (zh) 2007-12-04 2008-12-03 半导体器件
CN200810184311.2A Active CN101452925B (zh) 2007-12-04 2008-12-03 半导体器件

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201310053571.7A Active CN103151325B (zh) 2007-12-04 2008-12-03 半导体器件

Country Status (4)

Country Link
US (1) US8030749B2 (zh)
JP (1) JP5176507B2 (zh)
CN (2) CN103151325B (zh)
DE (1) DE102008060300B4 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468249A (zh) * 2010-11-01 2012-05-23 三星电机株式会社 功率封装模块及制造该功率封装模块的方法
CN104205330A (zh) * 2012-03-01 2014-12-10 三菱电机株式会社 电力用半导体模块以及电力变换装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8009439B2 (en) 2007-11-30 2011-08-30 Raytheon Company Metal foil interconnection of electrical devices
US7763970B2 (en) * 2008-02-27 2010-07-27 Infineon Technologies Ag Power module
CN102576706B (zh) 2010-03-16 2015-07-22 富士电机株式会社 半导体器件
JP5539134B2 (ja) 2010-09-16 2014-07-02 三菱電機株式会社 半導体装置
JP5936310B2 (ja) * 2011-03-17 2016-06-22 三菱電機株式会社 パワー半導体モジュール及びその取り付け構造
JP5764446B2 (ja) * 2011-09-22 2015-08-19 株式会社日立産機システム 電力変換装置
JP6065839B2 (ja) 2011-09-30 2017-01-25 富士電機株式会社 半導体装置及びその製造方法
WO2013118415A1 (ja) * 2012-02-09 2013-08-15 富士電機株式会社 半導体装置
JP5870777B2 (ja) 2012-03-09 2016-03-01 富士電機株式会社 半導体装置およびその製造方法
WO2014054212A1 (ja) * 2012-10-01 2014-04-10 富士電機株式会社 半導体装置とその製造方法
WO2014073311A1 (ja) * 2012-11-09 2014-05-15 富士電機株式会社 半導体装置
JP6004094B2 (ja) * 2013-04-24 2016-10-05 富士電機株式会社 パワー半導体モジュールおよびその製造方法、電力変換器
JP2016518030A (ja) * 2013-04-29 2016-06-20 アーベーベー・テクノロジー・アーゲー パワー半導体装置のモジュール配列
JP6112073B2 (ja) * 2014-06-20 2017-04-12 株式会社豊田自動織機 半導体装置
JP6485257B2 (ja) * 2015-07-01 2019-03-20 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP6075470B2 (ja) * 2016-01-13 2017-02-08 富士電機株式会社 半導体装置およびその製造方法
US10347549B2 (en) * 2016-04-30 2019-07-09 Littelfuse, Inc. Power semiconductor device module having mechanical corner press-fit anchors
US10062621B2 (en) * 2016-04-30 2018-08-28 Ixys, Llc Power semiconductor device module having mechanical corner press-fit anchors
JP6515886B2 (ja) * 2016-07-08 2019-05-22 株式会社豊田自動織機 半導体モジュール
DE102017108114A1 (de) * 2017-04-13 2018-10-18 Infineon Technologies Ag Chipmodul mit räumlich eingeschränktem thermisch leitfähigen Montagekörper
US10438877B1 (en) * 2018-03-13 2019-10-08 Semiconductor Components Industries, Llc Multi-chip packages with stabilized die pads
KR102645198B1 (ko) * 2018-10-24 2024-03-06 현대자동차주식회사 양면 냉각형 파워모듈
DE102020204358A1 (de) * 2020-04-03 2021-10-07 Zf Friedrichshafen Ag Halbbrückenmodul für einen Inverter eines elektrischen Antriebs eines Elektrofahrzeugs oder eines Hybridfahrzeugs und Inverter für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947080A (en) * 1971-06-14 1976-03-30 Underwriters Safety Device Co. Quick-connect-disconnect terminal block assembly
JPH0732230B2 (ja) * 1988-12-29 1995-04-10 富士電機株式会社 半導体装置
JP2850606B2 (ja) 1991-11-25 1999-01-27 富士電機株式会社 トランジスタモジュール
JP2882143B2 (ja) 1991-12-10 1999-04-12 富士電機株式会社 半導体装置の内部配線構造
JP2956363B2 (ja) 1992-07-24 1999-10-04 富士電機株式会社 パワー半導体装置
JPH087956A (ja) * 1994-06-23 1996-01-12 Fuji Electric Co Ltd 半導体装置の端子組立構造
JPH08125115A (ja) 1994-10-21 1996-05-17 Sansha Electric Mfg Co Ltd 電力用半導体モジュール
JPH08204115A (ja) 1995-01-30 1996-08-09 Fuji Electric Co Ltd 半導体装置
US6011302A (en) 1997-05-29 2000-01-04 Fuji Electric Co., Ltd. Semiconductor device with reduced amount of sealing resin
JP3610749B2 (ja) * 1997-12-04 2005-01-19 富士電機デバイステクノロジー株式会社 半導体装置のパッケージおよびその製作方法並びにこれを用いた半導体装置
JP4218193B2 (ja) * 2000-08-24 2009-02-04 三菱電機株式会社 パワーモジュール
US7046518B2 (en) * 2001-04-02 2006-05-16 International Rectifier Corporation Power module
JP4715040B2 (ja) * 2001-06-08 2011-07-06 富士電機システムズ株式会社 半導体装置
DE10232566B4 (de) * 2001-07-23 2015-11-12 Fuji Electric Co., Ltd. Halbleiterbauteil
JP3901038B2 (ja) * 2001-07-23 2007-04-04 富士電機デバイステクノロジー株式会社 半導体装置およびそれを用いたインバータ装置
DE10316355C5 (de) * 2003-04-10 2008-03-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbeitermodul mit flexibler äusserer Anschlussbelegung
JP4244760B2 (ja) 2003-07-29 2009-03-25 富士電機デバイステクノロジー株式会社 半導体装置
JP4301096B2 (ja) 2004-06-29 2009-07-22 富士電機デバイステクノロジー株式会社 半導体装置
JP2006206721A (ja) * 2005-01-27 2006-08-10 Kansai Electric Power Co Inc:The 高耐熱合成高分子化合物及びこれで被覆した高耐電圧半導体装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468249A (zh) * 2010-11-01 2012-05-23 三星电机株式会社 功率封装模块及制造该功率封装模块的方法
CN104205330A (zh) * 2012-03-01 2014-12-10 三菱电机株式会社 电力用半导体模块以及电力变换装置
US9685879B2 (en) 2012-03-01 2017-06-20 Mitsubishi Electric Corporation Power semiconductor module and power conversion device
CN104205330B (zh) * 2012-03-01 2017-07-18 三菱电机株式会社 电力用半导体模块以及电力变换装置
CN107293534A (zh) * 2012-03-01 2017-10-24 三菱电机株式会社 电力用半导体模块以及电力变换装置
US9979314B2 (en) 2012-03-01 2018-05-22 Mitsubishi Electric Corporation Power semiconductor module and power conversion device
CN111048491A (zh) * 2012-03-01 2020-04-21 三菱电机株式会社 电力用半导体模块以及电力变换装置
CN107293534B (zh) * 2012-03-01 2020-06-09 三菱电机株式会社 电力用半导体模块以及电力变换装置
CN111048491B (zh) * 2012-03-01 2023-04-18 三菱电机株式会社 电力用半导体模块以及电力变换装置

Also Published As

Publication number Publication date
CN101452925B (zh) 2014-02-12
CN103151325A (zh) 2013-06-12
US20090140414A1 (en) 2009-06-04
JP2009141000A (ja) 2009-06-25
JP5176507B2 (ja) 2013-04-03
DE102008060300B4 (de) 2020-06-18
US8030749B2 (en) 2011-10-04
CN103151325B (zh) 2015-12-23
DE102008060300A1 (de) 2009-06-10

Similar Documents

Publication Publication Date Title
CN101452925B (zh) 半导体器件
US8441117B2 (en) Semiconductor device
CN102456652B (zh) 功率半导体装置
CN100444371C (zh) 功率半导体封装
US7417198B2 (en) Radiofrequency power semiconductor module with cavity housing, and method for producing it
CN105765716B (zh) 功率半导体模块和复合模块
CN104733423A (zh) 基板、包含该基板的三维空间封装结构及制造基板的方法
CN104620372B (zh) 半导体装置
KR102041645B1 (ko) 전력반도체 모듈
KR20080087161A (ko) 오픈 프레임 패키지를 가지는 하이 파워 모듈
JP5292779B2 (ja) 半導体装置
CN107924913A (zh) 半导体装置及半导体装置的制造方法
CN108933124A (zh) 电子装置
JP6464787B2 (ja) 半導体装置および半導体装置の製造方法
CN110783315A (zh) 具有电磁屏蔽结构的半导体封装及其制造方法
CN206947320U (zh) 一种电子装置封装外壳
CN104617910B (zh) 水晶振子
CN110416200B (zh) 一种功率模块封装结构及制作方法
JP3391372B2 (ja) 絶縁物封止型電子装置及びその製造方法
CN102376594B (zh) 电子封装结构及其封装方法
JP2016184757A (ja) 半導体装置
JP5533983B2 (ja) 半導体装置
CN102412241B (zh) 半导体芯片封装件及其制造方法
CN116798967B (zh) 一种高频大功率封装模组及模组的制作方法
US20230027138A1 (en) Power module

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
ASS Succession or assignment of patent right

Owner name: FUJI MOTOR SYSTEM CO., LTD.

Free format text: FORMER OWNER: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD.

Effective date: 20100527

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20100527

Address after: Tokyo, Japan

Applicant after: Fuji Electric Systems Co., Ltd.

Address before: Tokyo, Japan

Applicant before: Fuji Electronic Device Technol

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: FUJI ELECTRIC CO., LTD.

Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD.

Effective date: 20110921

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20110921

Address after: Kanagawa

Applicant after: Fuji Electric Co., Ltd.

Address before: Tokyo, Japan

Applicant before: Fuji Electric Systems Co., Ltd.

C14 Grant of patent or utility model
GR01 Patent grant