CN101872808A

CN101872808A - Manufacturing method of selective emitter of crystalline silicon solar cell

Info

Publication number: CN101872808A
Application number: CN201010191946A
Authority: CN
Inventors: 丁孔奇
Original assignee: Jiawei Solar (Wuhan) Co Ltd
Current assignee: Jiawei Solar (Wuhan) Co Ltd
Priority date: 2010-06-04
Filing date: 2010-06-04
Publication date: 2010-10-27

Abstract

The invention relates to a manufacturing method of a selective emitter of a crystalline silicon solar cell, which comprises the following steps that: the light receiving surface of the crystalline silicon solar cell is printed with electrode slurry containing a certain amount of phosphorus and then is sintered to form a grid line electrode. A high-low junction is formed in an emitter electrode region, so the contact resistance between an electrode and an emitter is reduced, and the conversion efficiency is enhanced; and the steps of multiple diffusion and mask manufacture in a specific region in the prior art are eliminated, so the work procedure is simplified, and the cost is reduced.

Description

A kind of manufacture method of selective emitter of crystalline silicon solar cell

Technical field

The present invention relates to silicon solar cell, relate in particular to a kind of selective emitter manufacture method that improves the crystal silicon solar batteries photoelectric conversion efficiency.

Background technology

At present, typical selective emitter of crystalline silicon solar cell manufacture method is for diffusion repeatedly and at specific region making mask.Though this process effect better still has the following disadvantages:

1, processing step is various, and equipment is had specific (special) requirements, can't directly realize on existing production line.

2, high-temperature process needs for a long time, increases energy consumption and simultaneously production efficiency is had a negative impact.

3, required mask material needs special chemical treatment, increases cost.

Summary of the invention

The present invention provides a kind of manufacture method of selective emitter of crystalline silicon solar cell for solving the deficiency that prior art exists.

The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of manufacture method of selective emitter of crystalline silicon solar cell is included on the crystal silicon solar batteries sensitive surface printing and contains and carry out sintering behind the electrode slurry of P elements and form gate line electrode.

The invention has the beneficial effects as follows: after printing the electrode slurry that contains certain P elements on the crystal silicon solar batteries sensitive surface, carry out sintering, form the height knot in the emitter electrode district, reduced the contact resistance between electrode and the emitter, promote conversion efficiency, and the step of having cancelled repeatedly diffusion of the prior art and having made mask in the specific region, simplify operation, reduced cost.

On the basis of technique scheme, the present invention can also do following improvement.

Further, described electrode slurry is to be mixed by argent slurry and phosphorus slurry.

Further, argent slurry and phosphorus are starched mass ratio between 1: 1 to 8: 1 in the described electrode slurry.

Further, utilize method for printing screen that described electrode slurry is printed onto on the crystal silicon solar batteries sensitive surface.

Further, described gate electrode line width is between 50um-150um, and the gate electrode line height is between 10um-50um.

Further, the shielded area of described gate electrode line generation is less than 7%.

Description of drawings

Fig. 1 is a solar cell cross sectional representation of the present invention;

Fig. 2 is the inventive method flow chart;

In the accompanying drawing, the list of parts of each label representative is as follows:

1, silver-colored phosphorus metal grid lines positive electrode; 2, silicon nitride antireflective coating; 3, phosphorus-diffused layer; 4, p type single crystal silicon sheet; 5, electrode below heavily doped layer; 6, silver-colored back electrode; 7, aluminum back electric field.

Embodiment

Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.

As shown in Figure 1, present embodiment is an example with 125mm * 125mm standard side battery, solar cell comprises p type single crystal silicon sheet 4, be arranged on aluminum back electric field 7 and silver-colored back electrode 6 under the p type single crystal silicon sheet 4, be arranged on the phosphorus-diffused layer 3 of p type single crystal silicon sheet 4 tops, be provided with silicon nitride antireflective coating 2 above phosphorus-diffused layer 3, and be arranged on the silver-colored phosphorus metal grid lines positive electrode 1 on the silicon nitride antireflective coating 2, there is heavily doped layer 5 silver-colored phosphorus metal grid lines positive electrode 1 below.Wherein, the gate electrode line width is between 50um-150um, and the gate electrode line height is between 10um-50um, and the shielded area that gate electrode line produces when absorbing electronics, has guaranteed daylighting area less than 7%.

Fig. 2 is the inventive method flow chart, is example to make 125mm * 125mm standard side battery, as shown in the figure:

The p type single crystal silicon sheet of resistivity 0.2-15 Ω cm is put into the ultrasonic cleaning machine, add cleaning agent and cleaned 20 minutes,, clean then, dry then with the NaOH of 0.5%-2% or KOH solution adds an amount of isopropyl alcohol and sodium metasilicate carries out suede corrosion.

The p type single crystal silicon sheet of making herbs into wool is put into diffusion furnace carry out single face phosphorous diffusion making N+ layer, diffusion back square resistance R=20-80 Ω/ (Ω/ is ohms per square).

Plasma etching: the conductive layer of in the plasma etching machine, removing silicon chip edge.

The dephosphorization silex glass: the HF acid solution of silicon chip being put into 2%-5% soaked 1-3 minute, removed the silicon chip surface phosphorosilicate glass.

Deposited silicon nitride antireflective coating: use PECVD at silicon chip front cvd nitride silicon thin film, about thickness 80nm.

Use screen process press at silicon chip back up silver slurry and aluminium paste, make back electrode and back of the body electric field.

Use screen process press at the positive printed silver phosphorus slurry of silicon chip, argent slurry and phosphorus slurry mass ratio preferably between 1: 1 to 8: 1, carry out sintering then in the silver-colored phosphorus slurry.

Its series resistance of the battery 0.005-0.008 ohm that adopts this method to make is starkly lower than 0.012 level of common batteries, and battery efficiency promotes about 0.2 percentage point.

In sum, the present invention replaces repeatedly spreading with phosphorous slurry, forms the height knot in the emitter electrode district, has both reduced the contact resistance between electrode and the emitter, promotes conversion efficiency, is easy to again implement on existing standard solar cell product line.

The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims

1. the manufacture method of a selective emitter of crystalline silicon solar cell is included in printing on the crystal silicon solar batteries sensitive surface and contains and carry out sintering behind the electrode slurry of P elements and form gate line electrode.

2. method according to claim 1 is characterized in that, described electrode slurry is to be mixed by argent slurry and phosphorus slurry.

3. method according to claim 2 is characterized in that, argent slurry and phosphorus slurry mass ratio are between 1: 1 to 8: 1 in the described electrode slurry.

4. method according to claim 1 is characterized in that, utilizes method for printing screen that described electrode slurry is printed onto on the crystal silicon solar batteries sensitive surface.

5. method according to claim 4 is characterized in that, described gate electrode line width is between 50um-150um, and the gate electrode line height is between 10um-50um.

6. method according to claim 5 is characterized in that, the shielded area that described gate electrode line produces is less than 7%.