CN102800743B - Back contacts crystal silicon solar cell sheet manufacture method - Google Patents
Back contacts crystal silicon solar cell sheet manufacture method Download PDFInfo
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- CN102800743B CN102800743B CN201110141575.1A CN201110141575A CN102800743B CN 102800743 B CN102800743 B CN 102800743B CN 201110141575 A CN201110141575 A CN 201110141575A CN 102800743 B CN102800743 B CN 102800743B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 75
- 239000010703 silicon Substances 0.000 title claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000002002 slurry Substances 0.000 claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 22
- 235000008216 herbs Nutrition 0.000 claims abstract description 17
- 210000002268 wool Anatomy 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims description 11
- 238000003892 spreading Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 3
- 229920002521 macromolecule Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 12
- 239000012634 fragment Substances 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 4
- 238000009776 industrial production Methods 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application discloses a kind of back contacts crystal silicon solar cell sheet manufacture method, comprise; Perforate, making herbs into wool is carried out at surface of semiconductor chip; After making herbs into wool, semiconductor chip spreads on the surface and on through-hole wall; After the diffusion in semiconductor chip through hole, stop slurry is set; Stop that the carrying out of semiconductor chip etches after slurry to arranging; Remove the stop slurry on the rear semiconductor chip of etching; Doped glass layer after removal being stopped slurry on semiconductor chip is removed; Back contacts crystal silicon solar cell sheet is obtained after semiconductor chip after removing doped glass layer is processed.The method, before etching, by arranging barrier layer in through hole, can be avoided the emitter junction etching in through hole.Compared with prior art, the method can reduce laser isolation operation, reduces cell piece electric leakage risk, and reduces fragment rate.In addition, reduce laser isolation operation, make technique more simple, decrease equipment cost, be conducive to large-scale industrial production.
Description
Technical field
The application relates to technical field of solar batteries, particularly relates to a kind of back contacts crystal silicon solar cell sheet manufacture method.
Background technology
Solar cell, also claims photovoltaic cell, is the semiconductor device that a kind of luminous energy by the sun is converted into electric energy.Because it is Green Product, can not cause environmental pollution, and be renewable resource, so under current energy starved situation, solar cell is a kind of novel energy having broad based growth future.At present, the solar cell of more than 80% is prepared from by crystalline silicon material, therefore, prepare high efficiency crystal-silicon solar cell and have very important meaning for utilizing solar power generation on a large scale, because the sensitive surface of back contacts crystal-silicon solar cell does not have main gate line, positive pole and negative pole are all positioned at the shady face of cell piece, this just greatly reduces the shading rate of sensitive surface grid line, improve the conversion efficiency of cell piece, so back contacts crystal silicon solar energy battery becomes the focus of current solar cell research and development.
At present, the manufacturing process standardization of back contacts crystal silicon solar cell sheet, its key step is as follows:
1. perforate: adopt laser to open at least one conductive hole at silicon chip.
2. making herbs into wool: make the silicon chip surface (comprising front and back) of light originally form scraggly structure to extend the propagation path of light on its surface by chemical reaction, thus improve solar battery sheet to the absorption of light.
3. diffusion: P-type silicon sheet after the diffusion surface and conductive hole inwall become N-type electrode, or N-type silicon chip after the diffusion surface and conductive hole inwall become P-type electrode, formed PN junction, make silicon chip have photovoltaic effect.
4. periphery etching: the side of silicon chip is etched.
5. remove doped glass layer: the doped glass layer formed when being spread by silicon chip surface is removed.
6. plated film: at silicon chip sensitive surface plated surface antireflective coating, mainly contain two class antireflective coatings at present, silicon nitride film and oxidation titanium film, mainly plays antireflective and passivation.
7. prepare electrode and electric field: backplate, front electrode and back surface field are prepared on silicon chip.
8. sinter: make the electrode of preparation, between back surface field and silicon chip, form alloy.
9. laser isolation: formed between silicon chip back side and conductive hole when the object of this step is to remove diffusion by the conductive layer of P-N junction short circuit.
In existing manufacturing process, in diffusion step, can be formed the conductive layer of P-N junction short circuit between solar cell back light face and conductive hole, this greatly reduces the parallel resistance of cell piece, easy appearance electric leakage, so need to be got rid of by the conductive layer between P-N junction by laser isolation step.But adopt laser isolation that solar battery sheet may be made to occur new leakage current path, cause the performance of cell piece to reduce, in addition, the damage of laser to cell piece itself is larger, may occur fragment in laser isolation processes, adds the production cost of cell piece.
Summary of the invention
In view of this, the embodiment of the present application provides a kind of back contacts crystal silicon solar cell sheet manufacture method, before etching, stop slurry is set in the through hole of semiconductor chip, when etching, can avoid etching the emitter junction that through-hole wall diffuses to form when etching, there is emitter junction in the hole of the solar battery sheet obtained like this, and there is no emitter junction at shady face, the emitter junction insulation in conductive hole can be realized.
To achieve these goals, the technical scheme that provides of the embodiment of the present application is as follows:
A kind of back contacts crystal silicon solar cell sheet manufacture method, comprises;
Carry out on the surface of semiconductor chip punching, making herbs into wool;
After making herbs into wool described semiconductor chip surface on and through hole inwall on spread, formed P-N junction;
In the through hole of described semiconductor chip after the diffusion, stop slurry is set; Stop that the carrying out of described semiconductor chip etches after slurry to arranging;
Remove the stop slurry in through hole on the rear described semiconductor chip of etching;
Doped glass layer after removal being stopped slurry on described semiconductor chip is removed;
Back contacts crystal silicon solar cell sheet is obtained after described semiconductor chip after removing doped glass layer is processed.
Preferably, the process of carrying out spreading on the surface of semiconductor chip is:
Spread at the single or double of described semiconductor chip, and the through-hole wall of described semiconductor chip is spread.
Preferably, after spreading at described semiconductor chip, describedly stop that the process that described semiconductor chip etches after slurry is to arranging:
To arranging the side that stops described semiconductor chip after slurry and shady face etches.
Preferably, the material of described stop slurry is macromolecule resin.
Preferably, the process of the stop slurry after removing etching on described semiconductor chip is:
Adopt temperature to be 20 DEG C-90 DEG C, concentration is the stop slurry that the alkali lye of 0.05%-10% rinses on described semiconductor chip.
Preferably, carrying out processing procedure to described semiconductor chip after removal doped glass layer is:
Plated film on the sensitive surface removing described semiconductor chip after doped glass layer;
Prepared by described semiconductor chip electrode after plated film and carry on the back electric field and obtain back contacts crystal silicon solar cell sheet.
From above technical scheme, this back contacts crystal silicon solar cell sheet manufacture method that the embodiment of the present application provides, the method is before etching semiconductor chip, stop slurry is set in the through hole of semiconductor chip, like this when etching, can avoid etching the through-hole wall on semiconductor chip, emitter junction is had in the through hole hole of the solar battery sheet obtained, and shady face does not have emitter junction, so just can realize the emitter junction insulation in conductive hole, namely not exist the conductive layer of P-N junction short circuit at shady face.
Compared with prior art, the method can reduce laser isolation operation, reduces cell piece electric leakage risk, and the fragment rate of cell piece is significantly reduced.In addition, reduce laser isolation operation, make technique more simple, and decrease equipment cost, be conducive to large-scale industrial production.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The flow chart of the back contacts crystal silicon solar cell sheet manufacture method that Fig. 1 provides for the present embodiment one;
The structural representation of silicon chip after the perforate that Fig. 2 provides for the present embodiment one;
The structural representation of silicon chip after the making herbs into wool that Fig. 3 provides for the present embodiment one;
The structural representation of silicon chip after the diffusion that Fig. 4 provides for the present embodiment one;
What Fig. 5 provided for the present embodiment one arranges the structural representation stopping silicon chip after slurry;
The structural representation stopping silicon chip after slurry is removed after the etching that Fig. 6 provides for the present embodiment one;
The structural representation of silicon chip after the plated film that Fig. 7 provides for the present embodiment one;
The structural representation of silicon chip after the electrode that Fig. 8 provides for the present embodiment one and the preparation of back of the body electric field.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
In the manufacturing process of existing back contacts crystal silicon solar cell sheet, carry out after perforate, making herbs into wool in diffusion step, can be formed the conductive layer of P-N junction short circuit between solar cell back light face and conductive hole, this greatly reduces the parallel resistance of cell piece, easy appearance electric leakage, so in order to make P-N junction disconnect, existing technique is after sintering step, also need by laser isolation step, around conductive hole, generate an isolation channel, get rid of with the conductive layer between realizing P-N junction.
By to prior art research, applicant finds: due in sintering step, cell piece may temperature distortion, surface is no longer smooth, this requires higher when laser is isolated to the alignment precision that excuse me with regard to making, otherwise occur departing from and will cause new leakage current path, make cell piece hydraulic performance decline.In addition, use laser to produce damage to the meeting of cell piece, fragment phenomenon may be occurred, make the defect ware rate of cell piece increase, add the production cost of cell piece.
For this reason, the present invention proposes a solution, basic thought is: before etching semiconductor chip, stop slurry being set in the through hole of semiconductor chip, like this when etching, the emitter junction to through-hole wall diffuses to form just can being avoided to etch, make that the through-hole wall of the solar battery sheet obtained has emitter junction, and shady face does not have emitter junction, so just can realize the emitter junction insulation in conductive hole, namely not exist the conductive layer of P-N junction short circuit at shady face.
Below using silicon chip as semiconductor chip, by several embodiment, technical solution of the present invention is described:
Embodiment one:
Please refer to Fig. 1, the flow chart of the back contacts crystal silicon solar cell sheet manufacture method that Fig. 1 provides for the present embodiment one, as shown in Figure 1, the method comprises the following steps:
Step S101: perforate on silicon chip;
Adopt laser on silicon chip, output at least one through hole, it acts in through hole and can arrange the shady face that the electric current of cell piece sensitive surface is guided to cell piece by electrode, the positive pole of cell piece and negative pole so just can be made all to be positioned at the back side of cell piece, to reduce the shading rate of face, front grid line.In the embodiment of the present invention, perforate adopt the wavelength of laser can for 1064nm, 1030nm, 532nm or 355nm.In addition, in other embodiments of the application, the mode of machine drilling or chemical corrosion can also be adopted to carry out perforate.After perforate, the structural representation of silicon chip as shown in Figure 2, and in figure, 1 is silicon chip, and 2 is sensitive surface, and 3 is shady face, and 4 is through hole, and 5 is through-hole wall.
Step S102: carry out making herbs into wool at silicon chip surface, forms surface texture;
When making herbs into wool, can carry out making herbs into wool at silicon chip 1 one side, also can carry out making herbs into wool the two-sided of silicon chip 1, in the embodiment of the present application, as shown in Figure 3, select during making herbs into wool to carry out making herbs into wool on the sensitive surface 2 and shady face 3 of silicon chip 1, in figure, 6 is matte.The object of making herbs into wool makes the silicon chip surface of light originally form scraggly structure to extend the propagation path of light on its surface by chemical reaction, thus improve silicon chip to the absorption of light.In addition, before making herbs into wool, need greasy dirt and the metal impurities of removing silicon chip 1 surface, and remove the cutting damage layer on silicon chip 1 surface.
Step S103: spread on the surface of silicon chip, forms P-N junction;
Foreign atom is diffused on the matte 6 of silicon chip 1, and is diffused on the inwall 5 of through hole 4, as shown in Figure 4, for spreading the structural representation of rear silicon chip.In the embodiment of the present application, only spread on a surface of silicon chip 1, in figure, 7 is emitter junction.P-type silicon sheet 1 after the diffusion surface becomes N-type, or N-type silicon chip 1 becomes P type in surface after the diffusion, and form PN junction, make silicon chip 1 have photovoltaic effect, the concentration spread in addition, the degree of depth and uniformity directly affect the electrical property of solar battery sheet.
Step S104: stop slurry is set in the through hole of silicon chip;
Adopt the mode arranged, fill in through hole 4 and stop slurry, stop that the material of slurry is macromolecule resin.By arranging stop slurry in through hole, just can protect the emitter junction on through hole 4 inwall in follow-up etch step, avoiding emitter junction to be etched.As shown in Figure 5, in figure 8 for stop slurry.
Step S105: the side of silicon chip is etched and removes the stop slurry in through hole;
The side of silicon chip 1 is etched, its objective is when removing diffusion silicon chip 1 side formed by the conductive layer of PN junction two terminal shortcircuit.In addition in the embodiment of the present application, the stop slurry in through hole can also be removed while etching.As shown in Figure 6, for etching structural representation that is rear and silicon chip after removing stop slurry, and when removing stop slurry, employing temperature is 20 DEG C-90 DEG C, and concentration is the stop slurry that the alkali lye of 0.05%-10% rinses on semiconductor chip.
Step S106: remove the doped glass layer on silicon chip;
The doped glass layer that silicon chip 1 can be formed when spreading by this step is removed.
Step S107: carry out plated film on the sensitive surface of silicon chip;
Carry out plated film at the sensitive surface of silicon chip 1, the effect of this film is the reflection reducing sunlight, maximally utilises solar energy.In embodiments of the present invention, PECVD (PlasmaEnhancedChemicalVaporDeposition, plasma enhanced chemical vapor deposition method) is adopted to form antireflective coating on silicon chip 1.As shown in Figure 7,9 be antireflective coating in figure.In addition, adopt PECVD to be one embodiment of the present of invention, should not be construed as limiting the invention, in other embodiments of the present invention, film plating process can also adopt additive method well-known to those skilled in the art.
Step S108: electrode and back of the body electric field prepared by the silicon chip after plated film;
In embodiments of the present invention, prepare electrode and carry on the back electric field and comprise: print electrode on silicon chip 1 and carry on the back electric field; Sintering.
Wherein, silk screen printing can be adopted shady face electrode, sensitive surface electrode and shady face electric field to be printed on silicon chip 1.Fig. 8 is the structural representation of silicon chip after preparing electrode and back of the body electric field, and in figure, 11 be hole backplate, and 11 be back electrode, and 12 is that to carry on the back electric field, 13 be sensitive surface electrode, and 14 is pore electrod.Wherein, sensitive surface electrode 13, pore electrod 14, hole backplate 10 can separately generate, and three kinds of electrodes can adopt same material, also can adopt different materials.In other embodiments of the invention, by the method such as vacuum evaporation, sputtering, electrode and back of the body electric field can also be attached on silicon chip 1.Make to form ohmic contact between electrode and silicon chip by sintering.
From above technical scheme, this back contacts crystal silicon solar cell sheet manufacture method that the embodiment of the present application provides, the method is before etching semiconductor chip, in the through hole of semiconductor chip, barrier layer is set, like this when etching, can only etch the shady face of semiconductor chip, and not to etching in through hole, emitter junction is had in the hole of the solar battery sheet obtained, and shady face does not have emitter junction, so just can realize the emitter junction insulation in conductive hole, namely not exist the conductive layer of P-N junction short circuit at shady face.Compared with prior art, the method can reduce laser isolation operation, reduces cell piece electric leakage risk, and the fragment rate of cell piece is significantly reduced.In addition, reduce laser isolation operation, make technique more simple, and decrease equipment cost, be conducive to large-scale industrial production.
The above is only the preferred implementation of the application, those skilled in the art is understood or realizes the application.To be apparent to one skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein when not departing from the spirit or scope of the application, can realize in other embodiments.Therefore, the application can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. a back contacts crystal silicon solar cell sheet manufacture method, is characterized in that, comprising:
Carry out on the surface of semiconductor chip punching, making herbs into wool;
After making herbs into wool described semiconductor chip surface on and through hole inwall on spread, formed P-N junction;
In the through hole of described semiconductor chip after the diffusion, stop slurry is set; Stop that described semiconductor chip etches after slurry, have emitter junction, and shady face does not have emitter junction in the through hole hole of the solar battery sheet obtained to arranging;
Remove the stop slurry in through hole on the rear described semiconductor chip of etching, adopt temperature to be 20 DEG C-90 DEG C, concentration is the stop slurry that the alkali lye of 0.05%-10% rinses on described semiconductor chip;
Doped glass layer after removal being stopped slurry on described semiconductor chip is removed;
Back contacts crystal silicon solar cell sheet is obtained after described semiconductor chip after removing doped glass layer is processed.
2. method according to claim 1, is characterized in that, the process of carrying out spreading on the surface of semiconductor chip is:
Spread at the single or double of described semiconductor chip, and the through-hole wall of described semiconductor chip is spread.
3. method according to claim 2, is characterized in that, after spreading at described semiconductor chip, describedly stops that the process that described semiconductor chip etches after slurry is to arranging:
To arranging the side that stops described semiconductor chip after slurry and shady face etches.
4. method according to claim 1, is characterized in that, the material of described stop slurry is macromolecule resin.
5. the method according to any one of claim 1-4, is characterized in that, carries out processing procedure to be to described semiconductor chip after removal doped glass layer:
Plated film on the sensitive surface removing described semiconductor chip after doped glass layer;
Prepared by described semiconductor chip electrode after plated film and carry on the back electric field and obtain back contacts crystal silicon solar cell sheet.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110141575.1A CN102800743B (en) | 2011-05-27 | 2011-05-27 | Back contacts crystal silicon solar cell sheet manufacture method |
| PCT/CN2011/075417 WO2012162902A1 (en) | 2011-05-27 | 2011-06-07 | Fabrication method for back-contacted crystalline silicon solar cell |
| US13/193,458 US8916410B2 (en) | 2011-05-27 | 2011-07-28 | Methods of manufacturing light to current converter devices |
| US13/193,470 US9153713B2 (en) | 2011-04-02 | 2011-07-28 | Solar cell modules and methods of manufacturing the same |
| US13/193,433 US9281435B2 (en) | 2011-05-27 | 2011-07-28 | Light to current converter devices and methods of manufacturing the same |
| US14/517,697 US9209342B2 (en) | 2011-05-27 | 2014-10-17 | Methods of manufacturing light to current converter devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110141575.1A CN102800743B (en) | 2011-05-27 | 2011-05-27 | Back contacts crystal silicon solar cell sheet manufacture method |
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| CN102800743A CN102800743A (en) | 2012-11-28 |
| CN102800743B true CN102800743B (en) | 2015-12-02 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
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| JPS5839071A (en) * | 1981-08-31 | 1983-03-07 | Japan Solar Energ Kk | Solar battery element |
| CN101728456A (en) * | 2008-10-23 | 2010-06-09 | 李涛勇 | Method for manufacturing silicon sinter internal connection structure of silicon solar cell |
| DE102009005168A1 (en) * | 2009-01-14 | 2010-07-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solar cell and method for producing a solar cell from a silicon substrate |
| KR101573934B1 (en) * | 2009-03-02 | 2015-12-11 | 엘지전자 주식회사 | Solar cell and manufacturing mehtod of the same |
| KR101032624B1 (en) * | 2009-06-22 | 2011-05-06 | 엘지전자 주식회사 | Solar cell and mehtod for manufacturing the same |
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- 2011-05-27 CN CN201110141575.1A patent/CN102800743B/en active Active
- 2011-06-07 WO PCT/CN2011/075417 patent/WO2012162902A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
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| CN102800743A (en) | 2012-11-28 |
| WO2012162902A1 (en) | 2012-12-06 |
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