CN104362189B - A kind of passivating back solaode and preparation method thereof - Google Patents
A kind of passivating back solaode and preparation method thereof Download PDFInfo
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- CN104362189B CN104362189B CN201410595792.1A CN201410595792A CN104362189B CN 104362189 B CN104362189 B CN 104362189B CN 201410595792 A CN201410595792 A CN 201410595792A CN 104362189 B CN104362189 B CN 104362189B
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- passivation layer
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- backside passivation
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 156
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 155
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 132
- 239000010703 silicon Substances 0.000 claims abstract description 132
- 238000002161 passivation Methods 0.000 claims abstract description 66
- 239000004411 aluminium Substances 0.000 claims abstract description 50
- 238000005260 corrosion Methods 0.000 claims abstract description 42
- 230000007797 corrosion Effects 0.000 claims abstract description 42
- 230000005684 electric field Effects 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 129
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 43
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 19
- 238000007639 printing Methods 0.000 claims description 18
- 239000002002 slurry Substances 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- 239000011267 electrode slurry Substances 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 238000007650 screen-printing Methods 0.000 claims description 15
- 229910004205 SiNX Inorganic materials 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 11
- 229910052906 cristobalite Inorganic materials 0.000 claims description 11
- 238000007641 inkjet printing Methods 0.000 claims description 11
- 229910052682 stishovite Inorganic materials 0.000 claims description 11
- 229910052905 tridymite Inorganic materials 0.000 claims description 11
- 229910052593 corundum Inorganic materials 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 230000009466 transformation Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009969 flowable effect Effects 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a kind of passivating back solaode, including backplate, full aluminum back electric field, backside passivation layer, local aluminum back surface field, P-type silicon, N-type emitter stage, passivating film and front electrode；Described backplate, full aluminum back electric field, backside passivation layer, P-type silicon, N-type emitter stage, passivating film and front electrode are sequentially connected from bottom to up, described local aluminum back surface field is formed after aluminium paste corrosion described backside passivation layer sintering by corroding, and is connected with described full aluminum back electric field and described P-type silicon respectively；Described local aluminum back surface field is one group of vertical bar arranged in parallel, is evenly distributed in backside passivation layer.The invention also discloses a kind of preparation method of passivating back solaode.Using the present invention, cell photoelectric conversion efficiency can be improved, the controllability of operation is strong, equipment investment low cost, process is simple, and production efficiency is high, good with current production line compatibility.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, to a kind of passivating back solaode；Correspondingly, originally
Invention further relates to a kind of preparation technology of passivating back solaode.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, convert optical energy into electricity using photovoltaic effect
The device of energy, when solar irradiation is in quasiconductor P-N junction, forms new hole-electron pair, in the presence of P-N junction electric field, empty
Cave flows to P area by N area, and electronics flows to N area by P area, is formed for electric current after connecting circuit.
Conventional crystalline silicon solaode substantially only with front passivating technique, is sunk with the mode of PECVD in front side of silicon wafer
Long-pending one layer of silicon nitride, reduces the recombination rate in front surface for few son, can significantly lift the open-circuit voltage of crystal silicon battery and short
Road electric current, thus lift the photoelectric transformation efficiency of crystal silicon solar battery.
With the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, people begin one's study back of the body passivating solar battery
Technology.The way of main flow is to deposit aluminium sesquioxide or silicon dioxide in silicon chip back side at present, then redeposited one layer of nitridation
Silicon, more overleaf lbg, remove the backside passivation layer in fraction region.Then overleaf print aluminium paste, dry sintering.Aluminum
Slurry, by the above region and silicon directly contact, electric current is derived.But overleaf lbg on passivation layer, easily carry
Carry out the problem of silicon back surface damage.
For this reason, those skilled in the art begin with a kind of new method back side fluting, such as Chinese patent
A kind of aluminium paste disclosed in CN103996743A burns the preparation method of the back of the body annealing point contact solar cell of partial thin film, battery
Back point contact realizes thin film perforate, the contact of aluminum silicon and contact position formation local aluminum back surface field using the aluminium paste of burn-through type simultaneously, will
Perforate, aluminium paste contacted two steps and is condensed to a step with silicon, it is to avoid laser beam drilling brings the problem that silicon back surface damages.But by
In employing point way of contact arrangement as shown in figure 1, aluminium paste is higher with the contact resistance of silicon it is therefore desirable to Ohmic contact ability is fine
Corrosion aluminium paste slurry, otherwise cannot mate with backside passivation layer, production cost is higher.In addition, because aluminium paste is liquid, in table
The passivating back layer surface that acts on of face tension force forms pearl drop, but due to having mobility, easily diffusion is thus increase liquid
Drip contact area with backside passivation layer, perforate becomes big, compared with straight line fluting it is difficult to described in precise control local aluminum back surface field accounts for
The percent of backside passivation layer area, causes the reduction of open-circuit voltage and short circuit current.And because drop diffusion makes drop connect
Aluminium paste in the unit area of contacting surface tails off, and aluminium paste deficiency easily and leads to not burn backside passivation layer, makes local aluminum back surface field
Good Ohmic contact can not be formed with P-type silicon.
Content of the invention
The technical problem to be solved is, provides a kind of back side that cell photoelectric conversion efficiency can be greatly improved
Passivation solaode.
The technical problem to be solved also resides in, and provides a kind of preparation method of passivating back solaode,
Cell photoelectric conversion efficiency can be greatly improved, equipment investment low cost, process is simple, and good with current production line compatibility.
In order to solve above-mentioned technical problem, the invention provides a kind of passivating back solaode, including backplate,
Full aluminum back electric field, backside passivation layer, local aluminum back surface field, P-type silicon, N-type emitter stage, passivating film and front electrode；Described back side electricity
Pole, full aluminum back electric field, backside passivation layer, P-type silicon, N-type emitter stage, passivating film and front electrode are sequentially connected from bottom to up, institute
State local aluminum back surface field and formed after aluminium paste corrosion described backside passivation layer sintering by corroding, respectively with described full aluminum back electric field and described
P-type silicon connects；
Described local aluminum back surface field is one group of vertical bar group arranged in parallel, is evenly distributed in backside passivation layer.
As the improvement of such scheme, described local aluminum back surface field area accounts for the 1%-10% of described backside passivation layer area.
As the improvement of such scheme, the vertical bar width of described local aluminum back surface field is 20-30 μm, and bar number is 80-150 bar.
As the improvement of such scheme, described local aluminum back surface field passes through silk screen printing or ink-jetting style in described passivating back
Formed after printing corrosion aluminium paste sintering on layer.
As the improvement of such scheme, described backside passivation layer is Al2O3/SiNxComposite bed or SiO2/SiNxComposite bed.
Correspondingly, present invention also offers a kind of preparation method of passivating back solaode, comprise the following steps：
（1）Form matte in front side of silicon wafer, described silicon chip is P-type silicon；
（2）It is diffused in described front side of silicon wafer, form N-type emitter stage；
（3）Remove the phosphorosilicate glass that diffusion process is formed；
（4）Deposit aluminium sesquioxide or silicon dioxide in silicon chip back side；
（5）Deposited silicon nitride on aluminium sesquioxide layer or silicon dioxide layer, forms backside passivation layer；
（6）Form the antireflecting passivating film of silicon nitride in described front side of silicon wafer；
（7）Print back electrode slurry in described silicon chip back side, dry；
（8）Adopt silk screen printing or ink-jetting style printing corrosion aluminium paste in described silicon chip back side, dry；
（9）Print full aluminum back electric field slurry in described silicon chip back side, cover corrosion aluminium paste, form full aluminum back electric field, dry
Dry；
（10）In described front side of silicon wafer print positive electrode slurry；
（11）Silicon chip is carried out high temperature sintering, in sintering process, corrosion aluminium paste corrosion backside passivation layer, forms and connect full aluminum
Back of the body electric field and the local aluminum back surface field of P-type silicon；
Described step（8）Middle employing vertical bar parallel arrangement mode printing corrosion aluminium paste.
Scheme as above-mentioned preparation method is improved, and described local aluminum back surface field area accounts for described backside passivation layer area
1%-10%.
Scheme as above-mentioned preparation method is improved, and the vertical bar width of described local aluminum back surface field is 20-30 μm, and bar number is
80-150 bar.
Scheme as above-mentioned preparation method is improved, and described backside passivation layer is Al2O3/SiNxComposite bed or SiO2/
SiNxComposite bed；
Scheme as above-mentioned preparation method is improved, Al in described backside passivation layer2O3Or SiO2Deposit thickness is 5-
50nm, SiNxDeposit thickness is 50-200nm.
Implement the embodiment of the present invention, have the advantages that：
The present invention is evenly distributed on backside passivation layer using one group of vertical bar local aluminum back surface field arranged in parallel, makes full aluminum back of the body electricity
Field can form good Ohmic contact with silicon, it is to avoid conventional laser fluting damages silicon chip back surface, thus significantly improving
The photoelectric transformation efficiency of battery.
The present invention adopts vertical bar parallel arrangement mode printing corrosion aluminium paste, because aluminium paste is flowable on every straight line
, be not in that point-like prints not flowable situation, be therefore difficult to spread, the controllability of operation is strong, it is to avoid prior art is adopted
When being printed with dot matrix, aluminium paste and the contact area of backside passivation layer are difficult to control to, situations such as production cost is high.
Full aluminum back electric field and P-type silicon are connected by the present invention without laser equipment, the mode by printing corrosion aluminium paste.Screen printing
Brush equipment is the currently used mature technology of producing line, that is, the present invention can quickly introduce large-scale industrial production, equipment investment
Low cost, process is simple, production efficiency is high, good with current production line compatibility.
Brief description
Fig. 1 is the arranged distribution figure of existing local aluminum back surface field；
Fig. 2 is a kind of structural representation of present invention passivating back solaode；
Fig. 3 is a kind of arranged distribution figure of the local aluminum back surface field of present invention passivating back solaode；
Fig. 4 is a kind of flow chart of the preparation method of present invention passivating back solaode.
Specific embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, the present invention is made into one
Step ground describes in detail.
As shown in Fig. 2 a kind of embodiment of the present invention passivating back solaode, including backplate 1, full aluminum back electric field
2nd, backside passivation layer 3, local aluminum back surface field 4, P-type silicon 5, N-type emitter stage 6, passivating film 7 and front electrode 8；Described backplate 1,
Full aluminum back electric field 2, backside passivation layer 3, P-type silicon 5, N-type emitter stage 6, passivating film 7 and front electrode 8 are sequentially connected from bottom to up,
Described local aluminum back surface field 4 is corroded after described backside passivation layer 3 sinters by corrosion aluminium paste and is formed, respectively with described full aluminum back electric field 2
Connect with described P-type silicon 5；
Described local aluminum back surface field 4 is one group of vertical bar group arranged in parallel, is evenly distributed in backside passivation layer 3.
It should be noted that P-type silicon 5 described in the embodiment of the present invention is the method by P-type silicon raw material crystal growth, formed
After crystal bar, it is sliced into the size of 156mm x 156mm, but be not limited to this size.
The local aluminum back surface field 4 of the embodiment of the present invention passes through silk screen printing or ink-jetting style prints in described backside passivation layer 3
Formed after brush corrosion aluminium paste sintering.Described local aluminum back surface field 4 is embedded in described backside passivation layer 3, and two ends connect P-type silicon
5 with full aluminum back electric field 2 so that full aluminum back electric field 2 and silicon can form good Ohmic contact.Backside passivation layer 3 reduces
The few sub- recombination rate of back surface, improves open-circuit voltage and the short circuit current of battery, and local aluminum back surface field 4 is by electric current in battery
Portion derives, thus significantly improving the photoelectric transformation efficiency of battery.Print using after first lbg with respect to prior art
The mode of brush aluminium paste, the present embodiment becomes a step printing corrosion aluminium paste from original two step molding local aluminum back surface fields 4, excellent
Metallization processes flow process, improve production efficiency, and also silk screen printing or ink-jet technology are all the equipment of maturation, and compatible with current production line
Property is good.
As shown in figure 3, the local aluminum back surface field 4 of the embodiment of the present invention is one group of vertical bar group arranged in parallel, it is evenly distributed on
In backside passivation layer 3, wherein, local aluminum back surface field 4 vertical bar width is 20-30 μm, and bar number is 80-150 bar.Preferably, local aluminum
Back surface field 4 vertical bar width is 25-30 μm, and bar number is 100-120 bar.
The photoelectric transformation efficiency of impact solaode includes three factors：Open-circuit voltage（Voc）, short circuit current（Isc）
And fill factor, curve factor（FF）.Backside passivation layer 3 described in the present embodiment is Al2O3/SiNxComposite bed or SiO2/SiNxComposite bed,
This backside passivation layer 3 can effectively improve open-circuit voltage and the short circuit current of battery, and silicon chip is contacted with the good ohmic of aluminum back surface field
The fill factor, curve factor of battery can be lifted.When local aluminum back surface field 4 accounting is more than 10%, i.e. the contact area of local aluminum back surface field 4 and P-type silicon 5
Larger, the area of backside passivation layer 3 certainly will be led to less, lifted battery fill factor, curve factor while reduce open-circuit voltage and
Short circuit current, actually photoelectric transformation efficiency are not improved, on the contrary, when local aluminum back surface field 4 accounting is less than 1%, then leading to office
Portion's aluminum back surface field 4 is not enough with the contact area of P-type silicon 5 although ensure that enough backside passivation layer 3 area coverages, but leads to fill out
Fill the factor to reduce, the photoelectric transformation efficiency of battery is also undesirable.Thus, local aluminum back surface field 4 is direct with the accounting of backside passivation layer 3
Have impact on photoelectric transformation efficiency.The inventors discovered that, when described local aluminum back surface field 4 area accounts for described backside passivation layer 3 area
1%-10%, the photoelectric transformation efficiency of battery at least can improve 0.3%.Preferably, when local aluminum back surface field 4 vertical bar width is 20-30 μ
M, when bar number is 80-150 bar, its described local aluminum back surface field 4 area accounts for the 1%-3% of described backside passivation layer 3 area.
In order to further demonstrate that the local aluminum back surface field 4 of the embodiment of the present invention vertical bar distribution mode shadow to each performance of battery
Ring, measure the battery performance of each experimental subject by following experiment.
Experimental subject：Reference example 1 is the conventional solar cells not having local aluminum back surface field；
Reference example 2 adopts lbg and screen printing mode to prepare the solaode of local aluminum back surface field；
The lattice array mode that reference example 3 is carried using prior art prints the sun that corrosion aluminium paste to prepare local aluminum back surface field
Can battery；
Embodiment prints, using vertical bar parallel arrangement mode, the solaode that corrosion aluminium paste to prepare local aluminum back surface field, removes
The step of preparation local aluminum back surface field is different outer, and the manufacture method of remaining each layer is all identical.
Experimental result is as follows：
As shown in figure 4, the present invention provides a kind of preparation method of passivating back solaode, comprise the following steps：
S100 forms matte in front side of silicon wafer, and described silicon chip is P-type silicon.
From wet method or dry etching technology, form matte in p-type silicon chip surface, reflectance controls in 1%-30%.
S101 is diffused in described front side of silicon wafer, forms N-type emitter stage.
N-type emitter stage can be formed by methods such as thermal diffusion or ion implantings, and wherein, the diffusion of described silicon chip is preferably adopted
With phosphorus oxychloride, square resistance need to be controlled in 75-100 ohm/sq scope in diffusion.
S102 removes the phosphorosilicate glass that diffusion process is formed.
The phosphorus silicon being formed during removing described N-type emitter stage front and described P-type silicon piece back side diffusion using HF solution
Glassy layer.
S103 deposits aluminium sesquioxide or silicon dioxide in silicon chip back side.
S104 deposited silicon nitride on aluminium sesquioxide layer or silicon dioxide layer, forms backside passivation layer.
It should be noted that S103 and S104 step is all to be deposited using PVECD equipment in the embodiment of the present invention, first
Forming thickness by S103 step in silicon chip back side is 5-50nmAl2O3Layer or SiO2Layer.Pass through S104 step again in Al2O3Layer
Or SiO2On layer, deposition a layer thickness is the SiN of 50-200nmx, ultimately form Al2O3/SiNxComposite bed or SiO2/SiNxMultiple
Close layer.
It should be noted that PECVD (Plasma Enhanced Chemical Vapor Deposition) refers to
Plasma enhanced chemical vapor deposition.PECVD is made by microwave or radio frequency etc. and makes the gas ionization containing thin film composed atom,
Being partially formed plasma, and plasma chemistry activity very strong it is easy to react, go out desired in deposition on substrate
Thin film.
S105 forms the antireflecting passivating film of silicon nitride in described front side of silicon wafer.
S106 prints back electrode slurry in described silicon chip back side, dries.
Described back electrode slurry is preferably slurry containing Ag.
S107 adopts silk screen printing or ink-jetting style printing corrosion aluminium paste in described silicon chip back side, dries.
It should be noted that adopting vertical bar parallel arrangement mode printing corrosion aluminium paste in S107 step.Corrosion aluminium paste is burning
Backside passivation layer can be corroded during knot, and this aluminium paste filling vertical bar groove, form the local connecting full aluminum back electric field and P-type silicon
Aluminum back surface field.
, due to the mode of printing using lattice array, the diameter of point is little for prior art, the requirement very Gao Caike to corrosion aluminium paste
Mate with backside passivation layer, production cost is high.And the aluminium paste drop being printed in backside passivation layer easily spreads, aluminium paste and the back side
The contact area of passivation layer is difficult to control to, the accounting leading to not to guarantee local aluminum back surface field and cannot accurately improve opto-electronic conversion effect
Rate.
The embodiment of the present invention adopts vertical bar parallel arrangement mode printing corrosion aluminium paste, because aluminium paste is can on every straight line
Flowing, be not in that point-like prints not flowable situation, be therefore difficult to spread, the controllability of operation is strong.Local aluminum back surface field
Area accounts for the 1%-10% of described backside passivation layer area, and preferably local aluminum back surface field vertical bar width is 20-30 μm, and bar number is 80-150
Bar, can make the photoelectric transformation efficiency of battery at least can improve 0.3%.And the corrosion aluminium paste using general performance just can be with the back side
Aluminum back surface field is well matched with, and cost of material reduces.Full aluminum is carried on the back by the present invention without laser equipment, the mode by printing corrosion aluminium paste
Electric field and P-type silicon connect.Screen printing apparatus are the currently used mature technologies of producing line, that is, the present invention can quickly introduce big rule
Mould industrialized production.
Preferably, local aluminum back surface field vertical bar width is 25-30 μm, and bar number is 100-120 bar.
S108 prints full aluminum back electric field slurry in described silicon chip back side, covers corrosion aluminium paste, forms full aluminum back electric field, dries
Dry.
S109 is in described front side of silicon wafer print positive electrode slurry.
Described anelectrode slurry is preferably slurry containing Ag.
Silicon chip is carried out high temperature sintering by S110, and in sintering process, corrosion aluminium paste corrosion backside passivation layer, forms and connect full aluminum
Back of the body electric field and the local aluminum back surface field of P-type silicon.
It should be noted that being 3～15 in oxygen and nitrogen volume ratio：Burnt in the atmosphere of 80,750 ~ 850 DEG C of temperature
Knot, obtains described polished backside crystal silicon solar batteries.
Below the present invention is expanded on further with specific embodiment：
Embodiment 1
（1）From 156mmP type silicon as matrix material, form matte in front side of silicon wafer, described silicon chip is P-type silicon, reflection
Rate controls 10%；
（2）It is diffused in described front side of silicon wafer, forms N-type emitter stage, square resistance need to be controlled 75 in diffusion
Ohm/sq scope；
（3）Remove the phosphorosilicate glass that diffusion process is formed；
（4）Deposit aluminium sesquioxide in silicon chip back side, thickness is 35nm；
（5）On aluminium sesquioxide layer, deposit thickness is the silicon nitride of 120nm, forms compound backside passivation layer；
（6）Form the antireflecting passivating film of silicon nitride in described front side of silicon wafer；
（7）Print back electrode slurry in described silicon chip back side, dry；
（8）Silk screen printing or ink-jetting style is adopted to adopt vertical bar parallel arrangement mode printing corrosion aluminum in described silicon chip back side
Slurry, dries, and the vertical bar width of described local aluminum back surface field is 20 μm, and bar number is 100；
（9）Print full aluminum back electric field slurry in described silicon chip back side, cover corrosion aluminium paste, form full aluminum back electric field, dry
Dry；
（10）In described front side of silicon wafer print positive electrode slurry；
（11）It is 5 in oxygen and nitrogen volume ratio：It is sintered in the atmosphere of 80,750 DEG C of temperature, obtain the described back side blunt
Change solaode.
Embodiment 2
（1）From 156mmP type silicon as matrix material, form matte in front side of silicon wafer, described silicon chip is P-type silicon, reflection
Rate controls 15%；
（2）It is diffused in described front side of silicon wafer, forms N-type emitter stage, square resistance need to be controlled 85 in diffusion
Ohm/sq scope；
（3）Remove the phosphorosilicate glass that diffusion process is formed；
（4）Deposit silicon dioxide in silicon chip back side, thickness is 40nm；
（5）In silicon dioxide layer, deposit thickness is the silicon nitride of 130nm, forms compound backside passivation layer；
（6）Form the antireflecting passivating film of silicon nitride in described front side of silicon wafer；
（7）Print back electrode slurry in described silicon chip back side, dry；
（8）Silk screen printing or ink-jetting style is adopted to adopt vertical bar parallel arrangement mode printing corrosion aluminum in described silicon chip back side
Slurry, dries, and the vertical bar width of described local aluminum back surface field is 25 μm, and bar number is 120；
（9）Print full aluminum back electric field slurry in described silicon chip back side, cover corrosion aluminium paste, form full aluminum back electric field, dry
Dry；
（10）In described front side of silicon wafer print positive electrode slurry；
（11）It is 7 in oxygen and nitrogen volume ratio：It is sintered in the atmosphere of 80,780 DEG C of temperature, obtain the described back side blunt
Change solaode.
Embodiment 3
（1）From 156mmP type silicon as matrix material, form matte in front side of silicon wafer, described silicon chip is P-type silicon, reflection
Rate controls 20%；
（2）It is diffused in described front side of silicon wafer, forms N-type emitter stage, square resistance need to be controlled to exist in diffusion
95ohm/sq scope；
（3）Remove the phosphorosilicate glass that diffusion process is formed；
（4）Deposit silicon dioxide in silicon chip back side, thickness is 50nm；
（5）In silicon dioxide layer, deposit thickness is the silicon nitride of 180nm, forms compound backside passivation layer；
（6）Form the antireflecting passivating film of silicon nitride in described front side of silicon wafer；
（7）Print back electrode slurry in described silicon chip back side, dry；
（8）Silk screen printing or ink-jetting style is adopted to adopt vertical bar parallel arrangement mode printing corrosion aluminum in described silicon chip back side
Slurry, dries, and the vertical bar width of described local aluminum back surface field is 30 μm, and bar number is 130；
（9）Print full aluminum back electric field slurry in described silicon chip back side, cover corrosion aluminium paste, form full aluminum back electric field, dry
Dry；
（10）In described front side of silicon wafer print positive electrode slurry；
（11）It is 1 in oxygen and nitrogen volume ratio：It is sintered in the atmosphere of 10,800 DEG C of temperature, obtain the described back side blunt
Change solaode.
Embodiment 4
（1）From 156mmP type silicon as matrix material, form matte in front side of silicon wafer, described silicon chip is P-type silicon, reflection
Rate controls 25%；
（2）It is diffused in described front side of silicon wafer, forms N-type emitter stage, square resistance need to be controlled 100 in diffusion
Ohm/sq scope；
（3）Remove the phosphorosilicate glass that diffusion process is formed；
（4）Deposit aluminium sesquioxide in silicon chip back side, thickness is 20nm；
（5）On aluminium sesquioxide layer, deposit thickness is the silicon nitride of 100nm, forms compound backside passivation layer；
（6）Form the antireflecting passivating film of silicon nitride in described front side of silicon wafer；
（7）Print back electrode slurry in described silicon chip back side, dry；
（8）Silk screen printing or ink-jetting style is adopted to adopt vertical bar parallel arrangement mode printing corrosion aluminum in described silicon chip back side
Slurry, dries, and described local aluminum back surface field area accounts for the 7% of described backside passivation layer area；
（9）Print full aluminum back electric field slurry in described silicon chip back side, cover corrosion aluminium paste, form full aluminum back electric field, dry
Dry；
（10）In described front side of silicon wafer print positive electrode slurry；
（11）It is 9 in oxygen and nitrogen volume ratio：It is sintered in the atmosphere of 80,820 DEG C of temperature, obtain the described back side blunt
Change solaode.
Embodiment 5
（1）From 156mmP type silicon as matrix material, form matte in front side of silicon wafer, described silicon chip is P-type silicon, reflection
Rate controls 30%；
（2）It is diffused in described front side of silicon wafer, forms N-type emitter stage, square resistance need to be controlled 80 in diffusion
Ohm/sq scope；
（3）Remove the phosphorosilicate glass that diffusion process is formed；
（4）Deposit silicon dioxide in silicon chip back side, thickness is 15nm；
（5）In silicon dioxide layer, deposit thickness is the silicon nitride of 145nm, forms compound backside passivation layer；
（6）Form the antireflecting passivating film of silicon nitride in described front side of silicon wafer；
（7）Print back electrode slurry in described silicon chip back side, dry；
（8）Silk screen printing or ink-jetting style is adopted to adopt vertical bar parallel arrangement mode printing corrosion aluminum in described silicon chip back side
Slurry, dries, and described local aluminum back surface field area accounts for the 9% of described backside passivation layer area；
（9）Print full aluminum back electric field slurry in described silicon chip back side, cover corrosion aluminium paste, form full aluminum back electric field, dry
Dry；
（10）In described front side of silicon wafer print positive electrode slurry；
（11）It is 13 in oxygen and nitrogen volume ratio：It is sintered in the atmosphere of 80,850 DEG C of temperature, obtain the described back side
Passivation solaode.
Last should be noted that above example is only in order to illustrate technical scheme rather than to present invention guarantor
The restriction of shield scope, although being explained in detail to the present invention with reference to preferred embodiment, those of ordinary skill in the art should
Understand, technical scheme can be modified or equivalent, without deviating from the essence of technical solution of the present invention
And scope.
Claims (10)
1. a kind of passivating back solaode is it is characterised in that include backplate, full aluminum back electric field, backside passivation layer, office
Portion's aluminum back surface field, P-type silicon, N-type emitter stage, passivating film and front electrode；Described backplate, full aluminum back electric field, backside passivation layer,
P-type silicon, N-type emitter stage, passivating film and front electrode are sequentially connected from bottom to up, and described local aluminum back surface field is corroded by corroding aluminium paste
Formed after described backside passivation layer sintering, be connected with described full aluminum back electric field and described P-type silicon respectively；
Described local aluminum back surface field is one group of vertical bar group arranged in parallel, is evenly distributed in backside passivation layer.
2. passivating back solaode as claimed in claim 1 is it is characterised in that described local aluminum back surface field area accounts for the described back of the body
The 1%-10% of face passivation layer area.
3. passivating back solaode as claimed in claim 2 is it is characterised in that the vertical bar width of described local aluminum back surface field is
20-30 μm, bar number is 80-150 bar.
4. passivating back solaode as claimed in claim 1 is it is characterised in that described local aluminum back surface field passes through silk screen printing
Or ink-jetting style prints formation after corrosion aluminium paste sintering in described backside passivation layer.
5. passivating back solaode as claimed in claim 1 is it is characterised in that described backside passivation layer is Al2O3/SiNx
Composite bed or SiO2/SiNxComposite bed.
6. the preparation method of passivating back solaode as claimed in claim 1 is it is characterised in that comprise the following steps：
（1）Form matte in front side of silicon wafer, described silicon chip is P-type silicon；
（2）It is diffused in described front side of silicon wafer, form N-type emitter stage；
（3）Remove the phosphorosilicate glass that diffusion process is formed；
（4）Deposit aluminium sesquioxide or silicon dioxide in silicon chip back side；
（5）Deposited silicon nitride on aluminium sesquioxide layer or silicon dioxide layer, forms backside passivation layer；
（6）Form the antireflecting passivating film of silicon nitride in described front side of silicon wafer；
（7）Print back electrode slurry in described silicon chip back side, dry；
（8）Adopt silk screen printing or ink-jetting style printing corrosion aluminium paste in described silicon chip back side, dry；
（9）Print full aluminum back electric field slurry in described silicon chip back side, cover corrosion aluminium paste, form full aluminum back electric field, dry；
（10）In described front side of silicon wafer print positive electrode slurry；
（11）Silicon chip is carried out high temperature sintering, corrosion aluminium paste corrosion backside passivation layer in sintering process, formed and connect full aluminum back of the body electricity
Field and the local aluminum back surface field of P-type silicon；
Described step（8）Middle employing vertical bar parallel arrangement mode printing corrosion aluminium paste.
7. the preparation method of passivating back solaode as claimed in claim 6 is it is characterised in that described local aluminum back surface field face
The long-pending 1%-10% accounting for described backside passivation layer area.
8. the preparation method of passivating back solaode as claimed in claim 7 is it is characterised in that described local aluminum back surface field
Vertical bar width is 20-30 μm, and bar number is 80-150 bar.
9. the preparation method of passivating back solaode as claimed in claim 6 is it is characterised in that described backside passivation layer is
Al2O3/SiNxComposite bed or SiO2/SiNxComposite bed.
10. the preparation method of passivating back solaode as claimed in claim 6 is it is characterised in that described backside passivation layer
Middle Al2O3Or SiO2Deposit thickness is 5-50nm, SiNxDeposit thickness is 50-200.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
| CN102569530A (en) * | 2012-02-24 | 2012-07-11 | 上饶光电高科技有限公司 | Local etching method for passivation dielectric layer on back side of crystal silicon solar cell |
| CN202585429U (en) * | 2011-12-27 | 2012-12-05 | 广东爱康太阳能科技有限公司 | Back point contact silicon solar cell |
| CN103618009A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Silk-screen printing back passivation battery and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
| CN202585429U (en) * | 2011-12-27 | 2012-12-05 | 广东爱康太阳能科技有限公司 | Back point contact silicon solar cell |
| CN102569530A (en) * | 2012-02-24 | 2012-07-11 | 上饶光电高科技有限公司 | Local etching method for passivation dielectric layer on back side of crystal silicon solar cell |
| CN103618009A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Silk-screen printing back passivation battery and preparation method thereof |
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