CN101388358B - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
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- CN101388358B CN101388358B CN2008101490074A CN200810149007A CN101388358B CN 101388358 B CN101388358 B CN 101388358B CN 2008101490074 A CN2008101490074 A CN 2008101490074A CN 200810149007 A CN200810149007 A CN 200810149007A CN 101388358 B CN101388358 B CN 101388358B
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- Prior art keywords
- interlayer dielectric
- diffusion barrier
- film
- hydrogen diffusion
- semiconductor device
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2005169371 | 2005-06-09 | ||
JP2005-169371 | 2005-06-09 | ||
JP2005169371A JP2006344783A (ja) | 2005-06-09 | 2005-06-09 | 半導体装置及びその製造方法 |
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CNB2005101071132A Division CN100468742C (zh) | 2005-06-09 | 2005-09-28 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101388358A CN101388358A (zh) | 2009-03-18 |
CN101388358B true CN101388358B (zh) | 2010-12-08 |
Family
ID=37510215
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CNB2005101071132A Expired - Fee Related CN100468742C (zh) | 2005-06-09 | 2005-09-28 | 半导体器件及其制造方法 |
CN2008101490074A Expired - Fee Related CN101388358B (zh) | 2005-06-09 | 2005-09-28 | 半导体器件的制造方法 |
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CNB2005101071132A Expired - Fee Related CN100468742C (zh) | 2005-06-09 | 2005-09-28 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7777262B2 (zh) |
JP (1) | JP2006344783A (zh) |
KR (1) | KR100763983B1 (zh) |
CN (2) | CN100468742C (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100989086B1 (ko) * | 2005-11-29 | 2010-10-25 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치와 그 제조 방법 |
JP4998461B2 (ja) | 2006-03-30 | 2012-08-15 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5109391B2 (ja) * | 2007-02-08 | 2012-12-26 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
WO2008114413A1 (ja) * | 2007-03-20 | 2008-09-25 | Fujitsu Microelectronics Limited | 半導体装置の製造方法 |
JP5215589B2 (ja) * | 2007-05-11 | 2013-06-19 | キヤノン株式会社 | 絶縁ゲート型トランジスタ及び表示装置 |
KR101432561B1 (ko) * | 2007-11-23 | 2014-08-22 | (주)소슬 | 박막 제조 방법 및 박막 제조 장치 |
US7993971B2 (en) * | 2007-12-28 | 2011-08-09 | Freescale Semiconductor, Inc. | Forming a 3-D semiconductor die structure with an intermetallic formation |
EP2138834B1 (en) * | 2008-06-26 | 2010-11-03 | ABB Technology Ltd | Arrangement, method for manufacturing of a test body, and method for determining a moisture content of the insulation of a power transformer during drying thereof |
JP5423056B2 (ja) * | 2009-03-02 | 2014-02-19 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US20110079878A1 (en) * | 2009-10-07 | 2011-04-07 | Texas Instruments Incorporated | Ferroelectric capacitor encapsulated with a hydrogen barrier |
JP5585241B2 (ja) * | 2010-06-25 | 2014-09-10 | セイコーエプソン株式会社 | 焦電型検出器、焦電型検出装置及び電子機器 |
CN104637864B (zh) * | 2013-11-14 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | 提高数据保持能力的方法 |
JP7027916B2 (ja) * | 2018-01-31 | 2022-03-02 | 富士通セミコンダクターメモリソリューション株式会社 | 半導体装置及びその製造方法 |
US11264571B2 (en) * | 2018-11-09 | 2022-03-01 | Samsung Display Co., Ltd. | Bake system and method of fabricating display device using the same |
CN115346915A (zh) * | 2021-05-14 | 2022-11-15 | 联华电子股份有限公司 | 半导体器件的制造方法 |
Citations (1)
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US6218197B1 (en) * | 1999-02-07 | 2001-04-17 | Nec Corporation | Embedded LSI having a FeRAM section and a logic circuit section |
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JP3362712B2 (ja) * | 1990-08-21 | 2003-01-07 | セイコーエプソン株式会社 | 半導体装置、それを用いた半導体メモリ及びcmos半導体集積回路並びにその半導体装置の製造方法 |
DE69433244T2 (de) * | 1993-08-05 | 2004-07-29 | Matsushita Electric Industrial Co., Ltd., Kadoma | Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante |
JP2757767B2 (ja) * | 1994-03-30 | 1998-05-25 | 日本電気株式会社 | 半導体装置の製造方法 |
US5935334A (en) * | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Substrate processing apparatus with bottom-mounted remote plasma system |
KR100329781B1 (ko) * | 1999-06-28 | 2002-03-25 | 박종섭 | 수소확산을 방지할 수 있는 강유전체 메모리 소자 제조 방법 |
JP2001015696A (ja) * | 1999-06-29 | 2001-01-19 | Nec Corp | 水素バリヤ層及び半導体装置 |
JP2001144084A (ja) * | 1999-11-18 | 2001-05-25 | Canon Sales Co Inc | 成膜方法及び半導体装置 |
JP4006929B2 (ja) * | 2000-07-10 | 2007-11-14 | 富士通株式会社 | 半導体装置の製造方法 |
KR100534985B1 (ko) | 2001-01-15 | 2005-12-08 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치 및 그 제조방법 |
JP2003068987A (ja) | 2001-08-28 | 2003-03-07 | Matsushita Electric Ind Co Ltd | 半導体記憶装置およびその製造方法 |
US6713310B2 (en) * | 2002-03-08 | 2004-03-30 | Samsung Electronics Co., Ltd. | Ferroelectric memory device using via etch-stop layer and method for manufacturing the same |
JP4090766B2 (ja) * | 2002-03-19 | 2008-05-28 | 富士通株式会社 | 半導体装置の製造方法 |
JP3833580B2 (ja) * | 2002-06-20 | 2006-10-11 | 富士通株式会社 | 半導体装置の製造方法 |
JP3847683B2 (ja) * | 2002-08-28 | 2006-11-22 | 富士通株式会社 | 半導体装置の製造方法 |
JP3961399B2 (ja) * | 2002-10-30 | 2007-08-22 | 富士通株式会社 | 半導体装置の製造方法 |
WO2004059736A1 (ja) * | 2002-12-25 | 2004-07-15 | Fujitsu Limited | 半導体装置の製造方法 |
JP2004303995A (ja) | 2003-03-31 | 2004-10-28 | Seiko Epson Corp | 半導体装置の構造およびその製造方法 |
WO2004095578A1 (ja) * | 2003-04-24 | 2004-11-04 | Fujitsu Limited | 半導体装置及びその製造方法 |
US20050212020A1 (en) * | 2003-04-24 | 2005-09-29 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
CN100470806C (zh) | 2003-05-27 | 2009-03-18 | 松下电器产业株式会社 | 半导体器件的制造方法 |
JP2005116756A (ja) * | 2003-10-07 | 2005-04-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2005217044A (ja) * | 2004-01-28 | 2005-08-11 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US7265403B2 (en) * | 2004-03-30 | 2007-09-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
JP2008028229A (ja) * | 2006-07-24 | 2008-02-07 | Seiko Epson Corp | 強誘電体メモリの製造方法 |
-
2005
- 2005-06-09 JP JP2005169371A patent/JP2006344783A/ja active Pending
- 2005-09-19 US US11/229,075 patent/US7777262B2/en not_active Expired - Fee Related
- 2005-09-28 CN CNB2005101071132A patent/CN100468742C/zh not_active Expired - Fee Related
- 2005-09-28 CN CN2008101490074A patent/CN101388358B/zh not_active Expired - Fee Related
- 2005-09-28 KR KR1020050090318A patent/KR100763983B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6218197B1 (en) * | 1999-02-07 | 2001-04-17 | Nec Corporation | Embedded LSI having a FeRAM section and a logic circuit section |
Non-Patent Citations (1)
Title |
---|
US2005/0012133A1 2005.1-.20 |
Also Published As
Publication number | Publication date |
---|---|
KR20060128603A (ko) | 2006-12-14 |
CN100468742C (zh) | 2009-03-11 |
US7777262B2 (en) | 2010-08-17 |
CN1877841A (zh) | 2006-12-13 |
US20060278954A1 (en) | 2006-12-14 |
KR100763983B1 (ko) | 2007-10-08 |
JP2006344783A (ja) | 2006-12-21 |
CN101388358A (zh) | 2009-03-18 |
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