CN204714943U - A kind of polycrystalline ingot furnace argon purge guiding device - Google Patents
A kind of polycrystalline ingot furnace argon purge guiding device Download PDFInfo
- Publication number
- CN204714943U CN204714943U CN201520407923.9U CN201520407923U CN204714943U CN 204714943 U CN204714943 U CN 204714943U CN 201520407923 U CN201520407923 U CN 201520407923U CN 204714943 U CN204714943 U CN 204714943U
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- CN
- China
- Prior art keywords
- graphite
- wallboard
- production well
- quartz crucible
- flow deflector
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052786 argon Inorganic materials 0.000 title claims abstract description 19
- 238000010926 purge Methods 0.000 title claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 51
- 239000010439 graphite Substances 0.000 claims abstract description 51
- 239000007789 gas Substances 0.000 claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000010453 quartz Substances 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 230000000903 blocking effect Effects 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052710 silicon Inorganic materials 0.000 abstract description 21
- 239000010703 silicon Substances 0.000 abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 description 23
- 238000000034 method Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Abstract
A kind of polycrystalline ingot furnace argon purge guiding device, comprise quartz crucible, graphite wallboard is installed outside the surrounding of quartz crucible, several production wells are arranged at intervals with at graphite upper wall portion, in the upper surface of graphite protective plate, one cover plate is installed, a through hole is provided with at the middle part of cover plate, the inlet pipe of the one external argon gas vertically arranged is inserted into the top of quartz crucible through through hole, described production well is taper hole, the osculum of production well is located on the outer surface of graphite wallboard, the large mouth of production well is located on the inner surface of graphite wallboard, on the outer surface of graphite wallboard along the circumference of graphite wallboard be horizontally installed with one be tilted under flow deflector, the integral inclined outside of blocking at production well of flow deflector.The utility model, by reducing the flow pattern of production well area and change foreign gas, effectively prevents foreign gas from after production well is discharged, flowing back to again crucible internal space, causes secondary pollution, fully ensure that the quality of silicon ingot to silicon ingot.
Description
Technical field:
The utility model relates to a kind of polycrystalline ingot furnace argon purge guiding device.
Background technology:
At present, in photovoltaic solar industry production polycrystal silicon ingot process, adopt directional solidification processes, the equipment of use is polycrystalline silicon ingot casting directional solidification furnace more.Polycrystalline ingot furnace thermal field is made up of high temperature material, comprises graphite heater, celion attemperator.In ingot casting process, need graphite heater to produce the high temperature of 1500 DEG C, fusing is contained in the original silicon silicon material of quartz crucible.After having melted, silicon solution prolongs radial symmetry gradient directional freeze.In above process, the container placing silicon materials is quartz crucible, the high temperature needed for melted silicon material; higher than the softening temperature of quartz crucible; so the graphite protective plate of high strength will be placed in the surrounding of quartz crucible and bottom, shield, prevent quartz crucible deformation fracture under high temperature.Need above quartz crucible to add cover plate, prevent thermal field to drop foreign material.For balance silicon solution is to the expansionary force of surrounding, graphite protective plate height needs the maximum height higher than silicon solution.Because silicon material uses chunk polysilicon, when filling with substance can produce the space of 30%.Although so the top of quartz crucible has been overflowed in charging, after fusing, still certain space can be formed at cover plate and silicon ingot surface.
In crystal growth process, silicon solution contacts with quartz crucible, and SiO gas contacts with graphite field, in high temperature environments following reaction can occur: Si (Gu)+SiO2 (Gu)=2SiO (gas); SiO (gas)+C (Gu)=CO (gas)+Si (Gu); CO (gas)+2Si (Gu)=SiC (Gu)+SiO (gas).If above-mentioned reactant gases does not have to take away discharge from silicon solution surface space in time, then impurity can enter silicon ingot inside and separates out, and affect Ingot quality and yield of cutting into slices.
According to Bernoulli equation: p+1/2 ρ v2+ ρ gh=C, crucible cover plate air inlet port area determines argon inlet gas velocity, and the production well area of backplate determines to give vent to anger gas flow rate.When gas flow is certain, gas flow rate is larger, and the pressure of position is less.And existing argon gas flow guide system, the size of production well is general comparatively large, comparatively slow by the gas flow rate of air outlet, and the pressure of Gu Chuqikouchu is comparatively large, and after foreign gas flows out crucible inside from air outlet, easy secondary back pollutes silicon ingot.
Utility model content:
The utility model is in order to make up the deficiencies in the prior art, provide a kind of polycrystalline ingot furnace argon purge guiding device, its reasonable in design, simple structure, easy for installation, cheap, by reducing the flow pattern of production well area and change foreign gas, the impurity of more silicon liquid volatilization effectively can either be taken away by argon purge, can prevent foreign gas from production well discharge after not only but also flow back to crucible internal space, secondary pollution is caused to silicon ingot, substantially increase the elimination effect of foreign gas, fully ensure that the quality of silicon ingot, solve problems of the prior art.
The utility model for solving the problems of the technologies described above adopted technical scheme is:
A kind of polycrystalline ingot furnace argon purge guiding device, comprise the quartz crucible that a horizontally disposed upper end is open, at the outer side bottom surface of quartz crucible, graphite base plate is installed, graphite wallboard is installed outside the surrounding of quartz crucible, the top of graphite wallboard exceeds the upper end of quartz crucible, the part exceeding quartz crucible at graphite upper wall portion is arranged at intervals with several production wells along the circumference of graphite wallboard, in the upper surface of graphite protective plate, one cover plate is installed, well heater is respectively equipped with in the outside of cover plate and graphite wallboard, a through hole is provided with at the middle part of cover plate, the inlet pipe of the one external argon gas vertically arranged is inserted into the top of quartz crucible through through hole, described production well is taper hole, the osculum of production well is located on the outer surface of graphite wallboard, the large mouth of production well is located on the inner surface of graphite wallboard, on the outer surface of graphite wallboard along the circumference of graphite wallboard be horizontally installed with one be tilted under flow deflector, the upper end of flow deflector is connected with graphite wallboard screw thread, the unsettled setting in lower end of flow deflector, and the integral inclined outside of blocking at production well of flow deflector.
The utility model adopts such scheme, reasonable in design, simple structure, easy for installation, cheap, by reducing the flow pattern of production well area and change foreign gas, the impurity of more silicon liquid volatilization effectively can either be taken away by argon purge, can prevent foreign gas from production well discharge after not only but also flow back to crucible internal space, secondary pollution is caused to silicon ingot, substantially increase the elimination effect of foreign gas, fully ensure that the quality of silicon ingot, achieve the object effectively reducing silicon ingot carbon oxygen content.
Accompanying drawing illustrates:
Fig. 1 is structural representation of the present utility model.
In figure, 1, quartz crucible, 2, graphite base plate, 3, graphite wallboard, 4, production well, 5, cover plate, 6, well heater, 7, inlet pipe, 8, flow deflector.
Embodiment:
For clearly demonstrating the technical characterstic of this programme, below by embodiment, and in conjunction with its accompanying drawing, the utility model is elaborated.
As shown in Figure 1, a kind of polycrystalline ingot furnace argon purge guiding device, comprise the quartz crucible 1 that a horizontally disposed upper end is open, at the outer side bottom surface of quartz crucible 1, graphite base plate 2 is installed, graphite wallboard 3 is installed outside the surrounding of quartz crucible 1, the top of graphite wallboard 3 exceeds the upper end of quartz crucible 1, the part exceeding quartz crucible 1 on graphite wallboard 3 top is arranged at intervals with several production wells 4 along the circumference of graphite wallboard 3, one cover plate 5 is installed in the upper surface of graphite protective plate, well heater 6 is respectively equipped with in the outside of cover plate 5 and graphite wallboard 3, a through hole is provided with at the middle part of cover plate 5, the inlet pipe 7 of the one external argon gas vertically arranged is inserted into the top of quartz crucible 1 through through hole, described production well 4 is taper hole, the osculum of production well 4 is located on the outer surface of graphite wallboard 3, the large mouth of production well 4 is located on the inner surface of graphite wallboard 3, on the outer surface of graphite wallboard 3 along the circumference of graphite wallboard 3 be horizontally installed with one be tilted under flow deflector 8, the upper end of flow deflector 8 is connected with graphite wallboard 3 screw thread, the unsettled setting in lower end of flow deflector 8, and flow deflector 8 is integral inclined blocks in the outside of production well 4.
During polycrystalline ingot furnace melting original silicon, under the continuous heating of well heater 6, temperature in quartz crucible 1 constantly rises, block original silicon is melted into liquid gradually, in the inner side of surrounding graphite wallboard 3, a cavity is formed between cover plate 5 and fluid surface, the foreign gas constantly separated out in fusion process enters in cavity, it is distinguished and admirable that the argon gas be now blown into from inlet pipe 7 runs into liquid level, and then air flow swirl is formed in cavity, the argon gas of flowing drives the foreign gas in cavity to be discharged by each production well 4, production well 4 is designed to taper, large mouth communicates with cavity, increase the contact area with foreign gas in cavity, foreign gas is made to enter each production well 4 smoothly with argon gas, osculum communicates with space outerpace, speed when air-flow flows out from osculum is because the acceleration of tapered hole, its gas flow rate is far longer than gas flow rate when internal gas flow enters production well 4, according to Bernoulli equation: p+1/2 ρ v2+ ρ gh=C, when gas flow is certain, gas flow rate is larger, the pressure of position is less, so time osculum outside pressure much smaller than the pressure inside large mouth, the foreign gas flowed out not easily is recharged by secondary and is made the return trip empty in chamber, and owing to blocking the flow deflector 8 of downward-sloping setting in the outside of each production well 4, from the foreign gas that production well 4 blows out, inner surface along flow deflector 8 after being ejected into flow deflector 8 first flows downward, flow deflector 8 upwards loss is then walked around when flowing to flow deflector 8 lower end, flow deflector 8 foreign gas that can effectively completely cut off above outside it is recharged by production well 4 and is made the return trip empty in chamber, avoid the secondary pollution of inner silicon ingot to greatest extent, ensure that the stability of quality product, be suitable for extensively promoting the use of.
Above-mentioned embodiment can not as the restriction to the utility model protection domain, and for those skilled in the art, any alternate modification make the utility model embodiment or conversion all drop in protection domain of the present utility model.
The utility model does not describe part in detail, is the known technology of those skilled in the art of the present technique.
Claims (1)
1. a polycrystalline ingot furnace argon purge guiding device, comprise the quartz crucible that a horizontally disposed upper end is open, at the outer side bottom surface of quartz crucible, graphite base plate is installed, graphite wallboard is installed outside the surrounding of quartz crucible, the top of graphite wallboard exceeds the upper end of quartz crucible, the part exceeding quartz crucible at graphite upper wall portion is arranged at intervals with several production wells along the circumference of graphite wallboard, in the upper surface of graphite protective plate, one cover plate is installed, well heater is respectively equipped with in the outside of cover plate and graphite wallboard, a through hole is provided with at the middle part of cover plate, the inlet pipe of the one external argon gas vertically arranged is inserted into the top of quartz crucible through through hole, it is characterized in that: described production well is taper hole, the osculum of production well is located on the outer surface of graphite wallboard, the large mouth of production well is located on the inner surface of graphite wallboard, on the outer surface of graphite wallboard along the circumference of graphite wallboard be horizontally installed with one be tilted under flow deflector, the upper end of flow deflector is connected with graphite wallboard screw thread, the unsettled setting in lower end of flow deflector, and the integral inclined outside of blocking at production well of flow deflector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520407923.9U CN204714943U (en) | 2015-06-12 | 2015-06-12 | A kind of polycrystalline ingot furnace argon purge guiding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520407923.9U CN204714943U (en) | 2015-06-12 | 2015-06-12 | A kind of polycrystalline ingot furnace argon purge guiding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204714943U true CN204714943U (en) | 2015-10-21 |
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| CN201520407923.9U Expired - Fee Related CN204714943U (en) | 2015-06-12 | 2015-06-12 | A kind of polycrystalline ingot furnace argon purge guiding device |
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| CN (1) | CN204714943U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568373A (en) * | 2016-03-14 | 2016-05-11 | 常州兆晶光能有限公司 | Polycrystalline silicon ingot furnace protection gas circulation system |
| CN105970287A (en) * | 2016-05-23 | 2016-09-28 | 大工（青岛）新能源材料技术研究院有限公司 | Adjustable graphite crucible |
| CN107385511A (en) * | 2016-02-03 | 2017-11-24 | 陈鸽 | A kind of polycrystalline silicon ingot or purifying furnace with guiding device |
| CN107601515A (en) * | 2017-10-27 | 2018-01-19 | 北方民族大学 | A kind of device for preparing SiO powder |
| CN108048903A (en) * | 2016-02-03 | 2018-05-18 | 陈鸽 | A kind of drainage system for changing carrier gas flow direction |
-
2015
- 2015-06-12 CN CN201520407923.9U patent/CN204714943U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107385511A (en) * | 2016-02-03 | 2017-11-24 | 陈鸽 | A kind of polycrystalline silicon ingot or purifying furnace with guiding device |
| CN107385510A (en) * | 2016-02-03 | 2017-11-24 | 陈鸽 | A kind of polycrystalline silicon ingot or purifying furnace with guiding device |
| CN108048903A (en) * | 2016-02-03 | 2018-05-18 | 陈鸽 | A kind of drainage system for changing carrier gas flow direction |
| CN105568373A (en) * | 2016-03-14 | 2016-05-11 | 常州兆晶光能有限公司 | Polycrystalline silicon ingot furnace protection gas circulation system |
| CN105970287A (en) * | 2016-05-23 | 2016-09-28 | 大工（青岛）新能源材料技术研究院有限公司 | Adjustable graphite crucible |
| CN107601515A (en) * | 2017-10-27 | 2018-01-19 | 北方民族大学 | A kind of device for preparing SiO powder |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151021 |