CN101276797A - 电性光学装置 - Google Patents
电性光学装置 Download PDFInfo
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- CN101276797A CN101276797A CNA2008100885442A CN200810088544A CN101276797A CN 101276797 A CN101276797 A CN 101276797A CN A2008100885442 A CNA2008100885442 A CN A2008100885442A CN 200810088544 A CN200810088544 A CN 200810088544A CN 101276797 A CN101276797 A CN 101276797A
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- 238000009826 distribution Methods 0.000 claims description 224
- 229910052750 molybdenum Inorganic materials 0.000 claims description 184
- 239000011733 molybdenum Substances 0.000 claims description 184
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 183
- 238000000576 coating method Methods 0.000 claims description 153
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- 238000005530 etching Methods 0.000 claims description 111
- 230000015572 biosynthetic process Effects 0.000 claims description 92
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 16
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical group [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 13
- 230000001174 ascending effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 185
- 239000010936 titanium Substances 0.000 description 180
- 235000016768 molybdenum Nutrition 0.000 description 179
- 229910052719 titanium Inorganic materials 0.000 description 177
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 175
- 238000005516 engineering process Methods 0.000 description 70
- 229910052782 aluminium Inorganic materials 0.000 description 65
- 239000004411 aluminium Substances 0.000 description 65
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 62
- 238000000034 method Methods 0.000 description 56
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- 238000001312 dry etching Methods 0.000 description 48
- 239000007789 gas Substances 0.000 description 38
- 239000011521 glass Substances 0.000 description 37
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 36
- 238000001259 photo etching Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 31
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 27
- 239000004973 liquid crystal related substance Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 22
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 18
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 18
- 229910020776 SixNy Inorganic materials 0.000 description 18
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 18
- 229910017604 nitric acid Inorganic materials 0.000 description 18
- 239000012212 insulator Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 239000007788 liquid Substances 0.000 description 14
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 13
- 239000000460 chlorine Substances 0.000 description 13
- 229910052801 chlorine Inorganic materials 0.000 description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 229910052731 fluorine Inorganic materials 0.000 description 12
- 239000011737 fluorine Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 11
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
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- 238000009434 installation Methods 0.000 description 5
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- 239000012535 impurity Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- GDXTWKJNMJAERW-UHFFFAOYSA-J molybdenum(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Mo+4] GDXTWKJNMJAERW-UHFFFAOYSA-J 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-082769 | 2007-03-27 | ||
JP2007082769 | 2007-03-27 | ||
JP2007082768 | 2007-03-27 | ||
JP2007-082768 | 2007-03-27 | ||
JP2007153348A JP4329847B2 (ja) | 2007-03-27 | 2007-06-08 | 電気光学装置及び電気光学装置製造方法 |
JP2007-153348 | 2007-06-08 | ||
JP2007153349A JP4353282B2 (ja) | 2007-03-27 | 2007-06-08 | 電気光学装置 |
JP2007-153349 | 2007-06-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101276797A true CN101276797A (zh) | 2008-10-01 |
CN101276797B CN101276797B (zh) | 2010-11-03 |
Family
ID=39996017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100885442A Expired - Fee Related CN101276797B (zh) | 2007-03-27 | 2008-03-27 | 电性光学装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4329847B2 (zh) |
CN (1) | CN101276797B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103972263A (zh) * | 2013-01-28 | 2014-08-06 | 索尼公司 | 显示单元及其制造方法和电子设备 |
CN106549019A (zh) * | 2015-09-18 | 2017-03-29 | 株式会社日本显示器 | 半导体器件及其制造方法 |
CN109768015A (zh) * | 2019-01-29 | 2019-05-17 | 南京中电熊猫平板显示科技有限公司 | 一种阵列基板及其制造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015166652A1 (ja) * | 2014-05-02 | 2015-11-05 | 株式会社Joled | 薄膜トランジスタ装置、及びそれを用いた表示装置 |
US10020323B2 (en) | 2014-05-02 | 2018-07-10 | Joled Inc. | Thin-film transistor device and display device using same |
-
2007
- 2007-06-08 JP JP2007153348A patent/JP4329847B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-27 CN CN2008100885442A patent/CN101276797B/zh not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103972263A (zh) * | 2013-01-28 | 2014-08-06 | 索尼公司 | 显示单元及其制造方法和电子设备 |
CN106952929A (zh) * | 2013-01-28 | 2017-07-14 | 索尼公司 | 显示单元及其制造方法和电子设备 |
CN108109963A (zh) * | 2013-01-28 | 2018-06-01 | 索尼公司 | 显示单元及其制造方法和电子设备 |
US10341475B2 (en) | 2013-01-28 | 2019-07-02 | Sony Corporation | Display unit, method of manufacturing the same, and electronic apparatus |
CN108109963B (zh) * | 2013-01-28 | 2022-07-01 | 索尼公司 | 显示单元及其制造方法和电子设备 |
CN106549019A (zh) * | 2015-09-18 | 2017-03-29 | 株式会社日本显示器 | 半导体器件及其制造方法 |
CN106549019B (zh) * | 2015-09-18 | 2020-01-10 | 株式会社日本显示器 | 半导体器件及其制造方法 |
CN109768015A (zh) * | 2019-01-29 | 2019-05-17 | 南京中电熊猫平板显示科技有限公司 | 一种阵列基板及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4329847B2 (ja) | 2009-09-09 |
CN101276797B (zh) | 2010-11-03 |
JP2008268830A (ja) | 2008-11-06 |
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Owner name: NANKAI UNIVERSITY Free format text: FORMER OWNER: SANYO EPSON IMAGING DEVICES CO. Effective date: 20100729 |
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Effective date of registration: 20100729 Address after: Tokyo, Japan Applicant after: Sony Corp. Address before: Nagano Applicant before: Sanyo Epson Imaging Devices Co. |
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Owner name: NIPPON DISPLAY CO., LTD. Free format text: FORMER OWNER: SONY CORPORATION Effective date: 20121122 |
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Effective date of registration: 20121122 Address after: Aichi Patentee after: Japan display West Co.,Ltd. Address before: Tokyo, Japan Patentee before: Sony Corp. |
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Granted publication date: 20101103 Termination date: 20210327 |
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