CN101202275A - 具有屏蔽壳的封装 - Google Patents

具有屏蔽壳的封装 Download PDF

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CN101202275A
CN101202275A CNA2007101948694A CN200710194869A CN101202275A CN 101202275 A CN101202275 A CN 101202275A CN A2007101948694 A CNA2007101948694 A CN A2007101948694A CN 200710194869 A CN200710194869 A CN 200710194869A CN 101202275 A CN101202275 A CN 101202275A
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substrate
shielding case
encapsulation
electronic component
sweep
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芳野裕也
井上明宣
加治木笃典
赤池贞和
山西学雄
坪田崇
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Shinko Electric Industries Co Ltd
Shinko Electric Co Ltd
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Abstract

本发明涉及一种封装，其包含：封装主体，包含基板、安装在基板的第一表面上的电子元件、和用于密封电子元件的密封树脂层；以及屏蔽壳，其用于覆盖密封树脂层，屏蔽壳由金属制成并且在横截面视图中具有倒U形。其中，屏蔽壳的弯曲部分以这样的方式形成，即，屏蔽壳的末端至少有一部分被弯向与第一表面相对的基板第二表面，并且弯曲部分与第二表面紧靠以使屏蔽壳安装到基板上。

Description

具有屏蔽壳的封装
本申请根据并要求2006年12月13日提交的申请号为2006-335958的日本专利申请的优先权，其整个内容已经通过引用合并入本申请中。
技术领域
本发明涉及一种具有屏蔽壳的封装，尤其是涉及其中安装着电子元件的基板的一个表面用金属屏蔽壳覆盖的一种封装。
背景技术
在具有屏蔽壳的封装中，安装着电子元件的基板的一个表面用金属屏蔽壳覆盖，并且如图4所示的封装在如公开号为10-284935的未审查的日本专利中被提出。
在如图4所示的封装中，多个爪式部分104、104、……的每一个在金属屏蔽壳102的下端面中形成，用于覆盖基板100的一个表面，并且被安装在形成于基板100侧面中的多个凹槽106、106、……的对应凹槽106中。
在如图4所示的封装中，用于覆盖电子元件108、108、……(如安装在基板100的一个表面上的半导体元件)的屏蔽壳102的爪式部分104被安装在形成于基板100侧面中的凹槽106中，并且如图5中的横截面视图所示，其也被通过焊料112焊接在形成于凹槽106的壁表面上的电镀层110上。
此外，作为多个外部连接端子的焊球114、114、……形成在基板100的另一个表面上。
如图4和5所示的封装能够被优选使用在其中高频元件作为电子元件被安装在基板的一个表面上的封装中。
但是，如图6所示，在具有屏蔽壳的传统的封装中，必须使用在其侧表面上形成凹槽106、106、……的基板100。这样，很难使用树脂来密封安装在基板100的一个表面上的电子元件108、108、……。
即，如图7所示，在工业制造如图6所示的基板100的情况下，在其中形成多个基板100、100、……的大尺寸原始基板200形成之后，在大尺寸原始基板200上形成了凹槽106、106、……的部分中形成椭圆形通孔202、202、……，然后在椭圆形通孔202、202、……的内壁表面上使用化学镀等形成电镀层110。
接下来，在各种电子元件被安装在由椭圆形通孔202、202、……围成的区域上后，原始基板200根据通过椭圆形通孔202、202、……的中心的线204、204、……被切割，并且这样能够获得如图6所示的基板100。
之后，屏蔽壳102被安装到基板100，并且形成在屏蔽壳102的下端面中的对应爪式部分104被安装到形成在基板100的侧表面上的每个凹槽106、106、……中，然后焊接爪式部分104。
在这种情况下，在电子元件108、108、……被安装到其上形成椭圆形通孔202、202、……的基板100的一个表面上后，当电子元件108、108、……用树脂密封时，有可能密封树脂渗入椭圆形通孔202，这样屏蔽壳102的爪式部分104就不能被安装。
因此，安装在基板100的一个表面上的电子元件108、108、……没有用树脂密封。在这种情况下，为了避免金属屏蔽壳102和电子元件108、108、……之间的接触，必须总是确保屏蔽壳102和电子元件108、108、……之间的间隙，这样就限制了对缩小封装尺寸的要求。
此外，能够引起与屏蔽壳102的接触的焊线不能被使用在电子元件108和基板100间的电气连接中，只能使用倒装芯片焊接。这样，即使对于具有屏蔽壳的封装，也要求在电子元件108和基板100间的电气连接中使用焊线。
发明内容
本发明解决了在传统的封装中安装在基板的一个表面上的电子元件不能用树脂密封的问题，本发明的目的是提供一种封装，其具有屏蔽壳，能够使用焊线实现电子元件和基板间的电气连接并且通过用树脂密封安装在基板的一个表面上的电子元件来实现尺寸缩小。
根据本发明的一个或者多个方面，封装包含：
封装主体，其包含：
基板；
安装在基板的第一表面的电子元件；
密封树脂层，其用于密封电子元件；以及
屏蔽壳，其用于覆盖密封树脂层，屏蔽壳由金属制成并且在横截面视图中具有倒U形，
其中，屏蔽壳的弯曲部分以这样的方式形成：屏蔽壳的末端至少有一部分被弯向与第一表面相对的基板第二表面，以及
弯曲部分与第二表面紧靠以使屏蔽壳安装到基板上。
根据本发明的第二个方面，当弯曲部分与第二表面紧靠时，弯曲部分可以具有朝向第二表面的弹力。
根据本发明的第三个方面，由金属制成的连接焊盘可以在弯曲部分紧靠的第二表面的一部分上形成。
根据本发明的第四个方面，封装主体还可以包含通过焊线电气连接到电子元件上的焊盘并且焊线可以用密封树脂层密封。
根据本发明的第五个方面，电子元件可以是半导体元件。
根据本发明的第六个方面，屏蔽壳可以安装到基板上，以使屏蔽壳的内表面与密封树脂层的表面紧密接触。
根据本发明的第二个方面，屏蔽壳可以确保被安装到基板上。
根据本发明的第三个方面，通过焊接屏蔽壳的弯曲部分和基板的连接焊盘，屏蔽壳可以紧密地安装到基板上。
根据本发明的第四个方面，可以确保防止焊线和屏蔽壳之间的接触。
根据本发明的第六个方面，封装可以被微型化。
在本发明的封装中，不需要提供安装部分来把屏蔽壳安装到基板的侧表面上，以便可形成用于密封安装在基板的一个表面(第一表面)上的电子元件的密封树脂层。
而且，可以确保防止屏蔽壳和电子元件之间的接触，并且不需要在电子元件和屏蔽壳之间提供间隙，从而封装可以被微型化。
而且，即使当安装在基板的一个表面(第一表面)上的电子元件通过焊线被电气连接到基板上，也可以形成用于密封电子元件和焊线的密封树脂层，并且可以确保防止焊线和屏蔽壳之间的接触。
附图说明
图1是示出本发明的具有屏蔽壳的封装的一个示例的透视图；
图2是示出图1所示的封装的横截面视图；
图3是示出能够在本发明中使用的屏蔽壳的另一个示例的透视图；
图4是示出具有屏蔽壳的传统封装的透视图；
图5是示出图4所示的封装的横截面视图；
图6是示出在图5所示的封装中使用的基板的透视图；
图7是示出形成图6所示的基板的原始基板的透视图。
具体实施方式
图1示出本发明的具有屏蔽壳的封装的一个示例。在如图1所示的具有屏蔽壳的封装10中，安装金属屏蔽壳14来覆盖封装主体12。屏蔽壳14由铜、镍和锌的合金(如镍黄铜)制成，厚度大约是50μm。
图2示出封装10的横截面视图。在封装主体12中，电子元件如半导体元件18a或者电容器18b被安装在基板16的一个表面(下文中称为“第一表面”)上，并且在基板16的第一表面上形成的焊盘部分(未示出)通过金丝焊线20、20被电气连接到半导体元件18a的电极(未示出)上。电子元件和焊线20、20由用于形成密封树脂层22的密封树脂密封。
在由密封树脂层22覆盖的屏蔽壳14中，横截面形状是倒U型并且下端的部分被弯向基板16的另一个表面(下文中称为“第二表面”)，这样形成弯曲部分14a。弯曲部分14a与形成在基板16的第二表面上的连接焊盘24、24紧靠，并且安装到基板16上。
如图2所示的屏蔽壳14的弯曲部分14a被弯成V型，当弯曲部分14a与基板16的连接焊盘24、24紧靠时，弯曲部分14a具有朝向连接焊盘24、24的弹力，从而屏蔽壳14能够确保安装到基板16上。
通过焊接连接焊盘24、24上与弯曲部分14a紧靠的位置，屏蔽壳14能够更紧密地安装到基板16上。
此外，作为封装10的外部连接端子的焊球26、26……被安装到基板16的第二表面上。
在如图1和2所示的封装10中，屏蔽壳14以这样的方式安装到基板16上：屏蔽壳14的内表面与密封树脂层22的表面紧密接触。电子元件如半导体元件18a和用于把半导体元件18a电气连接到基板16的焊线20由密封树脂层22用树脂密封，并且即使当屏蔽壳14以屏蔽壳14的内表面与密封树脂层22的表面紧密接触的方式安装到基板16上时，屏蔽壳14也不可能与电子元件或焊线接触。因此，不需要提供电子元件和屏蔽壳之间的间隙，于是能够缩小封装的尺寸。
在制造如图1和2所示的封装10中，首先形成封装主体12。
在封装主体12中，能够形成多个基板16的大尺寸原始基板被形成。在这个原始基板中没有形成如图7所示的椭圆形通孔202、202、……的通孔。
在电子元件如半导体元件18a或者电容器18b被安装在与原始基板的第一表面上的每个基板16相对应的部分的第一表面的预定位置上后，安装的半导体元件18a通过焊线20被电气连接到与基板16相对应的部分上。
然后，与每个基板16相对应的部分由树脂来制模，并且提供了用于密封焊线20和安装在与每个基板16对应的部分上的电子元件的密封树脂层22。之后，通过切割原始基板，能够形成具有预定形状的封装主体12。
此外，当在基板16的背面形成用于安装作为外部连接端子的焊球的端子连接焊盘(未示出)时，优选地是同时形成在基板16的背面上的连接焊盘24、24。
获得的封装主体12被***到事先通过压力加工等形成的屏蔽壳14中然后被安装，并且封装主体12的每个弯曲部分14a与基板16的连接焊盘24的每一个相匹配。
此外，当封装主体12被更紧密地安装到基板16上时，优选地把封装主体12的每个弯曲部分14a的紧靠部分焊接到基板16的每个连接焊盘24上。
如图1和2所示的屏蔽壳14中，在屏蔽壳14的下端面的一侧上形成一个弯曲部分14a，但是可以形成多个弯曲部分14a。在其下端面的一侧上形成多个弯曲部分14a的屏蔽壳14中，屏蔽壳14可以确保安装到基板16上。
此外，像图3所示的屏蔽壳14，弯曲部分14a可以沿着屏蔽壳14的下端面的边缘形成。在这种情况下，优选地在屏蔽壳14的另一侧上形成限动件14b以防止当封装主体12从屏蔽壳14的一侧***并被安装时封装主体12***过量。
在图1到3的说明中，当被安装的半导体元件18a通过焊线20被电气连接到基板16上时，显然半导体元件18a可以通过倒装芯片焊接被电气连接到基板16上。
与本发明有关的示范实施例被说明时，显然本领域所属技术人员可以不脱离本发明而进行各种改变和修改。因此，描述的目的是把所有在本发明的精神和范围内的改变和修改包含在所附权利要求中。

Claims (6)

1.一种封装，其包含：
封装主体，包含：
基板；
安装在基板的第一表面上的电子元件；
密封树脂层，其用于密封电子元件；以及
屏蔽壳，其用于覆盖密封树脂层，该屏蔽壳由金属制成并且在横截面视图中具有倒U形，
其中，所述屏蔽壳的弯曲部分以这样的方式形成：所述屏蔽壳的末端至少有一部分被弯向与所述第一表面相对的所述基板的第二表面，以及
所述弯曲部分与所述第二表面紧靠以使屏蔽壳安装到所述基板上。
2.如权利要求1所述的封装，其中
当所述弯曲部分与所述第二表面紧靠时，所述弯曲部分具有朝向所述第二表面的弹力。
3.如权利要求1所述的封装，其中
由金属制成的连接焊盘形成在所述弯曲部分紧靠的所述第二表面的一部分上。
4.如权利要求1所述的封装，其中
所述封装主体还包含通过焊线电气连接到所述电子元件的焊盘，以及
所述焊线由所述密封树脂层密封。
5.如权利要求4所述的封装，其中
所述电子元件是半导体元件。
6.如权利要求1所述的封装，其中
所述屏蔽壳安装到所述基板上，以使所述屏蔽壳的内表面与所述密封树脂层的表面紧密接触。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010103756A1 (ja) * 2009-03-10 2010-09-16 パナソニック株式会社 モジュール部品とその製造方法と、およびそのモジュール部品を用いた電子機器
JP5391747B2 (ja) * 2009-03-10 2014-01-15 パナソニック株式会社 モジュール部品とモジュール部品の製造方法と、これを用いた電子機器
DE102009014435A1 (de) * 2009-03-26 2010-10-14 J. Eberspächer GmbH & Co. KG Abgasbehandlungseinrichtung
JP2011035058A (ja) * 2009-07-30 2011-02-17 Sharp Corp 高周波モジュールおよび高周波モジュールが実装されたプリント配線基板
JP2011171656A (ja) * 2010-02-22 2011-09-01 Renesas Electronics Corp 半導体パッケージおよびその製造方法
KR101711045B1 (ko) * 2010-12-02 2017-03-02 삼성전자 주식회사 적층 패키지 구조물
KR101247719B1 (ko) * 2011-06-03 2013-03-26 에스티에스반도체통신 주식회사 전자파 차단형 반도체 패키지 장치 및 이의 제조방법
KR101994714B1 (ko) * 2013-05-21 2019-07-01 삼성전기주식회사 고주파 모듈
US10388611B2 (en) * 2017-03-13 2019-08-20 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming magnetic field shielding with ferromagnetic material
CN210897246U (zh) * 2017-04-28 2020-06-30 株式会社村田制作所 电路模块

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3085865B2 (ja) * 1994-11-08 2000-09-11 松下電器産業株式会社 回路ユニットのシールド装置
JPH10284935A (ja) 1997-04-09 1998-10-23 Murata Mfg Co Ltd 電圧制御発振器およびその製造方法
JPH10294585A (ja) * 1997-04-22 1998-11-04 Kokusai Electric Co Ltd プリント基板用シールドケース
JP2002534933A (ja) * 1999-01-07 2002-10-15 サーノフ コーポレイション プリント回路基板を有する大型ダイアフラムマイクロフォン素子を備えた補聴器
JP2001148594A (ja) * 1999-11-19 2001-05-29 Murata Mfg Co Ltd シールドケース付き電子部品
JP3793421B2 (ja) * 2001-04-10 2006-07-05 アルプス電気株式会社 面実装型電子回路ユニット及び面実装型電子回路ユニットの製造方法
JP2004128334A (ja) * 2002-10-04 2004-04-22 Hitachi Metals Ltd 高周波電子部品
JP4020795B2 (ja) * 2003-02-14 2007-12-12 三菱電機株式会社 半導体装置
JP2005101365A (ja) * 2003-09-25 2005-04-14 Kyocera Corp 電子装置
JP2006252390A (ja) * 2005-03-14 2006-09-21 Renesas Technology Corp Ｉｃカードの製造方法およびｉｃカード

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