CN101192584A - 电极,器件及具有该器件的电子装置 - Google Patents

电极,器件及具有该器件的电子装置 Download PDF

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Publication number
CN101192584A
CN101192584A CNA2007101934615A CN200710193461A CN101192584A CN 101192584 A CN101192584 A CN 101192584A CN A2007101934615 A CNA2007101934615 A CN A2007101934615A CN 200710193461 A CN200710193461 A CN 200710193461A CN 101192584 A CN101192584 A CN 101192584A
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China
Prior art keywords
gap
electrode
protruding
conducting particles
projection
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CNA2007101934615A
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English (en)
Inventor
藤田明
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Tianma Japan Ltd
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NEC LCD Technologies Ltd
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Publication of CN101192584A publication Critical patent/CN101192584A/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Abstract

一种设置在器件上的电极，包括向着器件的边缘变细的且从所述电极的端部到其不同端部而形成的间隙。

Description

电极，器件及具有该器件的电子装置
本申请基于并要求2006年11月11日提交的日本专利申请No.JP2006-318947的优先权，并通过引用将其全部并入于此。
技术领域
本发明涉及一种电极、器件及具有该器件的电子装置。更具体地讲，本发明涉及一种突出电极、具有用于外部连接的该突出电极的器件、以及具有下述基板的电子装置，在该基板上通过使用各向异性导电膜贴装有所述器件。
背景技术
对于用于便携式器件，如移动电话的显示器件，广泛使用平板显示器件，如液晶显示(LCD)器件。在发展大尺寸平板显示器件的同时，需要的是在其上高密度设置用于驱动平板显示器件的电路元件。
作为在平板显示器件上贴装电路元件的一种技术，COG(chip onglass)贴装方法是公知的。在COG贴装方法中，半导体元件(之后称作IC)作为驱动电路直接贴装在平板显示器件的基板上。形成在IC连接面上的凸起(bump)和形成在基板上的电极通过各向异性导电膜(之后称作ACF)电性并机械地连接。
ACF是能进行热压粘接的膜，其包括绝缘树脂和分散在其中的导电粒子。导电粒子例如是镀有Ni或Au的具有2μm到10μm直径的球形树脂球、或者金属粒子。当加热并挤压ACF时，绝缘树脂被软化并分散开。一些导电粒子被挤压并保持在IC的凸起和基板的电极之间。当绝缘树脂硬化时，导电粒子在IC的凸起与基板的电极之间形成电连接，从而将IC与基板中的电路电性连接。
图18显示了在基板上贴装IC9的过程中，在IC9上ACF的移动，ACF包括绝缘树脂和导电粒子。在图18中，在IC9的连接面上形成凸起线30A和凸起线30B。凸起线30A和30B的每个凸起31都包括四边形的横截面。凸起线30A和凸起线30B的凸起31在IC9的连接面上以交错结构设置。
当其上形成有凸起31的IC9贴装在显示器件的基板上时，ACF14设置在IC9的连接面与显示器件的基板之间。当加热并挤压ACF14时，包含在ACF14中的绝缘树脂***。然后绝缘树脂与导电粒子15一起分布在IC9的连接面上。一些导电粒子15与绝缘树脂一起流出凸起线。此外其他一些导电粒子15被夹在凸起31与相对基板的电极之间。被夹持的导电粒子15在IC9的凸起31与显示器件的基板之间形成了电连接。
这里，当凸起线30A与凸起线30B之间的距离或者凸起31之间的距离较短时，凸起31干扰导电粒子15的流动。结果，导电粒子15保留在凸起线30A与凸起线30B之间，并还保留在凸起31之间。之间保留的导电粒子15极易于聚集。聚集的导电粒子15使得凸起31短路并在凸起线之间和凸起31之间造成短路故障。
这里，为了阻止由导电粒子15聚集造成的短路故障，提出了一种降低ACF14中导电粒子15的填充密度的技术。在该技术中，在凸起31与基板电极之间被俘获的导电粒子15的数量降低。因此，可能发生IC9与显示器件之间的断路。
在现有技术(日本特开No.2001-358165)中公开了另一种技术，用于抑制在凸起线30之间和在凸起31之间造成短路故障的导电粒子15的聚集。在该现有技术中，凸起32的横截面是椭圆形的，如图19中所示。通过使用具有椭圆形横截面形状的凸起32，ACF可平滑地流到IC9的凸起线之外。由此，可阻止导电粒子15停留在凸起32之间。因此可阻止凸起32之间的短路故障。
发明内容
本发明的典型目的是提供一种突出电极，其可抑制短路发生并能在器件之间进行出色的电性连接，并提供了一种具有该突出电极的器件以及具有该器件的电子装置。
依照本发明一个典型方面的设置在器件上的电极包括向着器件的边缘变细的且从所述电极的端部到其不同端部而形成的间隙。
依照本发明一个典型方面的设置在器件上的电极用于通过包含导电粒子和树脂的各向异性导电膜与电子装置电性连接。该电极包括从电极的上部形成的间隙。通过加热而软化的一部分树脂流过间隙。该间隙在所述树脂流过的方向上变细。
依照本发明一个典型方面的器件包括设置在其上的多个电极。至少一个电极具有间隙，该间隙向着所述器件的边缘变细，且从电极的端部到其不同的端部形成该间隙。
依照本发明一个典型方面的器件包括设置在其上的多个电极，该电极通过包含导电粒子和树脂的各向异性导电膜连接所述器件和电子装置。至少一个电极包括从电极的上部形成的间隙。通过加热而软化的一部分树脂流过该间隙，且该间隙在所述树脂流过的方向上变细。
依照本发明一个典型方面的电子装置包括包导电部和器件，该器件包括多个电极，该多个电极通过包含导电粒子和树脂的各向异性导电膜与所述导电部电性连接。至少一个电极具有从电极的上部形成的间隙。通过加热而软化的一部分树脂流过该间隙，且该间隙在所述树脂流过的方向上变细。
附图说明
当结合附图时，本发明典型的特征和优点将从下面的详细描述而变得显而易见，其中：
图1A是依照本发明第一典型实施例的IC的顶视图；
图1B是依照本发明第一典型实施例的IC的部分顶视图；
图2是依照本发明第一典型实施例的具有凸起的IC的部分透视图；
图3是依照本发明第一典型实施例的在其上具有IC的显示器件的透视图；
图4是依照本发明第一典型实施例的在贴装IC时显示器件的部分透视图；
图5是依照本发明第一典型实施例的、其中薄膜晶体管基板突出的区域的部分顶视图；
图6是依照本发明第一典型实施例的显示器件的部分截面图；
图7是依照本发明第一典型实施例的在贴装IC时IC的部分顶视图；
图8是依照本发明第一典型实施例的在贴装IC时IC的部分透视图；
图9A到9E是显示依照本发明第一典型实施例的凸起的形成工艺的工艺图；
图10A到10E是显示依照本发明第一典型实施例的具有间隙的凸起的形成工艺的工艺图；
图11是依照本发明第一典型实施例的不同IC的透视图；
图12A是显示依照本发明第二典型实施例的凸起的结构的透视图；
图12B是显示依照本发明第二典型实施例的凸起的结构的顶视图；
图12C是显示依照本发明第二典型实施例的凸起的结构的底视图；
图12D是显示依照本发明第二典型实施例的凸起的结构的左侧视图；
图12E是显示依照本发明第二典型实施例的凸起的结构的右侧视图；
图13A是显示依照本发明第二典型实施例的不同凸起的结构的透视图；
图13B是显示依照本发明第二典型实施例的不同凸起的结构的顶视图；
图13C是显示依照本发明第二典型实施例的不同凸起的结构的底视图；
图13D是显示依照本发明第二典型实施例的不同凸起的结构的左侧视图；
图13E是显示依照本发明第二典型实施例的不同凸起的结构的右侧视图；
图14是依照本发明第三典型实施例的在贴装IC时IC的部分顶视图；
图15是依照本发明第三典型实施例的在贴装IC时不同IC的部分顶视图；
图16A是显示依照本发明第四典型实施例的凸起的结构的透视图；
图16B是显示依照本发明第四典型实施例的凸起的结构的顶视图；
图16C是显示依照本发明第四典型实施例的凸起的结构的右侧视图；
图17A是显示依照本发明第五典型实施例的不同凸起的结构的透视图；
图17B是显示依照本发明第五典型实施例的不同凸起的结构的顶视图；
图17C是显示依照本发明第五典型实施例的不同凸起的结构的右侧视图；
图18是在贴装现有技术的半导体器件时半导体器件的部分顶视图；以及
图19是依照现有技术1的其中形成有半导体器件凸起的部分的部分顶视图。
具体实施方式
现在将根据附图详细描述本发明的典型实施例。
1.第一典型实施例
下面将使用图1到10描述第一典型实施例。图1A显示了依照该典型实施例的半导体器件的凸起结构的顶视图。如图1A中所示，依照该典型实施例，在IC9的连接面上直线设置有多个凸起(即突出电极)。在图1A中，在IC9的连接面上形成有凸起线18C，其包括有在IC9的长边内的沿IC9边缘线的凸起1C。在IC9的另一个长边内沿IC9的边缘线形成有凸起线18A和18B这两条线。如图1A中所示，在该典型实施例中，凸起1C之间的距离长于凸起1A之间的距离并长于凸起1B之间的距离。
图1B是其中在IC9的连接面上设置有凸起线18A和18B的部分的部分顶视图。在图1B中，凸起线18A的凸起1A和凸起线18B的凸起1B以交错的结构设置在IC9的连接面上。设置在IC9的边缘侧上的凸起线18A中的每个凸起1A都包括横截面为梯形形状的两部分。凸起1A通过在IC9的短边方向上延伸的间隙(gap)2被分为两部分。间隙2逐渐变细，使得间隙2的宽度向着IC9的长边缘侧逐渐变小。设置在凸起18A内侧的凸起线18B的凸起1B的水平横截面形状为正方形或矩形。
图2中显示了IC9的连接面的部分透视图。凸起线18A和18B形成在IC9的连接面上。在图2中，当凸起1B形成为四边形柱体时，凸起1A包括由锥形间隙2分割的两个梯形柱。
接下来，将描述其上贴装有具有凸起的IC9的显示器件。图3显示了依照该典型实施例的显示器件的透视图。显示器件包括用于驱动液晶的IC9和用于给LCD面板10上的IC9传输驱动信号和电力的FPC(柔性印刷电路)13。LCD面板10包括其上形成有开关元件，如TFT(薄膜晶体管)等的基板(之后称作TFT基板)和其上形成有用于进行彩色显示的CF(彩色滤色器)的相对基板(之后称作CF基板)。在TFT基板12和CF基板11之间保持有液晶层(没有示出)。
在图3中，TFT基板12从CF基板11突出，IC9和FPC13贴装在该突出区域上。IC9和FPC13通过ACF14贴装在TFT基板12的突出区域上。
图4是使用ACF14在TFT基板12的突出区域上贴装IC9的步骤的部分透视图。LCD面板10设置在压合台17上。当IC9贴装在LCD面板10的TFT基板12的突出区域上时，首先，在TFT基板12的突出区域上，将ACF14设置在其中贴装有IC9的区域上。接着，将IC9的连接面放置在ACF14上。然后，将形成在IC9上的凸起与形成在TFT基板12上的电极焊盘相对。压合工具16通过缓冲材料(没有示出)以这种结构挤压IC9的顶部。
当通过压合工具16加热并挤压ACF14时，ACF14中的绝缘树脂被软化并分散开。导电粒子也随绝缘树脂分散开，一些分散开的导电粒子保持并夹在IC9的凸起与TFT基板12的电极焊盘之间。当绝缘树脂硬化时，IC9固定在TFT基板12的突出区域上。夹在IC9的凸起与TFT基板12的电极焊盘之间的导电粒子聚集，IC9与TFT基板12电性连接。
将使用图5到8详细描述IC9的贴装结构。图5是其中贴装有IC9的TFT基板12的突出区域的部分顶视图。在图5中，在贴装IC9的区域(之后称作IC贴装区域)中的CF基板11一侧上形成多个输出配线图案19A。输出配线图案19A与TFT器件(没有示出)连接。
电极焊盘21A和21B形成在输出配线图案19A的顶部。电极焊盘线20A中的每个电极焊盘21A都与IC9的凸起线18A中的凸起1A连接。电极焊盘线20B中的每个电极焊盘21B都与IC9的凸起线18B中的凸起1B连接。电极焊盘21A和电极焊盘21B形成为分别与IC9的凸起1A和凸起1B相对。电极焊盘21A和电极焊盘21B以交错的结构设置在IC贴装区域上。
另一方面，在IC贴装区域的TFT基板12边缘侧上形成有与FPC13连接的多个输入配线图案19B。与IC9的凸起1C连接的电极焊盘21C形成在输入配线图案19B的顶部。电极焊盘21C设置成与凸起1C相对。
图6是其中在TFT基板12上贴装有IC9的显示器件的部分截面图。在图6中，与FPC13(没有示出)连接的输入配线图案19B和与TFT器件(没有示出)连接的输出配线图案19A形成在TFT基板12上。电极焊盘21C形成在输入配线图案19B的顶部，电极焊盘21A和电极焊盘21B形成在输出配线图案19A的顶部。
另一方面，在图6中，凸起1A，1B和1C形成在IC9的连接面上。凸起1A、凸起1B和凸起1C通过ACF14分别与电极焊盘21A、电极焊盘21B和电极焊盘21C连接。当IC9贴装在TFT基板12上时，将形成有凸起的IC9的表面设置于在TFT基板12上所布置的ACF14上。ACF14以这种结构被热压。当加热ACF14时，其中的绝缘树脂被软化并与导电粒子15一起从IC9的下部流向外部。
流出的一些导电粒子15俘获并夹在凸起与TFT基板12的电极焊盘之间。当夹在其间的导电粒子15聚集时，FPC13、IC9和TFT基板12通过聚集的导电粒子电性连接。当ACF14的绝缘树脂硬化时，IC9固定在TFT基板12上。
图7显示了在将IC9贴装进TFT基板12的工艺过程中、ACF14的绝缘树脂和导电粒子15在IC9上的移动。在图7中，在靠近IC9一个边缘侧，凸起线18C以单行设置。凸起线18C的凸起1C形成为使得其间的距离较长。另一方面，在靠近IC9的另一个边缘侧设置凸起线18A和凸起线18B。凸起线18A的凸起1A和凸起线18B的凸起1B以交错的结构设置，该结构具有比凸起1C的距离更短的距离。这里，在依照该典型实施例的IC9中，在设置在凸起线18B外部的凸起线18A的每个凸起1A中形成有锥形间隙2。
在图7中，在通过热压将IC9贴装在TFT基板12上的过程中，ACF14中的绝缘树脂和导电粒子15通过凸起线18C的凸起1C之间的距离从IC9的下部平滑地流向其外部。流出的一些导电粒子15被俘获并夹在凸起1C与相对的电极焊盘21C之间。当俘获的导电粒子15聚集时，IC9和与FPC13连接的输入配线图案19B电性连接。
另一方面，在热压过程中ACF14中的一部分绝缘树脂和一些导电粒子15通过凸起1B之间的距离流向凸起线18A。这里，一些导电粒子15被俘获并夹在凸起1B与相对的电极焊盘21B之间。
此外，一部分绝缘树脂和一些导电粒子15通过凸起1A之间的距离或形成在每个凸起1A中的间隙2流出IC9的下部。这里，流到凸起线18A侧的一些导电粒子15被俘获并夹在凸起1A与相对的电极焊盘21A之间。
当在凸起1B与电极焊盘21B之间的、以及凸起1A与电极焊盘21A之间的被俘获的导电粒子15聚集时，IC9和与TFT器件连接的输出配线图案19A电性连接。
进入在凸起1A中形成的间隙2的一些导电粒子15不能穿过锥形间隙2而停留在其内部。保留在间隙2中的一些导电粒子15很容易聚集在其中。当聚集的导电粒子15填充锥形间隙2，以到达凸起1A的上表面时，其中形成间隙2的凸起1A的上表面面积变为大致等于其中没有形成间隙的凸起1B或凸起1C的上表面面积。因此在凸起1A与相对的电极焊盘21A之间可保持足够的导电粒子15。由此，在具有锥形间隙2的凸起1A与电极焊盘21A之间可实现出色的电连接。此外，因为一些导电粒子15被俘获在锥形间隙2中，同时较小的导电粒子和绝缘树脂穿过其间，所以凸起1A之间以及凸起1A与1B之间聚集的导电粒子减小或者消失。
图8显示了部分透视图，其显示了导电粒子15进入并填充间隙2，从而到达其上表面区域。在图8中，不能流出间隙2的导电粒子15堆积在间隙2中。当堆积在间隙2中的导电粒子15到达间隙2中的上表面时，导电粒子15保持在凸起1A与相对TFT基板12的电极焊盘21A之间。因此，具有间隙2的凸起1A的上表面面积变为大致等于不具有间隙的凸起1B和凸起1C的上表面面积。
接下来，将参照图9A到9E和图10A到10E描述凸起的形成工艺。图9A到9E显示了具有不形成间隙2的四方柱的凸起1B和凸起1C的形成工艺。图10A到10E显示了具有间隙2和两个梯形柱的凸起1A的形成工艺。在图9A到9E和图10A到10E中，每个图的左侧都是凸起的横截面，右侧是凸起的顶视图。作为凸起的形成方法，存在许多方法，如光刻方法、电镀方法或乳酪焊剂转印方法。下面将描述使用光刻方法和电镀方法通过金(Au)形成凸起的方法。
首先，使用图9A到9E描述其中没有形成间隙2的凸起1B的形成工艺。在图9A中，在形成凸起1B的IC9的一部分上表面上形成Al焊盘3。此外，用钝化保护膜4(例如Si3N6)覆盖除形成凸起1B的区域之外的其他区域。在图9A的顶视图中，在凸起1B的形成区域中露出四方形Al焊盘3。
接着，如图9B中所示，在钝化保护膜4和Al焊盘3上沉积阻挡金属5(例如Ti，Pd，Cr，Cu)。如图9C中所示，使用光刻方法在除形成凸起1B的区域之外的其他区域上形成膜抗蚀剂6。在图9C中，在形成凸起1B的区域中形成四方形开口7。
在使用酸清洗开口7的内部之后，如图9D中所示，在开口7中形成Au电镀膜8。如图9E中所示，移除膜抗蚀剂6，然后通过蚀刻移除阻挡金属5，获得由Au形成的四方柱形1B。
接下来，将使用图10A到10E描述具有锥形间隙2的凸起1A的形成工艺。在图10A的顶视图中，在形成凸起1A和间隙2的IC9区域的一部分上表面上形成Al焊盘3。用钝化保护膜4覆盖除形成凸起1A的区域之外的其他区域。这里，钝化保护膜4也覆盖形成间隙2的区域。这种工艺阻止了其中形成间隙2的区域中的Al焊盘3在形成Au电镀膜8之后在膜抗蚀剂6的移除步骤和阻挡金属5的蚀刻移除步骤中暴露出来。在图10A中，在凸起1A的形成区域中暴露出具有两个四方形的Al焊盘3。
接着，如图10B中所示，在钝化保护膜4和Al焊盘3上沉积阻挡金属5。如图10C中所示，使用光刻方法在除形成凸起1A的区域之外的其他区域上形成膜抗蚀剂6。这里，在形成间隙2的区域上也形成膜抗蚀剂6。在图10C中，在形成凸起1A的区域上形成水平横截面为梯形的两个开口7。
在使用酸清洗开口7的内部之后，如图10D中所示，在开口7中形成Au电镀膜8。如图10E中所示，通过蚀刻移除膜抗蚀剂6，并移除阻挡金属5，获得了具有锥形间隙2的凸起1A。
在该典型实施例中，通过图9A到9E中所示的方法在IC9的连接面上形成了四方柱形凸起1B和1C。通过图10A到10E中所示的方法在IC9的连接面上形成了包括两个梯形柱和间隙2的凸起1A。凸起1A形成在IC9的连接面上，使得锥形间隙2的较短宽度的开口面对IC9的长边缘侧。这里，可同时形成凸起1A，1B和1C。
尽管在该典型实施例中凸起由金(Au)形成，但凸起也可由包含其他金属，焊料等的金的合金形成。凸起和间隙2的尺寸没有特别限定。在该典型实施例中，在图1B和图2中，凸起设为25μm宽，80μm长，15μm高。凸起1A和1B之间的距离设为23μm，凸起1C之间的距离设为100μm。凸起线18A和凸起线18B之间的距离设为20μm。锥形间隙2的长宽度设为7μm，短宽度设为3μm，因为ACF14中包含的导电粒子15的平均直径大致为4μm。宽度可根据ACF14中的导电粒子15的直径、绝缘树脂的粘度等适当设定。
在该典型实施例中，尽管凸起1A，1B和1C具有相同的外部尺寸，但凸起的外部尺寸对于每个凸起线可改变。在相同的凸起线中，每个凸起的外部尺寸可变化。
在该典型实施例中，尽管锥形间隙2仅形成在凸起线18A的凸起1A中，但间隙2也可形成在凸起线18B的凸起1B和凸起线18C的凸起1C中。
此外，形成在凸起线18A中的每个凸起1A的间隙2的形状相同。间隙2的宽度尺寸对于每个凸起1A可改变。形成在凸起线18A中心的间隙2可以具有较宽的开口，因为导电粒子15易于聚集在这里。
在该典型实施例中，形成了从凸起1A的顶表面到IC9的表面的狭缝形间隙2，凸起1A完全被分为两个部分。然而，间隙2的形状并不限于这种形状。例如，间隙2可以是深度比凸起1A的高度短的浅间隙。然后，凸起1A没有被完全分为两个部分。当在凸起1A中形成浅间隙时，在形成四方柱形凸起1A之后，形成露出间隙2的区域的抗蚀剂图案，并通过使用该抗蚀剂图案作为掩模将凸起1A蚀刻预定深度。
这里，图11显示了具有本发明基本结构的IC9的透视图。图11中所示的IC9可以与电子装置电性连接。与电子装置电性连接的一个凸起1A形成在IC9连接面的长边缘侧的中心。凸起1A被从IC9的中部延伸到边缘部的间隙2分为两部分。间隙2以所谓的锥形方式形成，其中间隙2的宽度向着IC9的边缘部逐渐降低。
当IC9通过ACF14贴装在TFT基板12上时，在如上所述的典型实施例中使用具有锥形间隙2的凸起1A。因为在贴装过程中刚刚到达凸起1A之前的较小导电粒子15通过间隙2平滑地流出IC9，且许多导电粒子15被俘获在间隙2中，所以抑制了导电粒子15聚集在凸起1A之间和凸起线之间。因此可抑制在凸起之间和凸起线之间发生短路故障。
被俘获在间隙2中的许多导电粒子15聚集在其中。当间隙2中聚集的导电粒子15到达凸起1A的上表面时，其上表面的面积大致等于不具有间隙的凸起1B的上表面面积。因此，导电粒子15很容易保持并夹在凸起1A与TFT基板的电极焊盘之间。因此，在IC9与TFT基板12之间可实现出色的电连接。
2.第二典型实施例
接下来，将描述第二典型实施例。图12A是依照该典型实施例的器件的凸起1D的透视图。图12B是凸起1D的顶视图，图12C是凸起1D的底视图。图12D是凸起1D的左侧视图，图12E是凸起1D的右侧视图。
在第一典型实施例中，在凸起1A中形成了宽度向着IC9的边缘侧逐渐降低的锥形间隙2。对比地，在第二典型实施例中，如图12A到12E中所示，间隙2B向着IC9的边缘侧变细并从1D的底部向着1D的上表面变细。
在图12A和12E中，在远离IC9边缘侧的一侧的垂直方向上的间隙2B的宽度从凸起1D的底部向着上表面逐渐降低。当比较图12B和图12C时，尽管图12B和12C中梯形间隙2B的上底的长度相等，但图12C中的下底长于图12B中的下底。这里，在图12B中，间隙2B中水平横截面形状的梯形的上底的长度理想地是短于导电粒子15的平均直径。
通过将在远离IC9边缘侧的一侧处的间隙2B的宽度设为从凸起1D的底部向着上表面逐渐降低，进入间隙2B内部的ACF14易于向上流动。因此，ACF14很容易进入间隙2B。另一方面，因为梯形上底的长度短于导电粒子15的平均直径，所以进入间隙2B的许多导电粒子15不能逃逸到上方向，而密集地聚集在间隙2B内部。密集聚集的导电粒子15从间隙2的上表面溢出，到达TFT基板的电极，从而在IC9与TFT基板之间实现出色的连接。
通过形成下述间隙2B，即间隙2B在远离IC9边缘侧的一侧的垂直方向上的宽度从凸起1D的底部向着上表面逐渐降低，可抑制在凸起之间和在凸起线之间发生短路故障。此外，可给IC9和TFT基板实现较好的电连接。
依照第二典型实施例的凸起1D的形成工艺几乎与依照第一典型实施例的凸起1A的相同。就是说，在形成凸起1D和间隙2B的区域中形成Al焊盘3，用钝化保护膜4覆盖除形成凸起1D的区域之外的其他区域。然后在钝化保护膜4和Al焊盘3上沉积阻挡金属5。
此外，在除形成凸起1D的区域之外的其他区域中形成膜抗蚀剂6。这里，在依照第二典型实施例的凸起1D的形成工艺中，在对应于间隙2B的区域中形成水平横截面为楔形的膜抗蚀剂6。膜抗蚀剂6的楔形横截面的较大宽度的部分向着其垂直上部变窄。
在膜抗蚀剂6的开口7内形成Au电镀膜8，并移除膜抗蚀剂6和阻挡金属5。因而，形成了具有图12A到12E中所示的间隙2B的凸起1D。间隙2B具有锥形的横截面形状，且在锥形形状较大宽度的部分的垂直方向上的宽度从凸起1D的底部向着上表面变窄。凸起1D形成在IC9的连接面上，使得锥形间隙2的窄侧面对IC9的长边缘侧。
图13A到13E显示了第二典型实施例的修改例。图13A是凸起1E的透视图。图13B是凸起1E的顶视图，图13C是其底视图。图13D是凸起1E的左侧视图，图13E是其右侧视图。在图12A到12E所示的凸起1D中，间隙2B形成为使得锥形形状的较大宽度部分在垂直方向上从凸起1D的底部向着上表面变窄。另一方面，图13A到13E中所示的凸起1E中的间隙2C形成为使得出现在包括其上表面的凸起1E的三个面上的间隙2C的开口宽度变细。
在图13A到13E所示的间隙2C中，进入间隙2C的导电粒子15很容易流出，且很难聚集到足够到达间隙2C的顶部。因此，理想地是在容易产生短路故障的情形中使用凸起1E。
3.第三典型实施例
将描述本发明的第三典型实施例。图14是在将依照本发明第三典型实施例的IC9贴装到基板的过程中IC9的连接面的部分顶视图。在IC9上形成有包含具有间隙2D的多个凸起1F的凸起线18D和包含每个都具有四方形横截面的多个凸起1G的凸起线18E。
如图14中所示，相对于凸起1F的四方形横截面来说，以大致V形的形式在每个凸起1F中形成间隙2D。间隙2D包括这样的两部分，该两部分在凸起1F中从邻接于两侧的凸起1F的一侧延伸到彼此相对的两侧。这里，间隙2D的两部分中的至少一个向着IC9的边缘侧变细。
通过在凸起线18D的每个凸起1F中形成V形间隙2D，位于凸起线18D与凸起线18E之间的ACF14很容易移动到凸起线18D的凸起1F之间的区域。通过形成V形间隙2D，减小了在凸起1F的上表面区域上由间隙2D占据的面积。因此，凸起1F具有足够的上表面面积来俘获导电粒子15。因为间隙2D每部分的宽度向着IC9的边缘变细，所以可有效地俘获并聚集导电粒子15。
具有V形间隙2D的凸起1F的形成工艺几乎与依照第一和第二典型实施例的凸起1A和1D的相同。在该典型实施例中，形成膜抗蚀剂6，使得在形成膜抗蚀剂6的过程中开口7变为V形。此外，间隙2D的两部分中的每一个可都形成为浅的形式，从而间隙2D不达到凸起1F的底部。
即使在凸起1F中形成V形间隙2D，ACF14仍能在凸起1F之间流动，且用于俘获导电粒子15的上表面面积不会显著降低。导电粒子15可有效聚集在间隙2D中，因为间隙2D的两部分中的至少一个向着IC9的边缘变细。
图15中显示了第三典型实施例的修改例。在图15中，在IC9上形成了包含具有间隙2E的多个凸起1H的凸起线18F和包含每个都具有四方形横截面的多个凸起1I的凸起线18G。在图15中，在凸起线18F的每个凸起1H中形成了一个斜线状间隙2E。间隙2E从凸起1H的一侧延伸到其相邻的一侧。间隙2E的宽度向着IC9的边缘变细。理想地，在热压过程中ACF14的软化绝缘树脂可以平滑流动通过的区域中形成具有间隙2E的凸起1H。
4.第四典型实施例
接下来，将描述本发明的其他典型实施例。图16A是依照第四典型实施例的凸起1J的透视图。图16B是凸起1J的顶视图，图16C是凸起1J的右侧视图。在图16A到16C中，凸起1J中的间隙2F以阶梯的形式变细。
进入阶梯形间隙2F的导电粒子15易于保留在间隙2F中的阶梯部分处。因而导电粒子15易于聚集在间隙2F内，聚集的导电粒子15很容易填充间隙2F，从而到达其表面。因此，可在器件之间实现出色的连接。
5.第五典型实施例
图17A是依照第五典型实施例的凸起1K的透视图。图17B是凸起1K的顶视图，图17C是凸起1K的右侧视图。在图17A到17C中，在凸起1K中形成具有弯曲内壁的间隙2G。
在图17中所示的凸起1K中，ACF14的绝缘树脂和导电粒子15可有效被引入间隙2G中。因此，可抑制在凸起之间和凸起线之间发生短路故障。
此外，尽管在上述典型实施例中描述了IC，但，本发明还可用于具有多个作为与不同器件连接的终端的凸起的任意器件。可使用采用有源矩阵的反射型LCD面板作为LCD器件。LCD面板的驱动***和TFT的结构是不同的。
此外，尽管描述了依照本发明的凸起用于COG贴装，但并不限于COG贴装。其可用于使用ACF贴装，并可用于其中在柔性基板上贴装半导体器件的COF贴装。
尽管作为显示器件描述了LCD器件，但本发明还可用于像等离子体显示器和有机EL(电致发光)显示器这样的显示器件。此外，本发明可用于其中通过ACF贴装具有凸起的器件的一般电子装置。
如上所述，从ACF流出的绝缘树脂和导电粒子穿过间隙，并通过在器件边缘侧中布置的凸起中形成锥形间隙而平滑地流动。因为导电粒子不会聚集在凸起和凸起线之间，所以可抑制在凸起和凸起线之间发生短路故障。
另一方面，因为间隙形成为锥形，且其宽度在ACF的绝缘树脂和导电粒子流过的方向上变细，所以进入间隙的部分导电粒子不能穿过间隙并停留中。停留在间隙中的导电粒子聚集在其中，当到达聚集导电粒子的间隙的上表面时，聚集的导电粒子被挤压并保持在凸起和相对电极之间。由此，电极焊盘和IC的凸起电性连接。同时，当ACF硬化时，器件固定在电子装置上。
当使用背景技术中所述的现有技术的凸起结构在电子装置上贴装IC9时，会发生下面的问题。就是说，当凸起的横截面形状为椭圆形时，椭圆形凸起的上表面面积小于具有四方形横截面形状的凸起的上表面面积。当凸起的上表面面积较小时，当在电子装置上贴装IC9时，在凸起和电子装置的相对电极之间俘获的导电粒子的数量减小。因此，在IC9和电子装置之间会发生电连续缺陷。
另一方面，当以下述椭圆形形状形成凸起，即该椭圆形形状具有等于四方形凸起的上表面面积的上表面面积时，椭圆形凸起的尺寸变大。因此，为了形成预定数量的椭圆形凸起，必须使凸起之间的距离或凸起线之间的距离较短，并使IC9的连接面的区域较宽。当凸起之间的距离或凸起线之间的距离较短时，很容易产生短路故障。当IC9的连接面的区域较大时，IC9的小型化变得比较困难。
与上述问题相反，为了在电子装置上贴装IC，当使用依照本发明的具有锥形间隙的凸起时，获得了下面典型的有利效果。就是说，抑制了短路故障，并在器件之间获得了出色的传导。因此，通过使用具有锥形间隙的凸起，可提供具有以较窄间距形成的凸起的小型器件。此外，通过在电子装置上以较高的密度贴装依照本发明的小型器件时，可提供小尺寸、高质量和高可靠性的电子装置。
尽管参照典型实施例特别显示和描述了本发明，但本发明并不限于这些典型实施例。本领域普通技术人员应当理解，在不脱离由权利要求定义的本发明的精神和范围的情况下，可在形式和细节上进行各种变化。
此外，本发明人的意图是保留如权利要求书所要求的发明的所有等效形式，即使在申请过程中修改权利要求。

Claims (22)

1.一种设置在器件上的电极，包括：
向着所述器件的边缘变细的间隙，其中从所述电极的端部到其不同的端部形成所述间隙。
2.根据权利要求1所述的电极，其中所述间隙将电极完全分为两部分。
3.根据权利要求1所述的电极，其中所述间隙向着所述电极的顶面变细。
4.根据权利要求1所述的电极，其中所述电极是突出的，并且其中从所述电极的第一侧面上的所述端部到其第二侧面上的所述不同端部形成所述间隙。
5.根据权利要求4所述的电极，其中所述第一侧面和所述第二侧面是相对的。
6.根据权利要求4所述的电极，其中所述第一侧面和所述第二侧面是相邻的。
7.根据权利要求6所述的电极，其中所述电极包括另一个间隙，该间隙向着所述器件的边缘变细，并且从所述电极的所述第一侧面上的端部到在其第三侧面上的不同端部形成该间隙，以及
其中所述第一侧面和所述第三侧面是相邻的，所述第二侧面和所述第三侧面是相对的。
8.根据权利要求1所述的电极，其中所述间隙的所述宽度以阶梯的方式变细。
9.根据权利要求1所述的电极，其中所述间隙的所述侧面以弯曲的方式变细。
10.一种设置在器件上的电极，用于通过包含导电粒子和树脂的各向异性导电膜与电子装置电性连接，所述电极包括：
从所述电极的上部形成的间隙，其中通过加热而软化的一部分所述树脂流过所述间隙，并且其中所述间隙在所述树脂流过的方向上变细。
11.根据权利要求10所述的电极，其中所述间隙的一部分的宽度比所述导电粒子的平均直径窄。
12.根据权利要求10所述的电极，其中所述各向异性导电膜将所述器件和所述电子装置粘结。
13.一种器件，包括：
设置在其上的多个电极，至少一个所述电极具有间隙，
其中所述间隙向着所述器件的边缘变细，并且其中从所述电极的端部到其不同的端部形成所述间隙。
14.根据权利要求13所述的器件，其中至少一部分所述电极以交错的结构设置，并且至少一部分具有所述间隙的所述电极设置在所述器件的边缘侧上。
15.一种器件，包括：
设置在其上的多个电极，所述电极通过包含导电粒子和树脂的各向异性导电膜连接所述器件和电子装置，
其中至少一个所述电极包括从所述电极的上部形成的间隙，
其中通过加热而软化的一部分所述树脂流过所述间隙，并且
其中所述间隙在所述树脂流过的方向上变细。
16.根据权利要求15所述的器件，其中所述间隙的一部分的宽度比所述导电粒子的平均直径窄。
17.根据权利要求15所述的器件，其中所述各向异性导电膜将所述器件和所述电子装置粘结。
18.根据权利要求15所述的器件，其中至少一部分所述电极以交错的结构设置，并且至少一部分具有所述间隙的所述电极设置在所述器件的边缘侧上。
19.一种电子装置，包括：导电部；以及器件，该器件包括多个电极，该多个电极通过包含导电粒子和树脂的各向异性导电膜与所述导电部电性连接，其中至少一个所述电极具有从所述电极的上部形成的间隙，并且其中通过加热而软化的一部分所述树脂流过所述间隙，并且其中所述间隙在所述树脂流过的方向上变细。
20.根据权利要求19所述的电子装置，其中至少一个所述间隙被所述导电粒子填充至所述间隙的上部。
21.根据权利要求19所述的电子装置，其中所述各向异性导电膜将所述器件和所述电子器件粘结。
22.根据权利要求19所述的电子装置，其中所述电子器件是液晶显示器件，所述液晶显示器件包括一对在其之间具有液晶层的基板，其中所述导电部形成在至少一个所述基板上。
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