CN101123271A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN101123271A CN101123271A CNA2006100300158A CN200610030015A CN101123271A CN 101123271 A CN101123271 A CN 101123271A CN A2006100300158 A CNA2006100300158 A CN A2006100300158A CN 200610030015 A CN200610030015 A CN 200610030015A CN 101123271 A CN101123271 A CN 101123271A
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- metal
- silicide
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Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 118
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910052751 metal Inorganic materials 0.000 claims abstract description 105
- 239000002184 metal Substances 0.000 claims abstract description 105
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 46
- 239000010941 cobalt Substances 0.000 claims abstract description 46
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 33
- 229910052759 nickel Inorganic materials 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 238000004151 rapid thermal annealing Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000005275 alloying Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910021334 nickel silicide Inorganic materials 0.000 abstract description 16
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 abstract description 15
- 230000008901 benefit Effects 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 235000013495 cobalt Nutrition 0.000 description 39
- 238000005516 engineering process Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000004873 anchoring Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WUNIMIODOAGQAW-UHFFFAOYSA-N [O-2].[Ba+2].[Ti+4] Chemical compound [O-2].[Ba+2].[Ti+4] WUNIMIODOAGQAW-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- JIMUOUDLWPNFAY-UHFFFAOYSA-N [Si]=O.[Hf].[N] Chemical compound [Si]=O.[Hf].[N] JIMUOUDLWPNFAY-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
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CNB2006100300158A CN100449784C (zh) | 2006-08-11 | 2006-08-11 | 半导体器件及其制造方法 |
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CNB2006100300158A CN100449784C (zh) | 2006-08-11 | 2006-08-11 | 半导体器件及其制造方法 |
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CN101123271A true CN101123271A (zh) | 2008-02-13 |
CN100449784C CN100449784C (zh) | 2009-01-07 |
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Cited By (12)
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CN102522327A (zh) * | 2011-12-22 | 2012-06-27 | 上海华虹Nec电子有限公司 | 自对准低电阻栅极rf ldmos的制造方法 |
CN102983163A (zh) * | 2011-09-07 | 2013-03-20 | 中国科学院微电子研究所 | 低源漏接触电阻MOSFETs及其制造方法 |
CN103000528A (zh) * | 2011-09-16 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 具有硅化镍接触区的半导体结构及形成方法 |
CN103022106A (zh) * | 2011-09-22 | 2013-04-03 | 三星电子株式会社 | 包括石墨烯的电极结构以及具有其的场效应晶体管 |
CN103065965A (zh) * | 2011-10-20 | 2013-04-24 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN103137449A (zh) * | 2011-12-01 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | 栅极的制作方法、晶体管的制作方法 |
CN103456615A (zh) * | 2013-09-02 | 2013-12-18 | 上海华力微电子有限公司 | 改善金属硅化物掩模层缺陷的方法 |
CN103915326A (zh) * | 2013-01-08 | 2014-07-09 | 中芯国际集成电路制造(上海)有限公司 | 自对准金属硅化物的形成方法和半导体器件 |
WO2016169162A1 (zh) * | 2015-04-24 | 2016-10-27 | 京东方科技集团股份有限公司 | 一种制作阵列基板的方法及其阵列基板和显示装置 |
CN109585301A (zh) * | 2014-10-22 | 2019-04-05 | 意法半导体公司 | 用于包括具有低接触电阻的衬垫硅化物的集成电路制作的工艺 |
CN112820778A (zh) * | 2021-03-29 | 2021-05-18 | 厦门芯一代集成电路有限公司 | 一种新型的高压vdmos器件及其制备方法 |
CN113629009A (zh) * | 2021-08-09 | 2021-11-09 | 长鑫存储技术有限公司 | 半导体硅化钴膜层的制造方法、半导体器件及存储器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6136636A (en) * | 1998-03-25 | 2000-10-24 | Texas Instruments - Acer Incorporated | Method of manufacturing deep sub-micron CMOS transistors |
CN1453837A (zh) * | 2002-04-24 | 2003-11-05 | 华邦电子股份有限公司 | 自行对准金属硅化物的制造方法 |
US6846734B2 (en) * | 2002-11-20 | 2005-01-25 | International Business Machines Corporation | Method and process to make multiple-threshold metal gates CMOS technology |
CN1285102C (zh) * | 2003-06-12 | 2006-11-15 | 台湾积体电路制造股份有限公司 | 金属硅化双层结构及其形成方法 |
-
2006
- 2006-08-11 CN CNB2006100300158A patent/CN100449784C/zh active Active
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102983163A (zh) * | 2011-09-07 | 2013-03-20 | 中国科学院微电子研究所 | 低源漏接触电阻MOSFETs及其制造方法 |
CN102983163B (zh) * | 2011-09-07 | 2016-04-20 | 中国科学院微电子研究所 | 低源漏接触电阻MOSFETs及其制造方法 |
CN103000528B (zh) * | 2011-09-16 | 2015-12-16 | 中芯国际集成电路制造(上海)有限公司 | 具有硅化镍接触区的半导体结构及形成方法 |
CN103000528A (zh) * | 2011-09-16 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 具有硅化镍接触区的半导体结构及形成方法 |
CN103022106A (zh) * | 2011-09-22 | 2013-04-03 | 三星电子株式会社 | 包括石墨烯的电极结构以及具有其的场效应晶体管 |
CN103022106B (zh) * | 2011-09-22 | 2018-04-20 | 三星电子株式会社 | 包括石墨烯的电极结构以及具有其的场效应晶体管 |
CN103065965A (zh) * | 2011-10-20 | 2013-04-24 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN103065965B (zh) * | 2011-10-20 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN103137449A (zh) * | 2011-12-01 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | 栅极的制作方法、晶体管的制作方法 |
CN103137449B (zh) * | 2011-12-01 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | 栅极的制作方法、晶体管的制作方法 |
CN102522327A (zh) * | 2011-12-22 | 2012-06-27 | 上海华虹Nec电子有限公司 | 自对准低电阻栅极rf ldmos的制造方法 |
CN103915326A (zh) * | 2013-01-08 | 2014-07-09 | 中芯国际集成电路制造(上海)有限公司 | 自对准金属硅化物的形成方法和半导体器件 |
CN103456615A (zh) * | 2013-09-02 | 2013-12-18 | 上海华力微电子有限公司 | 改善金属硅化物掩模层缺陷的方法 |
CN103456615B (zh) * | 2013-09-02 | 2016-04-27 | 上海华力微电子有限公司 | 改善金属硅化物掩模层缺陷的方法 |
CN109585301A (zh) * | 2014-10-22 | 2019-04-05 | 意法半导体公司 | 用于包括具有低接触电阻的衬垫硅化物的集成电路制作的工艺 |
CN109585301B (zh) * | 2014-10-22 | 2022-01-04 | 意法半导体公司 | 一种具有低接触电阻衬垫硅化物的集成电路及其制作方法 |
WO2016169162A1 (zh) * | 2015-04-24 | 2016-10-27 | 京东方科技集团股份有限公司 | 一种制作阵列基板的方法及其阵列基板和显示装置 |
US9905434B2 (en) | 2015-04-24 | 2018-02-27 | Boe Technology Group Co., Ltd. | Method for fabricating array substrate, array substrate and display device |
CN112820778A (zh) * | 2021-03-29 | 2021-05-18 | 厦门芯一代集成电路有限公司 | 一种新型的高压vdmos器件及其制备方法 |
CN113629009A (zh) * | 2021-08-09 | 2021-11-09 | 长鑫存储技术有限公司 | 半导体硅化钴膜层的制造方法、半导体器件及存储器 |
CN113629009B (zh) * | 2021-08-09 | 2023-10-24 | 长鑫存储技术有限公司 | 半导体硅化钴膜层的制造方法、半导体器件及存储器 |
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Publication number | Publication date |
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CN100449784C (zh) | 2009-01-07 |
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