CN101044605A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN101044605A CN101044605A CNA2004800441992A CN200480044199A CN101044605A CN 101044605 A CN101044605 A CN 101044605A CN A2004800441992 A CNA2004800441992 A CN A2004800441992A CN 200480044199 A CN200480044199 A CN 200480044199A CN 101044605 A CN101044605 A CN 101044605A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims description 93
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 142
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 141
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 141
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 67
- 239000003054 catalyst Substances 0.000 claims abstract description 60
- 239000011229 interlayer Substances 0.000 claims abstract description 51
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- 150000002739 metals Chemical class 0.000 claims description 57
- 238000009826 distribution Methods 0.000 claims description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 230000005669 field effect Effects 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 230000005764 inhibitory process Effects 0.000 claims description 6
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NJFMNPFATSYWHB-UHFFFAOYSA-N ac1l9hgr Chemical compound [Fe].[Fe] NJFMNPFATSYWHB-UHFFFAOYSA-N 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
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- 238000011065 in-situ storage Methods 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
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- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L2221/1094—Conducting structures comprising nanotubes or nanowires
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (37)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/015732 WO2006043329A1 (ja) | 2004-10-22 | 2004-10-22 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101044605A true CN101044605A (zh) | 2007-09-26 |
CN100539041C CN100539041C (zh) | 2009-09-09 |
Family
ID=36202754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800441992A Expired - Fee Related CN100539041C (zh) | 2004-10-22 | 2004-10-22 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7700978B2 (zh) |
JP (1) | JP5045103B2 (zh) |
CN (1) | CN100539041C (zh) |
WO (1) | WO2006043329A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101852763A (zh) * | 2010-05-07 | 2010-10-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种基于场效应晶体管的手性传感器及其制备方法 |
CN101923065A (zh) * | 2010-07-13 | 2010-12-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场效应晶体管手性传感器及其制备方法 |
CN102986014A (zh) * | 2010-07-07 | 2013-03-20 | 国际商业机器公司 | 通过三维集成技术制造高性能碳纳米管晶体管集成电路的方法 |
CN102044524B (zh) * | 2009-10-13 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其形成方法 |
CN112838050A (zh) * | 2021-02-05 | 2021-05-25 | 泉芯集成电路制造(济南)有限公司 | 一种半导体器件及其制备方法 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7989349B2 (en) | 2005-04-15 | 2011-08-02 | Micron Technology, Inc. | Methods of manufacturing nanotubes having controlled characteristics |
US7884359B2 (en) * | 2006-06-09 | 2011-02-08 | The United States Of America As Represented By The Secretary Of The Navy | Integrally gated carbon nanotube ionizer device |
JP4899703B2 (ja) * | 2006-08-07 | 2012-03-21 | 富士通株式会社 | カーボン配線構造およびその製造方法、および半導体装置 |
JP5055929B2 (ja) * | 2006-09-29 | 2012-10-24 | 富士通株式会社 | 電子デバイスの製造方法 |
FR2910706B1 (fr) * | 2006-12-21 | 2009-03-20 | Commissariat Energie Atomique | Element d'interconnexion a base de nanotubes de carbone |
US8101529B2 (en) * | 2007-02-15 | 2012-01-24 | Nec Corporation | Carbon nanotube resistor, semiconductor device, and manufacturing method thereof |
JP5194513B2 (ja) * | 2007-03-29 | 2013-05-08 | 富士通セミコンダクター株式会社 | 配線構造及びその形成方法 |
JP5181512B2 (ja) | 2007-03-30 | 2013-04-10 | 富士通セミコンダクター株式会社 | 電子デバイスの製造方法 |
JP5168984B2 (ja) * | 2007-03-30 | 2013-03-27 | 富士通株式会社 | カーボンナノチューブ金属複合材料によるデバイス構造 |
JP5233147B2 (ja) * | 2007-03-30 | 2013-07-10 | 富士通セミコンダクター株式会社 | 電子デバイス及びその製造方法 |
WO2009023304A2 (en) * | 2007-05-02 | 2009-02-19 | Atomate Corporation | High density nanotube devices |
FR2917893B1 (fr) * | 2007-06-22 | 2009-08-28 | Commissariat Energie Atomique | Procede de fabrication d'une connexion electrique a base de nanotubes de carbone |
FR2920252A1 (fr) * | 2007-08-24 | 2009-02-27 | Commissariat Energie Atomique | Procede de realisation d'un transistor comportant une connexion electrique a base de nanotubes ou de nanofils. |
US7911234B1 (en) * | 2007-09-28 | 2011-03-22 | The Board Of Trustees Of The Leland Stanford Junior University | Nanotube logic circuits |
FR2925761B1 (fr) * | 2007-12-20 | 2010-08-20 | Commissariat Energie Atomique | Procede de realisation d'une connexion electrique, a base de nanotubes, entre deux surfaces en regard et circuit integre la comportant |
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2004
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CN101852763A (zh) * | 2010-05-07 | 2010-10-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种基于场效应晶体管的手性传感器及其制备方法 |
CN101852763B (zh) * | 2010-05-07 | 2013-06-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种基于场效应晶体管的手性传感器及其制备方法 |
CN102986014A (zh) * | 2010-07-07 | 2013-03-20 | 国际商业机器公司 | 通过三维集成技术制造高性能碳纳米管晶体管集成电路的方法 |
CN102986014B (zh) * | 2010-07-07 | 2015-08-05 | 国际商业机器公司 | 通过三维集成技术制造高性能碳纳米管晶体管集成电路的方法 |
CN101923065A (zh) * | 2010-07-13 | 2010-12-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场效应晶体管手性传感器及其制备方法 |
CN101923065B (zh) * | 2010-07-13 | 2013-05-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场效应晶体管手性传感器及其制备方法 |
CN112838050A (zh) * | 2021-02-05 | 2021-05-25 | 泉芯集成电路制造(济南)有限公司 | 一种半导体器件及其制备方法 |
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US8034676B2 (en) | 2011-10-11 |
WO2006043329A1 (ja) | 2006-04-27 |
US7700978B2 (en) | 2010-04-20 |
US20100144104A1 (en) | 2010-06-10 |
CN100539041C (zh) | 2009-09-09 |
US20070205450A1 (en) | 2007-09-06 |
JPWO2006043329A1 (ja) | 2008-05-22 |
JP5045103B2 (ja) | 2012-10-10 |
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