CN101043784B - 混合等离子体反应器 - Google Patents

混合等离子体反应器 Download PDF

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Publication number
CN101043784B
CN101043784B CN2007100868758A CN200710086875A CN101043784B CN 101043784 B CN101043784 B CN 101043784B CN 2007100868758 A CN2007100868758 A CN 2007100868758A CN 200710086875 A CN200710086875 A CN 200710086875A CN 101043784 B CN101043784 B CN 101043784B
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China
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power
frequency
source current
negative electrode
unit
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Expired - Fee Related
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CN2007100868758A
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Chinese (zh)
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CN101043784A (zh
Inventor
李元默
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Weihai dianmei Shiguang electromechanical Co Ltd
DMS Co Ltd
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Display Manufacturing Services Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
CN2007100868758A 2006-03-21 2007-03-21 混合等离子体反应器 Expired - Fee Related CN101043784B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2006-0025663 2006-03-21
KR1020060025663 2006-03-21
KR1020060025663A KR100777151B1 (ko) 2006-03-21 2006-03-21 하이브리드형 플라즈마 반응장치

Publications (2)

Publication Number Publication Date
CN101043784A CN101043784A (zh) 2007-09-26
CN101043784B true CN101043784B (zh) 2011-01-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007100868758A Expired - Fee Related CN101043784B (zh) 2006-03-21 2007-03-21 混合等离子体反应器

Country Status (4)

Country Link
US (1) US20070221331A1 (ko)
KR (1) KR100777151B1 (ko)
CN (1) CN101043784B (ko)
TW (1) TWI346359B (ko)

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KR100892249B1 (ko) * 2007-11-21 2009-04-09 주식회사 디엠에스 플라즈마 반응장치
EP2122657B8 (en) 2008-03-20 2011-06-22 Ruhr-Universität Bochum Method for controlling ion energy in radio frequency plasmas
US8760431B2 (en) * 2008-07-17 2014-06-24 Samsung Display Co., Ltd. Display apparatus
US8414736B2 (en) * 2009-09-03 2013-04-09 Applied Materials, Inc. Plasma reactor with tiltable overhead RF inductive source
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
JP5800532B2 (ja) * 2011-03-03 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101225544B1 (ko) * 2011-03-24 2013-01-23 주식회사 디엠에스 하이브리드 플라즈마 소스와 정전척 히터를 이용한 멀티 스택 레이어 마스크 구조의 산화막 식각방법
US8652298B2 (en) * 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
CN103426807B (zh) * 2012-05-18 2016-04-13 中国地质大学（北京） 一种配置取放装置和调节工件的位置的半导体刻蚀装置
CN103854945A (zh) * 2012-12-05 2014-06-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体设备及其反应腔室
CN104754850B (zh) * 2013-12-31 2019-11-05 中微半导体设备(上海)股份有限公司 一种电感耦合型等离子处理器
CN104862671B (zh) 2014-02-24 2019-08-23 北京北方华创微电子装备有限公司 一种反应腔室及等离子体加工设备
GB201502453D0 (en) * 2015-02-13 2015-04-01 Spts Technologies Ltd Plasma producing apparatus
KR101874802B1 (ko) * 2016-04-19 2018-07-05 피에스케이 주식회사 플라스마 소스 및 이를 포함하는 기판 처리 장치
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
WO2018148189A1 (en) * 2017-02-10 2018-08-16 Applied Materials, Inc. Method and apparatus for low temperature selective epitaxy in a deep trench
CN107256822B (zh) * 2017-07-27 2019-08-23 北京北方华创微电子装备有限公司 上电极组件及反应腔室
US10784091B2 (en) 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
CN108093551B (zh) * 2017-12-20 2020-03-13 西安交通大学 用于激励产生均匀放电高活性等离子体的复合电源装置
TWI697261B (zh) * 2018-05-22 2020-06-21 呈睿國際股份有限公司 感應耦合電漿蝕刻系統及其切換式匹配裝置
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
CN112805920A (zh) 2018-08-10 2021-05-14 鹰港科技有限公司 用于rf等离子体反应器的等离子体鞘控制
EP3994716A4 (en) * 2019-07-02 2023-06-28 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation
JP7285377B2 (ja) 2019-12-24 2023-06-01 イーグル ハーバー テクノロジーズ，インク． プラズマシステム用ナノ秒パルサｒｆ絶縁
CN110888380B (zh) * 2019-12-25 2021-11-16 北京北方华创微电子装备有限公司 一种半导体设备中滤波电路的控制方法和半导体设备
CN111192812B (zh) * 2020-01-07 2022-11-25 北京北方华创微电子装备有限公司 电感耦合装置和半导体处理设备
KR102482734B1 (ko) * 2020-11-13 2022-12-30 충남대학교산학협력단 고주파 펄스 소스 및 저주파 펄스 바이어스를 이용한 플라즈마 극고종횡비 식각 방법
CN113113282B (zh) * 2021-04-01 2023-11-14 北京北方华创微电子装备有限公司 上电极电源功率调节方法、半导体工艺设备
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
WO2023042857A1 (ja) * 2021-09-15 2023-03-23 東京エレクトロン株式会社 プラズマ処理装置
TWI801058B (zh) * 2021-12-23 2023-05-01 明遠精密科技股份有限公司 一種複合式電漿源及其運作方法

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US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
EP0641150A1 (en) * 1992-05-13 1995-03-01 OHMI, Tadahiro Process apparatus
US20030094239A1 (en) * 2000-06-02 2003-05-22 Quon Bill H. Apparatus and method for improving electron ecceleration
US20040222189A1 (en) * 2001-06-29 2004-11-11 Lam Research Corporation Apparatus and method for radio frequency decoupling and bias voltage control in a plasma reactor
US20030077910A1 (en) * 2001-10-22 2003-04-24 Russell Westerman Etching of thin damage sensitive layers using high frequency pulsed plasma
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
WO2004008816A2 (fr) * 2002-07-11 2004-01-22 Alcatel Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance
CN1575089A (zh) * 2003-06-12 2005-02-02 三星电子株式会社 等离子箱体

Also Published As

Publication number Publication date
CN101043784A (zh) 2007-09-26
TW200739723A (en) 2007-10-16
US20070221331A1 (en) 2007-09-27
KR100777151B1 (ko) 2007-11-16
TWI346359B (en) 2011-08-01
KR20070096205A (ko) 2007-10-02

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