CN101032014A - 用于微电子和微***的新结构以及制造方法 - Google Patents
用于微电子和微***的新结构以及制造方法 Download PDFInfo
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- CN101032014A CN101032014A CNA200580033080XA CN200580033080A CN101032014A CN 101032014 A CN101032014 A CN 101032014A CN A200580033080X A CNA200580033080X A CN A200580033080XA CN 200580033080 A CN200580033080 A CN 200580033080A CN 101032014 A CN101032014 A CN 101032014A
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000004377 microelectronic Methods 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims abstract description 200
- 238000000034 method Methods 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 40
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 235000012431 wafers Nutrition 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 239000000696 magnetic material Substances 0.000 claims description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 230000005662 electromechanics Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims 2
- 239000000615 nonconductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 133
- 239000002344 surface layer Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000003486 chemical etching Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 208000002925 dental caries Diseases 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000011265 semifinished product Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000004873 anchoring Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000001195 anabolic effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- ZERVJPYNQLONEK-UHFFFAOYSA-N canthin-6-one Chemical compound C12=CC=CC=C2N2C(=O)C=CC3=NC=CC1=C32 ZERVJPYNQLONEK-UHFFFAOYSA-N 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00595—Control etch selectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Micromachines (AREA)
- Laminated Bodies (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Weting (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Silicon Polymers (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
化学蚀刻液 | ||||
TMAH 25%80℃ | HF 5%20℃ | HF 50%20℃ | H3PO4160℃ | |
Si | ~500nm/min | <0.5nm/min | <1nm/min | ~0.2nm/min |
SiO2 | <0.5nm/min | 20-40nm/min | ~500nm/min | <0.1nm/min |
Si3N4 | <0.5nm/min | ~0.8nm/min | <20nm/min | ~5nm/min |
Claims (40)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0452217A FR2875947B1 (fr) | 2004-09-30 | 2004-09-30 | Nouvelle structure pour microelectronique et microsysteme et procede de realisation |
FR0452217 | 2004-09-30 | ||
US60/673,801 | 2005-04-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210058695XA Division CN102637626A (zh) | 2004-09-30 | 2005-09-27 | 用于微电子和微***的结构的制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101032014A true CN101032014A (zh) | 2007-09-05 |
Family
ID=34952707
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA200580033080XA Pending CN101032014A (zh) | 2004-09-30 | 2005-09-27 | 用于微电子和微***的新结构以及制造方法 |
CN201210058695XA Pending CN102637626A (zh) | 2004-09-30 | 2005-09-27 | 用于微电子和微***的结构的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210058695XA Pending CN102637626A (zh) | 2004-09-30 | 2005-09-27 | 用于微电子和微***的结构的制造方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US20080036039A1 (zh) |
EP (1) | EP1794789B1 (zh) |
JP (3) | JP2008514441A (zh) |
KR (1) | KR100860546B1 (zh) |
CN (2) | CN101032014A (zh) |
AT (1) | ATE492029T1 (zh) |
DE (1) | DE602005025375D1 (zh) |
FR (1) | FR2875947B1 (zh) |
WO (1) | WO2006035031A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104756233A (zh) * | 2012-10-22 | 2015-07-01 | 夏普株式会社 | 半导体器件的制造方法 |
CN104944361B (zh) * | 2014-03-25 | 2016-05-18 | 中芯国际集成电路制造(北京)有限公司 | 一种mems器件的制作方法 |
CN105895575A (zh) * | 2016-05-09 | 2016-08-24 | 中国科学院上海微***与信息技术研究所 | 一种图形化绝缘体上硅衬底材料及其制备方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2876220B1 (fr) * | 2004-10-06 | 2007-09-28 | Commissariat Energie Atomique | Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees. |
US20060276008A1 (en) * | 2005-06-02 | 2006-12-07 | Vesa-Pekka Lempinen | Thinning |
FR2897982B1 (fr) * | 2006-02-27 | 2008-07-11 | Tracit Technologies Sa | Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat |
FR2932789B1 (fr) | 2008-06-23 | 2011-04-15 | Commissariat Energie Atomique | Procede de fabrication d'une structure electromecanique comportant au moins un pilier de renfort mecanique. |
FR2932788A1 (fr) | 2008-06-23 | 2009-12-25 | Commissariat Energie Atomique | Procede de fabrication d'un composant electromecanique mems / nems. |
FR2932923B1 (fr) | 2008-06-23 | 2011-03-25 | Commissariat Energie Atomique | Substrat heterogene comportant une couche sacrificielle et son procede de realisation. |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8637381B2 (en) * | 2011-10-17 | 2014-01-28 | International Business Machines Corporation | High-k dielectric and silicon nitride box region |
US9481566B2 (en) | 2012-07-31 | 2016-11-01 | Soitec | Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices |
CN106348245B (zh) * | 2015-07-23 | 2018-02-06 | 中芯国际集成电路制造(上海)有限公司 | 一种mems器件及其制备方法、电子装置 |
CN108190828A (zh) * | 2018-02-07 | 2018-06-22 | 北京先通康桥医药科技有限公司 | Mems传感器线阵、触诊探头及其制造方法 |
CN108682661A (zh) * | 2018-04-17 | 2018-10-19 | 中芯集成电路(宁波)有限公司 | 一种soi基底及soi基底的形成方法 |
FR3086096B1 (fr) | 2018-09-14 | 2021-08-27 | Soitec Silicon On Insulator | Procede de realisation d'un substrat avance pour une integration hybride |
FR3091032B1 (fr) * | 2018-12-20 | 2020-12-11 | Soitec Silicon On Insulator | Procédé de transfert d’une couche superficielle sur des cavités |
US10981780B2 (en) | 2019-08-19 | 2021-04-20 | Infineon Technologies Ag | Membrane support for dual backplate transducers |
DE102021213259A1 (de) | 2021-11-25 | 2023-05-25 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Cavity SOI Substrats und mikromechanischen Strukturen darin |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61184843A (ja) * | 1985-02-13 | 1986-08-18 | Toshiba Corp | 複合半導体装置とその製造方法 |
FR2579809B1 (fr) * | 1985-04-02 | 1987-05-15 | Thomson Csf | Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede |
NL8800847A (nl) * | 1988-04-05 | 1989-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een soi-struktuur. |
US4956314A (en) * | 1989-05-30 | 1990-09-11 | Motorola, Inc. | Differential etching of silicon nitride |
JPH088231B2 (ja) * | 1989-10-02 | 1996-01-29 | 大日本スクリーン製造株式会社 | 絶縁膜の選択的除去方法 |
JPH0476951A (ja) * | 1990-07-18 | 1992-03-11 | Fujitsu Ltd | 半導体装置の製造方法および半導体装置 |
US5376233A (en) * | 1992-02-10 | 1994-12-27 | Texas Instruments Incorporated | Method for selectively etching oxides |
JP3367113B2 (ja) * | 1992-04-27 | 2003-01-14 | 株式会社デンソー | 加速度センサ |
JPH06302834A (ja) * | 1993-04-09 | 1994-10-28 | Fujikura Ltd | 薄膜構造の製造方法 |
US5393692A (en) * | 1993-07-28 | 1995-02-28 | Taiwan Semiconductor Manufacturing Company | Recessed side-wall poly plugged local oxidation |
US5658698A (en) * | 1994-01-31 | 1997-08-19 | Canon Kabushiki Kaisha | Microstructure, process for manufacturing thereof and devices incorporating the same |
JP3181174B2 (ja) * | 1994-06-08 | 2001-07-03 | キヤノン株式会社 | マイクロ構造体の形成方法 |
US5466630A (en) * | 1994-03-21 | 1995-11-14 | United Microelectronics Corp. | Silicon-on-insulator technique with buried gap |
JPH08105748A (ja) * | 1994-10-06 | 1996-04-23 | Murata Mfg Co Ltd | 角速度センサ、その共振周波数調整方法及びその製造方法 |
JP3182301B2 (ja) * | 1994-11-07 | 2001-07-03 | キヤノン株式会社 | マイクロ構造体及びその形成法 |
JP3430771B2 (ja) * | 1996-02-05 | 2003-07-28 | 株式会社デンソー | 半導体力学量センサの製造方法 |
JPH10290036A (ja) * | 1997-04-11 | 1998-10-27 | Nissan Motor Co Ltd | 表面マイクロマシンの製造方法 |
JPH1131825A (ja) * | 1997-07-10 | 1999-02-02 | Denso Corp | 半導体力学量センサの製造方法 |
US6191007B1 (en) * | 1997-04-28 | 2001-02-20 | Denso Corporation | Method for manufacturing a semiconductor substrate |
JP4144047B2 (ja) * | 1997-08-20 | 2008-09-03 | 株式会社デンソー | 半導体基板の製造方法 |
US5976945A (en) * | 1997-11-20 | 1999-11-02 | Vanguard International Semiconductor Corporation | Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor |
US5972758A (en) | 1997-12-04 | 1999-10-26 | Intel Corporation | Pedestal isolated junction structure and method of manufacture |
JP4032476B2 (ja) * | 1997-12-25 | 2008-01-16 | 日産自動車株式会社 | 微小装置の製造方法 |
JP3424550B2 (ja) * | 1998-04-13 | 2003-07-07 | 株式会社デンソー | 半導体力学量センサの製造方法 |
WO2000060652A1 (fr) * | 1999-03-30 | 2000-10-12 | Citizen Watch Co., Ltd. | Procede de fabrication d'un substrat a couches minces et substrat a couches minces fabrique selon ce procede |
US6335292B1 (en) * | 1999-04-15 | 2002-01-01 | Micron Technology, Inc. | Method of controlling striations and CD loss in contact oxide etch |
FR2795554B1 (fr) * | 1999-06-28 | 2003-08-22 | France Telecom | Procede de gravure laterale par trous pour fabriquer des dis positifs semi-conducteurs |
EP1134808B1 (en) * | 1999-07-15 | 2011-10-05 | Shin-Etsu Handotai Co., Ltd. | A method of producing a bonded wafer |
FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
US6372657B1 (en) * | 2000-08-31 | 2002-04-16 | Micron Technology, Inc. | Method for selective etching of oxides |
DE10064494A1 (de) * | 2000-12-22 | 2002-07-04 | Bosch Gmbh Robert | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist |
DE10124038A1 (de) * | 2001-05-16 | 2002-11-21 | Atmel Germany Gmbh | Verfahren zur Herstellung vergrabener Bereiche |
US6835633B2 (en) * | 2002-07-24 | 2004-12-28 | International Business Machines Corporation | SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layer |
DE60225484T2 (de) * | 2002-08-26 | 2009-03-12 | International Business Machines Corp. | Membranakivierter mikroelektromechanischer schalter |
EP1396883A3 (en) * | 2002-09-04 | 2005-11-30 | Canon Kabushiki Kaisha | Substrate and manufacturing method therefor |
FR2847077B1 (fr) * | 2002-11-12 | 2006-02-17 | Soitec Silicon On Insulator | Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation |
JP4007172B2 (ja) * | 2002-12-03 | 2007-11-14 | ソニー株式会社 | マイクロマシンおよびその製造方法 |
FR2849269B1 (fr) * | 2002-12-20 | 2005-07-29 | Soitec Silicon On Insulator | Procede de realisation de cavites dans une plaque de silicium |
ATE415703T1 (de) * | 2002-12-20 | 2008-12-15 | Soitec Silicon On Insulator | Herstellung von hohlräumen in einer siliziumscheibe |
FR2850487B1 (fr) * | 2002-12-24 | 2005-12-09 | Commissariat Energie Atomique | Procede de realisation de substrats mixtes et structure ainsi obtenue |
KR100546855B1 (ko) * | 2002-12-28 | 2006-01-25 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
JP4238724B2 (ja) * | 2003-03-27 | 2009-03-18 | 株式会社デンソー | 半導体装置 |
JP2004319538A (ja) * | 2003-04-10 | 2004-11-11 | Seiko Epson Corp | 半導体装置の製造方法、集積回路、電子光学装置及び電子機器 |
US6936491B2 (en) * | 2003-06-04 | 2005-08-30 | Robert Bosch Gmbh | Method of fabricating microelectromechanical systems and devices having trench isolated contacts |
US6936522B2 (en) * | 2003-06-26 | 2005-08-30 | International Business Machines Corporation | Selective silicon-on-insulator isolation structure and method |
FR2876220B1 (fr) * | 2004-10-06 | 2007-09-28 | Commissariat Energie Atomique | Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees. |
-
2004
- 2004-09-30 FR FR0452217A patent/FR2875947B1/fr not_active Expired - Fee Related
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2005
- 2005-09-27 AT AT05801275T patent/ATE492029T1/de not_active IP Right Cessation
- 2005-09-27 JP JP2007534016A patent/JP2008514441A/ja active Pending
- 2005-09-27 CN CNA200580033080XA patent/CN101032014A/zh active Pending
- 2005-09-27 WO PCT/EP2005/054854 patent/WO2006035031A1/en active Application Filing
- 2005-09-27 EP EP05801275A patent/EP1794789B1/en active Active
- 2005-09-27 US US11/575,181 patent/US20080036039A1/en not_active Abandoned
- 2005-09-27 DE DE602005025375T patent/DE602005025375D1/de active Active
- 2005-09-27 KR KR1020077006956A patent/KR100860546B1/ko active IP Right Grant
- 2005-09-27 CN CN201210058695XA patent/CN102637626A/zh active Pending
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2010
- 2010-11-30 JP JP2010266922A patent/JP2011098434A/ja active Pending
- 2010-11-30 JP JP2010266941A patent/JP2011098435A/ja active Pending
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104756233A (zh) * | 2012-10-22 | 2015-07-01 | 夏普株式会社 | 半导体器件的制造方法 |
CN104944361B (zh) * | 2014-03-25 | 2016-05-18 | 中芯国际集成电路制造(北京)有限公司 | 一种mems器件的制作方法 |
CN105895575A (zh) * | 2016-05-09 | 2016-08-24 | 中国科学院上海微***与信息技术研究所 | 一种图形化绝缘体上硅衬底材料及其制备方法 |
CN105895575B (zh) * | 2016-05-09 | 2018-09-25 | 中国科学院上海微***与信息技术研究所 | 一种图形化绝缘体上硅衬底材料及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
DE602005025375D1 (de) | 2011-01-27 |
KR100860546B1 (ko) | 2008-09-26 |
WO2006035031A1 (en) | 2006-04-06 |
JP2011098435A (ja) | 2011-05-19 |
US20080036039A1 (en) | 2008-02-14 |
FR2875947A1 (fr) | 2006-03-31 |
EP1794789B1 (en) | 2010-12-15 |
KR20070046202A (ko) | 2007-05-02 |
FR2875947B1 (fr) | 2007-09-07 |
EP1794789A1 (en) | 2007-06-13 |
JP2011098434A (ja) | 2011-05-19 |
ATE492029T1 (de) | 2011-01-15 |
US20130012024A1 (en) | 2013-01-10 |
CN102637626A (zh) | 2012-08-15 |
JP2008514441A (ja) | 2008-05-08 |
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