FR2875947B1 - Nouvelle structure pour microelectronique et microsysteme et procede de realisation - Google Patents

Nouvelle structure pour microelectronique et microsysteme et procede de realisation

Info

Publication number
FR2875947B1
FR2875947B1 FR0452217A FR0452217A FR2875947B1 FR 2875947 B1 FR2875947 B1 FR 2875947B1 FR 0452217 A FR0452217 A FR 0452217A FR 0452217 A FR0452217 A FR 0452217A FR 2875947 B1 FR2875947 B1 FR 2875947B1
Authority
FR
France
Prior art keywords
microsystems
microelectronics
layer
novel structure
making same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0452217A
Other languages
English (en)
Other versions
FR2875947A1 (fr
Inventor
Bernard Aspar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tracit Technologies SA
Original Assignee
Tracit Technologies SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0452217A priority Critical patent/FR2875947B1/fr
Application filed by Tracit Technologies SA filed Critical Tracit Technologies SA
Priority to AT05801275T priority patent/ATE492029T1/de
Priority to KR1020077006956A priority patent/KR100860546B1/ko
Priority to DE602005025375T priority patent/DE602005025375D1/de
Priority to US11/575,181 priority patent/US20080036039A1/en
Priority to CN201210058695XA priority patent/CN102637626A/zh
Priority to CNA200580033080XA priority patent/CN101032014A/zh
Priority to EP05801275A priority patent/EP1794789B1/fr
Priority to JP2007534016A priority patent/JP2008514441A/ja
Priority to PCT/EP2005/054854 priority patent/WO2006035031A1/fr
Publication of FR2875947A1 publication Critical patent/FR2875947A1/fr
Application granted granted Critical
Publication of FR2875947B1 publication Critical patent/FR2875947B1/fr
Priority to JP2010266922A priority patent/JP2011098434A/ja
Priority to JP2010266941A priority patent/JP2011098435A/ja
Priority to US13/618,697 priority patent/US20130012024A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Micromachines (AREA)
  • Weting (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Silicon Polymers (AREA)
  • Inorganic Insulating Materials (AREA)
  • Laminated Bodies (AREA)
FR0452217A 2004-09-30 2004-09-30 Nouvelle structure pour microelectronique et microsysteme et procede de realisation Expired - Fee Related FR2875947B1 (fr)

Priority Applications (13)

Application Number Priority Date Filing Date Title
FR0452217A FR2875947B1 (fr) 2004-09-30 2004-09-30 Nouvelle structure pour microelectronique et microsysteme et procede de realisation
EP05801275A EP1794789B1 (fr) 2004-09-30 2005-09-27 Structures destinees a des applications de microelectronique et de microsystemes et procede de fabrication associe
DE602005025375T DE602005025375D1 (de) 2004-09-30 2005-09-27 Strukturen für mikroelektronik und mikrosystem sowie herstellungsverfahren
US11/575,181 US20080036039A1 (en) 2004-09-30 2005-09-27 New Structure for Microelectronics and Microsystem and Manufacturing Process
CN201210058695XA CN102637626A (zh) 2004-09-30 2005-09-27 用于微电子和微***的结构的制造方法
CNA200580033080XA CN101032014A (zh) 2004-09-30 2005-09-27 用于微电子和微***的新结构以及制造方法
AT05801275T ATE492029T1 (de) 2004-09-30 2005-09-27 Strukturen für mikroelektronik und mikrosystem sowie herstellungsverfahren
JP2007534016A JP2008514441A (ja) 2004-09-30 2005-09-27 マイクロエレクトロニクス及びマイクロシステムの新規構造、及びその製造方法
PCT/EP2005/054854 WO2006035031A1 (fr) 2004-09-30 2005-09-27 Nouvelle structure destinee a des applications de microelectronique et de microsystemes et procede de fabrication associe
KR1020077006956A KR100860546B1 (ko) 2004-09-30 2005-09-27 새로운 미세 전자적 구조, 마이크로 시스템, 및 그 제조프로세스
JP2010266922A JP2011098434A (ja) 2004-09-30 2010-11-30 マイクロエレクトロニクス及びマイクロシステムの新規構造、及びその製造方法
JP2010266941A JP2011098435A (ja) 2004-09-30 2010-11-30 マイクロエレクトロニクス及びマイクロシステムの新規構造、及びその製造方法
US13/618,697 US20130012024A1 (en) 2004-09-30 2012-09-14 Structure for microelectronics and microsystem and manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0452217A FR2875947B1 (fr) 2004-09-30 2004-09-30 Nouvelle structure pour microelectronique et microsysteme et procede de realisation

Publications (2)

Publication Number Publication Date
FR2875947A1 FR2875947A1 (fr) 2006-03-31
FR2875947B1 true FR2875947B1 (fr) 2007-09-07

Family

ID=34952707

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0452217A Expired - Fee Related FR2875947B1 (fr) 2004-09-30 2004-09-30 Nouvelle structure pour microelectronique et microsysteme et procede de realisation

Country Status (9)

Country Link
US (2) US20080036039A1 (fr)
EP (1) EP1794789B1 (fr)
JP (3) JP2008514441A (fr)
KR (1) KR100860546B1 (fr)
CN (2) CN101032014A (fr)
AT (1) ATE492029T1 (fr)
DE (1) DE602005025375D1 (fr)
FR (1) FR2875947B1 (fr)
WO (1) WO2006035031A1 (fr)

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US20060276008A1 (en) * 2005-06-02 2006-12-07 Vesa-Pekka Lempinen Thinning
FR2897982B1 (fr) * 2006-02-27 2008-07-11 Tracit Technologies Sa Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat
FR2932788A1 (fr) 2008-06-23 2009-12-25 Commissariat Energie Atomique Procede de fabrication d'un composant electromecanique mems / nems.
FR2932923B1 (fr) 2008-06-23 2011-03-25 Commissariat Energie Atomique Substrat heterogene comportant une couche sacrificielle et son procede de realisation.
FR2932789B1 (fr) 2008-06-23 2011-04-15 Commissariat Energie Atomique Procede de fabrication d'une structure electromecanique comportant au moins un pilier de renfort mecanique.
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8637381B2 (en) * 2011-10-17 2014-01-28 International Business Machines Corporation High-k dielectric and silicon nitride box region
WO2014020387A1 (fr) 2012-07-31 2014-02-06 Soitec Procédés de formation de structures semi-conductrices incluant des dispositifs de microsystème électromécanique et des circuits intégrés sur les côtés opposés de substrats, et structures ainsi que dispositifs connexes
WO2014064873A1 (fr) * 2012-10-22 2014-05-01 シャープ株式会社 Procédé de fabrication de dispositif à semi-conducteur
CN104944361B (zh) * 2014-03-25 2016-05-18 中芯国际集成电路制造(北京)有限公司 一种mems器件的制作方法
CN106348245B (zh) * 2015-07-23 2018-02-06 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制备方法、电子装置
CN105895575B (zh) * 2016-05-09 2018-09-25 中国科学院上海微***与信息技术研究所 一种图形化绝缘体上硅衬底材料及其制备方法
CN108190828A (zh) * 2018-02-07 2018-06-22 北京先通康桥医药科技有限公司 Mems传感器线阵、触诊探头及其制造方法
CN108682661A (zh) * 2018-04-17 2018-10-19 中芯集成电路（宁波）有限公司 一种soi基底及soi基底的形成方法
FR3086096B1 (fr) * 2018-09-14 2021-08-27 Soitec Silicon On Insulator Procede de realisation d'un substrat avance pour une integration hybride
FR3091032B1 (fr) * 2018-12-20 2020-12-11 Soitec Silicon On Insulator Procédé de transfert d’une couche superficielle sur des cavités
US10981780B2 (en) 2019-08-19 2021-04-20 Infineon Technologies Ag Membrane support for dual backplate transducers
DE102021213259A1 (de) 2021-11-25 2023-05-25 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Cavity SOI Substrats und mikromechanischen Strukturen darin

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Also Published As

Publication number Publication date
JP2008514441A (ja) 2008-05-08
DE602005025375D1 (de) 2011-01-27
US20130012024A1 (en) 2013-01-10
EP1794789B1 (fr) 2010-12-15
WO2006035031A1 (fr) 2006-04-06
EP1794789A1 (fr) 2007-06-13
US20080036039A1 (en) 2008-02-14
FR2875947A1 (fr) 2006-03-31
JP2011098435A (ja) 2011-05-19
CN101032014A (zh) 2007-09-05
KR20070046202A (ko) 2007-05-02
JP2011098434A (ja) 2011-05-19
KR100860546B1 (ko) 2008-09-26
CN102637626A (zh) 2012-08-15
ATE492029T1 (de) 2011-01-15

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Effective date: 20130531