CN100595638C - 图像显示装置 - Google Patents
图像显示装置 Download PDFInfo
- Publication number
- CN100595638C CN100595638C CN200410003629A CN200410003629A CN100595638C CN 100595638 C CN100595638 C CN 100595638C CN 200410003629 A CN200410003629 A CN 200410003629A CN 200410003629 A CN200410003629 A CN 200410003629A CN 100595638 C CN100595638 C CN 100595638C
- Authority
- CN
- China
- Prior art keywords
- circuit
- mentioned
- tft
- film transistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of El Displays (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP176281/2003 | 2003-06-20 | ||
JP2003176281A JP4464078B2 (ja) | 2003-06-20 | 2003-06-20 | 画像表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1573436A CN1573436A (zh) | 2005-02-02 |
CN100595638C true CN100595638C (zh) | 2010-03-24 |
Family
ID=33516255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200410003629A Expired - Lifetime CN100595638C (zh) | 2003-06-20 | 2004-02-04 | 图像显示装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7262821B2 (zh) |
JP (1) | JP4464078B2 (zh) |
KR (1) | KR101022619B1 (zh) |
CN (1) | CN100595638C (zh) |
TW (1) | TWI364742B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4406540B2 (ja) * | 2003-03-28 | 2010-01-27 | シャープ株式会社 | 薄膜トランジスタ基板およびその製造方法 |
US7710524B2 (en) * | 2006-03-15 | 2010-05-04 | Quanta Display, Inc. | Liquid crystal display with compensated pixel arrays |
JP5109302B2 (ja) * | 2006-07-31 | 2012-12-26 | ソニー株式会社 | 表示装置およびその製造方法 |
US8654045B2 (en) | 2006-07-31 | 2014-02-18 | Sony Corporation | Display and method for manufacturing display |
JP4534169B2 (ja) * | 2007-09-27 | 2010-09-01 | ソニー株式会社 | 表示装置及びその駆動方法と電子機器 |
US20110157113A1 (en) * | 2008-10-02 | 2011-06-30 | Tadayoshi Miyamoto | Display panel and display device using the same |
TWI401663B (zh) * | 2009-03-13 | 2013-07-11 | Au Optronics Corp | 具雙向穩壓功能之液晶顯示裝置 |
CN102844873B (zh) * | 2010-03-31 | 2015-06-17 | 株式会社半导体能源研究所 | 半导体显示装置 |
US9159283B2 (en) * | 2011-07-18 | 2015-10-13 | Innolux Corporation | Switch circuit, pixel element and display panel for using in refreshing memory in pixel |
TWI456555B (zh) * | 2011-12-23 | 2014-10-11 | Innolux Corp | 顯示系統 |
CN106784412B (zh) * | 2017-03-30 | 2019-02-26 | 武汉华星光电技术有限公司 | 柔性有机发光二极管显示器及其制作方法 |
CN109458986A (zh) * | 2018-11-12 | 2019-03-12 | 吴基玄 | 一种海拔高度计量装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5851440A (en) * | 1995-09-20 | 1998-12-22 | Hitachi, Ltd. | Semiconductor device and liquid crystal display apparatus using the same |
WO2000002251A1 (fr) * | 1998-07-06 | 2000-01-13 | Matsushita Electric Industrial Co., Ltd. | Transistor a couches minces et affichage a cristaux liquides |
CN1346153A (zh) * | 2000-09-29 | 2002-04-24 | 三洋电机株式会社 | 半导体器件 |
US6512504B1 (en) * | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
Family Cites Families (22)
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JPH05107558A (ja) * | 1991-10-17 | 1993-04-30 | Seiko Epson Corp | アクテイブマトリクス基板及びアクテイブマトリクス基板の製造方法 |
US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
JP3640224B2 (ja) * | 1996-06-25 | 2005-04-20 | 株式会社半導体エネルギー研究所 | 液晶表示パネル |
JP2697728B2 (ja) * | 1996-08-12 | 1998-01-14 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法 |
JPH10228248A (ja) * | 1996-12-09 | 1998-08-25 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス表示装置およびその作製方法 |
JPH10229197A (ja) * | 1997-02-17 | 1998-08-25 | Sanyo Electric Co Ltd | 薄膜トランジスタ、薄膜トランジスタの製造方法 |
JP2000243970A (ja) * | 1999-02-24 | 2000-09-08 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法 |
JP2000208771A (ja) * | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体装置、液晶表示装置およびこれらの製造方法 |
JP4058847B2 (ja) * | 1999-03-25 | 2008-03-12 | セイコーエプソン株式会社 | 電気光学装置の駆動回路および電気光学装置および投射型表示装置 |
JP2001023899A (ja) * | 1999-07-13 | 2001-01-26 | Hitachi Ltd | 半導体薄膜とその半導体膜を用いた液晶表示装置及びその製造方法 |
KR100489873B1 (ko) * | 1999-12-31 | 2005-05-17 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 제조방법 |
JP2001194646A (ja) * | 2000-01-13 | 2001-07-19 | Hitachi Ltd | アクティブマトリクス液晶表示装置 |
JP4869504B2 (ja) * | 2000-06-27 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001067019A (ja) * | 2000-07-10 | 2001-03-16 | Seiko Epson Corp | アクティブマトリクス基板及びアクティブマトリクス基板の製造方法 |
JP3711848B2 (ja) * | 2000-07-31 | 2005-11-02 | セイコーエプソン株式会社 | 電気光学装置及びそれを有する電子機器並びに投射型表示装置 |
JP3758476B2 (ja) * | 2000-07-31 | 2006-03-22 | セイコーエプソン株式会社 | 電気光学装置及びそれを有する電子機器並びに投射型表示装置 |
JP4715016B2 (ja) * | 2001-02-15 | 2011-07-06 | ソニー株式会社 | ポリシリコン膜の評価方法 |
JP2002252181A (ja) * | 2001-02-22 | 2002-09-06 | Sanyo Electric Co Ltd | 多結晶半導体層の製造方法及びレーザアニール装置 |
JP2002299632A (ja) * | 2001-03-30 | 2002-10-11 | Sanyo Electric Co Ltd | 半導体装置及びアクティブマトリクス型表示装置 |
JP4618948B2 (ja) * | 2001-08-24 | 2011-01-26 | 株式会社半導体エネルギー研究所 | 半導体装置の評価方法 |
JP3467698B2 (ja) * | 2001-08-27 | 2003-11-17 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法 |
US20040038438A1 (en) * | 2002-08-23 | 2004-02-26 | Toppoly Optoelectronics Corp. | Method for reducing surface roughness of polysilicon films for liquid crystal displays |
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2003
- 2003-06-20 JP JP2003176281A patent/JP4464078B2/ja not_active Expired - Fee Related
- 2003-12-25 TW TW092136904A patent/TWI364742B/zh not_active IP Right Cessation
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2004
- 2004-02-04 CN CN200410003629A patent/CN100595638C/zh not_active Expired - Lifetime
- 2004-02-06 US US10/772,431 patent/US7262821B2/en not_active Expired - Fee Related
- 2004-02-09 KR KR1020040008323A patent/KR101022619B1/ko active IP Right Grant
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2007
- 2007-07-23 US US11/878,285 patent/US7456913B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5851440A (en) * | 1995-09-20 | 1998-12-22 | Hitachi, Ltd. | Semiconductor device and liquid crystal display apparatus using the same |
WO2000002251A1 (fr) * | 1998-07-06 | 2000-01-13 | Matsushita Electric Industrial Co., Ltd. | Transistor a couches minces et affichage a cristaux liquides |
US6512504B1 (en) * | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
CN1346153A (zh) * | 2000-09-29 | 2002-04-24 | 三洋电机株式会社 | 半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
US20070262319A1 (en) | 2007-11-15 |
KR20040110075A (ko) | 2004-12-29 |
CN1573436A (zh) | 2005-02-02 |
JP4464078B2 (ja) | 2010-05-19 |
KR101022619B1 (ko) | 2011-03-16 |
US7456913B2 (en) | 2008-11-25 |
US20040257486A1 (en) | 2004-12-23 |
JP2005010606A (ja) | 2005-01-13 |
TWI364742B (en) | 2012-05-21 |
US7262821B2 (en) | 2007-08-28 |
TW200501027A (en) | 2005-01-01 |
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