CN100541849C - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

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Publication number
CN100541849C
CN100541849C CNB2007101808877A CN200710180887A CN100541849C CN 100541849 C CN100541849 C CN 100541849C CN B2007101808877 A CNB2007101808877 A CN B2007101808877A CN 200710180887 A CN200710180887 A CN 200710180887A CN 100541849 C CN100541849 C CN 100541849C
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CN
China
Prior art keywords
layer
emitting elements
semiconductor light
light
removing layer
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Expired - Fee Related
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CNB2007101808877A
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English (en)
Chinese (zh)
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CN101165931A (zh
Inventor
今野泰一郎
饭塚和幸
新井优洋
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Sumitomo Chemical Co Ltd
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Hitachi Cable Ltd
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Publication of CN101165931A publication Critical patent/CN101165931A/zh
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CNB2007101808877A 2006-10-20 2007-10-19 半导体发光元件 Expired - Fee Related CN100541849C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006286485 2006-10-20
JP2006286485A JP4835377B2 (ja) 2006-10-20 2006-10-20 半導体発光素子

Publications (2)

Publication Number Publication Date
CN101165931A CN101165931A (zh) 2008-04-23
CN100541849C true CN100541849C (zh) 2009-09-16

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CNB2007101808877A Expired - Fee Related CN100541849C (zh) 2006-10-20 2007-10-19 半导体发光元件

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JP (1) JP4835377B2 (ja)
CN (1) CN100541849C (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5346443B2 (ja) 2007-04-16 2013-11-20 ローム株式会社 半導体発光素子およびその製造方法
JP5493252B2 (ja) * 2007-06-28 2014-05-14 日亜化学工業株式会社 半導体発光素子
JP5245529B2 (ja) * 2008-05-15 2013-07-24 日立電線株式会社 半導体発光素子及び半導体発光素子の製造方法
JP5024247B2 (ja) * 2008-09-12 2012-09-12 日立電線株式会社 発光素子
JP5282503B2 (ja) * 2008-09-19 2013-09-04 日亜化学工業株式会社 半導体発光素子
KR101064006B1 (ko) 2009-03-03 2011-09-08 엘지이노텍 주식회사 발광소자
KR100999713B1 (ko) 2009-03-17 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP2011009524A (ja) * 2009-06-26 2011-01-13 Hitachi Cable Ltd 発光素子及び発光素子の製造方法
JP2011035017A (ja) * 2009-07-30 2011-02-17 Hitachi Cable Ltd 発光素子
JP5518078B2 (ja) * 2009-08-31 2014-06-11 京セラ株式会社 発光素子
KR101081166B1 (ko) 2009-09-23 2011-11-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101103892B1 (ko) 2009-12-08 2012-01-12 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
JP5733594B2 (ja) 2010-02-18 2015-06-10 スタンレー電気株式会社 半導体発光装置
JP5801542B2 (ja) * 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP5687858B2 (ja) 2010-07-30 2015-03-25 スタンレー電気株式会社 半導体発光装置
JP5593163B2 (ja) 2010-08-18 2014-09-17 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP5087672B2 (ja) 2010-12-13 2012-12-05 株式会社東芝 半導体発光素子
KR101827975B1 (ko) 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
TWI458122B (zh) 2011-11-23 2014-10-21 Toshiba Kk 半導體發光元件
JP5584331B2 (ja) * 2013-06-10 2014-09-03 ローム株式会社 半導体発光素子
US10381517B2 (en) * 2014-01-29 2019-08-13 Auk Corp. Aluminum-gallium-indium-phosphorus-based light emitting diode having gallium nitride layer of uneven type and method for manufacturing same
CN110854249A (zh) * 2014-03-14 2020-02-28 晶元光电股份有限公司 发光元件
JP6197799B2 (ja) * 2015-01-09 2017-09-20 信越半導体株式会社 発光素子及び発光素子の製造方法
KR102403958B1 (ko) * 2015-08-19 2022-06-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
JP6507947B2 (ja) * 2015-09-02 2019-05-08 信越半導体株式会社 発光素子の製造方法
CN106910799B (zh) * 2017-02-09 2019-03-08 华灿光电（浙江）有限公司 一种发光二极管的制备方法
CN109698123B (zh) * 2017-10-24 2020-09-18 山东浪潮华光光电子股份有限公司 一种GaAs基LED晶片的衬底腐蚀方法
KR102333489B1 (ko) * 2019-10-01 2021-12-01 에피스타 코포레이션 발광 디바이스
KR102346905B1 (ko) * 2020-06-02 2022-01-05 에피스타 코포레이션 발광 디바이스

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
JP2004031856A (ja) * 2002-06-28 2004-01-29 Sumitomo Electric Ind Ltd ＺｎＳｅ系発光装置およびその製造方法
US6972438B2 (en) * 2003-09-30 2005-12-06 Cree, Inc. Light emitting diode with porous SiC substrate and method for fabricating
JP2005277374A (ja) * 2004-02-26 2005-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法

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Publication number Publication date
JP4835377B2 (ja) 2011-12-14
CN101165931A (zh) 2008-04-23
JP2008103627A (ja) 2008-05-01

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Granted publication date: 20090916

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