CN100527613C - 弹性边界波器件、谐振器以及滤波器 - Google Patents
弹性边界波器件、谐振器以及滤波器 Download PDFInfo
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- CN100527613C CN100527613C CNB200710085821XA CN200710085821A CN100527613C CN 100527613 C CN100527613 C CN 100527613C CN B200710085821X A CNB200710085821X A CN B200710085821XA CN 200710085821 A CN200710085821 A CN 200710085821A CN 100527613 C CN100527613 C CN 100527613C
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000010949 copper Substances 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 15
- 229910003327 LiNbO3 Inorganic materials 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 claims description 3
- 238000004088 simulation Methods 0.000 description 71
- 238000004364 calculation method Methods 0.000 description 20
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000010897 surface acoustic wave method Methods 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Optical Head (AREA)
- Inorganic Insulating Materials (AREA)
- Luminescent Compositions (AREA)
- Television Signal Processing For Recording (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006053486 | 2006-02-28 | ||
JP2006053486 | 2006-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101030764A CN101030764A (zh) | 2007-09-05 |
CN100527613C true CN100527613C (zh) | 2009-08-12 |
Family
ID=38557971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200710085821XA Expired - Fee Related CN100527613C (zh) | 2006-02-28 | 2007-02-28 | 弹性边界波器件、谐振器以及滤波器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7471171B2 (zh) |
KR (1) | KR100856217B1 (zh) |
CN (1) | CN100527613C (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4483785B2 (ja) * | 2004-01-13 | 2010-06-16 | 株式会社村田製作所 | 弾性境界波装置 |
JP4001157B2 (ja) * | 2005-07-22 | 2007-10-31 | 株式会社村田製作所 | 弾性境界波装置 |
ATE551777T1 (de) * | 2006-04-24 | 2012-04-15 | Murata Manufacturing Co | Elastische oberflächenwellenvorrichtung |
WO2009082706A1 (en) * | 2007-12-21 | 2009-07-02 | The Trustees Of Columbia University In The City Of New York | Active cmos sensor array for electrochemical biomolecular detection |
WO2009139108A1 (ja) * | 2008-05-12 | 2009-11-19 | 株式会社村田製作所 | 弾性境界波装置 |
US8598968B2 (en) * | 2008-11-10 | 2013-12-03 | Panasonic Corporation | Elastic wave element and electronic device using the same |
WO2011007690A1 (ja) * | 2009-07-17 | 2011-01-20 | 株式会社村田製作所 | 弾性表面波装置 |
WO2013032753A2 (en) * | 2011-08-26 | 2013-03-07 | The Trustees Of Columbia University In The City Of New York | Systems and methods for switched-inductor integrated voltage regulators |
US9236849B2 (en) | 2012-04-19 | 2016-01-12 | Triquint Semiconductor, Inc. | High coupling, low loss PBAW device and associated method |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4484098A (en) * | 1983-12-19 | 1984-11-20 | United Technologies Corporation | Environmentally stable lithium niobate acoustic wave devices |
JPH01114110A (ja) * | 1987-10-27 | 1989-05-02 | Fujitsu Ltd | 圧電薄膜弾性表面波装置 |
JPH07212174A (ja) * | 1994-01-11 | 1995-08-11 | Hitachi Ltd | 弾性境界波装置 |
JP2001196896A (ja) | 2000-01-11 | 2001-07-19 | Seiko Epson Corp | 表面弾性波素子 |
JP4109877B2 (ja) | 2001-03-04 | 2008-07-02 | 和彦 山之内 | 弾性表面波機能素子 |
JPWO2005036744A1 (ja) * | 2003-10-10 | 2007-11-22 | 株式会社村田製作所 | 弾性境界波装置 |
JPWO2005036743A1 (ja) * | 2003-10-10 | 2007-11-22 | 株式会社村田製作所 | 弾性境界波装置 |
JP3894917B2 (ja) * | 2003-11-12 | 2007-03-22 | 富士通メディアデバイス株式会社 | 弾性境界波デバイス及びその製造方法 |
CN1938946A (zh) | 2004-03-29 | 2007-03-28 | 株式会社村田制作所 | 声界面波装置的制造方法以及声界面波装置 |
WO2005099091A1 (ja) * | 2004-04-08 | 2005-10-20 | Murata Manufacturing Co., Ltd. | 弾性境界波フィルタ |
JP4466655B2 (ja) * | 2005-05-20 | 2010-05-26 | 株式会社村田製作所 | 弾性境界波装置 |
-
2007
- 2007-02-28 US US11/711,893 patent/US7471171B2/en active Active
- 2007-02-28 CN CNB200710085821XA patent/CN100527613C/zh not_active Expired - Fee Related
- 2007-02-28 KR KR1020070020529A patent/KR100856217B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20070229192A1 (en) | 2007-10-04 |
US7471171B2 (en) | 2008-12-30 |
KR100856217B1 (ko) | 2008-09-03 |
KR20070089645A (ko) | 2007-08-31 |
CN101030764A (zh) | 2007-09-05 |
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Effective date of registration: 20100804 Address after: Kanagawa Co-patentee after: Taiyo Yuden Co., Ltd. Patentee after: Fujitsu Media Devices Ltd Address before: Kanagawa Co-patentee before: Fujitsu Ltd. Patentee before: Fujitsu Media Devices Ltd |
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ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: TAIYO YUDEN CO., LTD. Owner name: TAIYO YUDEN CO., LTD. Free format text: FORMER OWNER: FUJITSU MEDIA DEVICES LTD Effective date: 20101201 |
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