CN100490073C - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法 Download PDF

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CN100490073C
CN100490073C CNB2003801038082A CN200380103808A CN100490073C CN 100490073 C CN100490073 C CN 100490073C CN B2003801038082 A CNB2003801038082 A CN B2003801038082A CN 200380103808 A CN200380103808 A CN 200380103808A CN 100490073 C CN100490073 C CN 100490073C
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plasma
peristome
dividing plate
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CN1714430A (zh
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中西敏雄
西田辰夫
尾崎成则
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Abstract

根据本发明，当氮化处理硅基板表面时，在等离子体产生部和硅基板之间配置具有开口部的隔板，控制为硅基板表面的电子密度是le+7(个·cm-3)～le+9(个·cm-3)。根据本发明，有效地抑制了硅基板和氮化膜的劣化。

Description

等离子体处理装置和等离子体处理方法
技术领域
本发明涉及使用等离子体氮化处理或者氧化处理硅基板的等离子体处理装置和等离子体处理方法。
背景技术
在使用了等离子体的硅基板的氮化处理时，例如，向微波激励后的氩气或氪气等的稀有气体等离子体中导入氮气或氮气和氢气、或NH3气体等的包含氮元素的气体。由此，产生N自由基(radical)或NH自由基，而将硅氧化膜表面转换为氮化膜。另外，还存在通过微波等离子体来直接氮化硅基板表面的方法。
若根据现有的装置和方法，则因入射到硅氧化模(硅基板)上的离子，有基底膜(Si、SiO2)或成膜的膜(SiN)受到损害的问题。因膜的损害，存在产生了基板劣化、漏电流增大、因界面特性的劣化造成的晶体管特性的劣化等问题的情况。
另外，作为其他问题，有因向硅氧化膜和硅氮化膜的界面的氧元素的扩散，硅氮化膜的膜厚增加到必要以上的问题。
发明内容
本发明鉴于上述情况而作出，第一目的是提供一种可以有效抑制硅基板(硅氧化膜)和氮化膜的劣化的等离子体处理装置和等离子体处理方法。
第二目的是提供一种可以有效抑制硅氮化膜的膜厚增大的等离子体处理装置和等离子体处理方法。
为了实现上述目的，本发明的第一方式的等离子体处理装置在等离子体产生部和硅基板之间配置具有开口部的隔板。
这样，通过在处理容器内配置隔板，缓和了到达硅基板上的离子能量，可以有效抑制对硅基板和氮化膜自身的损害。另外，透过隔板的开口部而到达硅基板的气体在基板上的流速增加，硅基板表面的氧元素分压降低，从氮化膜向硅基板的表面侧跑的氧元素数量增加。结果，可以有效抑制氮化膜的厚度增大。
作为隔板，优选使用在对应于硅基板的形状的区域内配置的具有多个开口部的隔板。这时，各开口部的开口面积优选是例如13mm2～450mm2，优选，隔板的厚度优选是3mm～7mm，隔板的位置优选位于距所述硅基板的表面20～40mm的上方。
对于开口部的大小，可以是各开口部全部是相同大小，也可以设定为所述隔板的中央部的开口部的直径比位于该中央部的外侧的开口部的直径小。由此，相比于其外侧可以进一步抑制硅基板的中央部的氮化膜的厚度增加。例如，中央部的开口部的直径可以是9.5mm，位于该中央部的外侧的开口部的直径可以是10mm。在设定为所述隔板的中央部的开口部的直径比位于该中央部的外侧的开口部的直径大的情况下，相比于其外侧可以促进硅基板的中央部的氮化膜的厚度增加。
本发明还可以适用于使用等离子体进行氧化处理的装置。即，可以提出在对在处理容器内配置的硅基板，使用等离子体进行氧化处理的等离子体处理装置中，在等离子体产生部和所述硅基板之间配置了具有开口部的隔板的装置。该情况下，也可设定为隔板的中央部的开口部的直径比位于该中央部的外侧的开口部的直径小。例如，中央部的开口部的直径可以是2mm，位于该中央部的外侧的开口部的直径可以是2.5mm。进一步相反，也可设定为隔板的中央部的开口部的直径比位于该中央部的外侧的开口部的直径大。
本发明的另一方式的等离子体处理方法中，将所述硅基板表面的电子密度控制为1e+7(个·cm-3)～1e+9(个·cm-3)。如上所述，通过减弱硅基板上的离子能量和离子密度，可以有效抑制对硅基板和氮化膜的损害。
本发明的另一方式的等离子体处理方法中，将所述硅基板表面的气体流速控制为1e-2(m·sec-1)～1e+1(m·sec-1)。如上所述，若硅基板上的气体流速增加，则硅基板表面的氧元素分压降低，从氮化膜向硅基板的表面侧跑的氧元素的量增加。结果，可以有效抑制氮化膜的厚度增大。
附图说明
图1是表示本发明的实施例的等离子体处理装置的结构的示意图；
图2是实施例所用的等离子体缓冲(baffle)板的平面图；
图3(A)～(C)是表示实施例的等离子体处理工序的一部分的示意图；
图4是表示伴随着氮化处理的时间经过的膜中氮元素含有比例的变化曲线；
图5是表示伴随处理压力的变化的电子密度的变化曲线；
图6是表示伴随处理压力的变化的电子温度的变化曲线；
图7是开口部的大小在中央部及其***不同的等离子体缓冲板的平面图。
具体实施方式
图1表示本发明的实施例的等离子体处理装置10的示意结构。等离子体处理装置10具有形成了保持作为被处理基板的硅晶片W的基板保持台12的处理容器11，处理容器11内的空气(气体)经排气孔11A、11B进行排气。另外，基板保持台12具有加热硅晶片W的加热器功能。
在处理容器11的上方对应于基板保持台12上的硅晶片W形成开口部。该开口部通过由石英和Al2O3构成的电介质板13来塞住。在电介质板13上(外侧)配置作用为天线的槽板14。该槽板14由具有导电性的材质、例如铜的薄圆板构成，形成多个长孔14a。这些长孔14a作为整体按同心圆状，或大致螺旋状排列。
在槽板14上(外侧)配置了由石英、氧化铝、氮化铝等构成的电介质板15。该电介质板15称作滞波板或波长缩短板。在电介质板15上(外侧)配置冷却板16。在冷却板16的内部设置流过冷却介质的冷却介质路径16a。另外，在处理容器11的上端中央设置了导入由微波供给装置17产生的例如2.45GHz的微波的同轴导波管18。
在处理容器11内的硅晶片W的上方配置由石英、氧化铝或金属构成的作为隔板的等离子体缓冲板20。等离子体缓冲板20通过在处理容器11的内壁设置的石英制的衬套21来保持。后面描述等离子体缓冲板20的细节。在基板保持台12的周围配置由铝构成的气体缓冲板26。在气体缓冲板26的下面设置石英覆盖板28。
在处理容器11的内壁设置了导入气体用的气体喷嘴22。通过质量流量(mass flow)控制器23来控制从气体喷嘴供给的气体的流量。在处理容器11的内壁的内侧形成冷却介质流路24，使其包围容器整体。
图2表示等离子体缓冲板20的构造。等离子体缓冲板20通过在厚度为3mm～7mm(例如，约5mm)的圆盘状的板的中央附近形成多个开口部20a构成。另外，模式表示了图中的开口部20a的大小、配置等，当然有时与实际使用的情况不同。
等离子体缓冲板20例如可以由石英、铝、氧化铝、硅、金属等形成。等离子体缓冲板20的位置为距硅晶片W的表面高H2(20mm～50mm，例如30mm)，距浇淋板14的下面为距离H1(40mm～110mm，例如80mm)。若等离子体缓冲板20过于接近硅晶片W表面，则妨碍了均匀的氧化、氮化处理。另一方面，若等离子体缓冲板20离硅晶片W的表面过远，则等离子体密度降低，很难进行氧化·氮化。
在处理直径约200mm的硅晶片W的情况下，等离子体缓冲板20的直径D1可以为360mm、配置了开口部20a的区域的直径D2可以为250mm。在处理直径约300mm的硅晶片W的情况下，可以根据晶片的大小，来适当改变D1、D2的大小。另外，为了实现硅晶片W表面的均匀处理，优选根据距等离子体缓冲板20的硅晶片W的距离H2来设定D2的值，例如，优选是150mm以上。
作为在等离子体缓冲板20上形成的开口部20a的直径，可以设定为2.5mm～10mm。例如，在开口部20a的直径为2.5mm的情况下，其数目可以为1000～3000左右。另外，在开口部20a的直径为5.0mm或10.0mm的情况下，其数目可以为300～700左右。开口部20a的成形可以采用激光加工法。另外，开口部20a的形状并不限于圆形，也可以是窄缝状。这时，各开口部20a的开口面积优选为3mm2～450mm2。若开口部20a的开口面积过大，则离子密度提高，不能减少损害。另一方面，若开口面积过小，则等离子体密度降低，很难进行氧化·氮化。另外，开口部20a的开口面积优选考虑等离子体缓冲板20的厚度来设定。
在使用如上所述结构的等离子体处理装置10来进行等离子体处理时，首先，经排气孔11A、11B进行处理容器11内部的排气，将处理容器11设定为预定的处理压力。之后，从气体喷嘴22中导入氩气、Kr等的惰性气体和氧化气体或氮化气体。
另外，将通过同轴导波管18供给的频率为几GHz、例如2.45GHz的微波经电介质板15、槽板14、电介质板13导入处理容器11中。通过处理容器11内的高密度微波等离子体激励形成的自由基(radical)经等离子体缓冲板20到达硅晶片W的表面。到达了硅晶片W的自由基(气体)沿晶片表面向径向(放射方向)流动，进行快速排气。由此，抑制了自由基的重新结合，一样的基板处理在低温中也可高效地进行。
图3(A)～(C)表示使用了图1的等离子体处理装置10的本实施例的基板处理工序。
将硅基板31(对应于硅晶片W)导入到处理容器11中，而从气体喷嘴22中导入Kr和氧气的混合气体。通过由微波等离子体来激励该气体，来形成原子状氧(氧自由基)O*。这样，如图3(A)所示，该原子状氧O*经等离子体缓冲板20到达硅基板31的表面。
通过由原子状氧来处理硅基板31的表面，如图3(B)所示，在硅基板31的表面上形成了厚度为1.6nm的硅氧化膜32。这样形成的硅氧化膜32，尽管是在400℃左右的非常低的基板温度上形成的硅氧化膜，具有与在1000℃以上的高温下形成的热氧化膜匹敌的漏电流特性。
接着，在图3(C)所示的工序中，向处理容器11中供给氩气和氮气的混合气体，将基板温度设定在400℃后通过供给微波来激励等离子体。
在图3(C)的工序中，将处理容器11的内压设定为0.7Pa，例如在1000SCCM的流量下供给氩气，在例如40SCCM的流量下供给氮气。结果，硅氧化膜32的表面转换为硅氮化膜32A。另外，硅氧化膜32也可以是热氧化膜。
将图3(C)的工序持续20秒以上，例如40秒，结果，硅氮化膜32A生长，若超过拐点，则硅氮化膜32A下的硅氧化膜32中的氧元素开始侵入硅基板31中。
本实施例中，由于在处理容器11内配置了等离子体缓冲板20，所以到达硅晶片W上的离子能量和等离子体密度减少。具体的，将硅晶片W表面的电子密度控制为1e+7(个·cm-3)～1e+9(个·cm-3)。由此，认为对硅氧化膜32和氮化膜32A的造成了损害的离子密度减少，而缓和了对硅氧化膜32和氮化膜32A的损害。
在控制硅晶片W的表面的电子密度的情况下，可以通过例如，(a)减小等离子体缓冲板20的直径，(b)增大等离子体缓冲板20和晶片W表面的间隔，(c)增大等离子体缓冲板20的厚度，来降低电子密度。
另外，通过等离子体缓冲板20的开口部20a到达硅晶片W的气体在晶片W上的流速增加。具体的，将硅晶片W表面的气体流速控制为1e-2(m·sec-1)～1e+1(m·sec-1)。结果，硅晶片W表面的氧元素分压降低，从氮化膜32A向硅晶片W的表面侧跑的氧元素的量增加，所以缓和了氮化膜32A的膜厚增大。这种气体流速的控制通过开口部20a的大小的调整来进行，越小，流速越增加。
另外，等离子体处理装置10由于使用槽板14来产生由微波产生的等离子体，所以可在低功率下产生高密度的等离子体，从这点来看也可实施对基板的损害极小的处理。
接着，图4～图6表示使用等离子体装置10，对硅基板实际进行氮化处理的结果。为了明白本发明的效果，所以还兼表示了与不具有等离子体缓冲板20的现有的等离子体处理装置的比较。处理的条件如下。
即，基板温度是400℃，微波的功率是1500W，处理容器内的压力是50～2000mTorr，氮气的流量是40～150sccm，氩气的流量是1000～2000sccm。
图4表示处理时间一膜中氮元素的比例，在不具有等离子体缓冲板的现有装置中，看到10秒期间增加了约30％的氮元素的比例，但是如本发明那样，根据具有等离子体缓冲板的装置，随着时间的经过膜中氮元素的比例增加变缓。因此，本发明的方法容易控制氮化速率。
图5表示处理压力变化时的电子密度的变化，可以确认如本发明那样，具有等离子体缓冲板的装置在所有的压力值下，与现有技术相比电子密度低。因此，根据本发明，可以确认抑制了对氮化膜的损害。
图6是表示处理压力变化时的电子温度的变化，可以确认如本发明那样，具有等离子体缓冲板的装置在所有压力值下，与现有技术相比电子温度低。因此，根据本发明，与现有技术相比可以抑制因充电而产生的对基板的损害。
在所述的实施例中使用的等离子体缓冲板20虽然使用开口部20a的大小完全相同的板，但是如图7所示，也可设定为由直径D3所示的圆形的中央部区域的开口部20b的大小比由直径D2所示的其外侧区域的开口部20b小。例如，在开口部20a的直径为10mm的情况下，中央部的开口部20b的直径比其小，可设定为例如9.5mm。
这样，通过使中央部的开口部20b的大小比位于其外侧的区域的开口部20a小，可以减小通过该中央部的氮自由基的量，由此，可以抑制基板中央部的氮化。因此，在有具有例如中央部的膜厚增大的倾向的装置特性、处理特性的情况下，通过使用图7所示的中央部的开口部20b的直径小的等离子体缓冲板20，抑制了中央部的膜厚的生长，结果，作为基板整体进行了均匀的氮化处理，可以实现均匀的膜厚。
相反，若中央部的开口部20b的大小比位于其外侧的开口部20a大，则通过该中央部的氮自由基量比其他增加，而可以促进基板中央部的氮化。因此，在有具有例如中央部的膜厚比其他小的倾向的装置特性、处理特性的情况下，这样，通过使用中央部的开口部20b的大小比位于其外侧的区域的开口部20a大的等离子体缓冲板20，可以实现均匀的膜厚。
另外，通过变化等离子体缓冲板20本身的厚度，可以进行氮化率的控制。即，若增大等离子体缓冲板20的厚度，则可以更加抑制氮化率。
进一步，所述实施方式的等离子体处理装置虽然作为进行氮化处理的装置构成，但是装置结构本身可以原样作为氧化处理基板的装置使用。
与已经说明的氮化处理的情况相同，通过采用等离子体缓冲板，可以减少离子能量和离子密度，可以缓和对硅氧化膜的损害。
产业上的可用性
本发明对半导体设备的制造工序中的氮化膜、氧化膜的形成非常有效。

Claims (10)

1、一种等离子体处理装置，对配置在处理容器内的基板，使用等离子体进行氮化处理、氧化处理，其特征在于：
在等离子体产生部和所述基板之间配置具有开口部的隔板，
所述隔板的位置位于距所述基板的表面20～40mm的上方。
2、根据权利要求1所述的等离子体处理装置，其特征在于：
所述隔板的各开口部的直径完全相同。
3、根据权利要求1所述的等离子体处理装置，其特征在于：
所述隔板的中央部的开口部的直径比位于该中央部的外侧的开口部的直径小。
4、根据权利要求1所述的等离子体处理装置，其特征在于：
所述隔板的中央部的开口部的直径比位于该中央部的外侧的开口部的直径大。
5、根据权利要求1～4之一所述的等离子体处理装置，其特征在于：
所述隔板具有在对应于所述基板的形状的区域内配置的多个开口部；
各开口部的开口面积是13mm2～450mm2。
6、根据权利要求1～4之一所述的等离子体处理装置，其特征在于：
所述隔板的厚度是3mm～7mm。
7、一种等离子体处理方法，对配置在处理容器内的基板，隔着设置在距所述基板的表面20～40mm的上方的具有开口部的隔板，使用等离子体进行氮化处理或者氧化处理，其特征在于：
将所述基板表面的所述等离子体的电子密度控制为1e+7(个·cm-3)～1e+9(个·cm-3)。
8、一种等离子体处理方法，对配置在处理容器内的基板，隔着设置在距所述基板的表面20～40mm的上方的具有开口部的隔板，使用等离子体进行氮化处理或者氧化处理，其特征在于：
将所述基板表面的气体流速控制为1e-2(m·sec-1)～1e+1(m·sec-1)。
9、一种等离子体处理装置，对配置在处理容器内的基板，使用等离子体进行氮化处理或者氧化处理，其特征在于：
在等离子体产生部和所述基板之间配置了具有开口部的隔板，
所述隔板由石英、氧化铝或者硅形成，
所述隔板的位置位于距所述基板的表面20～40mm的上方。
10、一种等离子体处理装置，对配置在处理容器内的基板，使用等离子体进行氮化处理或者氧化处理，其特征在于，该装置包括：
在等离子体产生部和所述基板之间配置的、具有开口部的隔板；和
形成多个孔作为天线发挥作用的槽板，
所述等离子体通过微波的供给而生成，
所述隔板的位置位于距所述基板的表面20～40mm的上方。
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JP4673063B2 (ja) 2011-04-20
KR100883697B1 (ko) 2009-02-13
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KR100900589B1 (ko) 2009-06-02
WO2004047157A1 (ja) 2004-06-03
TWI252517B (en) 2006-04-01
CN1714430A (zh) 2005-12-28
KR100810794B1 (ko) 2008-03-07
US20050205013A1 (en) 2005-09-22
CN101414560A (zh) 2009-04-22
JPWO2004047157A1 (ja) 2006-04-13

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