Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
  • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
  • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Thyristors (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=5832681

Family Applications (1)

Country Status (8)

Families Citing this family (5)

• 1972
  • 1972-01-11 DE DE19722201041 patent/DE2201041C3/de not_active Expired
  • 1972-10-03 CH CH1440672A patent/CH541870A/de not_active IP Right Cessation
  • 1972-11-23 GB GB5413272A patent/GB1377420A/en not_active Expired
  • 1972-12-18 FR FR7245020A patent/FR2167537B1/fr not_active Expired
  • 1972-12-20 IT IT3323572A patent/IT972621B/it active
  • 1972-12-21 NL NL7217455A patent/NL7217455A/xx unknown
• 1973
  • 1973-01-11 JP JP562673A patent/JPS5325479B2/ja not_active Expired
  • 1973-01-11 SE SE7300366A patent/SE390084B/xx unknown
• 1977
  • 1977-12-09 JP JP14867277A patent/JPS5386182A/ja active Granted

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