GB1377420A - Thyristors - Google Patents

Thyristors

Info

Publication number
GB1377420A
GB1377420A GB5413272A GB5413272A GB1377420A GB 1377420 A GB1377420 A GB 1377420A GB 5413272 A GB5413272 A GB 5413272A GB 5413272 A GB5413272 A GB 5413272A GB 1377420 A GB1377420 A GB 1377420A
Authority
GB
United Kingdom
Prior art keywords
region
auxiliary emitter
control
electrode
apertures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5413272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1377420A publication Critical patent/GB1377420A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

1377420 Semi-conductor devices SIEMENS AG 23 Nov 1972 [11 Jan 1972] 54132/72 Heading H1K In a thyristor provided, between the main emitter region 1 and the control electrode 10, with an auxiliary emitter region 7 shorted to the control region 2, and having in the second base region 3 a low resistivity zone 14 located below the auxiliary emitter region 7, each point on the surface of the auxiliary emitter region 7 is located within at most 4 mm. of the nearest point at which the auxiliary emitter electrode 8 contacts the control region 2. This ensures that the thyristor always fires first via the auxiliary emitter, and renders the device relatively insensitive to steep-gradient voltages across the main electrodes. In the device shown both the main and auxiliary emitter regions 1, 7 include apertures 6, 9 through which the control region 2 extends to contact the respective emitter electrode 5, 8, and the maximum spacing between the apertures 9 through the region 7 is 1-4 mm. Alternatively the apertures 9 may be omitted, the auxiliary emitter electrode 8 then only contacting the control region 2 around the outer periphery of the annular region 7. In this case the maximum allowable width of the region 7 is 1-4 mm.
GB5413272A 1972-01-11 1972-11-23 Thyristors Expired GB1377420A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2201041A DE2201041C3 (en) 1972-01-11 1972-01-11 Thyristor

Publications (1)

Publication Number Publication Date
GB1377420A true GB1377420A (en) 1974-12-18

Family

ID=5832681

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5413272A Expired GB1377420A (en) 1972-01-11 1972-11-23 Thyristors

Country Status (8)

Country Link
JP (2) JPS5325479B2 (en)
CH (1) CH541870A (en)
DE (1) DE2201041C3 (en)
FR (1) FR2167537B1 (en)
GB (1) GB1377420A (en)
IT (1) IT972621B (en)
NL (1) NL7217455A (en)
SE (1) SE390084B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
DE2843960A1 (en) * 1978-10-09 1980-04-10 Licentia Gmbh STOEROTENTIAL COMPENSATED THYRISTOR WITH AT LEAST FOUR ZONES OF DIFFERENT CONDUCTIVITY TYPES
DE2945347A1 (en) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH AUXILIARY ELECTRODE AND METHOD FOR ITS OPERATION
DE2945391A1 (en) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Gate turn-off type thyristor - has base inlaid emitter zones for shorting base to emitters using FET gate drive
DE3118317A1 (en) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH AUXILIARY ELECTRODE AND SHORT TERMINAL AREAS AND METHOD FOR ITS OPERATION

Also Published As

Publication number Publication date
NL7217455A (en) 1973-07-13
CH541870A (en) 1973-09-15
JPS5325479B2 (en) 1978-07-27
FR2167537B1 (en) 1978-01-13
JPS4881488A (en) 1973-10-31
DE2201041A1 (en) 1973-07-19
FR2167537A1 (en) 1973-08-24
IT972621B (en) 1974-05-31
DE2201041B2 (en) 1979-11-29
JPS5347673B2 (en) 1978-12-22
JPS5386182A (en) 1978-07-29
SE390084B (en) 1976-11-29
DE2201041C3 (en) 1980-08-07
SE7300366L (en) 1973-07-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee