SE389226B - Tyristor - Google Patents

Tyristor

Info

Publication number
SE389226B
SE389226B SE7313032A SE7313032A SE389226B SE 389226 B SE389226 B SE 389226B SE 7313032 A SE7313032 A SE 7313032A SE 7313032 A SE7313032 A SE 7313032A SE 389226 B SE389226 B SE 389226B
Authority
SE
Sweden
Prior art keywords
thyristor
Prior art date
Application number
SE7313032A
Other languages
English (en)
Inventor
A Porst
P Voss
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722246979 external-priority patent/DE2246979C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE389226B publication Critical patent/SE389226B/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308Gate electrodes for thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
SE7313032A 1972-09-25 1973-09-25 Tyristor SE389226B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722246979 DE2246979C3 (de) 1972-09-25 Thyristor

Publications (1)

Publication Number Publication Date
SE389226B true SE389226B (sv) 1976-10-25

Family

ID=5857313

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7313032A SE389226B (sv) 1972-09-25 1973-09-25 Tyristor

Country Status (6)

Country Link
JP (1) JPS4971877A (sv)
FR (1) FR2200627B1 (sv)
GB (1) GB1448150A (sv)
IT (1) IT993265B (sv)
NL (1) NL7310720A (sv)
SE (1) SE389226B (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584467B2 (ja) * 1975-05-23 1983-01-26 三菱電機株式会社 ハンドウタイソウチ
DE3917100A1 (de) * 1989-05-26 1990-11-29 Eupec Gmbh & Co Kg Thyristor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4118987Y1 (sv) * 1965-07-16 1966-09-05
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon

Also Published As

Publication number Publication date
FR2200627A1 (sv) 1974-04-19
FR2200627B1 (sv) 1978-08-04
DE2246979A1 (de) 1974-04-04
NL7310720A (sv) 1974-03-27
JPS4971877A (sv) 1974-07-11
GB1448150A (en) 1976-09-02
IT993265B (it) 1975-09-30
DE2246979B2 (de) 1977-04-14

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