JPS5347673B2 - - Google Patents

Info

Publication number
JPS5347673B2
JPS5347673B2 JP14867277A JP14867277A JPS5347673B2 JP S5347673 B2 JPS5347673 B2 JP S5347673B2 JP 14867277 A JP14867277 A JP 14867277A JP 14867277 A JP14867277 A JP 14867277A JP S5347673 B2 JPS5347673 B2 JP S5347673B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14867277A
Other languages
Japanese (ja)
Other versions
JPS5386182A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5386182A publication Critical patent/JPS5386182A/ja
Publication of JPS5347673B2 publication Critical patent/JPS5347673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP14867277A 1972-01-11 1977-12-09 Thyristor Granted JPS5386182A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2201041A DE2201041C3 (de) 1972-01-11 1972-01-11 Thyristor

Publications (2)

Publication Number Publication Date
JPS5386182A JPS5386182A (en) 1978-07-29
JPS5347673B2 true JPS5347673B2 (de) 1978-12-22

Family

ID=5832681

Family Applications (2)

Application Number Title Priority Date Filing Date
JP562673A Expired JPS5325479B2 (de) 1972-01-11 1973-01-11
JP14867277A Granted JPS5386182A (en) 1972-01-11 1977-12-09 Thyristor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP562673A Expired JPS5325479B2 (de) 1972-01-11 1973-01-11

Country Status (8)

Country Link
JP (2) JPS5325479B2 (de)
CH (1) CH541870A (de)
DE (1) DE2201041C3 (de)
FR (1) FR2167537B1 (de)
GB (1) GB1377420A (de)
IT (1) IT972621B (de)
NL (1) NL7217455A (de)
SE (1) SE390084B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss
DE3118317A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb

Also Published As

Publication number Publication date
GB1377420A (en) 1974-12-18
NL7217455A (de) 1973-07-13
CH541870A (de) 1973-09-15
JPS5325479B2 (de) 1978-07-27
FR2167537B1 (de) 1978-01-13
JPS4881488A (de) 1973-10-31
DE2201041A1 (de) 1973-07-19
FR2167537A1 (de) 1973-08-24
IT972621B (it) 1974-05-31
DE2201041B2 (de) 1979-11-29
JPS5386182A (en) 1978-07-29
SE390084B (sv) 1976-11-29
DE2201041C3 (de) 1980-08-07
SE7300366L (de) 1973-07-12

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