CA2297329A1 - Method for fabricating silicon oxynitride - Google Patents

Method for fabricating silicon oxynitride Download PDF

Info

Publication number
CA2297329A1
CA2297329A1 CA002297329A CA2297329A CA2297329A1 CA 2297329 A1 CA2297329 A1 CA 2297329A1 CA 002297329 A CA002297329 A CA 002297329A CA 2297329 A CA2297329 A CA 2297329A CA 2297329 A1 CA2297329 A1 CA 2297329A1
Authority
CA
Canada
Prior art keywords
reaction site
silicon oxynitride
gas stream
vaporous
octamethylcyclotetrasilazane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002297329A
Other languages
English (en)
French (fr)
Inventor
Carlton M. Truesdale
David F. Dawson-Elli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2297329A1 publication Critical patent/CA2297329A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/055—Peroxyhydrates; Peroxyacids or salts thereof
    • C01B15/14—Peroxyhydrates; Peroxyacids or salts thereof containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0821—Oxynitrides of metals, boron or silicon
    • C01B21/0823—Silicon oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
CA002297329A 1997-08-29 1998-08-05 Method for fabricating silicon oxynitride Abandoned CA2297329A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5724197P 1997-08-29 1997-08-29
US60/057,241 1997-08-29
PCT/US1998/016358 WO1999011573A1 (en) 1997-08-29 1998-08-05 Method for fabricating silicon oxynitride

Publications (1)

Publication Number Publication Date
CA2297329A1 true CA2297329A1 (en) 1999-03-11

Family

ID=22009383

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002297329A Abandoned CA2297329A1 (en) 1997-08-29 1998-08-05 Method for fabricating silicon oxynitride

Country Status (9)

Country Link
EP (1) EP1025041A1 (ja)
JP (1) JP2001514151A (ja)
KR (1) KR20010023452A (ja)
CN (1) CN1268099A (ja)
BR (1) BR9811384A (ja)
CA (1) CA2297329A1 (ja)
ID (1) ID24748A (ja)
TW (1) TW509660B (ja)
WO (1) WO1999011573A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1130633A1 (en) * 2000-02-29 2001-09-05 STMicroelectronics S.r.l. A method of depositing silicon oxynitride polimer layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788309A (en) * 1985-04-26 1988-11-29 Sri International Method of forming compounds having Si-N groups and resulting products
US5166104A (en) * 1986-02-12 1992-11-24 Toa Nenryo Kogyo Kabushiki Kaisha Polysiloxazanes, silicon oxynitride fibers and processes for producing same

Also Published As

Publication number Publication date
BR9811384A (pt) 2000-08-29
EP1025041A1 (en) 2000-08-09
CN1268099A (zh) 2000-09-27
WO1999011573A1 (en) 1999-03-11
TW509660B (en) 2002-11-11
ID24748A (id) 2000-08-03
AU8694298A (en) 1999-03-22
AU731687B2 (en) 2001-04-05
JP2001514151A (ja) 2001-09-11
KR20010023452A (ko) 2001-03-26

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Legal Events

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