TW509660B - Method for fabricating silicon oxynitride - Google Patents

Method for fabricating silicon oxynitride Download PDF

Info

Publication number
TW509660B
TW509660B TW087114318A TW87114318A TW509660B TW 509660 B TW509660 B TW 509660B TW 087114318 A TW087114318 A TW 087114318A TW 87114318 A TW87114318 A TW 87114318A TW 509660 B TW509660 B TW 509660B
Authority
TW
Taiwan
Prior art keywords
item
octamethylcyclotetrasilazane
gaseous
patent application
reaction site
Prior art date
Application number
TW087114318A
Other languages
English (en)
Chinese (zh)
Inventor
David Francis Dawson-Elli
Carlton Maurice Truesdale
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Application granted granted Critical
Publication of TW509660B publication Critical patent/TW509660B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/055—Peroxyhydrates; Peroxyacids or salts thereof
    • C01B15/14—Peroxyhydrates; Peroxyacids or salts thereof containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0821—Oxynitrides of metals, boron or silicon
    • C01B21/0823—Silicon oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
TW087114318A 1997-08-29 1998-08-27 Method for fabricating silicon oxynitride TW509660B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5724197P 1997-08-29 1997-08-29

Publications (1)

Publication Number Publication Date
TW509660B true TW509660B (en) 2002-11-11

Family

ID=22009383

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087114318A TW509660B (en) 1997-08-29 1998-08-27 Method for fabricating silicon oxynitride

Country Status (9)

Country Link
EP (1) EP1025041A1 (ja)
JP (1) JP2001514151A (ja)
KR (1) KR20010023452A (ja)
CN (1) CN1268099A (ja)
BR (1) BR9811384A (ja)
CA (1) CA2297329A1 (ja)
ID (1) ID24748A (ja)
TW (1) TW509660B (ja)
WO (1) WO1999011573A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1130633A1 (en) * 2000-02-29 2001-09-05 STMicroelectronics S.r.l. A method of depositing silicon oxynitride polimer layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788309A (en) * 1985-04-26 1988-11-29 Sri International Method of forming compounds having Si-N groups and resulting products
US5166104A (en) * 1986-02-12 1992-11-24 Toa Nenryo Kogyo Kabushiki Kaisha Polysiloxazanes, silicon oxynitride fibers and processes for producing same

Also Published As

Publication number Publication date
BR9811384A (pt) 2000-08-29
EP1025041A1 (en) 2000-08-09
CN1268099A (zh) 2000-09-27
WO1999011573A1 (en) 1999-03-11
ID24748A (id) 2000-08-03
CA2297329A1 (en) 1999-03-11
AU8694298A (en) 1999-03-22
AU731687B2 (en) 2001-04-05
JP2001514151A (ja) 2001-09-11
KR20010023452A (ko) 2001-03-26

Similar Documents

Publication Publication Date Title
US6487879B1 (en) Method of making titania-doped fused silica
US5154744A (en) Method of making titania-doped fused silica
US5152819A (en) Method of making fused silica
EP0471139B1 (en) Method of making high purity, non-porous fused silica bodies
JP4887271B2 (ja) 低ストリエーション極紫外光光学素子
US20160137545A1 (en) High hydroxyl tio2-sio2 glass
JP2012046406A (ja) 低膨張性シリカ・チタニアガラスにおける膨張性の改善
CN114249524A (zh) 低羟基高纯石英玻璃及其制备方法
CA2292985C (en) Process for producing silica by decomposition of an organosilane
US6326325B1 (en) Method for fabricating silicon oxynitride
JP2006516525A (ja) 合成シリカガラスの製造方法
TW509660B (en) Method for fabricating silicon oxynitride
JPH11116247A (ja) 合成石英ガラス製造方法
JPH01138145A (ja) 合成石英ガラス部材の製造方法
Lee et al. The dependence of N2 carrier gas flow rate on deposition rate and density changes of porous silica preform synthesized by eco‐friendly octamethylcyclotetrasiloxane
AU731687C (en) Method for fabricating silicon oxynitride
JP2566349B2 (ja) 合成石英ガラス部材の製造方法
KR20130099427A (ko) 포토마스크용 합성석영유리 제조에 사용되는 산수소버너
JPH0692648A (ja) 合成石英ガラス部材の製造方法
US20210214266A1 (en) Organic germania and silica sources for making optical fiber preforms
JPH05279049A (ja) 合成石英ガラスの製造方法
JP5310343B2 (ja) 合成石英ガラスの製造方法
JP2005154236A (ja) ドープ合成石英ガラスの製造方法
JPH0459253B2 (ja)
JPH0710571A (ja) 合成石英ガラス部材の製造方法