CA2067048A1 - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- CA2067048A1 CA2067048A1 CA002067048A CA2067048A CA2067048A1 CA 2067048 A1 CA2067048 A1 CA 2067048A1 CA 002067048 A CA002067048 A CA 002067048A CA 2067048 A CA2067048 A CA 2067048A CA 2067048 A1 CA2067048 A1 CA 2067048A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- layers
- composition ratio
- transistor according
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005669 field effect Effects 0.000 title claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 5
- 239000002019 doping agent Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 241000905957 Channa melasoma Species 0.000 description 1
- 241000193803 Therea Species 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP96858/1991 | 1991-04-26 | ||
| JP96857/1991 | 1991-04-26 | ||
| JP3096857A JPH04326734A (ja) | 1991-04-26 | 1991-04-26 | 電界効果トランジスタ |
| JP3096858A JPH04326735A (ja) | 1991-04-26 | 1991-04-26 | 電界効果トランジスタ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2067048A1 true CA2067048A1 (en) | 1992-10-27 |
Family
ID=26438021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002067048A Abandoned CA2067048A1 (en) | 1991-04-26 | 1992-04-24 | Field effect transistor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5331410A (ko) |
| EP (1) | EP0510705A2 (ko) |
| KR (1) | KR950003946B1 (ko) |
| CA (1) | CA2067048A1 (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3226069B2 (ja) * | 1993-10-04 | 2001-11-05 | キヤノン株式会社 | 半導体積層構造および半導体光素子 |
| JP2674539B2 (ja) * | 1994-12-21 | 1997-11-12 | 日本電気株式会社 | 電界効果トランジスタ |
| US5856684A (en) * | 1996-09-12 | 1999-01-05 | Motorola, Inc. | High power HFET with improved channel interfaces |
| JP3601649B2 (ja) * | 1996-12-25 | 2004-12-15 | 株式会社村田製作所 | 電界効果トランジスタ |
| US5701020A (en) * | 1997-01-31 | 1997-12-23 | National Science Council | Pseudomorphic step-doped-channel field-effect transistor |
| JP3751398B2 (ja) * | 1997-03-13 | 2006-03-01 | 富士通株式会社 | 化合物半導体装置 |
| TW319913B (en) * | 1997-05-06 | 1997-11-11 | Nat Science Council | InGaP/GaAs modulation compositioned channel Exhibit high current |
| JP3159198B2 (ja) * | 1999-02-19 | 2001-04-23 | 住友電気工業株式会社 | 電界効果トランジスタ |
| JP3421306B2 (ja) * | 2000-07-19 | 2003-06-30 | 富士通カンタムデバイス株式会社 | 化合物半導体装置 |
| JP4586547B2 (ja) * | 2005-01-24 | 2010-11-24 | 住友電気工業株式会社 | 接合型電界効果トランジスタ |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163237A (en) * | 1978-04-24 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | High mobility multilayered heterojunction devices employing modulated doping |
| US4691215A (en) * | 1985-01-09 | 1987-09-01 | American Telephone And Telegraph Company | Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter |
| JP2645993B2 (ja) * | 1986-06-12 | 1997-08-25 | 富士通株式会社 | 電界効果型半導体装置及びその製造方法 |
| US4994866A (en) * | 1988-01-07 | 1991-02-19 | Fujitsu Limited | Complementary semiconductor device |
| US5091759A (en) * | 1989-10-30 | 1992-02-25 | Texas Instruments Incorporated | Heterostructure field effect transistor |
| JP2501627B2 (ja) * | 1988-09-27 | 1996-05-29 | 沖電気工業株式会社 | 化合物半導体の構造体及びその形成方法 |
| JPH02192739A (ja) * | 1989-01-20 | 1990-07-30 | Sanyo Electric Co Ltd | ヘテロ接合電界効果トランジスタ |
| US5060030A (en) * | 1990-07-18 | 1991-10-22 | Raytheon Company | Pseudomorphic HEMT having strained compensation layer |
| US5206527A (en) * | 1990-11-09 | 1993-04-27 | Sumitomo Electric Industries, Ltd. | Field effect transistor |
-
1992
- 1992-04-21 US US07/871,706 patent/US5331410A/en not_active Expired - Fee Related
- 1992-04-24 CA CA002067048A patent/CA2067048A1/en not_active Abandoned
- 1992-04-25 KR KR1019920007044A patent/KR950003946B1/ko not_active IP Right Cessation
- 1992-04-26 EP EP92107120A patent/EP0510705A2/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0510705A3 (ko) | 1995-05-24 |
| EP0510705A2 (en) | 1992-10-28 |
| KR950003946B1 (ko) | 1995-04-21 |
| US5331410A (en) | 1994-07-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Dead |